WO2008005539A3 - Apparatus for cleaning a wafer substrate - Google Patents
Apparatus for cleaning a wafer substrate Download PDFInfo
- Publication number
- WO2008005539A3 WO2008005539A3 PCT/US2007/015586 US2007015586W WO2008005539A3 WO 2008005539 A3 WO2008005539 A3 WO 2008005539A3 US 2007015586 W US2007015586 W US 2007015586W WO 2008005539 A3 WO2008005539 A3 WO 2008005539A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- chuck
- substrate
- center
- cleaning
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Abstract
A method and apparatus for dry chemical processing a wafer at atmospheric pressure is disclosed. The edge area of a substrate is placed in isolation from the remainder of the substrate. According to the present teachings, a method for centering a wafer on a rotatable chuck is provided. The method includes the steps of positioning a wafer adjacent to a micrometer. The wafer is then rotated and a plurality of wafer edge locations and rotational increments are measured. A center offset value for the value of the wafer center with respect to a chuck is calculated. The wafer is then moved with respect to a center position of the chuck.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81952106P | 2006-07-07 | 2006-07-07 | |
US60/819,521 | 2006-07-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008005539A2 WO2008005539A2 (en) | 2008-01-10 |
WO2008005539A3 true WO2008005539A3 (en) | 2008-03-06 |
Family
ID=38894891
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/015586 WO2008005539A2 (en) | 2006-07-07 | 2007-07-06 | Apparatus for cleaning a wafer substrate |
PCT/US2007/015589 WO2008005541A2 (en) | 2006-07-07 | 2007-07-06 | Clean ignition system for wafer substrate processing |
PCT/US2007/015551 WO2008005517A1 (en) | 2006-07-07 | 2007-07-06 | Processing chamber having labyrinth seal |
PCT/US2007/015556 WO2008005521A1 (en) | 2006-07-07 | 2007-07-06 | Wafer processing apparatus and method |
PCT/US2007/015588 WO2008005540A2 (en) | 2006-07-07 | 2007-07-06 | Method and apparatus for cleaning a wafer substrate |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/015589 WO2008005541A2 (en) | 2006-07-07 | 2007-07-06 | Clean ignition system for wafer substrate processing |
PCT/US2007/015551 WO2008005517A1 (en) | 2006-07-07 | 2007-07-06 | Processing chamber having labyrinth seal |
PCT/US2007/015556 WO2008005521A1 (en) | 2006-07-07 | 2007-07-06 | Wafer processing apparatus and method |
PCT/US2007/015588 WO2008005540A2 (en) | 2006-07-07 | 2007-07-06 | Method and apparatus for cleaning a wafer substrate |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200807522A (en) |
WO (5) | WO2008005539A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2504860C2 (en) * | 2008-04-22 | 2014-01-20 | Эрликон Трейдинг Аг, Трюббах | Method of making workpieces with ion-etched surface |
JP4672073B2 (en) * | 2008-08-22 | 2011-04-20 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing apparatus operation method |
DE112011102142T8 (en) * | 2010-06-25 | 2013-06-13 | Ulvac, Inc. | A film forming apparatus and method for maintaining a film forming apparatus |
KR101590661B1 (en) * | 2010-09-13 | 2016-02-01 | 도쿄엘렉트론가부시키가이샤 | Liquid processing apparatus, liquid processing method and storage medium |
CN113725131B (en) * | 2021-11-02 | 2022-02-08 | 西安奕斯伟材料科技有限公司 | Wafer pretreatment device and wafer defect detection method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6327517B1 (en) * | 2000-07-27 | 2001-12-04 | Applied Materials, Inc. | Apparatus for on-the-fly center finding and notch aligning for wafer handling robots |
KR20030090057A (en) * | 2002-05-21 | 2003-11-28 | 삼성전자주식회사 | Expose unit having alignment function and align method thereof |
KR20060057111A (en) * | 2004-11-23 | 2006-05-26 | 삼성전자주식회사 | Edge exposure apparatus for fabricating semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2954059B2 (en) * | 1997-01-09 | 1999-09-27 | 山形日本電気株式会社 | Edge rinse mechanism |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
JP3395696B2 (en) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | Wafer processing apparatus and wafer processing method |
JP4498503B2 (en) * | 1999-10-29 | 2010-07-07 | アプライド マテリアルズ インコーポレイテッド | Thin film forming apparatus and thin film forming method |
JP3581292B2 (en) * | 2000-03-22 | 2004-10-27 | 東京エレクトロン株式会社 | Processing device and processing method |
US6827814B2 (en) * | 2000-05-08 | 2004-12-07 | Tokyo Electron Limited | Processing apparatus, processing system and processing method |
US7371992B2 (en) * | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
WO2004100247A1 (en) * | 2003-05-12 | 2004-11-18 | Sosul Co., Ltd. | Plasma etching chamber and plasma etching system using same |
JP2006073590A (en) * | 2004-08-31 | 2006-03-16 | Toppan Printing Co Ltd | Surface cleaning method and apparatus |
KR100593740B1 (en) * | 2004-09-16 | 2006-06-28 | 삼성전자주식회사 | Method of removing native oxide film |
KR100568873B1 (en) * | 2004-11-30 | 2006-04-10 | 삼성전자주식회사 | Nozzle apparatus for stripping edge bead of wafer |
-
2007
- 2007-07-06 WO PCT/US2007/015586 patent/WO2008005539A2/en active Application Filing
- 2007-07-06 WO PCT/US2007/015589 patent/WO2008005541A2/en active Application Filing
- 2007-07-06 WO PCT/US2007/015551 patent/WO2008005517A1/en active Application Filing
- 2007-07-06 WO PCT/US2007/015556 patent/WO2008005521A1/en active Application Filing
- 2007-07-06 WO PCT/US2007/015588 patent/WO2008005540A2/en active Application Filing
- 2007-07-06 TW TW96124758A patent/TW200807522A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6327517B1 (en) * | 2000-07-27 | 2001-12-04 | Applied Materials, Inc. | Apparatus for on-the-fly center finding and notch aligning for wafer handling robots |
KR20030090057A (en) * | 2002-05-21 | 2003-11-28 | 삼성전자주식회사 | Expose unit having alignment function and align method thereof |
KR20060057111A (en) * | 2004-11-23 | 2006-05-26 | 삼성전자주식회사 | Edge exposure apparatus for fabricating semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO2008005517A1 (en) | 2008-01-10 |
TW200807522A (en) | 2008-02-01 |
WO2008005539A2 (en) | 2008-01-10 |
WO2008005541A2 (en) | 2008-01-10 |
WO2008005540A3 (en) | 2008-02-21 |
WO2008005521A1 (en) | 2008-01-10 |
WO2008005540A2 (en) | 2008-01-10 |
WO2008005541A3 (en) | 2008-02-21 |
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