CN100481249C - 确定存储器单元的逻辑状态的检测电路和方法 - Google Patents

确定存储器单元的逻辑状态的检测电路和方法 Download PDF

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Publication number
CN100481249C
CN100481249C CNB031238203A CN03123820A CN100481249C CN 100481249 C CN100481249 C CN 100481249C CN B031238203 A CNB031238203 A CN B031238203A CN 03123820 A CN03123820 A CN 03123820A CN 100481249 C CN100481249 C CN 100481249C
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China
Prior art keywords
memory cell
cell
voltage
reference cell
memory
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Expired - Lifetime
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CNB031238203A
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Chinese (zh)
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CN1501401A (zh
Inventor
F·A·佩尔纳
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CNB031238203A 2002-07-16 2003-05-16 确定存储器单元的逻辑状态的检测电路和方法 Expired - Lifetime CN100481249C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/198,278 US6590804B1 (en) 2002-07-16 2002-07-16 Adjustable current mode differential amplifier
US10/198278 2002-07-16

Publications (2)

Publication Number Publication Date
CN1501401A CN1501401A (zh) 2004-06-02
CN100481249C true CN100481249C (zh) 2009-04-22

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CNB031238203A Expired - Lifetime CN100481249C (zh) 2002-07-16 2003-05-16 确定存储器单元的逻辑状态的检测电路和方法

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Country Link
US (1) US6590804B1 (https=)
EP (1) EP1383132A1 (https=)
JP (1) JP3965373B2 (https=)
CN (1) CN100481249C (https=)
TW (1) TW200402068A (https=)

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US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
JP5596296B2 (ja) * 2008-03-17 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US7719884B2 (en) * 2008-05-19 2010-05-18 Qimonda Ag Integrated circuit, cell arrangement, method of manufacturing an integrated circuit, method of operating an integrated circuit, and memory module
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
CN102467967B (zh) * 2010-11-12 2015-05-20 上海复旦微电子集团股份有限公司 用于电可擦写只读存储器的读出电路和读出方法
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KR102354350B1 (ko) 2015-05-18 2022-01-21 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
CN105049007B (zh) * 2015-06-19 2019-05-14 西安紫光国芯半导体有限公司 高精度抗干扰比较器及方法和应用该比较器的存储结构
US9728253B2 (en) * 2015-11-30 2017-08-08 Windbond Electronics Corp. Sense circuit for RRAM
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US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
CN109410997B (zh) * 2017-08-16 2021-04-30 华邦电子股份有限公司 电阻式存储器存储装置及其写入方法
CN110111821A (zh) * 2018-02-01 2019-08-09 上海磁宇信息科技有限公司 一种使用分布式参考单元的磁性随机存储器
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
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Also Published As

Publication number Publication date
EP1383132A1 (en) 2004-01-21
JP2004039231A (ja) 2004-02-05
TW200402068A (en) 2004-02-01
JP3965373B2 (ja) 2007-08-29
CN1501401A (zh) 2004-06-02
US6590804B1 (en) 2003-07-08

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