JP4170735B2 - ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 - Google Patents

ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 Download PDF

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JP4170735B2
JP4170735B2 JP2002329129A JP2002329129A JP4170735B2 JP 4170735 B2 JP4170735 B2 JP 4170735B2 JP 2002329129 A JP2002329129 A JP 2002329129A JP 2002329129 A JP2002329129 A JP 2002329129A JP 4170735 B2 JP4170735 B2 JP 4170735B2
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Prior art keywords
porous film
group
composition
film
zeolite
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JP2002329129A
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JP2004161535A5 (enExample
JP2004161535A (ja
Inventor
勤 荻原
不二夫 八木橋
秀夫 中川
勝 笹子
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Shin Etsu Chemical Co Ltd
Panasonic Corp
Panasonic Holdings Corp
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Shin Etsu Chemical Co Ltd
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2002329129A priority Critical patent/JP4170735B2/ja
Priority to US10/703,854 priority patent/US7244657B2/en
Priority to TW092131710A priority patent/TW200415217A/zh
Priority to CNB200310114941XA priority patent/CN100567150C/zh
Publication of JP2004161535A publication Critical patent/JP2004161535A/ja
Publication of JP2004161535A5 publication Critical patent/JP2004161535A5/ja
Priority to US11/652,297 priority patent/US7405459B2/en
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    • H10P14/6922—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B39/00—Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
    • C01B39/02—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof
    • C01B39/04—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof using at least one organic template directing agent, e.g. an ionic quaternary ammonium compound or an aminated compound
    • H10P14/6342—
    • H10P14/665—
    • H10P14/6686—

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
JP2002329129A 2002-11-13 2002-11-13 ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 Expired - Fee Related JP4170735B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002329129A JP4170735B2 (ja) 2002-11-13 2002-11-13 ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
US10/703,854 US7244657B2 (en) 2002-11-13 2003-11-07 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
TW092131710A TW200415217A (en) 2002-11-13 2003-11-12 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
CNB200310114941XA CN100567150C (zh) 2002-11-13 2003-11-13 沸石溶胶及其制法、多孔膜形成用组合物、多孔膜及其制法、层间绝缘膜和半导体装置
US11/652,297 US7405459B2 (en) 2002-11-13 2007-01-11 Semiconductor device comprising porous film

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JP2002329129A JP4170735B2 (ja) 2002-11-13 2002-11-13 ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

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JP2004161535A5 JP2004161535A5 (enExample) 2006-10-26
JP4170735B2 true JP4170735B2 (ja) 2008-10-22

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US (2) US7244657B2 (enExample)
JP (1) JP4170735B2 (enExample)
CN (1) CN100567150C (enExample)
TW (1) TW200415217A (enExample)

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JP2008201833A (ja) 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置
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KR101610180B1 (ko) * 2007-11-21 2016-04-07 캐논 나노테크놀로지즈 인코퍼레이티드 나노-임프린트 리소그래피용 다공성 주형 및 임프린팅 스택
JP2009286935A (ja) * 2008-05-30 2009-12-10 Shin-Etsu Chemical Co Ltd 有機酸化ケイ素微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
JP5096233B2 (ja) 2008-05-30 2012-12-12 信越化学工業株式会社 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
JP4883323B2 (ja) * 2008-08-26 2012-02-22 信越化学工業株式会社 非水電解質二次電池負極材及びＳｉ−Ｏ−Ａｌ複合体の製造方法、ならびに非水電解質二次電池負極及び非水電解質二次電池
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US8616873B2 (en) * 2010-01-26 2013-12-31 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
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JP2004161535A (ja) 2004-06-10
US20040091419A1 (en) 2004-05-13
US7405459B2 (en) 2008-07-29
US20070108593A1 (en) 2007-05-17
TW200415217A (en) 2004-08-16
CN1519197A (zh) 2004-08-11
CN100567150C (zh) 2009-12-09
US7244657B2 (en) 2007-07-17

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