TW200807522A - Wafer processing apparatus and method - Google Patents

Abstract

An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.

Description

。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。

I. The technology of the invention belongs to: J. The present invention relates to a method and a device for processing a substrate. In particular, it relates to a device for positioning a substrate relative to a device for processing the edge of the substrate. Method and apparatus for concentric state. Further, the present invention provides a sealing structure for an alignment device. Furthermore, the present invention discloses a process for dry etching a substrate using a combustion flame. I: Prior Art 3 Background 15 In this description, only background information related to the present invention is provided and does not constitute prior art. In the fabrication of integrated circuits, germanium substrate wafers are subjected to a variety of processes including deposition and etching of dielectrics, metals, and other materials. At many stages of the manufacturing process, it is best to "clean," the edge regions of the wafer to remove unwanted films and particles including particles that are processed by the wafer. This is included in the wafer. Membrane and contaminant produced on the top surface of the edge (mainly treated side), near the back of the edge, and on the edge (including the top bevel, crown and bottom bevel) (below, close to the edge top surface, near the edge back, and edge combination) Ground or individually referred to as "edge area,". Removal of membranes and contaminants for 5 200807522 It is necessary to prevent particles from moving into the component parts of the wafer, and the particles that may cause contamination are generated during wafer processing, processing, and "momentary motion" due to membrane stress ( P0p-0ff), the effect is produced. In an effective and cost-effective manner and without affecting the rest of the wafer containing the process read 5, the processing and removal of the edge region film and contaminants is - The big challenge, which will be exacerbated by the use of chemicals and processes that can adversely affect the component parts of the wafer's processing. Many existing membrane removal techniques fail to properly remove the polymer, the edge ball 10 The material, dielectric or germanium, in particular removed from the edge region, is what the wafer manufacturer wishes to achieve. In detail, it is necessary to maximize the available surface area of a wafer and thereby make it unusable. The edge area is reduced to a minimum to achieve the maximum wafer yield target. The reduction in functional wafers from the usable surface area is known as yield loss and is generally undesirable and will be 15% There is a negative impact, and therefore, there is a need in the art to improve a method and apparatus for removing various front, back, and range films and contaminants in a cost effective and efficient manner. [Mingine 3 Summary; According to the invention, an edge region substrate processing method and apparatus provide many advantages over other processing methods and systems. One aspect of the invention relates to a method and apparatus for dry chemical processing at atmospheric pressure, and an edge of a substrate The region is isolated from the rest of the substrate. The substrate edge region processing device has an isolator for isolating a portion of the edge region of the substrate to be processed 6 200807522, and one or more trenches are formed in the spacer a space for restricting the flow of reactive species to the edge region of the substrate. One or more nozzles are disposed in the separator, and at least one of the one or more nozzles is perpendicular to a top surface of the substrate An angle between the levels. 5 one or more of the nozzles are used to project one for and on an edge region of the substrate a reactive species reacted by the material, and the pressure difference biases the reactive species away from the substrate region outside the isolator. The present invention also discloses a substrate edge processing method for isolating and processing a portion of a substrate, and The portion to be processed extends from the edge 10 of the substrate through the top surface of the substrate to another portion of the edge of the substrate. A pressure differential barrier is formed on the substrate to be processed and the rest of the substrate And passing a reactive species to a treated portion of the substrate at an angle greater than parallel to the top surface of the substrate and perpendicular to the top surface of the substrate. In other embodiments, the edge regions of the substrate are to be processed. Separating the rest of the substrate from an inert gas/current sin that is adjacent to the remainder of the substrate to form a barrier and causing a reactive species to flow toward the edge of the substrate at an angle relative to the top surface of the substrate Oxygen gas flowing into the processing chamber plus a negative exhaust pressure along the edge region of the substrate can be used to bias the reactive species away from other gases. The non-treated area of the substrate. The method and apparatus described above can accurately process a portion of the substrate, particularly the edge region, without invading the exclusion region. As part of the pressure, 'σ & 4 device isolator structure, flow control is effectively limited to the 2008 20082222 reactive species migration into the exclusion zone. The use of the reactive species to flow to the edge regions of the substrate allows for a high etch rate and provides a significant overall improvement in the processing substrate. In summary, the system provides a method and apparatus for processing the edge regions of a substrate in a clean, efficient, and efficient manner that is highly desirable for achieving low contamination of the component parts of the substrate.

The present invention further provides a method and apparatus for aligning a wafer in a high concentric and precise manner, and the concentric processing operation has many advantages over the prior art. It allows for the removal of many unnecessary films in the gas phase from the edge regions of a semiconductor wafer at atmospheric pressure. The concentric processing operation measures the radius of a wafer at a plurality of locations as the wafer 10 is rotated on a jig. A precise center of the wafer is then counted and the wafer is repositioned at the precise center for processing. Also disclosed herein is a multi-axis moving seal (i.e., a labyrinth seal) for sealing the process chamber during processing of the wafer, and the seal functions in conjunction with a wafer holder. The seal defines a vacuum chamber with the processing chamber and the vacuum chamber is coupled to a vacuum that is movable to engage the alignment system. In addition, a process for treating the wafer based on a combustion flame is disclosed herein. The disclosed chemical reacts in a combustion flame and produces a reactive species that can process the wafer in a precise and efficient manner. 2 In another embodiment, a system for removing an insulating film from an edge region is provided, and these films are etched using a 化学2: NFs main chemical. Some metal films can also be removed, examples of which include tungsten and tantalum. Also, many metal oxide or nitride films can be etched. Other areas of applicability of the present invention will be apparent from the following detailed description of the <RTI ID=0.0> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; It is intended to limit the scope of the invention. The drawings are intended to be illustrative only and are not intended to limit the scope of the invention in any way. 1A-1C is a cross-sectional view showing a system for concentric wafer processing operations; ® Figure 2 is a top plan view showing the exchange/centering and processing 10 position of a wafer in a processing chamber; A side view showing the exchange/centering and processing position of a wafer in a processing chamber; Figure 4A is a side cross-sectional view showing the relationship between a labyrinth sealing assembly and a processing chamber and fixture assembly; 15 Figure 4B A top cross-sectional view showing the relationship between a labyrinth seal assembly and a process chamber and a clamp assembly; Art &quot; Fig. 5 is a side cross-sectional view of the isolation chamber shown in Fig. 1A; _ Figure 6A shows a relative a top view of a plurality of nozzle bodies at the edge of the wafer;

V 20 6B to 6F are side views showing inclined nozzles at a wafer bevel area, and FIGS. 7 to 8G are cross-sectional views of preprocessed and post processed wafers; FIGS. 9A-9C are shown in FIG. Side view of another nozzle structure at the bevel area of the wafer; 9 200807522 FIG. 28 is a schematic view showing unaligned wafers at two different rotational positions relative to an aligned position within the exchange/centering device; FIGS. 11-12B The optical inspection system of the present invention is shown in detail; FIG. 13 is an exploded cross-sectional view showing a portion of the processing chamber and the 5 isolation assembly shown in FIG. 1; FIGS. 14A and 14B are diagrams shown in FIG. Sectional view of the sealing mechanism of the system, Fig. 15 is a perspective sectional view of the sealing mechanism shown in Figs. 14A and 14B, and Figs. 16A and 16B are cross-sectional views of the system shown in Fig. 3; 17A-17C Figure 13 is an exploded view of the isolation assembly shown in Figure 13; Figures 18A and 18B are perspective views of the nozzle assembly of Figure 17A; and Figures 19A and 19B show the use of the nozzle assembly of Figures 18A and 18B. Nozzles; 15 Figures 20A and 20B show the nozzle assemblies in Figures 18A and 18B Another nozzle is used; 21A and 21B show another nozzle assembly; 22A and 22B show the nozzle sub-plates shown in Figs. 21A and 21B; and 23A and 23B show another ignition assembly of the present invention. Cross-sectional view; 20 Figures 24 to 25B show top and side views of the ignition and nozzle assembly; Figure 26 is a perspective view of another cleaning ignition assembly; Figure 27 is a wafer processing system for Figure 1A A top view of the flame sensing system in the middle; and panels 28 and 29 show the responses detected by the flame sensing system. 10 200807522 t Embodiment 2 Detailed Description The following description is by way of example only and is not intended to limit the disclosure, μ 5 1Α and 1Β® show the plan of the component and method system required for the processing of the Xiaoxin processing operation on the day of the day of the teaching, and an example is related to the selection of the near edge region of a wafer. Chemically perform chemical operations. Other applicable methods and devices are disclosed in U.S. Application Serial Nos. 11/230,261 and 11/417,297, each of which is incorporated by reference. The center of the near-edge film removal technology of the invention is the use of reactive gases for rounding in a high concentric and precise manner. Processing operations are typically sensitive to variations in wafer or substrate eccentricity within 50$1〇〇μη4, and most subsystems are required to achieve this processing operation. Figure 1 shows a schematic diagram of a system μ plane for the entire system of concentric wafer processing operations, and the processing chamber 22 includes means for controlling the supply of reactive gases to the isolation and expansion of the region near the edge region. . The R-ζ-θ or xyz_e wafer movement alignment module or system 27 is shown in the wafer loading *彳 line' and at this position, the thunder (four) micrometer (10) is the wafer edge in the middle, the middle route The trajectory of time. Also, a plurality of top pins 16 are also shown here. The device end module 17 includes a robotic arm and pre-aligner station 19, and a plurality of wafers are processed by a front opening unified standard container. The cabinet 2 includes control electronics, computers, endpoint equipment, gas delivery equipment, and other ax connections. The process gas 21 is connected to the module and its flow is regulated by a dual appropriate mass flow controller (MFC) 52, and may also be connected to other equipment connections such as the exhaust section 11 200807522 56 and the cooling water 58.

Referring to Figures 1A-9C, an embodiment of the wafer edge region processing system 2 ("system") of the present invention includes a processing chamber 22 having an isolator 25 and associated wafer holders 28 disposed thereon. Wafer alignment module 27. A crystal 5 circle 26 is held on top of the wafer holder 28, and the wafer 26 has a top surface 30, a bottom surface 32, and an edge region 33 (including edges and near edges of the lighter lines near the edges) And the edge region 33 surrounds the radial periphery of the wafer 26. The isolator 25 has a segment 38 extending over a portion of the top surface 30 of the wafer 26 and a lower portion 39 extending over the bottom surface 32 of the wafer 26. The inside of the isolator 25 has a processing area for processing the edge region 33 of the wafer 26, and the processing region extends into an exhaust space 41, and the exhaust space 41 and a device for exhausting gas and processing The product and condensate exhaust system 56 are connected. Disposed within the upper portion 38 of the isolator 25 are a first nozzle 45 and a 15 second nozzle 49, and both nozzles are configured to directly emit a flow of reactive species toward the edge region 33 of the wafer. The first nozzle 45 is offset from a plane perpendicular to a top surface 30 of the wafer 26 (the "wafer plane,"), and the first nozzle 45 is 8 相对 opposite the wafer plane. +/_5 The angle is directed to the top surface 30. The second nozzle 49 is offset from the wafer plane by an angle of 45. + / _ 5 , and the 20th nozzle 49 is also perpendicular to the plane of the wafer and passes through the isolator Deviated from the plane of the center of the wafer 26 by ~15. The first nozzle 45 is connected to the first passage 48' disposed in the upper section % and the passage is extended to the gas line 47. The second nozzle is connected to a setting The second channel μ of #38 is eliminated, and the second channel 53 extends 12 200807522 to a gas line 47. The first nozzle 45 and the second nozzle 49 are connected to a reactive gas species through the gas line 47. The source, or the first and second channels 48 and 53 may be coupled to a source of reactive species having different chemical properties. 5 10 15 20 The first nozzle 45 is positioned to be 0.1 to 0.5 from the edge of the wafer 26. Mm and from 1 to 3 mm from the top surface 30 of the wafer 26 for bevel and crown The second nozzle 49 is positioned to perform bevel and crown processing at a distance of 0.5 to 3.0 mm from the edge of the wafer 26 and from 0.6 to 1.1 mm from the top surface 30 of the wafer 26. The radial position and distance from the wafer plane are determined by the desired edge removal area and are also related to processing and film. The reactive gas species source can provide a reactive gas species or form the reactive gas species. The constituent reactants, and the reactive gas species can be produced by a near atmospheric pressure technique. This includes a near-atmospheric capacitive light-weight plasma source (ie, APJET) as disclosed in U.S. Patent No. 5,961,772. An inductively coupled plasma discharge (ie, an ICP torch), or a combustion flame, as disclosed in U.S. Patent No. 6,660,177, the disclosure of which is incorporated herein by reference. And these reactive species preferably do not produce the ion bombardment characteristics of ionic plasma, and thereby reduce the possibility of surface and component damage. Moreover, these techniques do not need a true a chamber and associated equipment. A purge space 88 disposed above the upper portion 38 extends to or near the top surface edge of the wafer 26 and is over a region of the wafer to be processed and passes through the region 2008 200807522 At or near the other edge of the top surface 30 of the wafer 26. The upper purge space 88 is ~3.0 mm wide and extends over a full path length of ~37.5 mm, and the upper purge space 88 is a reactive The gas is removed from a portion of the conditioning flow system of the processing zone. 5 The upper purge space 88 is coupled to a first purge channel 92, and the first purge channel 92 is coupled to a blow through a purge gas line 94. A gas source 96 is scrubbed. The purge gas source 96 supplies an inert gas such as argon, and the inert gas system is sent to the upper purge space 88 via the first purge passage 92. Or the upper purge space 88 can provide 10 CDA or oxygen-containing gas that enhances the reactivity of the reactive gas. The use of an oxygen-containing gas can react with unreacted H2, and this can also compensate for extreme length limitations and can have a higher volume percentage of NF3. A higher NF3 volume percentage results in a higher etch rate and a larger throughput, and it is seen that a purge channel is provided in the upper section 38 of the isolator 25, but may also be used to purge A gas stream is introduced into more than one of the upper purge spaces 88. The purge passage flows into the upper purge space 88 to create a pressure differential in the region of the top surface 30 that is wrapped by the upper purge space 88, and thus between the top surface 30 and the edge region 33 of the wafer 26 to be processed. A barrier. The upper purge space 88 and the top surface 30 of the wafer 26 are separated by an inner baffle 20 100, and the inner sill 100 extends along the inner periphery of the upper purge space 88 and is separated from the wafer 26 by 0.30. A gap of 0.80 mm. An outer baffle 104 extends along the outer periphery of the upper purge space 88 and is separated from the wafer 26 by a gap of 0.50 to 1.10 mm. As shown, the outer baffle 104 is wider and closer to the top surface 3 of the wafer 26 than the inner deck. This facilitates 14 200807522 by forming a pressure around the inner baffle 100 to bias a flow of purge gas into the processing region of the isolator 25 to form a portion of the wafer 26 during processing. Pressure causes the barrier. A second purge passage 108 is disposed in the lower section 39 of the isolator 25 and is coupled to the purge gas source 96 by the purge gas line 94. The second purge passage 108 is for delivering purge gas to the lower purge space 114 and is similar to the upper purge space 88 which extends from or near the edge region 33 of the wafer 26. Below the bottom surface 32 and extending through the bottom surface 32 to another location at or near the edge of the wafer 26. Similar to the 10 upper purge space 88, the remaining purge space 114 is disposed between the lower inner baffle η2 and the lower outer baffle 118. Further, the lower purge space ι14, together with the lower inner side fence 112 and the lower outer side fence 118, deflects the purge gas flow in a direction passing through the lower inner side plate 112 and passing through the bottom surface 32. The wafer holder 28 can be moved by the module 27 in the r-θ-ζ or xyz_e direction to position the wafer 26 and rotate it in the slot of the spacer 25 formed between the upper portion 38 and the lower portion 39. . Alternatively, the isolator 25 structure can also be moved towards r and the clamp moves toward the jaws and z. Once positioned, the distance between each side of the wafer 26 and the upper segment 38 or lower segment 39 is 0.30 to 0.80 mm. The slot opening area of the wafer is 124.20 to 216.20 mm2, and has a groove 26 of the wafer 26, a hole opening area of 147.20 mm2, and a vent hole width of 93.〇mm. A gas diffuser 24 extends into the processing chamber 22 and provides an inert gas or oxygen-containing gas stream to the processing chamber 22, which is typically a showerhead structure and is coupled via a diffuser 24 gas line 148 to The purge gas source 96. 15 200807522 The exhaust space 4i and the exhaust portion % are another part of the adjustment flow system for preventing the reactive species from moving out of the treatment region, and the exhaust portion % generates a negative pressure in the exhaust space 41, The reactive species gas and the inert gas, process byproducts, and condensate are pumped away from the processing zone and 5 is prevented from moving into the component regions of the wafer 26. A heating element 122 is coupled to a heating power source 126 by a heater wire, and the heating element 122 heats the isolator 25 and heats the wafer 26 to a lesser extent, while heating the isolator 25 to prevent corrosion of the isolator 25 It is necessary to introduce contaminants into the gas condensate of the treatment zone. The nozzles of the edge region processing system 20 including the first nozzle 45 and the second nozzle 49 are made of sapphire, and the sapphire has the advantage of being non-reactive with chemicals made in the substrate processing. This is necessary because the processing of the semiconductor substrate requires microbial contamination analysis in parts per million and the acceptable added value for the substrate is less than about 1 〇 1 G atom 15 / cm 2 . In addition, for those larger than about 0.1 microns, the particle addition value to the substrate should be zero. In many cases, it is also desirable to achieve a laminar gas flow from the nozzles, which requires setting the nozzle aspect ratio to be greater than or equal to l〇x length to diameter ratio. For some reactive gases, an aspect ratio greater than 40: 1 or 20, preferably 80: 1 is required. The inner diameter of the nozzle is approximately 0.254 to 0.279 and requires a uniform smooth nozzle bore length of approximately 2.50 mm. Although the nozzles of the separator 25 including the first nozzle 45 and the second nozzle 49 are at an angle of ～80 degrees and ～45 degrees with respect to the wafer plane as described above, it is preferable to face the wafer plane in different directions. In order to carry out the treatment including etch 16 200807522 engraving or depositing a film. In operation, a wafer 26 is centered on the wafer holder 28, and then the wafer holder 28 positions the wafer 26 in the slot of the isolator 25 and is located in the upper segment 38 and the lower segment 39. Between, for processing. The mobile 5 system 27 then rotates the wafer holder 28 and rotates the wafer 26. Next, an inert gas or CDA is allowed to flow from the purge gas source 96 into the upper purge space 88 and the lower purge space 114. The inert gas or Cda flows into the upper purge space 88 and the lower purge space 114 at a rate of 100 sccm to SOOOsccm, and may also allow an inert gas or CDA to flow into the processing chamber 22 via the gas diffuser 24 10, and the gas is A flow rate of 500 sccm to 1000 sccm flows into the processing chamber 22. Heating element 122 is then actuated to heat the wafer top surface 30. This optional step is to prevent vapors, such as water vapor, which are by-products of the chemical reaction from condensing on the top surface 3 of the wafer. Coagulation can be prevented by heating the dome surface 30 of the crystal 15 to a temperature equal to or greater than the boiling point of the by-product of the reactant, for example, heating the top surface 3 of the wafer to more than i〇〇〇c to prevent condensation of water. . Alternatively, surface heating of wafer 26 may be provided by a heated substrate holder 82, by infrared energy directed toward the periphery of the wafer, or by other sources of heat such as flame. 2〇 Next, the exhaust system 56 is actuated to extract gas and process by-products including condensate via the exhaust space 41. Then, the reactive species 射3〇 is emitted by the first nozzle 45 and the second nozzle 49, and the ignition power source 126 activates the cleaning ignition system 78' and the first gas line 93 and the second gas line 98 are opened to allow hydrogen gas to Nitrogen trifluoride gas flows into the nozzle assembly 84 and passes through four 17 200807522 nozzles 84. The reactive species (or gas if a flame is burned) flows through the nozzles at a rate of 375 sccm to 475 sccm, and the reactive species 130 impinge on the edge region 33 of the wafer 26 as the wafer 26 rotates. on. The reactive species 130 reacts with a thin film or contaminant in the edge region 3 of the wafer 26 to produce a reaction byproduct 66. Also, other nozzle configurations can be used. For example, see Figures 9A-9C. The locations of the first processing nozzle 45 and the second processing nozzle 49 include the reactive species 130 to "surround" the top bevel of the wafer 26. , crown, bottom bevel. The reactive species 130 can exit the separator, 25 by utilizing an inert gas flow that acts simultaneously with drawing a gas into the exhaust space 41 and drawing a pressure differential into the exhaust system 56 10 . The inert gas forms a press barrier wall surrounding the processed edge region of the wafer in the upper purge space 88 and the lower purge space 114 and the inner baffle member 61 cooperating with the outer baffle member 63 will be inert The gas stream is biased toward the processed region of the wafer 26. Reaction by-products resulting from the reaction of the reactive species 130 with the film on the surface of the wafer 26 will be drawn away from the treated region of the wafer 26 and into the exhaust space 41. As such, reactive species 130 and reaction byproducts 142 can advantageously be confined to the edge regions of the wafer 26 and prevented from moving into other regions of the wafer 26 to damage the wafer constituent elements. In addition, the negative pressure generated by the venting space 41 biases the airflow away from the central portion of the wafer 26. As the wafer 26 rotates, the wafer holder 28 moves relative to the nozzle assembly 84 and the combustion flame through the top surface 3 of the wafer. Therefore, the desired portion of the top surface 30 can be treated. Processing includes removing a film as previously described for the substrate processing method, for example, dioxide chopping or ruthenium. 18 200807522 After the wafer has been processed, the first gas controller 102 and the second gas controller 106 are turned off. At the same time, the third gas controller 49 is opened to allow argon or CDA to enter the delta edge nozzle assembly 84 and pass through the first fish second nozzles 45, 49 to "blow out" the combustion flame. In addition, if the εμ〇 or electric 5 force is interrupted, the controller 140 can also stop the nozzles from blowing. Also, if the cover is opened, or if control air loss occurs, the controller 52 can transmit pressure due to low gas. And annihilating the flame. In addition, most of the η2 sensors are consuming with the controllers, and if the value of Η2 in the chamber 22 exceeds a predetermined value, the % sensor will cut the system or An alarm signal is issued. After the process chamber 22 evacuates the process gas and by-products, the wafer 26 is removed. The processing of the edge region 33 of the entire wafer can be accomplished by a single rotation of the wafer 26. Alternatively, more than one rotation may be produced and more than one treatment including deposition and etching may be performed. After the reactive species ceases to flow, the inert gas continues to flow until the processing chamber 22 sufficiently withdraws the other gas 15 and the condensate. Next, the heating element 12 is turned off. 2 and the inert gas or CDA gas from the purge gas source 96 ceases to flow, and the wafer 26 is removed and replaced with another wafer for processing. The foregoing system 20 is adapted to the method of using the system. Etching a target film, including, but not necessarily limited to, a button and tantalum nitride; an interlayer dielectric; 20 a backside polymer; and a photoresist edge ball. Figure 2 is a system of the first embodiment The top view 'shows the isolator 25 and associated nozzle assembly 84, FTIR system 212 and heating element 122. The mobile system 27 and labyrinth seal 70 and micrometer 15 are also shown, and the wafer 26 utilizes the The movement of the wafer holder 28 is moved by the mounting position 19 200807522 134 to the processing position 136. Figure 3 shows the exchange/centering position 丨 34 and the processing position 136 of the R-Ζ-θ stage, and the maze is also displayed therein. The seal 7 is opposite to the processing chamber and the clamp mandrel 60. The vacuum of the labyrinth seal 70 is provided by a vacuum pump 31 or 5 other suitable vacuum generators, and the computer control of the vacuum can be utilized. Electronic mass flow Or the pressure controller is coupled to a venturi vacuum generator. The vacuum for the wafer clamp clamping force is also provided by a vacuum pump 31, and it has been found that the pressure differential is the most important parameter determining function of the seal. A spacing between 10 120 μm and 500 μm between the sealing plate 74 and the bottom surface 76 of the processing chamber 22 is also important. The spacing of the moving 'R-axis' is the spacing from the 2-axis. When operating with appropriate conditions 'δ The air leakage rate of the sea seal is &lt;i 〇xi〇_6atm_cc/s, and this; the leak rate is equal to the leak rate of the ring seal interface. It should be noted that the 0 ring interface is currently not found. Accepted because they produce unwanted 15 particles. Next, the gap value in the range of 127 μm to 508 μm was measured and found to maintain an appropriate pressure difference. Since the mass flow size is greatly increased as the gap is increased, a practical limit of 254 {im is set, and the tolerance of the vehicle is set to 127 μm. I have found that the minimum pressure difference between the sealed vent and the process chamber 22 is water column, and a larger pressure difference can be used and the limit is practically unknown. The pressure difference between the process chamber and the atmosphere should be at least _〇·4 water column pairs and this causes the pressure difference of a sealed exhaust gas to the atmosphere to be at least -2.4 water column alpha. Figure 4Α-4 shows a side and top view of the labyrinth seal 7〇 in relation to the process chamber 22 and the movement 20 200807522 system 27, wherein the vacuum channel seals the lateral (R-axis) movement and the passage 79 seals vertically _ ) and rotate the moving component. Each vacuum channel is connected to an independent control vacuum generator or pump through a pipeline. Please note that the labyrinth seal plate 74 is made of Gang or 316 series non-mine 5 steel, and the corrosion resistance is available by electropolishing. After finishing with the purification, the metal finishing process is enhanced. ^ Please refer to FIG. 1_96 again, the substrate processing method of the present invention is implemented in an example of a high oxygen environment 13 comprising a hydrogen field 2) and a nitrogen atom (NF3 as a non-oxygen "oxidant". The ignition ignites a 10 combustion flame 12 formed by the gaseous reactants. Although CDA is shown, other oxygen-containing gases can also be used. A mixture of gaseous reactants passes through the torch nozzle 45 before being ignited into the combustion flame 12, and the combustion flame 12 impinges on a substrate surface 18. The gaseous reactants react in a combustion flame and form gaseous hydrogen fluoride (HF) (a reactive species) and gaseous nitrogen (N2) emitters, and the following chemical equation 15 illustrates a stoichiometric mixture of gaseous reactants (3: 2 Mo Ear ratio) produces hydrogen fluoride and gaseous nitrogen: 3 % (gas) + 2 NF 3 (gas) ~ &gt; 6 HF (gas) + N 2 (gas) • Advantageously, this reaction is carried out essentially at atmospheric pressure. As such, viscous (rather than molecular) flow properties can be used to accurately treat portions of the substrate surface 18%, 20 and reduce exposure of other substrate regions to the reactive treatment. Although the foregoing description is a molar ratio of 3:2, it is also possible to use a lower or lower ratio depending on the desired result. In addition, this reaction is not produced by a plasma-producing ion-generating place. We believe that a plasma is a collection of discharge particles, and the long-distance electromagnetic field generated by the discharge particles such as 21 200807522 acts on the particles and influential. At the same time, it is believed that the combustion flame 12 is substantially free of ionic species and, therefore, there is no risk of ion damage to the substrate. H2 and the just exothermic chemical reaction will generate a large amount of heat, and this effect 5 makes the HF of a small amount of highly reactive species can be generated by the energy exhibited by the generated temperature, and then the high temperature will substantially increase the reaction rate to produce enthalpy. The high side speed, therefore, can result in a higher throughput. According to the following full reaction and using the hydrogen fluoride, a magnet dioxide film can be surnamed: 1〇4HF (gas) + 2Sl02 (solid) 4 traces 4 (gas) + 2H2 〇 (vapour) sorrow ruthenium tetrafluoride and water vapor The cerium oxide film is removed, and this reaction advantageously changes the dioxide from a solid to a gaseous by-product that can be easily withdrawn. Gaseous hydrogen fluoride will also etch the surface of the substrate, and the ruthenium etching follows the total reaction of 15: 4HF (gas) + Si (solid) - SiF4 (gas) + 2H2 (gas) In this reaction, gaseous tetradymium tetrafluoride Gaseous hydrogen leaves the surface of the crucible substrate, and this reaction causes the stone on the surface of the substrate to change from a solid to a gas by-product that can be easily withdrawn. 20 Similarly, a button film can be etched by the following full reaction: 10HF (gas) + 2Ta (solid) - &gt; 2TaF5 (gas) + 5H2 (gas) In this reaction, the gaseous pentafluoride button and gaseous hydrogen leave the The surface of the crucible is 'and this reaction causes the crucible on the surface of the substrate to change from a solid to a gaseous by-product that can be easily withdrawn. For this reaction, the use of a 〇2+H2 22 200807522 flame to preheat water is necessary to prevent condensation of the reaction product on the wafer. The organic and polymeric films can also be removed by the aforementioned chemical means, but in some cases this becomes less desirable because of the choice of Si and Si〇2. For example, when it is necessary to etch an oxide without etching Si, Si 〇 2 may be etched instead of Si by the aforementioned chemical method. By first exposing an etched range to an oxygen-rich hydrogen-rich flame, the passivation of the exposure relative to the etching chemistry can be enhanced. Next, the etched range is exposed to the combustion flame of H2 and NF3 to engrave the oxide. 10 Other necessary non-oxygen oxides required for reaction with the combustion flame for substrate etching include fluorine (F2), chlorine (C!2), and chlorine trifluoride (C1F3). The reaction of hydrogen and fluorine in a combustion flame is as follows: % (gas) + F2 (gas) - 2HF (gas) Similar to the combustion flame of H2 and NF3, the obtained hf reactive species 15 is as necessary as described above. Engraving agent. The reaction of hydrogen and chlorine in a combustion flame is as follows: Η! (gas) + Cl2 (gas) - » 2 HCl (gas) The reaction of hydrogen with chlorine trifluoride in a combustion flame is as follows: 43⁄4 (gas) + 2 ClF3 ( Gas)~&gt;6HF(gas)+2HCl(gas) 2〇In the above-mentioned combustion flame reaction, when a material which cannot be easily etched by fluorine is present in the film layer, the obtained hydrogen chloride-reactive species can be advantageously used. Carry the last name. This includes a film layer containing aluminum, and hydrogen chloride as a reactive species is etched as follows: 2A1 (solid) + 6 HCl (gas) - &gt; 2 AlCl 3 (gas) + 33⁄4 (gas) 23 200807522 Hydrogen chloride is etched as follows 矽:

Si (solid) + 4 HCl (gas) 3 SiCl 4 (gas) + 23⁄4 (gas) Hydrogen chloride etches the dioxide as follows:

Si〇2 (solid) + 4 HCl (gas) ^ SiCl4 (gas) + 2H20 (vapor) 5 The chlorine trifluoride represents a mixed etching chemistry in which a fluorine- and chlorine-based etchant-reactive species is produced. Generally, when a plurality of materials are present in the film layer, the compound is combined with another fluorine-containing gas (e.g., NF3 or CF4) or used in a different ratio with CL, and thus a removal treatment of the fluorine-containing and chlorine-based chemicals is required. The chemical equation shown above is a simplified concept of the true reaction occurring within the combustion flame with the surface of the substrate, and the reaction chemistry that occurs is quite complex and produces most intermediates and final reaction products. A nozzle assembly 84 is held by a support member 46 over a wafer 26 and the 5 wafers 26 are held on the substrate holder 82. Four nozzles 45 15 are disposed in the nozzle assembly 84, and the nozzle assembly 84 remains at a distance of ~1.5 mm from the wafer top surface 30 during processing. A hydrogen source and a nitrogen trifluoride gas source 55 are connected to a common mixed gas line 11 by a first gas line 48 and a second gas line 53 and through a first gas controller 1〇2 and a second gas controller 106. That is, and the common mixed 20 gas line 110 is connected to the nozzle assembly 84 to combine and mix!! 2 with NR. A vent 116 is located adjacent the substrate holder 82 to vent gas and reaction byproducts, and the vent is connected to a blower 124' by a space 67 and the gas is passed through the blower 124 The processing chamber 22 is withdrawn from the reaction by-product. 24 200807522 And through the application of wealth, the argon source 96 is connected to the treatment (4) by using a 13 gas line m, and a sputum control unit 49. In another embodiment, -CDA (clean dry air) or oxygen-containing gas 72 is connected to the gas line 132 through the third gas control (10) = the argon or gas source 131 is also utilized - fourth The gas line m is loosened to a co-observation gas line (10) through a third gas (4), and one

The ignition system 78 positioned adjacent to the nozzle assembly 84 is finely coupled to an ignition source 126. In operation, the robot arm unloads the wafer from the front opening unified standard container (F0UP) 10 and places the wafer on a pre-aligner (not shown). Once the pre-alignment is completed, the robot arm retrieves the wafer from the pre-aligner and places it into the processing chamber 22 and places it on the plurality of top pins 16. The wafer break 2_z axis moves up and the wafer 26 is lifted by the top pin 16 and the wafer edge is positioned for measurement using the laser micrometer 15. Next, the 15 center shift direction and the offset amount in the wafer are calculated as described above, and the wafer 26 is rotated to align the offset direction with the V axis. The wafer holder 28 is then lowered along the z, axis to return the wafer to the top pin 16. The wafer moving system 27 moves the fixture assembly in increments of an offset, r, on the axis to center the wafer holder 28 relative to the wafer 26. Next, the moving system 27 is raised along the z' axis to raise the wafer from the top pin 16. Then, 20 re-measures the edge position to achieve centering, so that the wafer can be concentrically processed as described above. A heating element 122 is positioned adjacent the area of the wafer to be processed, and the heating element 122 (shown in FIG. 5) is an infrared (IR) or laser diode heater and is connected by a heater wire 87. To a message heating power 〖25. In a preferred embodiment of 25 200807522, the heating element 122 is a fiber-optic consumable laser diode array, and the fiber optic cable can be transmitted at a remote laser diode assembly. Power light. This light can be used to heat the wafers 26 as disclosed in U.S. Patent Application Serial No. 2005/0189329, the disclosure of which is incorporated herein by reference. Figures 6A through 6F show the position of the nozzles 45, 49 relative to the beveled edge of the wafer 26. By staggering the angles of the nozzles, the edges of the particular area of the edge of the wafer can be suitably covered. Accordingly, various nozzle configurations can be used depending on the missing or coating to be removed. Referring to Figures 7 through 8G, a film deposited by chemical vapor deposition (CVD) or physical vapor deposition (PVD) is stretched onto a wafer 26 as a film 129. The film 129 extends from the top surface of the wafer 26 through the top bevel, crown and bottom slope of the wafer 26, and the system 2 can advantageously treat the film 129 on the wafer 26 with 15 and obtain The cross-sectional shape of the wafer 26 as shown in Fig. 8B. Referring to Figures 7 and 8C, a full cover film 128 extends from the top surface through the top bevel, crown and bottom bevel of the wafer 26, and the film having the cross-sectional shape may comprise, for example, thermal SiO 2 and Si 3 N 4 . The implementation of the foregoing system 20 can be used to process the fully covered film 12 8 on the wafer 26 and to obtain the cross-sectional shape of the wafer 26 as shown in Fig. 8D. Referring to Figures 7 and 8E, a backside polymer film 130 extends through or near at least a portion of the crown to the bottom slope and on the bottom surface of the wafer 26. Embodiments of the foregoing system 20 can be used to process the backside polymer film 13A on the wafer 26 at 26 200807522 and to obtain the cross-sectional shape of the crystal 26 as shown in the gF. Please refer to the following section 9A-9C 'Edge Area Processing System 2', another embodiment ("first additional system,") using additional first and second nozzles 45, 5 49. In another nozzle configuration The second nozzle "bends" the reaction gas from the first gas around the bevel edge. Figure 9A shows a 657140. The nozzle configuration, and this configuration causes the reactive gas to be produced to be around the wafer 26 bevel Each of the four nozzles 45, 49 is made of sapphire and has an inner diameter of 〇.254 mm and an aspect ratio at the outlet end: between 10 and 80: 1. Four nozzles 45, 49 Each nozzle is pressed into the nozzle assembly 84, and the nozzles are pressed into the tight fit tolerance bores of the majority of the cut steel nozzle assemblies 84. The nozzles are pinched, +_mm, __ The coffee, and the diameter of the inner hole of the sapphire nozzle used in the total fineness of the nozzle is 1 576 mm, and the tolerance of the sapphire is 15 -0. This tolerance is important because it is only after this range. A hermetic seal is achieved in the event that the stainless steel nozzle assembly 84 is elastically deformed. A good seal is achieved in the event that particles are produced during processing. In this configuration, the use-breaking jet 89 is used to ensure that the flame does not interact with the exhaust system 56. Further, the lower groove can be made 20 The reactant does not affect the back side through the separator. Figure 9A shows that under certain processing conditions, the flame output will impinge on some portion of the exhaust or isolator structure. Although the lower tank 51 gas is typically used Prevent reactive gases from flowing upstream, but under certain processing conditions, the gases will still be forced to flow to the wafer (10). As indicated by the paste, 27 200807522 can reduce or eliminate the reaction by using a disrupted jet 89 Sexual gas impact. In addition, the reaction product does not move to the back side of the wafer through the gas flow on the back side. Although NF3 is used as the oxygen oxidant in the foregoing embodiment, the first five non-oxygen oxidants are also suitable for the preferred embodiment. In addition, other embodiments for isolating and processing a wafer in accordance with the foregoing method are disclosed on September 19, 2005, entitled "Method and Apparatus for Isolative Substrate E. U.S. Patent Application Serial No. 11/23, filed on Jun. No. No. No. No. No. No. No. No. No. No. No. No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No The hydrogen component is carried out in the range of 0.6 to 0.7, for example, if the total flow rate is 800 sccm, the % flow will be in the range of 480 sccm to 560 sccm, and the NF3 flow will be in the range of 320 sccm to 240 sccm. 'IR preheating can be used to prevent combustion products from condensing on the substrate. The removal of the tantalum from the near edge region of the substrate is carried out using an etch nozzle configuration similar to that of the dielectric removal, with a total gas flow of about 800 sccm and a Η: component in the range of 0.6 to 0.7. The primary etch product is TaF5 having a boiling point of -230 ° C, and the substrate surface temperature in the etched region must be maintained at about this temperature to prevent the etched product from condensing. This can be easily achieved by another burner positioned to burn a flame nozzle (not shown) on the substrate immediately before impacting the etching flame, and the preheating nozzle releases the best range. 5 to 仏·8 out and 仏 flame, and the total nozzle flow relative to the total flow of the component is ~4 〇〇 sccm. The edge region of the wafer 26 is processed by the substrate edge processing device 28 200807522 5 • 10 loo and the wire processing method is performed at an accelerated speed, and the side velocity of the edge portion of the wafer 26 can be exposed according to consideration. Width, wafer perimeter and rotational speed are calculated. For example, consider a wafer having a circumference of 200 mm that has 2, _Asi 〇 2 and rotated by 2, and the film of the 〇 2 on the edge region is completely removed after one rotation. If the combustion flame exiting the edge of the wafer (using a 0.256 mm nozzle inner diameter) has a conservative exposure width of 5 mm, the exposure ratio can be calculated to be 5 mm / (628 mm x 2 rev / min) = 0.004 min / rev. The surname velocity can then be estimated by dividing the 2,00 A/rev removal by the exposure ratio, i.e., 2,000 person/rev/0.0O4min/rev = 500,000 A/miii SiO2 removal. If assumed to be a smaller 2 mm exposure width, the removal rate will become 1,256,00 A/min. Based on these considerations and assumptions, a polysilicon film can be etched at a rate of about 3 x 106 A/min; a photoresist film is etched at a rate of about 4.6 x 106 A/min; and a film is etched at a speed of about 15 lx 106 A/min. This is a fairly high speed, so wafer throughput can be processed at high speed. A configuration is applied to the EBR from the spin-on film on the top and edge regions of the wafer, and this configuration uses a reactive gas generated by the combustion flames of H2 and 〇2 to remove the photoresist. Disclosed herein is a suitable method for using a small proportion of non-oxygen oxidant NF3 in a gas mixture for a light-blocking EBR, and this addition will increase the combustion flame temperature and chemical reactivity. These modifications to the combustion flame mixture substantially improve the clarity of the money interface and increase the slope of the transition to full film thickness, both of which are highly desirable improvements. 29 200807522 For spin coatings with low or very low residual speeds for chemicals such as organic tellurides, inorganic polymers, and spin-on glass materials, HNF can be added in larger quantities. Fluorine-containing gas to increase the etching rate. In a preferred embodiment, a reactive gas is supplied to the vicinity of the wafer. The edge region is disclosed in the "Meth〇d and

The invention for Isolative Substrate Edge Area Processing was achieved. Unneeded dielectric films can be removed from the front surface of the semiconductor wafer being processed, and these films will also flake off in a sheet form and cause a drop in yield. Further, the concentric processing operation is important in these processes where the reactive gas supply must be aligned with the target edge region and does not affect the component area of the wafer. The configuration of the neon removal is similar to the front dielectric removal module. , but the difference is that a preheating nozzle is used to reach a higher surface temperature (&gt;230〇c target) to prevent the condensing of TaF5 in the etched area. The surface temperature preheating target for typical film removal is ~120°. C and primarily to prevent condensation of water vapor by-products from the combustion reaction. It takes typically 8 to 15 seconds for the wafer to be centered in the field, and this auxiliary operation can overlap with the gas flow stabilization time or ignition sequence. Wafer, z, The plane position 20 is measured as it is rotated and can be used to mark the 'z' displacement due to wafer bending or warping.

The processing and details of the processing of the Ta and the dielectric are disclosed in detail in the "Substrate Processing Method and Apparatus Using a Combustion Flame" patent application, which is hereby incorporated by reference. Object and edge ball. Removal of the backside polymer in accordance with the principles of the present invention can be accomplished by using four nozzles positioned in the isolation structure. As shown in Figure 9C, the two nozzle systems are positioned 45 degrees relative to the wafer surface and the other two are 1〇5. . These 45. The nozzle 5 is aimed at the back, and the 1〇5. The nozzle is aimed at the bevel. Utilizing multiple nozzles in this manner increases the throughput and increases the process window, and the nozzle angle relative to the wafer surface is important because the impact angle affects the flow attachment to the surface and thus affects the reaction. The angle of transmission of a sexual species to the surface _. As previously discussed, a selective destruction jet 89 ensures that the 10 1 〇 5 ° nozzle does not damage the venting structure. It should also be noted here that in this configuration, the gas from the lower tank 51 can be used to "break" the flow of the flame so that it does not interfere with the exhaust gas. The level is on the bevel area of the wafer, so that the NF3 ratio in the jet is higher than the 45° jet aimed at the thiner poly 15 on the back side. Currently, the method is at 105° each. 210sccmH2, 80sccmO2, and 100sccmNF3 were used in the (high ratio) nozzle, and 240sccmH2, 12〇SCCm02, and 2〇SCCmNF3 were used in each 45. (low ratio) nozzle. ^ These nozzles have an ID of about 254μηι. Sapphire composition with an aspect ratio greater than or equal to 10: 1. The rotational speed used during processing is often in the range of 1 to 6 RpM and is used to prevent condensation from heating (&gt;100 °C target) It is achieved by using a fiber-coupled laser diode array. The chemical used for EBR is determined according to the film to be removed, and 240sccmH2, 120sccmO2, and 20sccmNF3 can be used for removing the photoresist. Speed is usually 1 to 3 RPM And the photoresist 31 200807522 5 • 10 EBR processing uses two nozzles, one is 45. The other is magical. When the minimum edge (~0.5mm) needs to be removed, only 65. The jet is used. The speed-removing film, usually containing a ruthenium film, requires a higher ratio of 3. The high proportion of the treatment for the backside polymer is an example (25% NF3), but it can often be used higher without adding oxygen. The ratio is ~50%. The nozzle aiming line for removing the backside polymer is shown in Figure 9C. The backside polymer removal method differs from the front side film in that it is not required to reach the full film thickness at the edge removal boundary. The violent transition. Most nozzles are used in a partially overlapping manner to increase the processing window and removal speed. The angle of the nozzle relative to the wafer surface is 45. and 65°, and these angles are combined with CFD models and experimental values. It is decided that for flow attachment and therefore for the effective removal of material from the beveled area, the position of the 65° nozzles is important and this angle can be optimally tailored to the shape of the edge section to achieve maximum flow attachment. Figure 10 shows a schematic diagram of the centering procedure, and the measurement window of the laser micrometer 15 • u. is represented by a rectangle 200. The edge of the appropriate centered wafer or circle with half control 150πππ is 202. Displayed, and the target centered position of the wafer is (XC, YC) 一 a misaligned wafer is shown in dashed lines at two different angular positions, and at a first position indicated at 204, the pre-centered wafer has The Θ1 angle is rotated by the Z axis 20, and the center of the wafer is represented by (XhYD). A second wafer position, indicated at 206, corresponds to a wafer rotating at a Θ2 angle and the center of the wafer is represented by (X2, 丫2). Figures 3 and 10 show the "Z" axis, the "R" axis, and the Θ angle from a reference coordinate system having an origin at (xc, Yc). The edge position measurement and offset meter 32 200807522 include the following • ι·Place the θ axis at the R-Ζ-θ stage of a known reference position; 2. Turn the Θ and measure the radial position of the wafer edge using a laser micrometer 15; 3. Measure the radius Equipped with a circle; 4· Calculate the position difference between the known Θ axis and the center of the resulting mating circle and generate the amount and angle of the wafer offset. 5 The centering routine measures and records 0, Ti, (l...n) representing the edge position and the reading Lb (1···η) of the laser micrometer 15 and, in this application, usually η =50. The true radius of the wafer is assumed (1 〇〇mm or i5〇mm) and the reference mark is added to the 缺口 by the wafer notch position. Next, calculate the following values for each data point: 1〇 Xi=(R+Li) · cos(Ti) la

Yi=(R+Li) · sin(Ti) lb The purpose is to minimize the sum of squared deviations from the following formula, DHXi+Xcf+d+Y^Rc2 2 where Xc is the X-axis center point, Yc*y The center point of the axis is the half of the path assumed by Re. The Gauss-Newton method is used to solve the set of linear equations. An example of this method is disclosed in Gander et al., BIT, vol. 34, 1994, ρρ·558-578, "Least-Squares Fitting of Circles". And

Ellipses". As shown in Fig. 11, the system 20 can include a 20 optical system 264 that inspects the edge of the wafer. Accordingly, the optical system has at least one magnifying lens 262 rotatably positioned around the edge of the wafer. The magnifying glass can receive the reflected light from the edge of the wafer and collect it into a CCD camera, and the magnifying lens preferably has a resolution of 2 μm and can detect defects on the edge of the wafer and the cleaning The effectiveness of the procedure. 33 200807522 As shown in Figure 12A, the system 20 removes the polymer on the bottom slope of the edge. Further, as shown in Figure 12B, the system can be removed from the top of the wafer to reveal In addition, the system can utilize the spectral reflectance of the film. In addition, the optical system is disclosed in U.S. Patent Application Serial No. 11/417,279, filed on May 2, 2006, entitled &quot;Substrate Illumination and Inspection System&quot; The application is hereby incorporated by reference. As shown in Figures 13 to 16B, the wafer processing system 20 includes a mandrel 60 and the wafer can be placed on four moving axes. The wafer moving system 10 27. Accordingly, the wafer moving system 27 can move the wafer in the isolation chamber 22 toward the xyz and the 。. The isolation chamber 22 has a bottom wall 162, and the The bottom wall 162 is formed with a hole 164 and has a first outer abutment surface 166. The temple seal 70 has a sealing plate 168, and the sealing plate 168 has a first abutment surface 170, and the second abutment The surface 170 is slidably abutted against the first abutment surface 166. The sealing plate 168 further has an inner hole 172 annularly disposed around the mandrel 60, and a first vacuum chamber 174 is formed therein. Between the first and second abutment surfaces 160, 170. In addition, a vacuum source is coupled to the first vacuum chamber 174. Figure 13 shows an exploded view of a portion of the wafer processing assembly 20, 20 A portion of the chamber 22, the labyrinth seal 70 and associated isolator assembly 25 are shown. As shown, the labyrinth seal 70 is formed by a sealing plate 68 and a support plate 169, and the support The plate 169 has a vacuum passage 173 in fluid communication with the vacuum chamber 174, and the vacuum chamber 174 is formed The first abutment surface 166 of the bottom wall 162 is in contact with the sealing plate 168 abutting surface 170. 34 200807522 The mandrel 60 and the hole 172 formed in the sealing plate 168 and the bottom wall 162 are also shown. The relationship of 164, in addition, also shows the relationship between a loading position 181 and the second processing position 186. As shown in Figures 14A-B and 15, the first or second abutment surfaces 166, 5170 may have a groove. 178, and the trench 178 forms a portion of the first vacuum chamber 174 between the first and second abutment surfaces 166 and 170. When the mandrel 60 is moved by the actuating mechanism, the chamber 174 is movable relative to the bottom wall 162. Adjacent to the inner bore 172, the sealing plate 168 can have a second groove 180, and a second vacuum 10 chamber 182 is formed between the second groove 180 and the mandrel 60. The second vacuum chamber 182 can be independently coupled to the vacuum source 176, and as shown in FIG. 15, the wafer moving system 27 includes a wafer support for holding the wafer 26 fixedly through the mobile system 27. Fixture 28. The wafer moving system 27 is configured to move the wafer 26 from the loading position 181 to a second processing position 186, whereby the processing position can be an alignment position 15 or can be positioned to be associated with the nozzle. Adjacent to 84. Referring to Figures 16A and 16B, the operation of the wafer moving system 27 will be described. The mandrel 60 is configured to move the wafer 26 from the loading position 181 to the processing position 186 in a plurality of directions. The isolation chamber 22 is disposed around at least a portion of the wafer moving system 27 to protect the mechanism of the wafer moving system 27 from the generated reactive gases when the wafer is processed. The chamber 22 has a bottom wall 162, and the bottom wall 162 has an elongated hole 164 for moving the mandrel 60 relative to the chamber 22, and the bottom abutment surface 166 of the bottom wall 162 can be located in the chamber 22. On the outer or inner surface. 17A-17B shows an exploded cross-sectional view of the isolator 25, and the isolator 25 35 200807522 Γ 4 = plate 216, and the nozzle plate 216 provides a mechanism for the 5 10 15 20 ^ slot source to be coupled to the lower slot 51. The nozzle plate 216 has a recess in which the nozzle of the nozzle assembly 84 is slidably received. The portion 218 further has a housing-recessed hole 22 for the light-emitting surface of the heating element 122. And the nozzle plate 216 allows the nozzle assembly 84 to be assembled without completely disassembling the wafer processing apparatus 2(). As shown in Figures 7 and 17C, the nozzle plate 216 has a plurality of holes and fixed locks that facilitate alignment of the various component discs. Accordingly, the nozzle assembly 84, the heating element 122, and the lower tank can be accurately positioned. + The first and the coffee diagrams show the majority of the mouthpieces 45, 49 connected to the mouth support member 221, and the support member 221 is fitted in the recess (10) of the nozzle plate 216. The simple nozzle 45 is positioned in the appropriate direction. . Since the nozzles 45 are preferably hand-held to their fuel source, the support member simplifies installation and does not require reworking of the isolator. - The nozzles are connected to the gas source 55 through a plurality of welded non-conical steel tubes 222 as shown in the 19th. To maintain rack stability, the gas source 55 is controlled by controller 52. As previously mentioned, the nozzles have a stainless steel inlet tube 224 having a very high aspect ratio. For example, an aspect ratio greater than or equal to 10: 1 is appropriate for both 仏 and 仏. Immediately disposed adjacent the lead-in portion 224 of the nozzle 45 is a backflushing flame suppression device 226, and the device 226 is a chamber 228 having a substantially larger space than the introduction portion 224. Disposed within the space is a porous stainless steel member 228' and the porous steel member 228 acts as a source that prevents the flame from passing upwardly through the nozzles 45, 49 and into the gas at the time of system failure. Confluence. As shown in Figures 20A and 20B, the aspect ratio of the nozzles 45 can vary depending on the fuel and oxidant used. Thus, when a high percentage of NF3 is used as an oxidant, the nozzles 45, 49 have a stainless steel introduction portion 224 having an aspect ratio greater than 4 〇: 5 1 ' and preferably 80:1. The nozzle 45 has a stainless steel body 225' and the stainless steel body 225 has a locating pin 227 that can bond the nozzle 45 to the support member 221. Disposed within the mass flow controller 52 is a normally open valve (not shown), and the valve can discharge CDA into the fuel supply source 10 when power is interrupted. In addition, if the system 20 needs to close the nozzles 45, 49, the normally open valve is actuated and the CDA having a pressure higher than the pressure of the fuel source can flow into the processing nozzles 45, effectively extinguishing the flames without The danger of system explosion. 21A and 21B show another method of joining the nozzles 15 to the separator 25, wherein a hole 232 is formed in the separator 25 or the nozzle plate 216. Disposed within the bore 232 are a plurality of nozzle sub-plates 234 having separate nozzles 45, and these nozzle sub-plates 234 are movable relative to one another in the fore-and-aft direction to relatively position the sub-plates within the isolator 25. The individual nozzle sub-plates 234 can be stacked next to one another to form a nozzle 20 assembly 84. 22A and 22B show separate nozzle sub-plates 234, and disposed on the inner surface 236 of the nozzle sub-plates 234 are a plurality of grooves 238 that serve as a plurality of fluid chambers 240. These fluid chambers 240 are coupled to a source of vacuum or pressurized gas (not shown) and may be used to split the reactive gas product that may be leaked from the chamber 22 200807522 during processing of the wafer. It can be seen that an inert or oxygen-containing gas can be supplied to the nozzle plate and flow through the hole 232 to the isolator. Fig. 22B is a view showing the cross-face 5 of the nozzle sub-plate shown in Fig. 22A. As shown, the structure of the high aspect ratio introducing portion η# and the back-blowing flash suppressing device 226 can be made therein. The nozzle is still positioned in the turntable work to reposition the nozzle relative to the edge of the wafer. These components significantly reduce the cost of the assembly and increase the reliability of the overall system. In operation, fuel is supplied to the nozzles 45 by the mass flow 10 controller 52 via the backflush flame suppression device 226. The vacuum source creates a vacuum in the vacuum chamber to prevent corrosion of the reactive reactive gas from passing through the nozzle assembly 84°. Figures 23A and 23B show an ignition system that can ignite the nozzles 45 and 49 of the nozzle assembly. 78, and the ignition system 78 has an optically 15 transparent or sapphire thermal igniter 242, and the thermal igniter 242 has a recessed aperture 244. The hot body igniter 242P is highly chemical resistant and has no particle formation. A heating element 246 is disposed within the recessed aperture 244, and the heating element, which may be a pt:R element, may be used to cause the hot body igniter to rise rapidly to a point where the fourth fuel contacts the thermal ignition 242. A predetermined temperature of a fuel oxide mixed compound. As shown in Fig. 23B, the ceramic thermal igniter 242 can be physically and optically coupled to a laser diode 252. In this configuration, the laser diode 252 can create photons that pass through the interior of the recessed aperture 244, and these photons will strike the heating element 246 and thereby create a reliable ignition system. Or 38 200807522, the hot body igniter 242 can be coated on an inner or outer surface with a material that increases photon absorption at the wavelengths considered. Disposed at the distal end of the elongate recess 244 is the heating element 246, and the heating element 246 can be electrically coupled to a power source that can be used to provide current to heat the heating element. Alternatively, the component can be heated in an inductive manner. As shown in Figures 24 and 25B, an air knife 25 is operatively disposed between an ignition nozzle assembly 248 and the nozzle assembly 84. The air knife 250 is in fluid communication with a CDA or inert gas source, and the firing nozzle assembly 248 10 is operatively coupled to a fuel source 52 and may have a sapphire nozzle tip 252 as previously described. In operation, the system for generating a cleaning flame required to process the wafer 26 includes placing the heating element 246 in an ignition assembly 78 and causing the heating element 246 to heat up to cause the assembly 78 Arrived at an ignition temperature. 15 The gas is then passed through a firing nozzle assembly 248 at a first gas flow rate and a parent fire is ignited by the ignition assembly 78. A plurality of nozzles of a nozzle assembly 84 are then passed through the parent flame to ignite the majority of the flames from the nozzles. After the majority of the nozzles of the nozzle assembly 84 have ignited, an air dam is passed in front of the parent flame by actuating the air knife 250. Next, a non-combustible gas is passed through the ignition nozzle assembly 248 at a predetermined flow rate of twenty-two. Accordingly, the second predetermined flow rate can be greater than the fuel flow rate through the nozzle, and this prevents backflushing into the ignition system and into the apparatus. The air knife 250 can be used to extinguish the female fire without interrupting the processing of the flame. See Figure 26 for another cleaning system. 39 200807522 In the system shown in Figures 23A and 23B, the ignition system includes a nozzle 248 for injecting fuel into the vicinity of the nozzle assembly 84. This nozzle 248 produces a plasma that is ignited by a very high intensity laser 256, and the ignition system can be separated by shutting off the plasma gas source or moving the laser 256 away. 5, as shown in Fig. 27, optical analysis electronics 208 is coupled to a fiber optic coupler 210, and the fiber coupler 210 is disposed in an upper section 38 of the isolator 25 to receive photons emitted by the reactive programs. The optical analysis electronics 208 can be used to observe and analyze reactive procedures to detect the presence of reactive species and/or the relative concentrations of reactive species. In another mode of this property, optical emission spectroscopy can be used to infer the endpoint of the money based on the observed product and/or reactive species in the region as the chemical reaction occurs. An FTIR gas analysis system 212 coupled to the FTIR control electronics 214 is in line with an exhaust system for analyzing the effluent of the gas 15 exhausted by the isolator 25 using an FTIR technique, again from the FTIR gas analysis system 212 and The information of the FTIR control electronics 214 is used to determine the "health" and condition of the reactive gas delivery system and may also perform endpoint detection. For the FTIR technique, the exhaust stream 204 flows through an optical chamber containing an infrared (ir) source and a detector. A dedicated controller and a host computer (not shown) operate the 2 气体 gas chamber. Figure 27 shows a flame sensing system used in the wafer processing system of Figure 1A, in which a nozzle plate 216 supporting a nozzle assembly 84 having processing nozzles 45 and 49 is shown. Pointed at the nozzles 45 and 49 is a CCD spectral imager 260, and the spectral imager can receive the emissions from the nozzles and the milk fire 40 200807522 flame. Figure 28 shows an intensity map of a particularly relevant spectrum, whereby the figure shows a wavelength between 200 and 400 nm. As shown, the wavelength curve between 3〇2 and 32411111 varies depending on the number of ignited flames. From this, it can be seen that by analyzing the spectral output, the system can determine the quality and quantity of the number of fires generated by the system. The relevant spectral region for flame sensing using a gas mixture of Η2 and Ο2 is between about 300 and 325 nm, and the emitter at about 3 〇 9 nm is from an intermediate 〇H species produced in the flame. . 10 It can be seen that the mass flow controller 52 of the present system can be connected to the spectral imager 260. Therefore, it can be seen that the system determines that one or more nozzles are not properly transmitted, and the system will send an error signal and can 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In the case of scales, various changes, modifications, and variations of the invention are possible. BRIEF DESCRIPTION OF THE DRAWINGS 3 Figure 1A-1C is a cross-sectional view showing a cross-sectional view of a system for concentric wafer processing operations; and Figure 2 is a top plan view showing the exchange/centering and processing position of a wafer in a processing chamber. Figure 3 is a side elevational view showing the exchange/centering and processing position of a wafer in a processing chamber; 41 200807522 Figure 4A shows a side view of the relationship between a labyrinth seal assembly and a processing chamber and fixture assembly; Figure 4B shows a top cross-sectional view of the relationship between a labyrinth seal assembly and a process chamber and fixture assembly; 5 Figure 5 is a side cross-sectional view of the isolation chamber shown in Figure 1A; The figure shows a top view of a plurality of nozzle bodies relative to the edge of a wafer, and FIGS. 6B to 6F are side views showing inclined nozzles at a bevel area of the wafer; 10 Figures 7 to 8G are pre-processed and post-processed wafers Cross-sectional view; Figure 9A-9C is a side view showing another nozzle structure at a bevel area of the wafer; Figure 10 is shown at two different rotational positions relative to an aligned position within the exchange/centering device Schematic representation of unaligned wafers 15-11-12B shows the optical inspection system of the present invention in detail; FIG. 13 is an exploded cross-sectional view showing one of the processing chamber and the isolation assembly shown in FIG. 1; FIGS. 14A and 14B are Fig. 3 is a cross-sectional view of the sealing mechanism of the system shown in Fig. 3; Fig. 15 is a perspective sectional view of the sealing mechanism shown in Figs. 14A and 14B, and Figs. 16A and 16B are cross sections of the system shown in Fig. 3. Figure 17A-17C is an exploded view of the isolation assembly shown in Figure 13; Figures 18A and 18B are perspective views of the nozzle assembly of Figure 17A; 42 200807522 5 Figures 19A and 19B show available at 18A a nozzle used in the nozzle assembly of Fig. 18B; Figs. 20A and 20B show another nozzle that can be used in the nozzle assembly of Figs. 18A and 18B; Figs. 21A and 21B show another nozzle assembly; 22A and 22B are diagrams showing the nozzle sub-plates shown in Figs. 21A and 21B; Figs. 23A and 23B are cross-sectional views showing another ignition assembly of the present invention; and Figs. 24 to 25B are views showing the ignition and nozzle assembly. Side view; • Figure 26 is a perspective view of another clean ignition assembly; 10 Figure 27 is for the crystal of Figure 1A A top view of the flame sensing system in the circular processing system; and Figures 28 and 29 show the responses detected by the flame sensing system. 43 200807522 [Description of main component symbols] 10...Substrate processing method 41...Exhaust space 12...Combustion flame 45...First nozzle 13...High oxygen environment 46...Support member 15...Micrometer 47...Gas line 16 ...top pin 48...first channel; first gas line 17...device front end module 49...second nozzle; third gas controller 18 ·. base ·inverse surface 51...lower slot 19... Robot arm and pre-aligner station 52... mass flow controller; fuel source 20... locker 53... second channel; second gas line 20, 20'... wafer edge area processing system 55... Fluorinated nitrogen gas source 21...Processing gas 56...Exhaust unit;Exhaust system 22...Processing chamber 58···Cooling water 24···Diffuser 60...Clamping mandrel 25...Isolation 61... inside baffle member 26... wafer 03... outer baffle member 27... wafer transfer alignment module or system 66... reaction byproduct 28... wafer refresher 67. .. space 30... top surface 70... labyrinth seal 31... vacuum pump 72... CDA or oxygen-containing gas 32... bottom surface 74... labyrinth seal plate 33... edge region 76.... bottom surface 38... on Section 78...Ignition System 39...Lower Section 79···Channel 44 200807522 82...heating substrate holder 126...heating power supply;ignition power supply 83...wire 128...completely covering film 84...nozzle assembly 129...film, 87 ...heating line 11 ·earing chicks; back side slanting do not film 88...upper blowing space 131...argon or CDA gas source 89...breaking jet 132.··third gas line 92···first blowing Washing channel 134... mounting position; fourth gas line 93... first gas line 136... processing position 94... purge gas line 140... controller 96... purge gas source 142... reaction byproduct 98. The second gas line 148...the gas line 100...the inner baffle 162...the bottom wall 102...the first gas controller 164...the hole 104...the outer baffle 166···the first abutment surface 106...the first Two gas controllers 168...sealing plates 108...second purging channels 169...support plates 110...common mixed gas lines 170...second abutting surfaces 112...lower inner baffles 172... Inner hole 114... lower purge space 173... vacuum passage 116... exhaust hole 174... first vacuum chamber 118... lower outer deck 176... Vacuum source 122...heating element 178···trench 124··air blowing device 180...second groove 125··. IR heating power source 181...loading position 45 200807522 182...second vacuum chamber 227...positioning pin 186... Two processing positions 228... chamber; porous stainless steel member 200... measuring window 232... hole 202... edge position 234... nozzle sub-plate 204... first position; exhaust stream 236... inner surface - 206. .. second wafer position 238... trenches 208... optical analysis electronics 240... fluid chamber 210... fiber optics | coupler 242... ceramic body igniter 212...Fm (gas analysis) system 244... Inner recess 214...FTIR control electronics 246...heating element 216...nozzle plate 248...ignition nozzle assembly 218..recess 250...air knife 220...second recess 252...laser diode Nozzle end 221...reading member 256...laser 222...welding stainless steel tube 260...spectral imager φ 224...introduction part 262...magnifying glass 225...stainless steel body; turntable • 226...backflushing Flash flame suppression device 264...optical system 46

Claims (1)

200807522 X. Patent application scope: 1. A wafer processing apparatus comprising: a processing chamber; a movable wafer supporting structure; 5. an isolating member having a nozzle manifold; a clean flame ignition system, A reactive gas from the nozzle manifold is ignited to produce a reactive flame; and a gas flow control system is provided to regulate the flow of reactive gases to the nozzle manifold. 10. 2. The device of claim 1, wherein a movable support structure moves the wafer toward the xyz and xenon directions. 3. The device of claim 1, wherein the movable wafer support structure moves the wafer from a first loading position to a second processing position within the isolation member. 15. The apparatus of claim 1, wherein the cleaning ignition system package φ comprises a ceramic thermal igniter. 5. The apparatus of claim 1, further comprising a spectroscopic analysis system for monitoring the spectrum of the reactive flame at the time of processing a wafer. 6. The apparatus of claim 5, wherein the spectral analysis system calculates an area of a spectral output between a pair of predetermined wavelengths. 7. The device of claim 1, wherein the nozzle manifold comprises a plurality of nozzles and different reactive gases are fed into the nozzles. 8. The apparatus of claim 1, wherein the gas flow system provides an oxygen-rich ambient gas to the processing chamber. 47 200807522 9. The device of claim 8, wherein the gas flow system provides a flow inhibiting gas. 10. The device of claim 1 further includes an exhaust system. 11. The apparatus of claim 1, further comprising a wafer inspection system for inspecting the edge of the crystal. 12. The device of claim 11, wherein the wafer inspection system utilizes thin film spectral reflectivity. 13. The apparatus of claim 1, further comprising a labyrinth seal in combination with the movable wafer support structure to seal the processing chamber. 10 14· A system for processing a wafer, comprising: a processing chamber; a four-axis wafer support structure; a plurality of reactive gas nozzles; and a reactive gas source coupled to the nozzles, and the reactivity 15 The gas source has an automatic flow shut-off system. 15. The system of claim 14 includes a clean flame ignition system. 16. The system of claim 14 further comprising a flame quality control system for monitoring the output of the flame. The system of claim 16 wherein the flame quality control system comprises a spectral fingerprinting system for inspecting the quality of the plurality of reactive gas nozzles. 18. The system of claim 16, wherein the spectral fingerprinting system determines whether the energy output of the flame at a predetermined frequency is within a limit of 48 200807522. 19. The substrate edge processing device comprises: a member for holding a substrate; a spacer member having a nozzle manifold and an exhaust air extending from the substrate edge of the nozzle manifold; wherein the P is damaged and the exhaust air is extended The movable supporting structure is configured to move the substrate toward the four-axis direction to be disposed on the substrate and the periphery of the portion; and the sealing member of the movable supporting structure is disposed on the movable support 20·15 between. Structure and Processing Chamber = Substrate edge treatment package of claim 19 is fluidically connected to a vacuum source. The sealing member comprises a plate having a groove of a middle and a middle. The substrate edge treatment of the second aspect of the patent is claimed, wherein the current plate has a hole for the structure of the support structure, and the second groove is combined with the vacuum source. 20 a substrate processing apparatus for treating a substrate with a combustion flame of hydrogen and a non-oxygen oxidant, comprising: a processing chamber for accommodating the substrate and defining a clean environment for the combustion flame Processing a nozzle assembly that is positioned within the processing chamber to direct the combustion flame to the substrate; 49 200807522 A fuel and oxidant source operatively coupled to the processing chamber; an ignition assembly a ceramic hot body igniter formed with a recessed hole; 5 a heating element disposed within the recessed hole; a means for heating the heating element; and an ignition nozzle assembly An ignition source is operatively coupled to the fuel assembly, and the ignition assembly can draw an initial combustion flame from the processing nozzle assembly within a predetermined distance. 10. The substrate processing apparatus for treating a substrate with a combustion flame according to claim 22, wherein the thermal igniter comprises a sapphire body. 24. The substrate processing apparatus for treating a substrate with a combustion flame according to claim 22, wherein the thermal igniter comprises an optically transparent 15 Tauman. 25. The substrate processing apparatus for processing a substrate with a combustion flame according to claim 22, wherein the heating element is electrically connected to a power source. 26. The substrate processing apparatus for processing a substrate by a combustion flame according to claim 22 of the patent application, further comprising a power source for applying an electromagnetic 20 wave to the heating element. 27. The substrate processing apparatus for processing a substrate using a combustion flame according to claim 26, wherein the power source is a laser or a laser diode. 28. The substrate processing apparatus for processing a substrate 50 by using a combustion flame according to claim 22, further comprising a power source for applying an electromagnetic wave to the heating element. 29. The substrate processing apparatus for treating a substrate with a combustion flame according to claim 22, wherein the processing chamber maintains a substantially atmospheric pressure. 5: The substrate processing apparatus for treating a substrate with a combustion flame according to claim 22, wherein the ceramic has a melting temperature of more than 3000 °K. 31. An ignition assembly comprising: a sapphire body; a heating element coupled to the sapphire body; a power source for applying an electromagnetic wave to the heating element; and an ignition nozzle An assembly is disposed adjacent the sapphire body and the nozzle assembly is coupled to a fuel source. 32. The ignition assembly of claim 31, wherein the sapphire body 15 has an inner chamber, and wherein the heating element is disposed within the inner chamber. 33. The ignition assembly of claim 31, wherein the power source is a laser diode. 34. The ignition assembly of claim 33, wherein the power source is a laser. 20 35. The ignition assembly of claim 32, wherein the power source is a current source. 36. The ignition assembly of claim 31, wherein a power source transmits a plurality of photons at a predetermined frequency and the sapphire body is transparent at the predetermined frequency. The ignition assembly of claim 31, wherein the ignition nozzle generates a gas jet along a first line, and wherein the sapphire system is disposed at a first predetermined distance from the line. 38. The ignition assembly of claim 37, further comprising at least one process 5 gas nozzle, and the process gas nozzle is disposed at a second predetermined distance from the line. 39. The ignition assembly of claim 38, further comprising an air knife disposed between the ignition assembly and the process gas nozzle. 40. A method of igniting a flame, comprising: 10 disposing a heating element in an ignition assembly; heating the heating element to heat the ignition assembly to a predetermined ignition temperature; Flow passes through the ignition nozzle and through the ignition assembly to ignite a flame; and 15 passes the flame through a plurality of nozzles to ignite the majority of the processing flame by the nozzle. 41. The method of igniting a flame as claimed in claim 40, further comprising passing an air dam through the front of the first flame. 42. The method of igniting a flame as claimed in claim 40, further comprising passing the non-combustible gas through the ignition nozzle at a second predetermined flow rate. 43. A method of igniting a flame as in claim 42 wherein the second predetermined flow rate is greater than the first predetermined flow rate. 44. A wafer processing system comprising: a device for processing a wafer; 52 200807522 a wafer moving system having a mandrel that moves the wafer toward χ, y, z, and θ; a chamber disposed around a portion of the wafer moving system, the chamber having a wall defining a hole and having a first abutment surface 5; a sealing plate having a second abutting surface, and The sealing plate has an inner hole annularly disposed around the mandrel; a first vacuum chamber is formed between the first and second abutting surfaces; and 10 - a vacuum source, First vacuum chamber connector. 45. The wafer processing system of claim 44, wherein the first abutment surface has a first trench, and wherein the first vacuum chamber is formed on the first trench and the second abutment surface between. 46. The wafer processing system of claim 44, wherein the second abutting surface has a first trench, and wherein the first vacuum chamber is formed in the first trench and the first abutting Between the surfaces. 47. The wafer processing system of claim 44, wherein the inner bore has a second groove and a second vacuum chamber is formed between the second groove and the mandrel. The wafer processing system of claim 47, wherein the second vacuum chamber is connected to the vacuum source. 49. The wafer processing system of claim 44, wherein the wafer moving system comprises a wafer support fixture. 50. The wafer processing system of claim 44, wherein the wafer transfer 53 200807522 motion system moves the wafer from a first mounting position to a second processing position. 51. The wafer processing system of claim 44, wherein the means for processing the wafer comprises one of a plasma nozzle, a flame nozzle, a fluid nozzle, and a combination thereof. 52. The wafer processing system of claim 44, further comprising a laser micrometer operatively coupled to the wafer moving system. 53. The wafer processing system of claim 52, wherein the laser micrometer is positioned within the chamber to detect an edge of the wafer. The wafer processing system of claim 44, wherein the hole is an elongated hole. 55. A wafer processing system comprising: a wafer processing mechanism, a wafer moving system having a mandrel for moving a wafer in a plurality of directions from a loading position to a processing position; an isolation chamber Is disposed around a portion of the wafer moving system, and the chamber has a wall forming an inner hole, and the wall has a first abutting surface; a sealing plate having a first The connecting surface slidably couples the second abutting surface of the second surface, and the second abutting surface has a first groove, and a first vacuum chamber is formed between the first groove and the first abutting surface Further, the sealing plate has a hole annularly disposed around the mandrel, and the hole and the mandrel form a second vacuum chamber; and a vacuum source is coupled to the first and second vacuum chambers. 54. The wafer processing system of claim 55, wherein the sealing plate forms a seal with the wall having a helium leak rate of less than about 1 〇 x 0_6 atm-cc/s. 57. The wafer processing system of claim 55, wherein the wafer shifting system comprises a wafer supply jig. 58. The wafer processing system of claim 55, wherein the wafer transfer system moves the wafer from the first mounting position to the wafer processing position. 59. The wafer processing system of claim 55, wherein the wafer processing mechanism comprises one of a plasma nozzle, a flame nozzle, a fluid processing nozzle, and a combination thereof. 6. The wafer processing system of claim 55, wherein the isolation chamber encloses a corrosive ambient gas. 6L is the wafer processing system of claim 55, wherein the wafer shifting system moves the wafer in the X, y, z, and θ directions. Φ 62· — A wafer substrate processing system, comprising: a wafer shifting system, having a mandrel that can move the wafer in a plurality of directions; 20 a processing chamber ′ for accommodating the substrate And an environment for defining a combustion flame of a hydrogen disk-non-oxygen oxidant, wherein the processing chamber maintains a substantially atmospheric pressure, and the processing chamber is disposed in a portion of the wafer moving system, and the processing chamber Having a "forming" hole having a first abutting surface; an eighty-hydrogen and non-oxygen oxidant source selectively coupled to the process 55 200807522; and a nozzle assembly positioned within the processing chamber to a combustion flame is guided to the substrate; a sealing plate having a second abutting surface slidably coupled to the first abutting surface, and the second abutting surface has a first groove, and one of the a first vacuum chamber is formed between the first groove and the first abutting surface, and further, the sealing plate has a hole annularly disposed around the mandrel, and the hole forms a second with the mandrel Vacuum chamber; and a vacuum source By the first and second vacuum chamber. The wafer substrate processing system of claim 62, wherein the nozzle assembly comprises two or more nozzles. 64. The wafer substrate processing system of claim 63, wherein the two or more nozzles are made of sapphire. 65. The wafer substrate processing system of claim 62, wherein the spray nozzle assembly comprises two or more nozzles, and wherein the two or more nozzles are held in a relative manner The top surface of the substrate is at an angle. 66. The wafer substrate processing system of claim 62, wherein the wafer movement system comprises a fixture. The wafer substrate processing system of claim 62, wherein the wafer moving system moves the wafer substrate from a first mounting position to a second processing position. 68. The wafer substrate processing system of claim 62, wherein the means for processing the wafer comprises one of a plasma nozzle, a flame nozzle, a fluid 56 200807522 processing nozzle, and combinations thereof. 69. The wafer substrate processing system of claim 62, further comprising a laser micrometer operatively coupled to the wafer movement system. 70. The wafer substrate processing system of claim 62, wherein the laser micrometer is positioned within the chamber to detect an edge of the wafer. 57