TW200518229A - Method for high resolution processing of thin layers using electron beams - Google Patents
Method for high resolution processing of thin layers using electron beamsInfo
- Publication number
- TW200518229A TW200518229A TW093124858A TW93124858A TW200518229A TW 200518229 A TW200518229 A TW 200518229A TW 093124858 A TW093124858 A TW 093124858A TW 93124858 A TW93124858 A TW 93124858A TW 200518229 A TW200518229 A TW 200518229A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- vacuum chamber
- electron beam
- introducing
- high resolution
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000010894 electron beam technology Methods 0.000 title abstract 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10338019A DE10338019A1 (de) | 2003-08-19 | 2003-08-19 | Verfahren zum hochaufgelösten Bearbeiten dünner Schichten mit Elektronenstrahlen |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200518229A true TW200518229A (en) | 2005-06-01 |
TWI257673B TWI257673B (en) | 2006-07-01 |
Family
ID=34177683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093124858A TWI257673B (en) | 2003-08-19 | 2004-08-18 | Method for high resolution processing of thin layers using electron beams |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1664924B8 (zh) |
JP (1) | JP2007503009A (zh) |
KR (1) | KR101285450B1 (zh) |
CN (1) | CN1839349B (zh) |
AT (1) | ATE556355T1 (zh) |
DE (1) | DE10338019A1 (zh) |
TW (1) | TWI257673B (zh) |
WO (1) | WO2005017949A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI620981B (zh) * | 2015-10-26 | 2018-04-11 | Eo科技股份有限公司 | 用於修正光罩的系統與方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7670956B2 (en) | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
JP5373298B2 (ja) | 2008-03-04 | 2013-12-18 | 株式会社日立ハイテクサイエンス | Euvlマスクの加工方法 |
DE102008037943B4 (de) | 2008-08-14 | 2018-04-26 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens |
DE102008037951B4 (de) * | 2008-08-14 | 2018-02-15 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten |
DE102008037944B4 (de) | 2008-08-14 | 2013-03-21 | Carl Zeiss Sms Gmbh | Verfahren zum elektronenstrahlinduzierten Abscheiden von leitfähigem Material |
DE102008062928A1 (de) | 2008-12-23 | 2010-07-01 | Nawotec Gmbh | Verfahren zum Ermitteln einer Reparaturform eines Defekts an oder in der Nähe einer Kante eines Substrats einer Photomaske |
JP2012073553A (ja) * | 2010-09-30 | 2012-04-12 | Hoya Corp | フォトマスクの欠陥修正方法、フォトマスクの製造方法、及びフォトマスク、並びにパターン転写方法 |
DE102013203995B4 (de) | 2013-03-08 | 2020-03-12 | Carl Zeiss Smt Gmbh | Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl |
KR20220132603A (ko) * | 2015-06-17 | 2022-09-30 | 인텔 코포레이션 | 디바이스 제조를 위한 산화물 층들의 원자 층 제거에 의한 전이 금속 건식 에칭 |
DE102016203094B4 (de) | 2016-02-26 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske |
DE102017208114A1 (de) | 2017-05-15 | 2018-05-03 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Teilchenstrahl-induzierten Ätzen einer photolithographischen Maske |
DE102018222522A1 (de) * | 2018-12-20 | 2020-06-25 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb einer Gaszuführungseinrichtung sowie Gaszuführungseinrichtung zur Durchführung des Verfahrens und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
DE102020208883B4 (de) | 2020-07-16 | 2023-06-15 | Carl Zeiss Smt Gmbh | Verfahren und Computerprogramm zur Reparatur einer Maske für die Lithographie |
DE102020120884A1 (de) * | 2020-08-07 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Ätzen einer Lithographiemaske |
DE102021206100A1 (de) | 2021-06-15 | 2022-12-15 | Carl Zeiss Smt Gmbh | Verfahren, vorrichtung und computerprogramm zur bearbeitung einer oberfläche eines objekts |
DE102022202061A1 (de) | 2022-03-01 | 2023-09-07 | Carl Zeiss Smt Gmbh | Verfahren und vorrichtung zur maskenreparatur |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2003921A (en) * | 1933-06-02 | 1935-06-04 | Francois Cementation Co Ltd | Process for waterproofing or filling cavities in the ground or in structures |
US4239954A (en) * | 1978-12-11 | 1980-12-16 | United Technologies Corporation | Backer for electron beam hole drilling |
CH643941A5 (en) * | 1979-11-16 | 1984-06-29 | Elesta Ag Elektronik Bad Ragaz | Method and device for producing optical scales, and scale produced according to the method |
JPS604271B2 (ja) * | 1981-08-03 | 1985-02-02 | 三菱電機株式会社 | クロム系金属膜のドライエツチング方法 |
JPH04718A (ja) * | 1990-04-18 | 1992-01-06 | Toshiba Corp | 表面処理装置 |
JP3238550B2 (ja) * | 1992-11-02 | 2001-12-17 | 株式会社東芝 | 構造体の欠陥修正方法 |
JPH0711429A (ja) * | 1993-06-23 | 1995-01-13 | Toshiba Corp | 金属蒸気発生方法および装置 |
US6353219B1 (en) * | 1994-07-28 | 2002-03-05 | Victor B. Kley | Object inspection and/or modification system and method |
US6042738A (en) * | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
EP1051536B1 (en) * | 1998-02-06 | 2003-07-30 | Richardson Technologies Inc | Method for deposition of three- dimensional object |
US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
JP2004537758A (ja) * | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | 電子ビーム処理 |
JP3626453B2 (ja) * | 2001-12-27 | 2005-03-09 | 株式会社東芝 | フォトマスクの修正方法及び修正装置 |
-
2003
- 2003-08-19 DE DE10338019A patent/DE10338019A1/de not_active Ceased
-
2004
- 2004-08-12 CN CN2004800238828A patent/CN1839349B/zh not_active Expired - Fee Related
- 2004-08-12 AT AT04764051T patent/ATE556355T1/de active
- 2004-08-12 WO PCT/EP2004/009049 patent/WO2005017949A2/en active Search and Examination
- 2004-08-12 JP JP2006523582A patent/JP2007503009A/ja active Pending
- 2004-08-12 KR KR1020067003480A patent/KR101285450B1/ko active IP Right Grant
- 2004-08-12 EP EP04764051A patent/EP1664924B8/en not_active Not-in-force
- 2004-08-18 TW TW093124858A patent/TWI257673B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI620981B (zh) * | 2015-10-26 | 2018-04-11 | Eo科技股份有限公司 | 用於修正光罩的系統與方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1664924B8 (en) | 2012-12-05 |
DE10338019A1 (de) | 2005-03-24 |
JP2007503009A (ja) | 2007-02-15 |
KR101285450B1 (ko) | 2013-07-12 |
CN1839349A (zh) | 2006-09-27 |
EP1664924A2 (en) | 2006-06-07 |
ATE556355T1 (de) | 2012-05-15 |
EP1664924B1 (en) | 2012-05-02 |
TWI257673B (en) | 2006-07-01 |
KR20070033307A (ko) | 2007-03-26 |
WO2005017949A3 (en) | 2005-07-14 |
WO2005017949A2 (en) | 2005-02-24 |
CN1839349B (zh) | 2013-07-31 |
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