PL2100335T3 - Przednia elektroda oparta na tlenku cynku, domieszkowana itrem, do wykorzystania w urządzeniu fotowoltaicznym lub podobnym - Google Patents

Przednia elektroda oparta na tlenku cynku, domieszkowana itrem, do wykorzystania w urządzeniu fotowoltaicznym lub podobnym

Info

Publication number
PL2100335T3
PL2100335T3 PL07862852T PL07862852T PL2100335T3 PL 2100335 T3 PL2100335 T3 PL 2100335T3 PL 07862852 T PL07862852 T PL 07862852T PL 07862852 T PL07862852 T PL 07862852T PL 2100335 T3 PL2100335 T3 PL 2100335T3
Authority
PL
Poland
Prior art keywords
yttrium
photovoltaic device
zinc oxide
front electrode
example embodiments
Prior art date
Application number
PL07862852T
Other languages
English (en)
Inventor
Alexey Krasnov
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of PL2100335T3 publication Critical patent/PL2100335T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
PL07862852T 2007-01-08 2007-12-13 Przednia elektroda oparta na tlenku cynku, domieszkowana itrem, do wykorzystania w urządzeniu fotowoltaicznym lub podobnym PL2100335T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/650,564 US8334452B2 (en) 2007-01-08 2007-01-08 Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
PCT/US2007/025484 WO2008085264A1 (en) 2007-01-08 2007-12-13 Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
EP07862852A EP2100335B1 (en) 2007-01-08 2007-12-13 Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like

Publications (1)

Publication Number Publication Date
PL2100335T3 true PL2100335T3 (pl) 2010-11-30

Family

ID=39276103

Family Applications (1)

Application Number Title Priority Date Filing Date
PL07862852T PL2100335T3 (pl) 2007-01-08 2007-12-13 Przednia elektroda oparta na tlenku cynku, domieszkowana itrem, do wykorzystania w urządzeniu fotowoltaicznym lub podobnym

Country Status (7)

Country Link
US (2) US8334452B2 (pl)
EP (1) EP2100335B1 (pl)
AT (1) ATE471573T1 (pl)
DE (1) DE602007007241D1 (pl)
ES (1) ES2347494T3 (pl)
PL (1) PL2100335T3 (pl)
WO (1) WO2008085264A1 (pl)

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US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
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US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
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US8334452B2 (en) 2012-12-18
US20130074922A1 (en) 2013-03-28
EP2100335B1 (en) 2010-06-16
DE602007007241D1 (de) 2010-07-29
ES2347494T3 (es) 2010-10-29
EP2100335A1 (en) 2009-09-16
US20080163929A1 (en) 2008-07-10
WO2008085264A1 (en) 2008-07-17
ATE471573T1 (de) 2010-07-15
US8936842B2 (en) 2015-01-20

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