TW200504905A - Semiconductor device and method for making same - Google Patents

Semiconductor device and method for making same

Info

Publication number
TW200504905A
TW200504905A TW093117030A TW93117030A TW200504905A TW 200504905 A TW200504905 A TW 200504905A TW 093117030 A TW093117030 A TW 093117030A TW 93117030 A TW93117030 A TW 93117030A TW 200504905 A TW200504905 A TW 200504905A
Authority
TW
Taiwan
Prior art keywords
electrodes
melting point
low melting
semiconductor device
bump electrodes
Prior art date
Application number
TW093117030A
Other languages
English (en)
Other versions
TWI235442B (en
Inventor
Mitsuo Umemoto
Kazumasa Tanida
Original Assignee
Sanyo Electric Co
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Rohm Co Ltd filed Critical Sanyo Electric Co
Publication of TW200504905A publication Critical patent/TW200504905A/zh
Application granted granted Critical
Publication of TWI235442B publication Critical patent/TWI235442B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
TW093117030A 2003-06-23 2004-06-14 Semiconductor device and method for making same TWI235442B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003177863A JP4263953B2 (ja) 2003-06-23 2003-06-23 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200504905A true TW200504905A (en) 2005-02-01
TWI235442B TWI235442B (en) 2005-07-01

Family

ID=34100149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117030A TWI235442B (en) 2003-06-23 2004-06-14 Semiconductor device and method for making same

Country Status (5)

Country Link
US (2) US7061107B2 (zh)
JP (1) JP4263953B2 (zh)
KR (1) KR100540113B1 (zh)
CN (1) CN100411127C (zh)
TW (1) TWI235442B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG134187A1 (en) * 2006-01-13 2007-08-29 Tezzaron Semiconductor S Pte L Stacked wafer for 3d integration
SE1050461A1 (sv) 2006-02-01 2010-05-10 Silex Microsystems Ab Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar
JP2009055004A (ja) * 2007-08-24 2009-03-12 Honda Motor Co Ltd 貫通配線構造
US7821107B2 (en) 2008-04-22 2010-10-26 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
US8631247B2 (en) * 2008-11-24 2014-01-14 Certicom Corp. System and method for hardware based security
JP5522377B2 (ja) * 2009-03-05 2014-06-18 Ｔｄｋ株式会社 貫通電極の形成方法、及び半導体基板
TWI527178B (zh) * 2010-12-15 2016-03-21 史達晶片有限公司 在無焊料遮罩的回焊期間的導電凸塊材料的自我局限的半導體裝置和方法
KR20120067525A (ko) 2010-12-16 2012-06-26 삼성전자주식회사 반도체 소자 및 이의 제조 방법
JP5751131B2 (ja) * 2011-10-28 2015-07-22 富士通株式会社 半導体装置及びその製造方法
MX2016011228A (es) 2014-02-28 2016-11-30 Astellas Pharma Inc Anticuerpos biespecificos novedosos de union a tlr2 humano y tlr4 humano.
JP7353748B2 (ja) * 2018-11-29 2023-10-02 キヤノン株式会社 半導体装置の製造方法および半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same
US3648131A (en) * 1969-11-07 1972-03-07 Ibm Hourglass-shaped conductive connection through semiconductor structures
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor
JP3519453B2 (ja) * 1994-06-20 2004-04-12 富士通株式会社 半導体装置
JPH1012688A (ja) * 1996-06-20 1998-01-16 Matsushita Electric Works Ltd 半導体チップの検査方法
JP2924830B2 (ja) * 1996-11-15 1999-07-26 日本電気株式会社 半導体装置及びその製造方法
EP1025587A4 (en) * 1997-07-21 2000-10-04 Aguila Technologies Inc SEMICONDUCTOR FLIPCHIP PACK AND PRODUCTION METHOD THEREFOR
JP4609617B2 (ja) * 2000-08-01 2011-01-12 日本電気株式会社 半導体装置の実装方法及び実装構造体
US6507115B2 (en) * 2000-12-14 2003-01-14 International Business Machines Corporation Multi-chip integrated circuit module
JP4409455B2 (ja) * 2005-01-31 2010-02-03 株式会社ルネサステクノロジ 半導体装置の製造方法
US7535105B2 (en) * 2005-08-02 2009-05-19 International Business Machines Corporation Inter-chip ESD protection structure for high speed and high frequency devices

Also Published As

Publication number Publication date
JP2005019431A (ja) 2005-01-20
US20050023675A1 (en) 2005-02-03
KR100540113B1 (ko) 2006-01-11
CN1574264A (zh) 2005-02-02
US7061107B2 (en) 2006-06-13
US7306972B2 (en) 2007-12-11
US20060131741A1 (en) 2006-06-22
KR20050000338A (ko) 2005-01-03
JP4263953B2 (ja) 2009-05-13
CN100411127C (zh) 2008-08-13
TWI235442B (en) 2005-07-01

Similar Documents

Publication Publication Date Title
SG99937A1 (en) An electronic device and a method of manufacturing the same
US9082868B2 (en) Semiconductor component and method of manufacture
US10424534B2 (en) Semiconductor device including a clip
DE502004005445D1 (de) Multichip-Schaltungsmodul und Verfahren zur Herstellung hierzu
CN205264696U (zh) 半导体装置
TW200509331A (en) Semiconductor chip package and method for making the same
TW200735300A (en) Interconnected IC packages with vertical SMT pads
TW200721421A (en) Semiconductor structure and method of assembly
TW200618200A (en) Semiconductor device and method for making the same
CN103035601A (zh) 在烧结银层上包括扩散焊接层的半导体器件
EP0997942A3 (en) Chip Size Semiconductor Package and process for producing it
TW200742249A (en) Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
TW200504905A (en) Semiconductor device and method for making same
TW200509349A (en) Integrated circuit with embedded passive component in flip-chip connection and method for manufacturing the same
EP1347513A3 (en) Low voltage drop and high thermal performance ball grid array package
TW200514494A (en) A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
KR20070109838A (ko) 파워 반도체 모듈
SG136004A1 (en) Semiconductor constructions having interconnect structures, methods of forming interconnect structures, and methods of forming semiconductor constructions
TW200731433A (en) Semiconductor device and manufacturing method for the same
TW200730050A (en) Wiring board and method for manufacturing the same, and semiconductor device
US8963303B2 (en) Power electronic device
TW200644138A (en) Semiconductor device and method for manufacturing same
US10026684B2 (en) IC package
TW200729368A (en) Method of manufacturing electronic circuit device
US10950509B2 (en) Semiconductor device with integrated shunt resistor