MX2012002156A - Oxido conductor transparente impurificado. - Google Patents

Oxido conductor transparente impurificado.

Info

Publication number
MX2012002156A
MX2012002156A MX2012002156A MX2012002156A MX2012002156A MX 2012002156 A MX2012002156 A MX 2012002156A MX 2012002156 A MX2012002156 A MX 2012002156A MX 2012002156 A MX2012002156 A MX 2012002156A MX 2012002156 A MX2012002156 A MX 2012002156A
Authority
MX
Mexico
Prior art keywords
transparent conductive
conductive oxide
doped transparent
doped
oxide layer
Prior art date
Application number
MX2012002156A
Other languages
English (en)
Inventor
Boil Pashmakov
Dale Roberts
Scott Mills
Zhibo Zhao
Douglas Dauson
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of MX2012002156A publication Critical patent/MX2012002156A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)

Abstract

La presente invención se refiere a una célula solar con una capa de óxido conductora transparente impurificada. La capa de óxido conductora transparente impurificada puede mejorar la eficiencia de las células solares a base de CdTe o de otras clases.
MX2012002156A 2009-08-24 2010-08-20 Oxido conductor transparente impurificado. MX2012002156A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23643109P 2009-08-24 2009-08-24
PCT/US2010/046177 WO2011025715A1 (en) 2009-08-24 2010-08-20 Doped transparent conductive oxide

Publications (1)

Publication Number Publication Date
MX2012002156A true MX2012002156A (es) 2012-04-02

Family

ID=43604318

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012002156A MX2012002156A (es) 2009-08-24 2010-08-20 Oxido conductor transparente impurificado.

Country Status (8)

Country Link
US (1) US20110041917A1 (es)
EP (1) EP2470694A4 (es)
CN (1) CN102482796A (es)
AU (1) AU2010286811A1 (es)
MX (1) MX2012002156A (es)
TW (1) TW201133873A (es)
WO (1) WO2011025715A1 (es)
ZA (1) ZA201201326B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011084775A1 (en) * 2009-12-21 2011-07-14 First Solar, Inc. Photovoltaic device with buffer layer
DE102010038796B4 (de) * 2010-08-02 2014-02-20 Von Ardenne Anlagentechnik Gmbh Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung
US20120067414A1 (en) * 2010-09-22 2012-03-22 Chungho Lee CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
KR101154654B1 (ko) * 2010-10-05 2012-06-11 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
KR101338751B1 (ko) * 2011-12-19 2013-12-06 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN104737268A (zh) 2012-01-12 2015-06-24 第一太阳能有限公司 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统
WO2013119550A1 (en) 2012-02-10 2013-08-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
WO2014077895A1 (en) 2012-11-19 2014-05-22 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
CN103107244B (zh) * 2013-02-17 2015-12-02 淮阴师范学院 一种氧化镉基透光波段可调的导电薄膜制备方法
US9927667B2 (en) 2014-08-11 2018-03-27 Sci Engineered Materials, Inc. Display having a transparent conductive oxide layer comprising metal doped zinc oxide applied by sputtering
US9818888B2 (en) 2015-03-12 2017-11-14 Vitro, S.A.B. De C.V. Article with buffer layer and method of making the same
CN107564977A (zh) * 2017-08-31 2018-01-09 成都中建材光电材料有限公司 一种窗口层、CdTe薄膜太阳能电池组件及其制备方法
CN110491998A (zh) * 2019-08-23 2019-11-22 通威太阳能（成都）有限公司 一种平面无掺杂异质结-钙钛矿叠层电池及其制备方法
JP2023542346A (ja) * 2020-09-21 2023-10-06 ファースト・ソーラー・インコーポレーテッド 透明導電層、および該透明導電層を備える光起電デバイス
CN113913764B (zh) * 2021-09-30 2023-05-16 浙江师范大学 一种高迁移率透明导电氧化物薄膜及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
CA2341629A1 (en) * 1998-08-26 2000-03-09 Hodaka Norimatsu Photovoltaic device
KR100798234B1 (ko) * 2000-04-06 2008-01-24 아크조 노벨 엔.브이. 광기전성박의 제조 방법
JP3904378B2 (ja) * 2000-08-02 2007-04-11 ローム株式会社 酸化亜鉛透明導電膜
US6743524B2 (en) * 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
CH697007A5 (fr) * 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
CA2586961A1 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in cigs
US7582161B2 (en) * 2006-04-07 2009-09-01 Micron Technology, Inc. Atomic layer deposited titanium-doped indium oxide films
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080128022A1 (en) * 2006-11-15 2008-06-05 First Solar, Inc. Photovoltaic device including a tin oxide protective layer
US8334452B2 (en) * 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like

Also Published As

Publication number Publication date
CN102482796A (zh) 2012-05-30
EP2470694A4 (en) 2013-10-30
AU2010286811A2 (en) 2012-04-26
ZA201201326B (en) 2012-10-31
TW201133873A (en) 2011-10-01
EP2470694A1 (en) 2012-07-04
US20110041917A1 (en) 2011-02-24
AU2010286811A1 (en) 2012-04-19
WO2011025715A1 (en) 2011-03-03

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