CN1660923A - 化学机械抛光氧化硅和氮化硅的组合物与方法 - Google Patents
化学机械抛光氧化硅和氮化硅的组合物与方法 Download PDFInfo
- Publication number
- CN1660923A CN1660923A CN200510052407XA CN200510052407A CN1660923A CN 1660923 A CN1660923 A CN 1660923A CN 200510052407X A CN200510052407X A CN 200510052407XA CN 200510052407 A CN200510052407 A CN 200510052407A CN 1660923 A CN1660923 A CN 1660923A
- Authority
- CN
- China
- Prior art keywords
- composition
- compound
- polishing
- silicon nitride
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000005498 polishing Methods 0.000 title claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 14
- 239000000377 silicon dioxide Substances 0.000 title abstract description 4
- 239000000126 substance Substances 0.000 title description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- -1 Z comprises oxatyl Chemical compound 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 125000003118 aryl group Chemical group 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 26
- 150000005846 sugar alcohols Polymers 0.000 claims description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 150000004982 aromatic amines Chemical class 0.000 claims description 3
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 13
- 229920000642 polymer Polymers 0.000 abstract description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract 1
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 125000001424 substituent group Chemical group 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 125000004434 sulfur atom Chemical group 0.000 abstract 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 12
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000005250 alkyl acrylate group Chemical group 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N 2-butenoic acid Chemical compound CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000003352 sequestering agent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- IOTNLSAKNNGZGC-UHFFFAOYSA-N 3-ethenyloxolan-2-one Chemical compound C=CC1CCOC1=O IOTNLSAKNNGZGC-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-M benzoate Chemical compound [O-]C(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-M 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 1
- 125000004452 carbocyclyl group Chemical group 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 229920006237 degradable polymer Polymers 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N ethyl acetate Substances CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括以重量百分数计，0.01－5的两性离子化合物，0.01－5的羧酸聚合物，0.02－6的磨蚀剂，0－5的阳离子化合物和余量的水，其中该两性离子化合物具有下述结构：其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸盐或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
Description
发明背景
[0001]本发明涉及半导体晶片材料的化学机械平面化(CMP)，和更特别地涉及在浅槽分离(STI)工艺中抛光来自半导体晶片的氧化硅和氮化硅的CMP组合物和方法。
[0002]减少器件尺寸和增加微电子电路内的集成化密度已要求相应降低孤立结构的尺寸。这种降低助长了提供有效隔离的结构的可重复形成，同时占据最小量的基底表面。
[0003]STI技术是一种广泛使用的半导体制造方法，以供形成孤立结构，电隔离在集成电路内形成的各种有源组件。使用STI技术相对于常规LOCOS(硅的局部氧化)技术的一个主要优点是，CMOS(互补金属氧化物半导体)IC器件的高可量测性，以供在亚微米的集成化水平下制造。另一优点是，STI技术辅助防止出现所谓的鸟嘴侵入(encroachment)，所述鸟嘴侵入是形成孤立结构的LOCOS技术的特征。
[0004]在STI技术中，第一步是在基底的预定位置处，通常通过各向异性蚀刻，形成多个沟槽。接下来，氧化硅沉积在这些沟槽中的每一个内。然后通过CMP抛光氧化硅，向下一直到氮化硅(终止层)上，形成STI结构。为了实现有效的抛光，抛光浆料必须提供高选择性，所述高选择性包括相对于氮化硅，氧化硅的除去速度(“选择性”)。
[0005]Kido等在美国专利申请公开No.2002/0045350中公开了一种含氧化铈和水溶性有机化合物的已知磨蚀组合物，用以抛光半导体器件。任选地，该组合物含有粘度调节剂、缓冲液、表面活性剂和螯合剂，但没有具体公开任何一种。尽管Kido的组合物提供充分的选择性，但在微电子电路中愈来愈增加的集成化密度要求改进的组合物和方法。
[0006]因此，所需要的是化学机械抛光氧化硅和氮化硅的组合物和方法，用于具有改进选择性的浅槽分离工艺。
本发明的描述
[0007]在第一方面中，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括以重量百分数计，0.01-5的两性离子化合物，0.01-5的羧酸聚合物，0.02-6的磨蚀剂，0-5的阳离子化合物和余量的水，其中该两性离子化合物具有下述结构：
其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸根或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
[0008]在第二方面中，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括以重量百分数计，0.01-5的N，N，N-三甲基乙酸铵(ammonioacetate)，0.01-5的聚丙烯酸聚合物，0.02-6的二氧化铈，0-5的阳离子化合物和余量的水，其中该含水组合物的pH为4-9。
[0009]在第三方面中，本发明提供抛光在半导体晶片上的氧化硅和氮化硅的方法，该方法包括：使在晶片上的氧化硅和氮化硅与抛光组合物接触，该抛光组合物包括以重量百分数计，0.01-5的两性离子化合物，0.01-5的羧酸聚合物，0.02-6的磨蚀剂，0-5的阳离子化合物和余量的水；用抛光垫(pad)抛光氧化硅和氮化硅；和其中该两性离子化合物具有下述结构：
其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸根或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
发明详述
[0010]该组合物和方法提供相对于氮化硅除去氧化硅的预料不到的选择性。该组合物有利地依赖于螯合剂或选择性提高剂，相对于氮化硅选择抛光氧化硅用于浅槽分离工艺。特别地，该组合物包括两性离子化合物，以便在应用的pH下相对于氮化硅选择抛光氧化硅。
[0011]如此处所定义的，术语“烷基”是指优选含有1-20个碳原子的取代或未取代的、直链、支链或环状烃链。烷基包括例如甲基、乙基、丙基、异丙基、环丙基、丁基、异丁基、叔丁基、仲丁基、环丁基、戊基、环戊基、己基和环己基。
[0012]术语“芳基”是指优选含有6-20个碳原子的取代或未取代的芳族碳环基。芳基可以是单环或多环芳基。芳基包括例如苯基、萘基、联苯基、苄基、甲苯基、二甲苯基、苯乙基、苯甲酸根、烷基苯甲酸根、苯胺和N-烷基苯胺基。
[0013]术语“两性离子化合物”是指含有通过物理桥，例如CH2基连接的相等比例的阳离子和阴离子取代基的化合物，以便该化合物总体为净中性。本发明的两性离子化合物包括下述结构：
其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸根或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
[0014]优选的两性离子化合物包括例如甜菜碱。本发明的优选甜菜碱是用下述结构表示的N，N，N-三甲基乙酸铵：
[0015]该组合物有利地含有0.01-5wt％的两性离子化合物，以便相对于氮化硅，选择除去氧化硅。有利地，该组合物含有0.05-1.5wt％的两性离子化合物。本发明的两性离子化合物可有利地促进平面化(planarization)和可抑制氮化物的除去。
[0016]除了两性离子化合物以外，该组合物还有利地含有0.01-5wt％的羧酸聚合物。优选地，该组合物含有0.05-1.5wt％的羧酸聚合物。此外，聚合物的数均分子量优选为4000-1500000。另外，可使用较高和较低数均分子量的羧酸聚合物的共混物。这些羧酸聚合物通常为溶液形式，但可以是水分散液形式。羧酸聚合物有利地充当(以下所述的)磨蚀剂颗粒的分散剂。通过GPC(凝胶渗透色谱法)测定前述聚合物的数均分子量。
[0017]由不饱和单羧酸和不饱和二羧酸形成羧酸聚合物。典型的不饱和单羧酸单体含有3-6个碳原子和包括丙烯酸、低聚丙烯酸、甲基丙烯酸、巴豆酸和乙烯基乙酸。典型的不饱和二羧酸含有4-8个碳原子和包括其酸酐，和例如是马来酸、马来酸酐、富马酸、戊二酸、衣康酸、衣康酸酐和环己烯二羧酸。另外，也可使用前述酸的水溶性盐。
[0018]特别有用的是数均分子量为约1000-1500000，优选3000-250000，和更优选20000-200000的“聚(甲基)丙烯酸”。此处所使用的术语“聚(甲基)丙烯酸”定义为丙烯酸的聚合物、甲基丙烯酸的聚合物或丙烯酸和甲基丙烯酸的共聚物。特别优选各种数均分子量的聚(甲基)丙烯酸的共混物。在聚(甲基)丙烯酸的这些共混物或混合物中，与数均分子量为150000-1500000，优选200000-300000的较高数均分子量的聚(甲基)丙烯酸结合使用数均分子量为1000-100000和优选4000-40000的较低数均分子量的聚(甲基)丙烯酸。典型地，较低数均分子量的聚(甲基)丙烯酸对较高数均分子量的聚(甲基)丙烯酸的重量百分比为约10∶1到1∶10，优选5∶1到1∶5，和更优选3∶1到2∶3。优选的共混物包括重量比为2∶1的数均分子量为约20000的聚(甲基)丙烯酸和数均分子量为约200000的聚(甲基)丙烯酸。
[0019]另外，可使用其中羧酸组分占聚合物重量5-75％的含有羧酸的共聚物和三元共聚物。这种聚合物典型的是(甲基)丙烯酸和丙烯酰胺或甲基丙烯酰胺的聚合物；(甲基)丙烯酸和苯乙烯和其它乙烯基芳族单体的聚合物；(甲基)丙烯酸烷酯(丙烯酸或甲基丙烯酸的酯)和单或二羧酸，如丙烯酸或甲基丙烯酸或衣康酸的聚合物；具有取代基如卤素(即氯、氟、溴)、硝基、氰基、烷氧基、卤代烷基、羧基、氨基、氨基烷基的取代乙烯基芳族单体和不饱和的单或二羧酸和(甲基)丙烯酸烷酯的聚合物；含有氮环的单烯键式不饱和单体，如乙烯基吡啶、烷基乙烯基吡啶、乙烯基丁内酯、乙烯基己内酰胺，和不饱和单或二羧酸的聚合物；烯烃，如丙烯、异丁烯或具有10-20个碳原子的长链烷基烯烃和不饱和单或二羧酸的聚合物；乙烯醇酯，如乙酸乙烯酯和硬脂酸乙烯酯或卤乙烯，如氟乙烯、氯乙烯、偏氟乙烯或乙烯腈类，如丙烯腈和甲基丙烯腈和不饱和单或二羧酸的聚合物；在烷基中具有1-24个碳原子的(甲基)丙烯酸烷酯和不饱和单或二羧酸，如丙烯酸或甲基丙烯酸的聚合物。这些仅仅是可在本发明的新型抛光组合物中使用的各种聚合物的一些实例。此外，可使用可生物降解、可光降解或通过其它方式可降解的聚合物。可生物降解的这种组分的实例是含有聚(丙烯酸酯共2-氰基丙烯酸甲酯)链段的聚丙烯酸聚合物。
[0020]有利地，抛光组合物含有0.2-6wt％的磨蚀剂以促进氧化硅的除去。在这一范围内，理想的是具有以大于或等于0.5wt％的用量存在的磨蚀剂。此外，在这一范围内理想的是小于或等于2.5wt％的用量。
[0021]磨蚀剂的平均粒度为50-200纳米(nm)。为了此处说明的目的，粒度是指磨蚀剂的平均粒度。更优选，理想的是使用平均粒度为80至150nm的磨蚀剂。降低磨蚀剂的尺寸到小于或等于80nm倾向于改进抛光组合物的平面化，但它也倾向于降低除去速度。
[0022]磨蚀剂的实例包括无机氧化物、无机氢氧化物、金属硼化物、金属碳化物、金属氮化物、聚合物颗粒和含至少一种前述物质的混合物。合适的无机氧化物包括例如氧化硅(SiO2)、氧化铝(Al2O3)、氧化锆(ZrO2)、二氧化铈(CeO2)、氧化锰(MnO2)或含至少一种前述氧化物的混合物。也可视需要使用这些无机氧化物的改性形式，如聚合物涂布的无机氧化物颗粒和无机涂布颗粒。合适的金属碳化物、硼化物和氮化物包括，例如碳化硅、氮化硅、碳氮化硅(SiCN)、碳化硼、碳化钨、碳化锆、硼化铝、碳化钽、碳化钛或含有至少一种前述金属碳化物、硼化物和氮化物的混合物。视需要，金刚石也可用作磨蚀剂。可供替代的磨蚀剂还包括聚合物颗粒和涂布的聚合物颗粒。优选的磨蚀剂是二氧化铈。
[0023]该化合物在宽的pH范围内在含有余量水的溶液中提供功效。该溶液的有用pH范围从至少4延伸到9。另外，该溶液有利地依赖于余量的去离子水限制附随的杂质。本发明的抛光流体的pH优选为4.5-8，更优选pH为5.5-7.5。调节本发明组合物pH所使用的酸例如是硝酸、硫酸、盐酸、磷酸和类似物。调节本发明pH所使用的例举碱例如是氢氧化铵和氢氧化钾。
[0024]任选地，本发明的组合物可包括0-5wt％的阳离子化合物。优选地，该组合物任选地包括0.05-1.5wt％的阳离子化合物。本发明的阳离子化合物可有利地促进平面化，调节晶片的清洁时间和起到抑制氧化物除去的作用。优选的阳离子化合物包括烷胺、芳基胺、季铵化合物和醇胺。例举的阳离子化合物包括甲胺、乙胺、二甲胺、二乙胺、三甲胺、三乙胺、苯胺、四甲基氢氧化铵、四乙基氢氧化铵、乙醇胺和丙醇胺。
[0025]因此，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的组合物以供浅槽分离工艺。该组合物有利地包括改进选择性用的两性离子化合物。特别地，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括0.01-5的两性离子化合物，0.01-5的羧酸聚合物，0.02-6的磨蚀剂，0-5的阳离子化合物和余量的水。该组合物4-9的pH范围内显示出尤其改进的选择性。
实施例
[0026]在实施例中，数字表示本发明的实施例和字母表示对比例。所有实施例的溶液含有以重量百分数为单位计，1.8的二氧化铈和0.18的多羧酸。
实施例1
[0027]该实验测量在半导体晶片上相对于氮化硅，氧化硅的选择性。特别是，测试甜菜碱(N，N，N-三甲基乙酸铵)对相对于氮化硅，氧化硅的选择性的影响。在约5psi的向下力条件和150cc/min的抛光溶液流速，52RPM的台板速度和50RPM的载体速度，使用IC 1000TM聚氨酯抛光垫(Rohm and Haas Electronic Materials CMP Technologies)的IPEC472 DE 200mm抛光机，平面化样品。抛光溶液具有用硝酸或氢氧化铵调节的6.5的pH。所有溶液含有去离子水。
表1
| 试验 | 磨蚀剂(wt％) | PAA(wt％) | 甜菜碱(wt％) | 乙醇胺(wt％) | TEOS(埃/分钟) | SiN(埃/分钟) | 选择率 |
| A | 1.8 | 0.18 | - | - | 3200 | 80 | 40 |
| 1 | 1.8 | 0.18 | 0.5 | - | 3000 | 45 | 66 |
| B | 1.8 | 0.18 | - | 0.3 | 1850 | 130 | 14 |
| 3 | 1.8 | 0.18 | 0.5 | 0.3 | 2500 | 130 | 19 |
[0028]如上表1所示，添加两性离子化合物改进组合物的选择率。特别是添加N，N，N-三甲基乙酸铵改进试验1中组合物对TEOS相对于氮化硅的选择率，从40(试验A)到66。添加N，N，N-三甲基乙酸铵抑制氮化硅，在试验A和试验1中分别为80埃/分钟和45埃/分钟。添加乙醇胺抑制TEOS的除去速度，在试验A和试验B中分别为3200埃/分钟和1850埃/分钟。
[0029]因此，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的组合物以供浅槽分离工艺。该组合物有利地包括在抛光工艺过程中改进的选择性和可控性用的两性离子化合物。特别地，本发明提供可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括两性离子化合物，羧酸聚合物，磨蚀剂，和余量的水。任选地，本发明的组合物可含有阳离子化合物以促进平面化，调节晶片的清洁时间和氧化硅的除去。
Claims (10)
1.一种可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括以重量百分数计，0.01-5的两性离子化合物，0.01-5的羧酸聚合物，0.02-6的磨蚀剂，0-5的阳离子化合物和余量的水，该两性离子化合物具有下述结构：
其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸根或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
2.权利要求1的组合物，其中该两性离子化合物具有下述结构：
3.权利要求1的组合物，其中阳离子化合物选自烷胺、芳基胺、季铵化合物和醇胺。
4.权利要求1的组合物，其中磨蚀剂是二氧化铈。
5.权利要求4的组合物，其中二氧化铈的平均粒度为50-200nm。
6.权利要求1的组合物，其中含水组合物的pH为4-9。
7.可用于抛光在半导体晶片上的氧化硅和氮化硅的含水组合物，它包括以重量百分数计，0.01-5的N，N，N-三甲基乙酸铵，0.01-5的聚丙烯酸聚合物，0.02-6的二氧化铈，0-5的阳离子化合物和余量的水，其中该含水组合物的pH为4-9。
8.一种抛光在半导体晶片上的氧化硅和氮化硅的方法，该方法包括：
使在晶片上的氧化硅和氮化硅与抛光组合物接触，该抛光组合物包括以重量百分数计，0.01-5的两性离子化合物，0.01-5的羧酸聚合物，0.02-6的磨蚀剂，0-5的阳离子化合物和余量的水；
用抛光垫抛光氧化硅和氮化硅；和
其中该两性离子化合物具有下述结构：
其中n为整数，Y包括氢或烷基，Z包括羧基、硫酸根或氧，M包括氮、磷或硫原子，和X1、X2和X3独立地包括选自氢、烷基和芳基中的取代基。
9.权利要求8的方法，其中该两性离子化合物具有下述结构：
10.权利要求8的方法，其中阳离子化合物选自烷胺、芳基胺、季铵化合物和醇胺。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/788,654 | 2004-02-27 | ||
| US10/788,654 US20050189322A1 (en) | 2004-02-27 | 2004-02-27 | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1660923A true CN1660923A (zh) | 2005-08-31 |
| CN100339420C CN100339420C (zh) | 2007-09-26 |
Family
ID=34861969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510052407XA Expired - Fee Related CN100339420C (zh) | 2004-02-27 | 2005-02-25 | 化学机械抛光氧化硅和氮化硅的组合物与方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20050189322A1 (zh) |
| JP (1) | JP2005252255A (zh) |
| KR (1) | KR20060042396A (zh) |
| CN (1) | CN100339420C (zh) |
| DE (1) | DE102005006614A1 (zh) |
| FR (1) | FR2867194B1 (zh) |
| TW (1) | TW200539351A (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101959983A (zh) * | 2008-03-06 | 2011-01-26 | 株式会社Lg化学 | Cmp浆料及使用该浆料进行抛光的方法 |
| CN102464946A (zh) * | 2010-11-19 | 2012-05-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN103180101A (zh) * | 2010-08-23 | 2013-06-26 | 福吉米株式会社 | 研磨用组合物及使用其的研磨方法 |
| CN111334193A (zh) * | 2018-12-19 | 2020-06-26 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| CN113039039A (zh) * | 2019-10-15 | 2021-06-25 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| JP4755984B2 (ja) * | 2004-09-28 | 2011-08-24 | 日立化成工業株式会社 | Ｃｍｐ研磨剤及び基板の研磨方法 |
| US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
| TWI408215B (zh) * | 2005-12-21 | 2013-09-11 | Anji Microelectronics Co Ltd | 化學機械拋光液 |
| US20070176141A1 (en) * | 2006-01-30 | 2007-08-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
| JP5157908B2 (ja) * | 2006-09-13 | 2013-03-06 | 旭硝子株式会社 | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| KR100949250B1 (ko) | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
| CN109251680A (zh) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| KR102675055B1 (ko) * | 2019-09-18 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246624A (en) * | 1989-03-21 | 1993-09-21 | Cabot Corporation | Aqueous colloidal dispersion of fumed silica, acid and stabilizer |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
| US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
| ATE266071T1 (de) * | 1998-02-24 | 2004-05-15 | Showa Denko Kk | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
| WO2000023534A1 (en) * | 1998-10-21 | 2000-04-27 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
| US6340370B1 (en) * | 1999-03-10 | 2002-01-22 | Sulzer Orthopedics Ltd. | Modular set of an outer shell for an artificial hip joint cup |
| KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
| US6313246B1 (en) * | 1999-07-07 | 2001-11-06 | Nalco Chemical Company | High molecular weight zwitterionic polymers |
| JP3721497B2 (ja) * | 1999-07-15 | 2005-11-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
| US6293845B1 (en) * | 1999-09-04 | 2001-09-25 | Mitsubishi Materials Corporation | System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US20050050803A1 (en) * | 2001-10-31 | 2005-03-10 | Jin Amanokura | Polishing fluid and polishing method |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US7291280B2 (en) * | 2004-12-28 | 2007-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
-
2004
- 2004-02-27 US US10/788,654 patent/US20050189322A1/en not_active Abandoned
-
2005
- 2005-02-14 DE DE102005006614A patent/DE102005006614A1/de not_active Withdrawn
- 2005-02-21 TW TW094105090A patent/TW200539351A/zh unknown
- 2005-02-23 FR FR0550496A patent/FR2867194B1/fr not_active Expired - Fee Related
- 2005-02-25 KR KR1020050016085A patent/KR20060042396A/ko not_active Application Discontinuation
- 2005-02-25 CN CNB200510052407XA patent/CN100339420C/zh not_active Expired - Fee Related
- 2005-02-28 JP JP2005052501A patent/JP2005252255A/ja active Pending
-
2006
- 2006-09-12 US US11/519,282 patent/US20070007248A1/en not_active Abandoned
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101959983A (zh) * | 2008-03-06 | 2011-01-26 | 株式会社Lg化学 | Cmp浆料及使用该浆料进行抛光的方法 |
| CN101959983B (zh) * | 2008-03-06 | 2014-07-30 | 株式会社Lg化学 | Cmp浆料及使用该浆料进行抛光的方法 |
| US8969204B2 (en) | 2008-03-06 | 2015-03-03 | Lg Chem, Ltd. | CMP slurry and a polishing method using the same |
| CN103180101A (zh) * | 2010-08-23 | 2013-06-26 | 福吉米株式会社 | 研磨用组合物及使用其的研磨方法 |
| US10508222B2 (en) | 2010-08-23 | 2019-12-17 | Fujimi Incorporated | Polishing composition and polishing method using same |
| CN102464946A (zh) * | 2010-11-19 | 2012-05-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN111334193A (zh) * | 2018-12-19 | 2020-06-26 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| CN111334193B (zh) * | 2018-12-19 | 2022-05-24 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| US11424131B2 (en) | 2018-12-19 | 2022-08-23 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| CN113039039A (zh) * | 2019-10-15 | 2021-06-25 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| US11732157B2 (en) | 2019-10-15 | 2023-08-22 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100339420C (zh) | 2007-09-26 |
| DE102005006614A1 (de) | 2005-10-13 |
| US20070007248A1 (en) | 2007-01-11 |
| JP2005252255A (ja) | 2005-09-15 |
| KR20060042396A (ko) | 2006-05-12 |
| FR2867194A1 (fr) | 2005-09-09 |
| US20050189322A1 (en) | 2005-09-01 |
| FR2867194B1 (fr) | 2006-10-20 |
| TW200539351A (en) | 2005-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100339420C (zh) | 化学机械抛光氧化硅和氮化硅的组合物与方法 | |
| CN100350567C (zh) | 化学机械抛光二氧化硅和氮化硅的组合物和方法 | |
| CN101054498A (zh) | 用于对二氧化硅和氮化硅进行化学机械抛光的组合物 | |
| KR101406642B1 (ko) | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트 | |
| JP5016220B2 (ja) | 窒化ケイ素上の二酸化ケイ素をケミカルメカニカル研磨するための多工程法 | |
| US7736530B2 (en) | CMP slurry and method for polishing semiconductor wafer using the same | |
| US20090314744A1 (en) | CMP method for metal-containing substrates | |
| KR20100074207A (ko) | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 | |
| CN1317742C (zh) | 降低半导体晶片磨蚀的化学机械磨平组合物 | |
| KR20160135774A (ko) | 혼합 마모제 텅스텐 cmp 조성물 | |
| KR20160138149A (ko) | 혼합 마모제 텅스텐 cmp 조성물 | |
| CN101012357A (zh) | 用来化学机械抛光层间介电层的组合物和方法 | |
| US8147711B2 (en) | Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry | |
| CN1837321A (zh) | 化学机械抛光层间介电层的组合物和方法 | |
| EP3775076A2 (en) | Barrier ruthenium chemical mechanical polishing slurry | |
| US20120187333A1 (en) | Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same | |
| CN1637100A (zh) | 用于化学机械抛光氧化硅和氮化硅的组合物和方法 | |
| CN1680508A (zh) | 半导体芯片化学机械研磨剂及其配制方法 | |
| KR20210142756A (ko) | 텅스텐 버프 적용을 위한 표면 코팅된 연마제 입자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |