EP1955813A4 - Procédé de fabrication d'une tranche de silicium - Google Patents

Procédé de fabrication d'une tranche de silicium

Info

Publication number
EP1955813A4
EP1955813A4 EP06797349A EP06797349A EP1955813A4 EP 1955813 A4 EP1955813 A4 EP 1955813A4 EP 06797349 A EP06797349 A EP 06797349A EP 06797349 A EP06797349 A EP 06797349A EP 1955813 A4 EP1955813 A4 EP 1955813A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
silicon wafer
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06797349A
Other languages
German (de)
English (en)
Other versions
EP1955813B1 (fr
EP1955813A1 (fr
Inventor
Hiroshi Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP1955813A1 publication Critical patent/EP1955813A1/fr
Publication of EP1955813A4 publication Critical patent/EP1955813A4/fr
Application granted granted Critical
Publication of EP1955813B1 publication Critical patent/EP1955813B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP06797349A 2005-09-28 2006-09-04 Procédé de fabrication d'une tranche de silicium (110) Active EP1955813B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005281127A JP4951914B2 (ja) 2005-09-28 2005-09-28 （１１０）シリコンウエーハの製造方法
PCT/JP2006/317424 WO2007037096A1 (fr) 2005-09-28 2006-09-04 Procédé de fabrication d’une tranche de silicium

Publications (3)

Publication Number Publication Date
EP1955813A1 EP1955813A1 (fr) 2008-08-13
EP1955813A4 true EP1955813A4 (fr) 2009-02-18
EP1955813B1 EP1955813B1 (fr) 2009-12-23

Family

ID=37899527

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06797349A Active EP1955813B1 (fr) 2005-09-28 2006-09-04 Procédé de fabrication d'une tranche de silicium (110)

Country Status (6)

Country Link
US (1) US7699050B2 (fr)
EP (1) EP1955813B1 (fr)
JP (1) JP4951914B2 (fr)
KR (1) KR101209089B1 (fr)
DE (1) DE602006011362D1 (fr)
WO (1) WO2007037096A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5023900B2 (ja) * 2006-09-05 2012-09-12 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ
DE102007019566B4 (de) * 2007-04-25 2012-11-29 Siltronic Ag Drahtführungsrolle für Drahtsäge
JP5645000B2 (ja) * 2010-01-26 2014-12-24 国立大学法人埼玉大学 基板加工方法
DE102010007459B4 (de) * 2010-02-10 2012-01-19 Siltronic Ag Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Kristall aus Halbleitermaterial
DE102010028931A1 (de) 2010-05-12 2011-11-17 Thomas Vogel Drahtsägevorrichtung zum Herstellen von Wafern
WO2012165108A1 (fr) 2011-06-02 2012-12-06 住友電気工業株式会社 Procédé pour la production d'un substrat en carbure de silicium
JP2013008769A (ja) * 2011-06-23 2013-01-10 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法
JP5996308B2 (ja) * 2012-07-10 2016-09-21 コマツＮｔｃ株式会社 ワイヤソー
US9499921B2 (en) 2012-07-30 2016-11-22 Rayton Solar Inc. Float zone silicon wafer manufacturing system and related process
US9404198B2 (en) * 2012-07-30 2016-08-02 Rayton Solar Inc. Processes and apparatuses for manufacturing wafers
JP6132621B2 (ja) * 2013-03-29 2017-05-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶インゴットのスライス方法
JP6000235B2 (ja) 2013-12-24 2016-09-28 信越半導体株式会社 ワークの切断方法及びワーク保持治具
CN111267248A (zh) * 2020-03-12 2020-06-12 常州时创能源股份有限公司 非100晶向单晶硅片的制备方法
CN113696356A (zh) * 2020-05-09 2021-11-26 泰州隆基乐叶光伏科技有限公司 一种单晶硅片的制备方法、电池片及电池组件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798092A2 (fr) * 1996-03-29 1997-10-01 Shin-Etsu Handotai Co., Ltd Procédé pour découper un lingot monocristallin en matériau semi-conducteur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3539773B2 (ja) 1994-09-19 2004-07-07 信越化学工業株式会社 ワイヤソーおよびワイヤソーによる切断方法
JP2842307B2 (ja) * 1995-06-30 1999-01-06 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の切断方法
TW355151B (en) * 1995-07-07 1999-04-01 Tokyo Seimitsu Co Ltd A method for cutting single chip material by the steel saw
TW330884B (en) * 1996-03-26 1998-05-01 Shinetsu Handotai Co Ltd Wire saw and method of slicing a cylindrical workpiece
JP2002283340A (ja) * 2001-03-26 2002-10-03 Memc Japan Ltd インゴットの切断方法
US6802928B2 (en) * 2002-03-29 2004-10-12 Sumitomo Mitsubishi Silicon Corporation Method for cutting hard and brittle material
JP4407188B2 (ja) * 2003-07-23 2010-02-03 信越半導体株式会社 シリコンウェーハの製造方法およびシリコンウェーハ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798092A2 (fr) * 1996-03-29 1997-10-01 Shin-Etsu Handotai Co., Ltd Procédé pour découper un lingot monocristallin en matériau semi-conducteur

Also Published As

Publication number Publication date
EP1955813B1 (fr) 2009-12-23
JP4951914B2 (ja) 2012-06-13
KR20080060232A (ko) 2008-07-01
US20090084373A1 (en) 2009-04-02
DE602006011362D1 (de) 2010-02-04
JP2007090466A (ja) 2007-04-12
US7699050B2 (en) 2010-04-20
KR101209089B1 (ko) 2012-12-06
EP1955813A1 (fr) 2008-08-13
WO2007037096A1 (fr) 2007-04-05

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