TW200415217A - Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device - Google Patents

Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device Download PDF

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Publication number
TW200415217A
TW200415217A TW092131710A TW92131710A TW200415217A TW 200415217 A TW200415217 A TW 200415217A TW 092131710 A TW092131710 A TW 092131710A TW 92131710 A TW92131710 A TW 92131710A TW 200415217 A TW200415217 A TW 200415217A
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TW
Taiwan
Prior art keywords
porous film
film
composition
forming
zeolite
Prior art date
Application number
TW092131710A
Other languages
English (en)
Chinese (zh)
Inventor
Tsutomu Ogihara
Fujio Yagihashi
Hideo Nakagawa
Masaru Sasago
Original Assignee
Shinetsu Chemical Co
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co, Matsushita Electric Industrial Co Ltd filed Critical Shinetsu Chemical Co
Publication of TW200415217A publication Critical patent/TW200415217A/zh

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Classifications

    • H10P14/6922—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B39/00—Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
    • C01B39/02—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof
    • C01B39/04—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof using at least one organic template directing agent, e.g. an ionic quaternary ammonium compound or an aminated compound
    • H10P14/6342—
    • H10P14/665—
    • H10P14/6686—

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
TW092131710A 2002-11-13 2003-11-12 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device TW200415217A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002329129A JP4170735B2 (ja) 2002-11-13 2002-11-13 ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Publications (1)

Publication Number Publication Date
TW200415217A true TW200415217A (en) 2004-08-16

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TW092131710A TW200415217A (en) 2002-11-13 2003-11-12 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Country Status (4)

Country Link
US (2) US7244657B2 (enExample)
JP (1) JP4170735B2 (enExample)
CN (1) CN100567150C (enExample)
TW (1) TW200415217A (enExample)

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Also Published As

Publication number Publication date
JP2004161535A (ja) 2004-06-10
JP4170735B2 (ja) 2008-10-22
US20040091419A1 (en) 2004-05-13
US7405459B2 (en) 2008-07-29
US20070108593A1 (en) 2007-05-17
CN1519197A (zh) 2004-08-11
CN100567150C (zh) 2009-12-09
US7244657B2 (en) 2007-07-17

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