FR2867194B1 - Composition et procede pour le polissage mecanique, chimique de silice et de nitrure de silicium pour semi-conducteur - Google Patents

Composition et procede pour le polissage mecanique, chimique de silice et de nitrure de silicium pour semi-conducteur

Info

Publication number
FR2867194B1
FR2867194B1 FR0550496A FR0550496A FR2867194B1 FR 2867194 B1 FR2867194 B1 FR 2867194B1 FR 0550496 A FR0550496 A FR 0550496A FR 0550496 A FR0550496 A FR 0550496A FR 2867194 B1 FR2867194 B1 FR 2867194B1
Authority
FR
France
Prior art keywords
composition
chemical polishing
mechanical
silicon nitride
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0550496A
Other languages
English (en)
Other versions
FR2867194A1 (fr
Inventor
Sarah J Lane
Brian L Mueller
Charles Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2867194A1 publication Critical patent/FR2867194A1/fr
Application granted granted Critical
Publication of FR2867194B1 publication Critical patent/FR2867194B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR0550496A 2004-02-27 2005-02-23 Composition et procede pour le polissage mecanique, chimique de silice et de nitrure de silicium pour semi-conducteur Expired - Fee Related FR2867194B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/788,654 US20050189322A1 (en) 2004-02-27 2004-02-27 Compositions and methods for chemical mechanical polishing silica and silicon nitride

Publications (2)

Publication Number Publication Date
FR2867194A1 FR2867194A1 (fr) 2005-09-09
FR2867194B1 true FR2867194B1 (fr) 2006-10-20

Family

ID=34861969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0550496A Expired - Fee Related FR2867194B1 (fr) 2004-02-27 2005-02-23 Composition et procede pour le polissage mecanique, chimique de silice et de nitrure de silicium pour semi-conducteur

Country Status (7)

Country Link
US (2) US20050189322A1 (fr)
JP (1) JP2005252255A (fr)
KR (1) KR20060042396A (fr)
CN (1) CN100339420C (fr)
DE (1) DE102005006614A1 (fr)
FR (1) FR2867194B1 (fr)
TW (1) TW200539351A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
WO2006035779A1 (fr) * 2004-09-28 2006-04-06 Hitachi Chemical Co., Ltd. Compose de polissage cmp et procede de polissage de substrat
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
TWI408215B (zh) * 2005-12-21 2013-09-11 Anji Microelectronics Co Ltd 化學機械拋光液
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers
JP5157908B2 (ja) * 2006-09-13 2013-03-06 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101256551B1 (ko) * 2008-03-06 2013-04-19 주식회사 엘지화학 Ｃｍｐ 슬러리 및 이를 이용한 연마 방법
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
CN109251680A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
KR20210033155A (ko) * 2019-09-18 2021-03-26 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
CN113039039A (zh) * 2019-10-15 2021-06-25 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

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US5246624A (en) * 1989-03-21 1993-09-21 Cabot Corporation Aqueous colloidal dispersion of fumed silica, acid and stabilizer
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
JP3672493B2 (ja) * 1998-02-24 2005-07-20 昭和電工株式会社 半導体装置研磨用研磨材組成物及びそれを用いた半導体装置の製造方法
AU1219600A (en) * 1998-10-21 2000-05-08 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
US6340370B1 (en) * 1999-03-10 2002-01-22 Sulzer Orthopedics Ltd. Modular set of an outer shell for an artificial hip joint cup
KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
US6313246B1 (en) * 1999-07-07 2001-11-06 Nalco Chemical Company High molecular weight zwitterionic polymers
JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
US6293845B1 (en) * 1999-09-04 2001-09-25 Mitsubishi Materials Corporation System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
CN101058713B (zh) * 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US7291280B2 (en) * 2004-12-28 2007-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials

Also Published As

Publication number Publication date
JP2005252255A (ja) 2005-09-15
KR20060042396A (ko) 2006-05-12
TW200539351A (en) 2005-12-01
CN100339420C (zh) 2007-09-26
FR2867194A1 (fr) 2005-09-09
US20050189322A1 (en) 2005-09-01
US20070007248A1 (en) 2007-01-11
DE102005006614A1 (de) 2005-10-13
CN1660923A (zh) 2005-08-31

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Effective date: 20081031