TR201820226T4 - İyonla dağlanmış yüzeye sahip iş parçalarının üretimine yönelik yöntem. - Google Patents

İyonla dağlanmış yüzeye sahip iş parçalarının üretimine yönelik yöntem. Download PDF

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Publication number
TR201820226T4
TR201820226T4 TR2018/20226T TR201820226T TR201820226T4 TR 201820226 T4 TR201820226 T4 TR 201820226T4 TR 2018/20226 T TR2018/20226 T TR 2018/20226T TR 201820226 T TR201820226 T TR 201820226T TR 201820226 T4 TR201820226 T4 TR 201820226T4
Authority
TR
Turkey
Prior art keywords
cloud
workpieces
planetary carriers
planetary
ion
Prior art date
Application number
TR2018/20226T
Other languages
English (en)
Inventor
Krassnitzer Siegfried
Gstoehl Oliver
Esselbach Markus
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of TR201820226T4 publication Critical patent/TR201820226T4/tr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Bir karosele (19) monte edilen iş parçalarının planet taşıyıcıları (22), bir vakum haznesi içerisinde sağlanmaktadır. İyonları içeren bir bulutun (CL) bir kaynağı (24), bulutun bir merkez ekseninin (ACL), karoselin (19) döner ekseni (A20) ile kesişmesi için sağlanmaktadır. Bulut (CL), en fazla planet taşıyıcıların (22) çapının yarısı olan, hedeflenen merkez eksenden (ACL) bir mesafede maksimum iyon yoğunluğunun%50'sine düşen planet eksenlerin (A22) hareketli yolunda (T) bir iyon yoğunluğu profiline sahiptir. Planet taşıyıcılar (22) üzerinde iş parçaları, iyonları içeren bulut ile dağlandığında, dağlanan malzeme, bitişik planet taşıyıcılarda büyük ölçüde yeniden biriktirilmemektedir, fakat daha ziyade vakum haznesinin duvarına doğru çıkarılmaktadır.
TR2018/20226T 2008-04-22 2009-04-15 İyonla dağlanmış yüzeye sahip iş parçalarının üretimine yönelik yöntem. TR201820226T4 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4687708P 2008-04-22 2008-04-22

Publications (1)

Publication Number Publication Date
TR201820226T4 true TR201820226T4 (tr) 2019-01-21

Family

ID=40941643

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2018/20226T TR201820226T4 (tr) 2008-04-22 2009-04-15 İyonla dağlanmış yüzeye sahip iş parçalarının üretimine yönelik yöntem.

Country Status (17)

Country Link
US (1) US8864959B2 (tr)
EP (1) EP2274763B1 (tr)
JP (1) JP5490098B2 (tr)
KR (1) KR101558018B1 (tr)
CN (1) CN102017055B (tr)
AU (1) AU2009240083B2 (tr)
BR (1) BRPI0910613B1 (tr)
CA (1) CA2721249C (tr)
ES (1) ES2703385T3 (tr)
MX (1) MX2010011590A (tr)
PL (1) PL2274763T3 (tr)
RU (1) RU2504860C2 (tr)
SG (1) SG188799A1 (tr)
SI (1) SI2274763T1 (tr)
TR (1) TR201820226T4 (tr)
TW (1) TWI449077B (tr)
WO (1) WO2009130148A1 (tr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560432B (zh) * 2010-12-13 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种基片承载装置及应用该装置的基片处理设备
AT510606B1 (de) * 2011-02-09 2012-05-15 Leica Mikrosysteme Gmbh Vorrichtung und verfahren zur probenpräparation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724205B2 (ja) * 1986-10-08 1995-03-15 株式会社日立製作所 イオンビ−ムの加工装置
JPH02159389A (ja) * 1988-12-14 1990-06-19 Hitachi Ltd 自公転ホルダ、及びこれを備えたイオンビーム加工機
DE3920772A1 (de) 1989-06-24 1991-01-03 Leyendecker Toni Geraet zur beschichtung von substraten durch kathodenzerstaeubung
DE4125365C1 (tr) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
DE29615190U1 (de) * 1996-03-11 1996-11-28 Balzers Verschleissschutz GmbH, 55411 Bingen Anlage zur Beschichtung von Werkstücken
DE69706983T2 (de) * 1996-05-31 2002-05-29 Ipec Precision, Inc.(N.D.Ges.D.Staates Delaware) Anlage zum behandeln von substraten mit einem plasmastrahl
DE19725930C2 (de) * 1997-06-16 2002-07-18 Eberhard Moll Gmbh Dr Verfahren und Anlage zum Behandeln von Substraten mittels Ionen aus einer Niedervoltbogenentladung
EP1078110B1 (de) * 1998-04-29 2002-11-27 Unaxis Trading AG Werkzeug oder maschinenbauteil und verfahren zu dessen herstellung sowie vakuumbehandlungsanlage
JP2000057986A (ja) * 1998-08-10 2000-02-25 Hitachi Ltd イオンビーム加工装置
RU2161662C2 (ru) * 1999-03-29 2001-01-10 Слепцов Владимир Владимирович Способ обработки поверхности твердого тела
US6236163B1 (en) * 1999-10-18 2001-05-22 Yuri Maishev Multiple-beam ion-beam assembly
DE50115410D1 (de) * 2000-09-05 2010-05-12 Oerlikon Trading Ag Vakuumanlage mit koppelbarem Werkstückträger
JP2002212724A (ja) * 2001-01-19 2002-07-31 Hitachi Ltd イオンビームスパッタ装置
KR20040111096A (ko) * 2003-06-20 2004-12-31 마츠시타 덴끼 산교 가부시키가이샤 고압방전램프의 점등방법 및 점등장치, 고압방전램프장치및 투사형 화상표시장치
US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
JP4693002B2 (ja) * 2005-10-17 2011-06-01 株式会社神戸製鋼所 アークイオンプレーティング装置
US20070209932A1 (en) * 2006-03-10 2007-09-13 Veeco Instruments Inc. Sputter deposition system and methods of use
TW200807522A (en) * 2006-07-07 2008-02-01 Accretech Usa Inc Wafer processing apparatus and method

Also Published As

Publication number Publication date
EP2274763B1 (en) 2018-10-03
TW201005786A (en) 2010-02-01
JP2011524602A (ja) 2011-09-01
MX2010011590A (es) 2011-05-25
CN102017055A (zh) 2011-04-13
JP5490098B2 (ja) 2014-05-14
WO2009130148A1 (en) 2009-10-29
RU2504860C2 (ru) 2014-01-20
AU2009240083A1 (en) 2009-10-29
US8864959B2 (en) 2014-10-21
SI2274763T1 (sl) 2019-02-28
CA2721249A1 (en) 2009-10-29
BRPI0910613A2 (pt) 2017-08-29
TWI449077B (zh) 2014-08-11
KR101558018B1 (ko) 2015-10-19
RU2010147405A (ru) 2012-05-27
ES2703385T3 (es) 2019-03-08
KR20110015566A (ko) 2011-02-16
AU2009240083B2 (en) 2013-08-29
SG188799A1 (en) 2013-04-30
PL2274763T3 (pl) 2019-03-29
BRPI0910613B1 (pt) 2021-06-22
US20090260977A1 (en) 2009-10-22
EP2274763A1 (en) 2011-01-19
CN102017055B (zh) 2014-05-07
CA2721249C (en) 2016-10-18

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