MX2009005459A - Dispositivo fotovoltaico que incluye apilamiento de metal. - Google Patents
Dispositivo fotovoltaico que incluye apilamiento de metal.Info
- Publication number
- MX2009005459A MX2009005459A MX2009005459A MX2009005459A MX2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A
- Authority
- MX
- Mexico
- Prior art keywords
- photovoltaic device
- device including
- metal stack
- stack
- metal
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Un dispositivo fotovoltaico puede incluir una capa de metal en contacto con una capa semiconductora.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86802306P | 2006-11-30 | 2006-11-30 | |
US11/939,878 US20080128020A1 (en) | 2006-11-30 | 2007-11-14 | Photovoltaic devices including a metal stack |
PCT/US2007/084828 WO2008067181A2 (en) | 2006-11-30 | 2007-11-15 | Photovoltaic device including a metal stack |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2009005459A true MX2009005459A (es) | 2009-06-01 |
Family
ID=39468615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2009005459A MX2009005459A (es) | 2006-11-30 | 2007-11-15 | Dispositivo fotovoltaico que incluye apilamiento de metal. |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080128020A1 (es) |
EP (1) | EP2089912A4 (es) |
MX (1) | MX2009005459A (es) |
WO (1) | WO2008067181A2 (es) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110041898A1 (en) * | 2009-08-19 | 2011-02-24 | Emcore Solar Power, Inc. | Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells |
US20100093127A1 (en) * | 2006-12-27 | 2010-04-15 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film |
US8975199B2 (en) | 2011-08-12 | 2015-03-10 | Corsam Technologies Llc | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
US8445394B2 (en) * | 2008-10-06 | 2013-05-21 | Corning Incorporated | Intermediate thermal expansion coefficient glass |
CN102257637A (zh) | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | 光伏器件 |
WO2010065246A1 (en) * | 2008-11-25 | 2010-06-10 | First Solar, Inc. | Photovoltaic devices including copper indium gallium selenide |
US20100126580A1 (en) * | 2008-11-26 | 2010-05-27 | Farrell James F | CdTe deposition process for solar cells |
US8222765B2 (en) * | 2009-02-13 | 2012-07-17 | First Solar, Inc. | Photovoltaic power plant output |
WO2010126699A2 (en) | 2009-04-29 | 2010-11-04 | Hunter Douglas Industries B.V. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
US9691921B2 (en) * | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
US9136422B1 (en) | 2012-01-19 | 2015-09-15 | Alta Devices, Inc. | Texturing a layer in an optoelectronic device for improved angle randomization of light |
DE102010028189B4 (de) * | 2010-04-26 | 2018-09-27 | Solarworld Industries Gmbh | Solarzelle |
US9461186B2 (en) * | 2010-07-15 | 2016-10-04 | First Solar, Inc. | Back contact for a photovoltaic module |
WO2012047592A2 (en) * | 2010-09-27 | 2012-04-12 | Astrowatt, Inc. | Electronic device including a semiconductor layer and a metal-containing layer, and a process of forming the same |
WO2012065076A1 (en) * | 2010-11-14 | 2012-05-18 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Plasmonic structures, methods for making plasmonic structures, and devices including them |
EP2721647A2 (en) * | 2011-06-15 | 2014-04-23 | 3M Innovative Properties Company | Solar cell with improved conversion efficiency |
US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
US11257978B2 (en) * | 2019-03-29 | 2022-02-22 | Utica Leaseco, Llc | Front metal contact stack |
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US4297717A (en) * | 1965-09-28 | 1981-10-27 | Li Chou H | Semiconductor device |
US4035197A (en) * | 1976-03-30 | 1977-07-12 | Eastman Kodak Company | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture |
US4172925A (en) * | 1978-02-22 | 1979-10-30 | Refac Electronics Corporation | Photoelectrochemical cell |
US4207119A (en) * | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
DE3242791A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen |
JPS59172274A (ja) * | 1983-03-18 | 1984-09-28 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
US5103268A (en) * | 1989-03-30 | 1992-04-07 | Siemens Solar Industries, L.P. | Semiconductor device with interfacial electrode layer |
JPH02268469A (ja) * | 1989-03-30 | 1990-11-02 | Atlantic Richfield Co <Arco> | 薄膜半導体デバイスとそれを製造する方法 |
JPH04209576A (ja) * | 1990-12-07 | 1992-07-30 | Kanegafuchi Chem Ind Co Ltd | 光電変換素子 |
US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
DE4333407C1 (de) * | 1993-09-30 | 1994-11-17 | Siemens Ag | Solarzelle mit einer Chalkopyritabsorberschicht |
AU2001247790A1 (en) * | 2000-03-24 | 2001-10-08 | Cymbet Corporation | Battery-operated wireless-communication apparatus and method |
AU2002259152A1 (en) * | 2001-05-08 | 2002-11-18 | Bp Corporation North America Inc. | Improved photovoltaic device |
WO2003053851A2 (en) * | 2001-07-20 | 2003-07-03 | President And Fellows Of Harvard College | Transition metal oxide nanowires |
JP4240933B2 (ja) * | 2002-07-18 | 2009-03-18 | キヤノン株式会社 | 積層体形成方法 |
US6794976B2 (en) * | 2002-12-24 | 2004-09-21 | Illinois Tool Works Inc. | HF transformer assembly having a higher leakage inductance boost winding |
US7075103B2 (en) * | 2003-12-19 | 2006-07-11 | General Electric Company | Multilayer device and method of making |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
US20050257824A1 (en) | 2004-05-24 | 2005-11-24 | Maltby Michael G | Photovoltaic cell including capping layer |
US7087521B2 (en) * | 2004-11-19 | 2006-08-08 | Intel Corporation | Forming an intermediate layer in interconnect joints and structures formed thereby |
-
2007
- 2007-11-14 US US11/939,878 patent/US20080128020A1/en not_active Abandoned
- 2007-11-15 WO PCT/US2007/084828 patent/WO2008067181A2/en active Application Filing
- 2007-11-15 EP EP07864469A patent/EP2089912A4/en not_active Withdrawn
- 2007-11-15 MX MX2009005459A patent/MX2009005459A/es active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2008067181A2 (en) | 2008-06-05 |
EP2089912A4 (en) | 2011-04-27 |
US20080128020A1 (en) | 2008-06-05 |
EP2089912A2 (en) | 2009-08-19 |
WO2008067181A3 (en) | 2008-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
HH | Correction or change in general | ||
FG | Grant or registration |