TW200402068A - Adjustable current mode differential amplifier - Google Patents
Adjustable current mode differential amplifier Download PDFInfo
- Publication number
- TW200402068A TW200402068A TW092103303A TW92103303A TW200402068A TW 200402068 A TW200402068 A TW 200402068A TW 092103303 A TW092103303 A TW 092103303A TW 92103303 A TW92103303 A TW 92103303A TW 200402068 A TW200402068 A TW 200402068A
- Authority
- TW
- Taiwan
- Prior art keywords
- cell
- memory cell
- voltage
- memory
- parameter
- Prior art date
Links
- 230000015654 memory Effects 0.000 claims abstract description 192
- 238000000034 method Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000004880 explosion Methods 0.000 claims 1
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000005291 magnetic effect Effects 0.000 description 30
- 230000008859 change Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002535 lyotropic effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003359 percent control normalization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/198,278 US6590804B1 (en) | 2002-07-16 | 2002-07-16 | Adjustable current mode differential amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200402068A true TW200402068A (en) | 2004-02-01 |
Family
ID=22732698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092103303A TW200402068A (en) | 2002-07-16 | 2003-02-18 | Adjustable current mode differential amplifier |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6590804B1 (https=) |
| EP (1) | EP1383132A1 (https=) |
| JP (1) | JP3965373B2 (https=) |
| CN (1) | CN100481249C (https=) |
| TW (1) | TW200402068A (https=) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6577525B2 (en) * | 2001-08-28 | 2003-06-10 | Micron Technology, Inc. | Sensing method and apparatus for resistance memory device |
| US6650562B2 (en) * | 2002-01-23 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device |
| US6674679B1 (en) * | 2002-10-01 | 2004-01-06 | Hewlett-Packard Development Company, L.P. | Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation |
| US6891768B2 (en) * | 2002-11-13 | 2005-05-10 | Hewlett-Packard Development Company, L.P. | Power-saving reading of magnetic memory devices |
| JP2004164766A (ja) * | 2002-11-14 | 2004-06-10 | Renesas Technology Corp | 不揮発性記憶装置 |
| US6781906B2 (en) * | 2002-11-19 | 2004-08-24 | Hewlett-Packard Development Company, L.P. | Memory cell sensing integrator |
| TWI223259B (en) * | 2003-01-07 | 2004-11-01 | Ind Tech Res Inst | A reference mid-point current generator for a magnetic random access memory |
| FR2853444B1 (fr) * | 2003-04-02 | 2005-07-15 | St Microelectronics Sa | Amplificateur de lecture a double etage de lecture |
| US7027318B2 (en) * | 2003-05-30 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Method and system for adjusting offset voltage |
| EP1484764B1 (en) * | 2003-06-04 | 2006-08-16 | STMicroelectronics S.r.l. | Method for generating a reference current for sense amplifiers connected to cells of a memory matrix, particularly in big-sized flash memories, and corresponding generator |
| US6839280B1 (en) * | 2003-06-27 | 2005-01-04 | Freescale Semiconductor, Inc. | Variable gate bias for a reference transistor in a non-volatile memory |
| US7126844B2 (en) * | 2003-11-30 | 2006-10-24 | Union Semiconductor Technology Corporation | Apparatus to improve stability of an MRAM over process and operational variations |
| US7082050B2 (en) * | 2003-11-30 | 2006-07-25 | Union Semiconductor Technology Corporation | Method to equalize word current circuitry |
| US7054185B2 (en) * | 2003-11-30 | 2006-05-30 | Union Semiconductor Technology Corporation | Optimized MRAM current sources |
| US7113422B2 (en) | 2003-11-30 | 2006-09-26 | Union Semiconductor Technology Corporation | Method for optimizing MRAM circuit performance |
| US7023753B2 (en) * | 2003-11-30 | 2006-04-04 | Union Semiconductor Technology Corporation | Current controlled word and sense source |
| US6862206B1 (en) * | 2003-12-19 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Memory module hybridizing an atomic resolution storage (ARS) memory and a magnetic memory |
| US7091740B2 (en) * | 2004-07-30 | 2006-08-15 | Microchip Technology Incorporated | Write protection using a two signal control protocol for an integrated circuit device having parameter change capability, chip select and selectable write to non-volatile memory |
| US7130235B2 (en) * | 2004-09-03 | 2006-10-31 | Hewlett-Packard Development Company, L.P. | Method and apparatus for a sense amplifier |
| US7333383B2 (en) * | 2005-08-23 | 2008-02-19 | Infineon Technologies Ag | Fuse resistance read-out circuit |
| KR100735754B1 (ko) | 2006-02-03 | 2007-07-06 | 삼성전자주식회사 | 센스 앰프 플립 플롭 |
| US8395199B2 (en) | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
| US7649793B1 (en) | 2006-05-04 | 2010-01-19 | Marvell International Ltd. | Channel estimation for multi-level memories using pilot signals |
| US8645793B2 (en) * | 2008-06-03 | 2014-02-04 | Marvell International Ltd. | Statistical tracking for flash memory |
| US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
| US7307911B1 (en) * | 2006-07-27 | 2007-12-11 | International Business Machines Corporation | Apparatus and method for improving sensing margin of electrically programmable fuses |
| US20090126129A1 (en) * | 2007-03-21 | 2009-05-21 | D Agostino Michael J | Precast Arch-Shaped Overfilled Structure |
| US7808834B1 (en) | 2007-04-13 | 2010-10-05 | Marvell International Ltd. | Incremental memory refresh |
| TWI336079B (en) * | 2007-07-02 | 2011-01-11 | Ind Tech Res Inst | Magnetic random access memory and data reading circuit therefor |
| US8031526B1 (en) | 2007-08-23 | 2011-10-04 | Marvell International Ltd. | Write pre-compensation for nonvolatile memory |
| US8189381B1 (en) | 2007-08-28 | 2012-05-29 | Marvell International Ltd. | System and method for reading flash memory cells |
| US8085605B2 (en) | 2007-08-29 | 2011-12-27 | Marvell World Trade Ltd. | Sequence detection for flash memory with inter-cell interference |
| US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
| JP5596296B2 (ja) * | 2008-03-17 | 2014-09-24 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
| US7719884B2 (en) * | 2008-05-19 | 2010-05-18 | Qimonda Ag | Integrated circuit, cell arrangement, method of manufacturing an integrated circuit, method of operating an integrated circuit, and memory module |
| JP5529450B2 (ja) * | 2009-07-15 | 2014-06-25 | スパンション エルエルシー | ボディバイアス制御回路及びボディバイアス制御方法 |
| CN102467967B (zh) * | 2010-11-12 | 2015-05-20 | 上海复旦微电子集团股份有限公司 | 用于电可擦写只读存储器的读出电路和读出方法 |
| GB2487723A (en) * | 2011-01-26 | 2012-08-08 | Nds Ltd | Protection device for stored data values comprising a switching circuit |
| US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
| US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
| US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
| US9720054B2 (en) * | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
| WO2016068980A1 (en) | 2014-10-31 | 2016-05-06 | Hewlett Packard Enterprise Development Lp | Sensing circuit for resistive memory |
| US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
| KR102354350B1 (ko) | 2015-05-18 | 2022-01-21 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| CN105049007B (zh) * | 2015-06-19 | 2019-05-14 | 西安紫光国芯半导体有限公司 | 高精度抗干扰比较器及方法和应用该比较器的存储结构 |
| US9728253B2 (en) * | 2015-11-30 | 2017-08-08 | Windbond Electronics Corp. | Sense circuit for RRAM |
| WO2017176217A1 (en) * | 2016-04-07 | 2017-10-12 | Agency For Science, Technology And Research | Circuit arrangement, memory column, memory array, and method of forming the same |
| US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
| US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
| CN109410997B (zh) * | 2017-08-16 | 2021-04-30 | 华邦电子股份有限公司 | 电阻式存储器存储装置及其写入方法 |
| CN110111821A (zh) * | 2018-02-01 | 2019-08-09 | 上海磁宇信息科技有限公司 | 一种使用分布式参考单元的磁性随机存储器 |
| US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
| US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
| US11309005B2 (en) * | 2018-10-31 | 2022-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Current steering in reading magnetic tunnel junction |
| US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
| US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
| US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
| US11574678B2 (en) * | 2020-09-17 | 2023-02-07 | Fujitsu Semiconductor Memory Solution Limited | Resistive random access memory, and method for manufacturing resistive random access memory |
| CN112579002B (zh) * | 2020-12-14 | 2024-02-13 | 北京北大众志微系统科技有限责任公司 | 一种在位线结构中设置有传输门的sram及存取提升方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2694119B1 (fr) * | 1992-07-24 | 1994-08-26 | Sgs Thomson Microelectronics | Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture. |
| JP2800740B2 (ja) * | 1995-09-28 | 1998-09-21 | 日本電気株式会社 | 半導体記憶装置 |
| US6262625B1 (en) | 1999-10-29 | 2001-07-17 | Hewlett-Packard Co | Operational amplifier with digital offset calibration |
| US6169686B1 (en) | 1997-11-20 | 2001-01-02 | Hewlett-Packard Company | Solid-state memory with magnetic storage cells |
| FR2801719B1 (fr) * | 1999-11-30 | 2002-03-01 | St Microelectronics Sa | Dispositif de lecture pour memoire en circuit integre |
| US6191989B1 (en) * | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| JP3920565B2 (ja) * | 2000-12-26 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| TW520501B (en) * | 2000-12-29 | 2003-02-11 | Amic Technology Taiwan Inc | Bias device for a magneto-resistive random access memory |
| US6501697B1 (en) * | 2001-10-11 | 2002-12-31 | Hewlett-Packard Company | High density memory sense amplifier |
-
2002
- 2002-07-16 US US10/198,278 patent/US6590804B1/en not_active Expired - Lifetime
-
2003
- 2003-02-18 TW TW092103303A patent/TW200402068A/zh unknown
- 2003-05-16 CN CNB031238203A patent/CN100481249C/zh not_active Expired - Lifetime
- 2003-07-09 JP JP2003272462A patent/JP3965373B2/ja not_active Expired - Fee Related
- 2003-07-15 EP EP03254450A patent/EP1383132A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP1383132A1 (en) | 2004-01-21 |
| JP2004039231A (ja) | 2004-02-05 |
| JP3965373B2 (ja) | 2007-08-29 |
| CN1501401A (zh) | 2004-06-02 |
| US6590804B1 (en) | 2003-07-08 |
| CN100481249C (zh) | 2009-04-22 |
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