CN100567150C - 沸石溶胶及其制法、多孔膜形成用组合物、多孔膜及其制法、层间绝缘膜和半导体装置 - Google Patents

沸石溶胶及其制法、多孔膜形成用组合物、多孔膜及其制法、层间绝缘膜和半导体装置 Download PDF

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Publication number
CN100567150C
CN100567150C CNB200310114941XA CN200310114941A CN100567150C CN 100567150 C CN100567150 C CN 100567150C CN B200310114941X A CNB200310114941X A CN B200310114941XA CN 200310114941 A CN200310114941 A CN 200310114941A CN 100567150 C CN100567150 C CN 100567150C
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China
Prior art keywords
film
porous
zeolite
composition
porous film
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Expired - Fee Related
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CNB200310114941XA
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English (en)
Chinese (zh)
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CN1519197A (zh
Inventor
荻原勤
八木桥不二夫
中川秀夫
笹子胜
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Shin Etsu Chemical Co Ltd
Panasonic Holdings Corp
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Shin Etsu Chemical Co Ltd
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B39/00—Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
    • C01B39/02—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof
    • C01B39/04—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof using at least one organic template directing agent, e.g. an ionic quaternary ammonium compound or an aminated compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
CNB200310114941XA 2002-11-13 2003-11-13 沸石溶胶及其制法、多孔膜形成用组合物、多孔膜及其制法、层间绝缘膜和半导体装置 Expired - Fee Related CN100567150C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002329129A JP4170735B2 (ja) 2002-11-13 2002-11-13 ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
JP329129/2002 2002-11-13

Publications (2)

Publication Number Publication Date
CN1519197A CN1519197A (zh) 2004-08-11
CN100567150C true CN100567150C (zh) 2009-12-09

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CNB200310114941XA Expired - Fee Related CN100567150C (zh) 2002-11-13 2003-11-13 沸石溶胶及其制法、多孔膜形成用组合物、多孔膜及其制法、层间绝缘膜和半导体装置

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US (2) US7244657B2 (enExample)
JP (1) JP4170735B2 (enExample)
CN (1) CN100567150C (enExample)
TW (1) TW200415217A (enExample)

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JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
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JP5096233B2 (ja) 2008-05-30 2012-12-12 信越化学工業株式会社 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
JP2009286935A (ja) * 2008-05-30 2009-12-10 Shin-Etsu Chemical Co Ltd 有機酸化ケイ素微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
JP4883323B2 (ja) * 2008-08-26 2012-02-22 信越化学工業株式会社 非水電解質二次電池負極材及びＳｉ−Ｏ−Ａｌ複合体の製造方法、ならびに非水電解質二次電池負極及び非水電解質二次電池
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TW200415217A (en) 2004-08-16
JP2004161535A (ja) 2004-06-10
US20040091419A1 (en) 2004-05-13
US20070108593A1 (en) 2007-05-17
JP4170735B2 (ja) 2008-10-22
US7244657B2 (en) 2007-07-17
CN1519197A (zh) 2004-08-11
US7405459B2 (en) 2008-07-29

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