TW200507636A - Improved imager light shield - Google Patents

Improved imager light shield

Info

Publication number
TW200507636A
TW200507636A TW093110007A TW93110007A TW200507636A TW 200507636 A TW200507636 A TW 200507636A TW 093110007 A TW093110007 A TW 093110007A TW 93110007 A TW93110007 A TW 93110007A TW 200507636 A TW200507636 A TW 200507636A
Authority
TW
Taiwan
Prior art keywords
light shield
pixel
improved imager
opaque
improved
Prior art date
Application number
TW093110007A
Other languages
English (en)
Other versions
TWI244329B (en
Inventor
Howard E Rhodes
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200507636A publication Critical patent/TW200507636A/zh
Application granted granted Critical
Publication of TWI244329B publication Critical patent/TWI244329B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Endoscopes (AREA)
  • Liquid Crystal (AREA)
TW093110007A 2003-04-10 2004-04-09 Improved image sensor light shield TWI244329B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/410,191 US6812539B1 (en) 2003-04-10 2003-04-10 Imager light shield

Publications (2)

Publication Number Publication Date
TW200507636A true TW200507636A (en) 2005-02-16
TWI244329B TWI244329B (en) 2005-11-21

Family

ID=33130750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110007A TWI244329B (en) 2003-04-10 2004-04-09 Improved image sensor light shield

Country Status (9)

Country Link
US (2) US6812539B1 (zh)
EP (1) EP1616435B1 (zh)
JP (1) JP2006523034A (zh)
KR (1) KR20050122248A (zh)
CN (1) CN1802750B (zh)
AT (1) ATE504944T1 (zh)
DE (1) DE602004032123D1 (zh)
TW (1) TWI244329B (zh)
WO (1) WO2004093439A2 (zh)

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US6879340B1 (en) * 1998-08-19 2005-04-12 Micron Technology Inc. CMOS imager with integrated non-volatile memory
US6969631B2 (en) * 2003-06-16 2005-11-29 Micron Technology, Inc. Method of forming photodiode with self-aligned implants for high quantum efficiency
US7369168B2 (en) * 2003-07-29 2008-05-06 Micron Technology, Inc. Circuit for an active pixel sensor
US7745858B2 (en) * 2003-09-05 2010-06-29 Aptina Imaging Corporation Photodiode with self-aligned implants for high quantum efficiency and method of formation
JP2005217454A (ja) * 2004-01-27 2005-08-11 Sanyo Electric Co Ltd 固体撮像装置
JP2005228997A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US7335963B2 (en) * 2004-08-25 2008-02-26 Micron Technology, Inc. Light block for pixel arrays
US7288788B2 (en) * 2004-12-03 2007-10-30 International Business Machines Corporation Predoped transfer gate for an image sensor
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
JP4643249B2 (ja) * 2004-12-22 2011-03-02 株式会社東芝 固体撮像装置
US7935994B2 (en) * 2005-02-24 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light shield for CMOS imager
KR100642760B1 (ko) * 2005-03-28 2006-11-10 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
JP4785433B2 (ja) 2005-06-10 2011-10-05 キヤノン株式会社 固体撮像装置
KR20070009829A (ko) * 2005-07-14 2007-01-19 동부일렉트로닉스 주식회사 씨모스 이미지 센서
US7683407B2 (en) * 2005-08-01 2010-03-23 Aptina Imaging Corporation Structure and method for building a light tunnel for use with imaging devices
US20070052035A1 (en) * 2005-08-23 2007-03-08 Omnivision Technologies, Inc. Method and apparatus for reducing optical crosstalk in CMOS image sensors
US7633106B2 (en) * 2005-11-09 2009-12-15 International Business Machines Corporation Light shield for CMOS imager
US20070205354A1 (en) * 2006-03-06 2007-09-06 Micron Technology, Inc. Image sensor light shield
WO2008064435A1 (en) * 2006-11-29 2008-06-05 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure having shielded storage node
US8045028B1 (en) 2007-04-23 2011-10-25 On Semiconductor Trading Ltd. Six transistor (6T) pixel architecture
US7531373B2 (en) * 2007-09-19 2009-05-12 Micron Technology, Inc. Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry
JP5385564B2 (ja) * 2008-08-18 2014-01-08 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP5371330B2 (ja) * 2008-08-29 2013-12-18 キヤノン株式会社 固体撮像装置
US8476567B2 (en) * 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
US8059173B2 (en) * 2008-09-26 2011-11-15 On Semiconductor Trading Ltd. Correlated double sampling pixel and method
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JPWO2013001809A1 (ja) 2011-06-30 2015-02-23 パナソニック株式会社 固体撮像装置
JP2014011304A (ja) * 2012-06-29 2014-01-20 Toshiba Corp 固体撮像装置
CN104051488B (zh) * 2013-03-14 2019-06-14 马克西姆综合产品公司 光学传感器
JPWO2015125443A1 (ja) * 2014-02-19 2017-03-30 パナソニックＩｐマネジメント株式会社 受光デバイスおよびその製造方法
GB2529567B (en) 2015-09-22 2016-11-23 X-Fab Semiconductor Foundries Ag Light shield for light sensitive elements
CN109426766A (zh) * 2017-08-23 2019-03-05 上海箩箕技术有限公司 指纹成像模组和电子设备
CN108922905A (zh) * 2018-07-17 2018-11-30 京东方科技集团股份有限公司 一种显示基板及制备方法、显示面板

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JPH06204450A (ja) * 1992-12-28 1994-07-22 Toshiba Corp 固体撮像装置
KR100294026B1 (ko) * 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
JPH0799298A (ja) * 1993-09-28 1995-04-11 Sony Corp 固体撮像素子及びその製造方法
US6133595A (en) * 1997-04-08 2000-10-17 Matsushita Electronics Corporation Solid state imaging device with improved ground adhesion layer
US6057586A (en) * 1997-09-26 2000-05-02 Intel Corporation Method and apparatus for employing a light shield to modulate pixel color responsivity
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KR100278285B1 (ko) * 1998-02-28 2001-01-15 김영환 씨모스 이미지센서 및 그 제조방법
US6278169B1 (en) * 1998-05-07 2001-08-21 Analog Devices, Inc. Image sensor shielding
KR100498595B1 (ko) 1998-06-29 2005-09-20 매그나칩 반도체 유한회사 액티브층에 근접된 광차단막을 갖는 이미지센서
US6326230B1 (en) * 1999-01-06 2001-12-04 California Institute Of Technology High speed CMOS imager with motion artifact supression and anti-blooming
JP3319419B2 (ja) * 1999-02-24 2002-09-03 日本電気株式会社 固体撮像装置
US6198087B1 (en) * 1999-05-03 2001-03-06 Iteris, Inc. CMOS imager with light shield
US6326652B1 (en) * 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6653617B2 (en) * 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
JP2002108248A (ja) * 2000-07-26 2002-04-10 Seiko Epson Corp 電気光学装置、電気光学装置用基板及び投射型表示装置

Also Published As

Publication number Publication date
DE602004032123D1 (de) 2011-05-19
US20040201072A1 (en) 2004-10-14
TWI244329B (en) 2005-11-21
KR20050122248A (ko) 2005-12-28
CN1802750A (zh) 2006-07-12
EP1616435A2 (en) 2006-01-18
US20040222481A1 (en) 2004-11-11
WO2004093439A3 (en) 2005-02-10
ATE504944T1 (de) 2011-04-15
JP2006523034A (ja) 2006-10-05
WO2004093439A2 (en) 2004-10-28
CN1802750B (zh) 2012-04-18
US6812539B1 (en) 2004-11-02
US7390690B2 (en) 2008-06-24
EP1616435B1 (en) 2011-04-06

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