TW200504936A - Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method - Google Patents

Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method

Info

Publication number
TW200504936A
TW200504936A TW093110720A TW93110720A TW200504936A TW 200504936 A TW200504936 A TW 200504936A TW 093110720 A TW093110720 A TW 093110720A TW 93110720 A TW93110720 A TW 93110720A TW 200504936 A TW200504936 A TW 200504936A
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
type channel
channel misfet
Prior art date
Application number
TW093110720A
Other languages
English (en)
Inventor
Satoshi Sakai
Daichi Matsumoto
Katsuyuki Asaka
Masatoshi Hasegawa
Kazutaka Mori
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200504936A publication Critical patent/TW200504936A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
TW093110720A 2003-06-03 2004-04-16 Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method TW200504936A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003157737A JP2004363214A (ja) 2003-06-03 2003-06-03 半導体集積回路装置の製造方法および半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW200504936A true TW200504936A (en) 2005-02-01

Family

ID=33516092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110720A TW200504936A (en) 2003-06-03 2004-04-16 Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method

Country Status (5)

Country Link
US (2) US7109076B2 (zh)
JP (1) JP2004363214A (zh)
KR (1) KR20040104404A (zh)
CN (1) CN1574293A (zh)
TW (1) TW200504936A (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339189A (ja) * 2005-05-31 2006-12-14 Oki Electric Ind Co Ltd 半導体ウェハおよびそれにより形成した半導体装置
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
KR100701697B1 (ko) * 2005-06-29 2007-03-29 주식회사 하이닉스반도체 듀얼 폴리사이드 게이트를 갖는 씨모스 소자의 제조방법
JP2007059473A (ja) * 2005-08-22 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007287959A (ja) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4507119B2 (ja) * 2006-07-20 2010-07-21 エルピーダメモリ株式会社 半導体装置およびその製造方法
US7595262B2 (en) * 2006-10-27 2009-09-29 Qimonda Ag Manufacturing method for an integrated semiconductor structure
JP2008117864A (ja) * 2006-11-01 2008-05-22 Nec Electronics Corp 半導体装置
US7718496B2 (en) * 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
JP2015179727A (ja) * 2014-03-19 2015-10-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその製造方法
JP5917738B2 (ja) * 2015-02-24 2016-05-18 ルネサスエレクトロニクス株式会社 半導体装置および半導体チップ
JP6560541B2 (ja) * 2015-06-08 2019-08-14 ローム株式会社 半導体装置
US9997522B2 (en) 2015-12-03 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a local interconnect in a semiconductor device
KR102320047B1 (ko) 2017-07-05 2021-11-01 삼성전자주식회사 집적회로 소자 및 그 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032911B2 (ja) * 1979-07-26 1985-07-31 株式会社東芝 半導体記憶装置
JPH07161826A (ja) 1993-12-03 1995-06-23 Ricoh Co Ltd 半導体装置の製造方法
JPH09260509A (ja) 1996-03-22 1997-10-03 Sony Corp デュアルゲートおよびその製造方法
JPH1050857A (ja) 1996-08-02 1998-02-20 Sony Corp 半導体装置の製造方法
JPH11195713A (ja) 1998-01-06 1999-07-21 Sony Corp 半導体装置およびその製造方法
JPH11330468A (ja) * 1998-05-20 1999-11-30 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP4149095B2 (ja) * 1999-04-26 2008-09-10 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001024168A (ja) 1999-07-08 2001-01-26 Hitachi Ltd 半導体記憶装置
JP2001210725A (ja) 2000-01-25 2001-08-03 Matsushita Electric Ind Co Ltd 半導体装置
JP2003031684A (ja) * 2001-07-11 2003-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
US20040259306A1 (en) 2004-12-23
CN1574293A (zh) 2005-02-02
US20060275969A1 (en) 2006-12-07
KR20040104404A (ko) 2004-12-10
US7109076B2 (en) 2006-09-19
JP2004363214A (ja) 2004-12-24

Similar Documents

Publication Publication Date Title
TW200504936A (en) Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method
JP2009514233A5 (zh)
JP2001267433A5 (zh)
TW200705641A (en) Initial-on SCR device for on-chip ESD protection
TW200620631A (en) Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode
TW200512882A (en) Method and apparatus for fabricating CMOS field effect transistors
TWI721140B (zh) 半導體裝置以及半導體裝置的製造方法
TW200723410A (en) Method for manufacturing semiconductor device capable of improving breakdown voltage characteristics
JP2006013450A5 (zh)
TW200636868A (en) Manufacturing method of semiconductor device
JP5213520B2 (ja) 半導体装置の製造方法
TWI256669B (en) Semiconductor device and manufacturing method of the same
US20030049907A1 (en) Semiconductor device and manufacturing method therefor
CN101567387B (zh) 双扩散金属氧化物半导体晶体管
TWI644430B (zh) 半導體裝置及其製造方法
TW200614335A (en) Semiconductor device and method of manufacturing the same
KR100898252B1 (ko) 반도체 소자 및 이의 제조방법
TW200701299A (en) Semiconductor device and method for manufacturing the same
KR20020043996A (ko) 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법
CN105336736B (zh) Bcd器件及其制造方法
TWI259556B (en) Novel LDMOS IC technology with low threshold voltage
CN104425359A (zh) 半导体结构的形成方法
KR20110023807A (ko) 반도체 장치의 제조 방법
CN106558557A (zh) 半导体器件的制作方法
JP3710900B2 (ja) 半導体装置