JP3965373B2 - 可調整電流モード差動増幅器 - Google Patents

可調整電流モード差動増幅器 Download PDF

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Publication number
JP3965373B2
JP3965373B2 JP2003272462A JP2003272462A JP3965373B2 JP 3965373 B2 JP3965373 B2 JP 3965373B2 JP 2003272462 A JP2003272462 A JP 2003272462A JP 2003272462 A JP2003272462 A JP 2003272462A JP 3965373 B2 JP3965373 B2 JP 3965373B2
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Japan
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memory cell
transistor
cell
voltage
output level
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JP2003272462A
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Japanese (ja)
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JP2004039231A5 (https=
JP2004039231A (ja
Inventor
フレデリック・エイ・パーナー
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Hewlett Packard Development Co LP
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Hewlett Packard Development Co LP
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2003272462A 2002-07-16 2003-07-09 可調整電流モード差動増幅器 Expired - Fee Related JP3965373B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/198,278 US6590804B1 (en) 2002-07-16 2002-07-16 Adjustable current mode differential amplifier

Publications (3)

Publication Number Publication Date
JP2004039231A JP2004039231A (ja) 2004-02-05
JP2004039231A5 JP2004039231A5 (https=) 2005-05-26
JP3965373B2 true JP3965373B2 (ja) 2007-08-29

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JP2003272462A Expired - Fee Related JP3965373B2 (ja) 2002-07-16 2003-07-09 可調整電流モード差動増幅器

Country Status (5)

Country Link
US (1) US6590804B1 (https=)
EP (1) EP1383132A1 (https=)
JP (1) JP3965373B2 (https=)
CN (1) CN100481249C (https=)
TW (1) TW200402068A (https=)

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US20090126129A1 (en) * 2007-03-21 2009-05-21 D Agostino Michael J Precast Arch-Shaped Overfilled Structure
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US8031526B1 (en) 2007-08-23 2011-10-04 Marvell International Ltd. Write pre-compensation for nonvolatile memory
US8189381B1 (en) 2007-08-28 2012-05-29 Marvell International Ltd. System and method for reading flash memory cells
US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
JP5596296B2 (ja) * 2008-03-17 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US7719884B2 (en) * 2008-05-19 2010-05-18 Qimonda Ag Integrated circuit, cell arrangement, method of manufacturing an integrated circuit, method of operating an integrated circuit, and memory module
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
CN102467967B (zh) * 2010-11-12 2015-05-20 上海复旦微电子集团股份有限公司 用于电可擦写只读存储器的读出电路和读出方法
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US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US9720054B2 (en) * 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
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US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
KR102354350B1 (ko) 2015-05-18 2022-01-21 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
CN105049007B (zh) * 2015-06-19 2019-05-14 西安紫光国芯半导体有限公司 高精度抗干扰比较器及方法和应用该比较器的存储结构
US9728253B2 (en) * 2015-11-30 2017-08-08 Windbond Electronics Corp. Sense circuit for RRAM
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US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
CN109410997B (zh) * 2017-08-16 2021-04-30 华邦电子股份有限公司 电阻式存储器存储装置及其写入方法
CN110111821A (zh) * 2018-02-01 2019-08-09 上海磁宇信息科技有限公司 一种使用分布式参考单元的磁性随机存储器
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
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US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
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CN112579002B (zh) * 2020-12-14 2024-02-13 北京北大众志微系统科技有限责任公司 一种在位线结构中设置有传输门的sram及存取提升方法

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Also Published As

Publication number Publication date
EP1383132A1 (en) 2004-01-21
JP2004039231A (ja) 2004-02-05
TW200402068A (en) 2004-02-01
CN1501401A (zh) 2004-06-02
US6590804B1 (en) 2003-07-08
CN100481249C (zh) 2009-04-22

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