TW200539351A - Compositions and methods for chemical mechanical polishing silica and silicon nitride - Google Patents
Compositions and methods for chemical mechanical polishing silica and silicon nitride Download PDFInfo
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- TW200539351A TW200539351A TW094105090A TW94105090A TW200539351A TW 200539351 A TW200539351 A TW 200539351A TW 094105090 A TW094105090 A TW 094105090A TW 94105090 A TW94105090 A TW 94105090A TW 200539351 A TW200539351 A TW 200539351A
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- 239000000203 mixture Substances 0.000 title claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000005498 polishing Methods 0.000 title claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 18
- 239000000126 substance Substances 0.000 title claims description 6
- 229920000642 polymer Polymers 0.000 claims abstract description 31
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 150000001767 cationic compounds Chemical class 0.000 claims abstract description 15
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 125000003118 aryl group Chemical group 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 125000001424 substituent group Chemical group 0.000 claims abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000011574 phosphorus Substances 0.000 claims abstract 2
- -1 alcohol amines Chemical class 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- XSXHWVKGUXMUQE-UHFFFAOYSA-N dioxoosmium Chemical group O=[Os]=O XSXHWVKGUXMUQE-UHFFFAOYSA-N 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- 150000004982 aromatic amines Chemical class 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000012776 electronic material Substances 0.000 claims description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003868 ammonium compounds Chemical class 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 125000000304 alkynyl group Chemical group 0.000 claims 1
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 9
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 8
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 3
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 3
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- MVLVMROFTAUDAG-UHFFFAOYSA-N ethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC MVLVMROFTAUDAG-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- KVGZZAHHUNAVKZ-UHFFFAOYSA-N 1,4-Dioxin Chemical compound O1C=COC=C1 KVGZZAHHUNAVKZ-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- MXRGSJAOLKBZLU-UHFFFAOYSA-N 3-ethenylazepan-2-one Chemical compound C=CC1CCCCNC1=O MXRGSJAOLKBZLU-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 1
- 125000002837 carbocyclic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- OVHKECRARPYFQS-UHFFFAOYSA-N cyclohex-2-ene-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC=C1 OVHKECRARPYFQS-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- DLAHAXOYRFRPFQ-UHFFFAOYSA-N dodecyl benzoate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC=CC=C1 DLAHAXOYRFRPFQ-UHFFFAOYSA-N 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical group 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
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- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
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- 230000005012 migration Effects 0.000 description 1
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- 125000002950 monocyclic group Chemical group 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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Description
200539351 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體晶圓材料之化學機械平坦化 (CMP)，且更特定言之係關於供在淺溝槽隔離（STI)製程中 自半導體晶圓拋光二氧化矽及氮化矽之CMP組合物及方 法。 【先前技術】 在Μ電子電路中器件尺寸的減少及整合密度的增加需要 相應縮減隔離結構之尺寸。雖然佔用最小量之基板表面， 但是該縮減在重複形成提供有效隔離之結構上造成額外費 用0
"^ M /TJ 々厂 7P 成隔離結構以電隔離在積體電路中形成之各種主動組件。 使用ST!技術優於習知L〇c〇s(石夕的局部氧化）技術的一主 要優勢是在亞《等級之整合下製造CM〇s(互補性金屬氧 化物半導體）K：器件的高度可量測性。另一優勢是該印技 術有助於防止所謂的鳥嘴侵帅ird,s W e贿㈣h_) 之出現，其係形成隔離結構iL〇c〇s技術之特性。 4 7ΤΙ技術中，第—步料由各向異㈣刻在基 預定位置上形成複數個溝槽。其次，將二氧化石夕沉 ^母—該等溝槽中。接著該二氧切藉由⑽拋光，向
Sr終止，)以形成咖結構。為達成有效之拋 、水义麟供涉及二氧切相對於氮 之移除率的高選擇性。 I、擇『） 99576.doc 200539351
Kido等人在美國專利申請公開案第2〇〇2/〇〇4535〇號中揭 示一已知供拋光半導體器件之研磨劑組合物，其包含氧化 鈽及水溶性有機化合物。儘管未詳細說明，但該組合物視 情況可含有黏度調節劑、緩衝劑、界面活性劑及螯合劑。 雖然Kido之組合物提供適當的選擇性，但是在微電子電路 中不斷增加整合密度仍需要改良的組合物及方法。
因此’需要供淺溝槽隔離製程化學機械拋光二氧化矽及 氮化石夕之具有改良選擇性的組合物及方法。 【發明内容】 在第一態樣中，本發明提供一種用於在半導體晶圓上拋 光二氧化石夕及氮化矽之水性組合物，其包含〇〇1重量％至5 重量％之兩性離子化合物、〇·〇 1重量❹/()至5重量％之羧酸聚 合物、0.02重量％至6重量％之研磨劑、〇重量％至5重量％ 之陽離子化合物及平衡水，其中該兩性離子化合物具有以 下結構：
Θ丨1 Χ2—^ί- χ3 其中：η為整數；γ包含氫或烷基；z包含羧基、硫酸根 或氧；Μ包含氮原子、構原子或硫原子，且、&及&獨 立地包含選自包含氫、烧基及芳基之群的取代基。 在第二態樣中，本發明提供一種用於在半導體晶圓上拋 光二氧化矽及氮化矽之水性組合物，其包含〇〇1重量％至5 重量％之醋酸N，N，N_S甲銨、0.01重量％至5重量％之聚丙 99576.doc 200539351 稀酸聚合物、〇.02重量％至6重量％之二氧化鈽、〇重量％至 5重量％之陽離子化合物及平衡水，其中該水性組合物阳 值為4至9。 在第三態樣中，本發明提供一種在半導體晶圓上供拋光
二氧切及氮切之㈣，财法包含：錢：氧化石夕與 氮化矽在該晶圓上與一拋光組合物接觸，該拋光組合物包 含0.01重量％至5重量％之兩性離子化合物、GG1重量％至5 f量％之㈣聚合物、0.02重量％至6重量％之研磨劑、❹重 量％至5重量％之陽離子化合物及平衡水；以—抛光墊抛光二 氧化石夕及氮切’·且其中該兩性離子化合物具有如下結構：
•CH-一Z
Θ 其中· η為整數；γ包含氣或烧基；z包含㈣、硫酸根 或氧，M包含氮原子、磷原子或硫原子，且X!、X2及χ3獨 立地包含選自包含氫、烷基及芳基之群的取代基。 【實施方式】 立該組合物及方法提供相對於氮化矽移除二氧化矽之出乎 意料的選擇性。對淺溝槽隔離製程而言，該組合物有利地 依賴於螯合劑或選擇性增強劑以相對於氮化矽選擇性地拋 氧化夕°羊&之，该組合物包含一兩性離子化合物以 在應用pH值下相對於氮化石夕選擇性地拋光二氧化石夕。 如本文界定之術語"烷基"（或烷基_或alk_)係指一較佳含 有1至20個碳原子的經取代或未經取代之直鏈、支鏈或環 99576.doc 200539351 烴鏈。舉例而言，烷基包括甲基、乙基、丙基、異丙基、 %丙基、丁基、異丁基、第三丁基、第二丁基、環丁基、 戊基、環戊基、己基及環己基。 遠術語”芳基”係指一較佳含有6至2〇個碳原子之任何經 取代或未經取代之芳族碳環基。芳基可為單環或多環。舉 例而言，芳基包括苯基、萘基、聯苯基、苯曱基、甲苯 基、二甲苯基、苯乙基、苯曱酸酯基、苯甲酸烷酯基、笨 胺基及N-烷基苯胺基。 術^兩性離子化合物”意謂一含有相同比例之藉由物理 橋（例如CH2基）連接之陽離子及陰離子取代基的化合物， 因此孩化合物總體而言為基本中性。本發明之兩性離子化 合物包括如下結構： ,Υ ㊉. x3
θ -Z Χι -CH- 其中η為整數；γ包含氳或烷基；2包含羧基、硫酸根或 氧，Μ包含氮原子、磷原子或硫原子；且又1、&及&獨立 地包含選自包含氫、烷基及芳基之群的取代基。 舉例而言，較佳的兩性離子化合物包括甜菜鹼。本發明 之較佳甜菜鹼為醋酸Ν，Ν，Ν-三曱銨，其由以下結構表示： © 9¾ 〇 CH3-N——(?、 Αη3 0 Θ 該組合物有利地含有0.01重量％至5重量％之兩性離子化 合物’以相對於氮化矽選擇地移除二氧化矽。有利地，該 99576.doc 200539351 組合物含有0.05重量％至1.5重量％之兩性離子化合物。本 . 發明之兩性離子化合物可有利地促進平坦化且可抑制氮化 / 物移除。 除兩性離子化合物之外，組合物有利地含有〇·〇丨重量〇/ 至5重量❹/〇之羧酸聚合物。較佳地，組合物含有〇 〇5重量％ 至1 ·5重量％之羧酸聚合物。同樣，聚合物數目平均分子量 較佳為4,000至1，5〇〇,〇〇〇。另外，可使用較高與較低數目 平均分子量之羧酸聚合物的掺合物。該等羧酸聚合物一般 處於溶液中但亦可處於水性分散液中。羧酸聚合物可有利 地充當研磨顆粒之分散劑（以下討論）。上述聚合物之數目 平均分子量藉由GPC(凝膠滲透層析法）來測定。 竣酸聚合物係自不飽和單羧酸及不飽和二羧酸形成。典 型的不飽和單羧酸單體含有3至6個碳原子，且包括丙稀 酸、寡聚丙烯酸、甲基丙烯酸、丁烯酸及乙烯基醋酸。典 型的不飽和二羧酸含有4至8個碳原子，且包括其酸酐，例 _ 如順丁烯二酸、順丁烯二酸酐 '反丁烯二酸、戊二酸、衣 康酸、衣康酸酐及環己烯二羧酸。另外，亦可使用上述酸 的水溶性鹽。 尤其有效的酸係數目平均分子量為約1，〇〇〇至〗，％〇,〇〇〇 較佳為3,000至250,000且更佳為2〇,〇〇〇至2〇〇,〇〇〇之，，聚（甲 基）丙烯酸”。如本文所用之術語，，聚（甲基）丙烯酸，，定義為 丙烯酸聚合物、甲基丙烯酸聚合物或丙烯酸與甲基丙烯酸 之共聚物。尤其較佳的係不同數目平均分子量之 丙烯酸之摻合物。在該等聚（甲基）丙烯酸之摻合物或混合 99576.doc -10- 200539351 物中’將較低數目平均分子量之聚（甲基）丙烯酸（具有 1，000至100,000且較佳4,000至40,000之數目平均分子量）與 較间數目平均分子量之聚（甲基）丙稀酸（具有15〇,〇⑻至 1，500,00〇較佳2〇〇,〇〇〇至300,000之數目平均分子量）組合使
用。通常，該較低數目平均分子量之聚（甲基）丙烯酸與該 較高數目平均分子量之聚（甲基）丙烯酸之重量百分比為約 10:1至1··10，較佳為5:1至1:5，且更佳為3:1至2:3。較佳的 摻合物包含重量比為2:1之具有約20,000數目平均分子量的 聚（甲基）丙烯酸與具有約2〇〇,〇〇〇數目平均分子量的聚（甲 基）丙稀酸。 另外，可使用含竣酸之共聚物與三聚物，其中該緩酸組 份包含5-75重量％之聚合物。典型的該等聚合物係（甲基） 丙烯酸與丙烯醯胺或甲基丙烯醯胺之聚合物、（甲基）丙稀 酸與苯乙烯及其它乙烯基芳族單體之聚合物、（甲基）丙稀 酸烷酯（丙烯酸或甲基丙烯酸的酯）與單羧酸或二羧酸（諸如 ^ 丙烯酸或曱基丙稀酸或衣康酸）之聚合物、具有諸如鹵基 (意即氣基、氟基、溴基）、硝基、氰基、烷氧基、鹵代烷 基、羧基、胺基、胺基烷基取代基之經取代乙烯基芳族單 體與不飽和單叛酸或二竣酸及（甲基）丙烯酸烷酯之聚合 物、含有氮環之單烯系不飽和單體（諸如乙烯基吡啶、烷 基乙稀基吼咬、乙稀基丁内酿胺、乙烯基己内醯胺）與^ 飽和單緩酸或二魏酸之聚合物、諸如丙烯、異丁烯之稀煙 或具有10至20個奴原子之長鏈燒基烯烴與不飽和單緩酸戍 二羧酸之聚合物、乙烯醇醋（諸如乙酸乙烯酷與硬脂酸乙 99576.doc -11- 200539351 烯酯)或乙烯基齒化物(諸如氟乙烯、氯乙烯、氟亞乙烯)或 乙稀基猜（諸如丙稀腈及甲基丙烯腈）與不飽和單叛酸或二 缓酉夂之聚口物、在燒基上具有卜24個碳原子之（甲基）丙稀 酸烧酿與不飽和單幾酸（諸如丙稀酸或甲基丙烯酸）之聚合 物-亥等1合物僅係在本發明之新賴搬光組合物中使用之 各種聚合物的少數實例。同樣，可使用可生物降解、可光 降解或可藉由其它方式降解的聚合物。該可生物降解組合 物的實例為含有聚（丙稀酸醋-共-2-氰基丙婦酸甲醋）巍段 之聚丙烯酸聚合物。 有利地，該拋光組合物含有〇2重量％至6重量％之研磨 劑以促進二氧化石夕之移&。在此範圍内，需I研磨劑存在 的量大於或等於〇·5重量％。同樣，在此範圍内需要研磨劑 的量小於或等於2.5重量％。
二研磨劑的平均顆粒尺寸在50至200奈米（nm)之間。就本 說明書之目的而言，顆粒尺寸係指研磨劑之平均顆粒尺 寸。尤其較佳地，需要使用平均顆粒尺寸在8〇至15〇 nmi 間的研磨劑。雖然將研磨劑的尺寸減至小於或等於8〇 HO 傾向於改良該抛光組合物之平坦化作肖，但{亦傾向於減 小移除速率。 研磨劑貫例包括無機氧化物、無機氫氧化物、金屬硼化 物、金屬碳化物、金屬氮化物、聚合物顆粒及包含前述研 磨劑中至少之一的混合物。適當之無機氧化物包括例如二 氧化矽（si〇2)、氧化鋁（Al2〇3)、氧化鍅（Zr〇2)、二氧化鈽 (Ce〇2)、二氧化錳（Mn〇2)或包含前述氧化物中至少之一的 99576.doc 12 200539351 組合。必要時亦可使用該等無機氧化物之經改質形式，諸 水5物塗復之無機氧化物顆粒及無機經塗覆顆粒❶適 ·· 當之金屬碳化物、硼化物及氮化物包括(例如)碳化矽、i 化矽、碳氮化秒（SiCN)、碳化硼、碳化鎢、碳化鍅、硼化 鋁、碳化组、碳化鈦或包含前述金屬碳化物、领化物及氮 化物中至少之-的組合。必要時亦可使用金剛石作為研磨 劑。替代研磨劑亦包括聚合顆粒及經塗覆之聚合顆粒。較 佳的研磨劑為二氧化鈽。 該等化合物在含有平衡水之溶液中提供在寬阳值範圍内 之功效。該溶液適用之pH值範圍自至少4至9。另外，該溶 液有利地依賴於去離子水之平衡以限制附帶的雜質。本發 明拋光流體之pH值較佳為4.5至8，更佳為5 5至75。調節 本lx月組&物pH值所用之酸係例如硝酸、硫酸、鹽酸、鱗 酸及其類似物。調節本發明組合物阳值所用之例示性驗係 例如氫氧化銨及氫氧化鉀。 % 本發明之組合物視情況可包含〇重量。/❶至5重量％之陽離 子化合物。較佳地，組合物視情況包含〇〇5重量％至丨.5重 量％之陽離子化合物。本發明之陽離子化合物可有利地促 進平坦化、調節晶圓清洗（wafer_clearing)時間及用以抑制 氧化物移除。較佳的陽離子化合物包括烷基胺、芳基胺、 帛四錄化合物及醇胺。例示性陽離子化合物包括甲胺、乙 二甲胺、二乙胺、三甲胺、三乙胺、苯胺、氫氧化四 甲銨、氫氧化四乙錄、乙醇胺及丙醇胺。 因此，本發明提供一種用於在淺溝槽隔離製程之半導體 99576.doc •13- 200539351 晶圓上拋光二氧化矽及氮化矽之組合物。該組合物有利地 包含兩性離子化合物以改良選擇性。詳言之，本發明提供 一種用於在半導體晶圓上拋光二氧化矽及氮化矽之水性組 合物，其包含0.01重量％至5重量❽/。之兩性離子化合物、 〇·〇ΐ重量％至5重量％之羧酸聚合物、0 02重量％至6重量％ 之研磨劑、〇重量％至5重量％之陽離子化合物及平衡水。 該組合物在pH 4至9範圍内展示特定經改良選擇性。 實例.
在貫例中，數字表示本發明之實例且字母表示比較性實 例。所有實例溶液皆含有u重量％之二氧化鈽及〇18重量 %之聚丙烯酸。 實例1 此试驗罝測在半導體晶圓上二氧化矽相對於氮化矽之選 擇性。詳言之，測試甜菜鹼（醋酸N，N，N-三曱銨）對於二氧 化石夕相對於氮切之選擇性的作用。在約5㈣之向下塵力 條件下使用IC1000聚胺基甲酸酯拋光墊與電 子材料CMP技術）且拋光溶液流動速率為15〇 平臺 速率為52 RPM及載劑速率為5〇 RpM時，用ipEc ο〕 200 mm拋光機研磨該等樣品。該等拋光溶液經硝酸或氨氧 化銨調節pH值為6.5。所有溶液皆含有去離子水。 99576.doc 200539351 表1
如上表1中說明，加入兩性離子化合物會改良該組合物 的遥擇性。詳言之，加入醋酸N，N，N_三甲銨將測試i之組 ^ 合物相對於氮化矽對TEOS之選擇性自40(測試A)改良至 66。加入醋酸队队^三甲銨在測試a與測試！中分別將氮化 矽自80 A/min抑制到45 A/min。加入乙醇胺在測試A與測試 B中为別將TEOS移除速率自3200 A/min抑制到1850人/min。 因此，本發明提供一種用於在淺溝槽隔離製程之半導體 晶圓上拋光二氧化矽及氮化矽之組合物。該組合物有利地 包含兩性離子化合物以在拋光製程中改良選擇性與可控 性。詳言之，本發明提供一種用於在半導體晶圓上拋光二 % 氧化矽及氮化矽之水性組合物，其包含兩性離子化合物、 羧酸聚合物、研磨劑及平衡水。本發明之混合物視情況可 含有陽離子化合物以促進平坦化、調節晶圓清洗時間及移 除-—氣化碎。 99576.doc -15-
Claims (1)
- 200539351 十、申請專利範圍： !.-種用於在半導體晶圓上拋光二氧切及氮切之水性 組合物，其包含G.(H重量％至5重量％之兩性離子化人 物、〇·(Η重量％至5重量％之幾酸聚合物、〇〇2重量％至6 重量％之研磨劑、0重量％至5重量％之陽離子化合物及平 衡水’该兩性離子化合物具有以下結構： X2^Mc/l.e X3 L 其中：η為整數；γ包含氫或燒基；ζ包含㈣、硫酸 根或氧；Μ包含氮原子、磷原子或硫原子，且χ]、心及 &獨立地包含選自包含氳、烷基及芳基之群的取代基。 2.如請求項1之組合物，其中該兩性離子化合物具有以下 結構： ^ © ?η3 $ CH3—Ν——c iH3 0 ㊀ ο 3·如請求項1之組合物，其中該陽離子化合物係選自包 含：烷基胺、芳基胺、第四銨化合物及醇胺之群。 4. 如請求項1之組合物，其中該研磨劑為二氧化鈽。 5. 如請求項4之組合物，其中該二氧化鈽平均顆粒尺寸在 50-200 nm之間。 6·如請求項1之組合物，其中該水性組合物pH值為4至9。 7 · 種用於在半導體晶圓上拋光二氧化石夕及氮化石夕之水性 組合物’其包含001重量％至5重量％之醋酸n，n，n_三甲 99576.doc 200539351 銨、0·01重量°/。至5重量％之聚丙烯酸聚合物、〇 〇2重量％ 至6重量％之二氧化鈽、0重量％至5重量％之陽離子化合 物及平衡水，其中該水性組合物pH值為4至9。 8· —種供在一半導體晶圓上拋光二氧化矽及氮化石夕之方 法，其包含 使該晶圓上之一氧化石夕與氮化石夕與一拋光組合物接 觸，該拋光組合物包含0.01重量％至5重量❹/q之兩性離子 化合物、0.01重量％至5重量％之羧酸聚合物、〇〇2重量％ 至6重量％之研磨劑、〇至5重量％之陽離子化合物及平衡 水； 用一拋光墊拋光該二氧化矽與氮化矽；及 其中該兩性離子化合物具有以下結構·· x®jL-Lc<ize X3 η其中·· η為整數；γ包含氫或烷基；2包含羧基、硫酸 根或氧；Μ包含氮原子、磷原子或硫原子，且&、&及 X3獨立地包含選自包含氫、烧基及芳基之群的取代基。 如請求項8之方法，其中該兩性離子化合物具有以下結 構： ㊉ ch3—、0Θ一 ''員8之方法，其中該陽離子化合物係選自包含·· 烷基胺、芳基胺、第四銨化合物及醇胺之群。 99576.doc 200539351 七、指定代表圖： . (一)本案指定代表圖為：（無） (二)本代表圖之元件符號簡單說明：八、本案若有化學式時，請揭示最能顯示發明特徵的化學式： X, Θ | 1 Χ2-ί|4- Xs /fe CH——Z99576.doc 200539351 發明專利說明^丨做": •(本說明書格式、順序及粗料，請勿任意更動，※記號部分請勿填寫） ※申請案號··丨。 ※申請曰期：料》IPC分類： 一、發明名稱：（中文/英文） 供化學機械拋光二氧化矽及氮化矽之組合物及方法 COMPOSITIONS AND METHODS FOR CHEMICAL MECHANICAL POLISHING SILICA AND SILICON NITRIDE 一、申請人：（共1人） 姓名或名稱：（中文/英文） 羅門哈斯電子材料CM P控股公司 ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 代表人：（中文/英文） 班德門布莱克T BIEDERMAN, BLAKE T. 住居所或營業所地址··（中文/英文） 美國•德拉瓦州19899 ·威明頓•北區市集衝η仍號a⑽室 1105 North Market Street, Suite 1300, Wilmington, DE 19899, u· S· A· 國籍··（中文/英文） 美國 / U.S.A. 93079L
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| US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
| CN109251680A (zh) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| KR102675055B1 (ko) * | 2019-09-18 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| KR20220083728A (ko) * | 2019-10-15 | 2022-06-20 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 연마 조성물 및 이의 사용 방법 |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
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| US5246624A (en) * | 1989-03-21 | 1993-09-21 | Cabot Corporation | Aqueous colloidal dispersion of fumed silica, acid and stabilizer |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
| US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
| ES2216490T3 (es) * | 1998-02-24 | 2004-10-16 | Showa Denko Kabushiki Kaisha | Composicion abrasiva para pulir un dispositivo semiconductor y procedimiento para producir un dispositivo semiconductor con la misma. |
| WO2000023534A1 (en) * | 1998-10-21 | 2000-04-27 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
| US6340370B1 (en) * | 1999-03-10 | 2002-01-22 | Sulzer Orthopedics Ltd. | Modular set of an outer shell for an artificial hip joint cup |
| KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
| US6313246B1 (en) * | 1999-07-07 | 2001-11-06 | Nalco Chemical Company | High molecular weight zwitterionic polymers |
| JP3721497B2 (ja) * | 1999-07-15 | 2005-11-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
| US6293845B1 (en) * | 1999-09-04 | 2001-09-25 | Mitsubishi Materials Corporation | System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| TWI314950B (en) * | 2001-10-31 | 2009-09-21 | Hitachi Chemical Co Ltd | Polishing slurry and polishing method |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US7291280B2 (en) * | 2004-12-28 | 2007-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
-
2004
- 2004-02-27 US US10/788,654 patent/US20050189322A1/en not_active Abandoned
-
2005
- 2005-02-14 DE DE102005006614A patent/DE102005006614A1/de not_active Withdrawn
- 2005-02-21 TW TW094105090A patent/TW200539351A/zh unknown
- 2005-02-23 FR FR0550496A patent/FR2867194B1/fr not_active Expired - Fee Related
- 2005-02-25 CN CNB200510052407XA patent/CN100339420C/zh not_active Expired - Fee Related
- 2005-02-25 KR KR1020050016085A patent/KR20060042396A/ko not_active Application Discontinuation
- 2005-02-28 JP JP2005052501A patent/JP2005252255A/ja active Pending
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|---|---|
| CN100339420C (zh) | 2007-09-26 |
| FR2867194A1 (fr) | 2005-09-09 |
| DE102005006614A1 (de) | 2005-10-13 |
| FR2867194B1 (fr) | 2006-10-20 |
| US20050189322A1 (en) | 2005-09-01 |
| CN1660923A (zh) | 2005-08-31 |
| JP2005252255A (ja) | 2005-09-15 |
| US20070007248A1 (en) | 2007-01-11 |
| KR20060042396A (ko) | 2006-05-12 |
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