EA201391295A1 - Подложка для фотоэлектрической ячейки - Google Patents
Подложка для фотоэлектрической ячейкиInfo
- Publication number
- EA201391295A1 EA201391295A1 EA201391295A EA201391295A EA201391295A1 EA 201391295 A1 EA201391295 A1 EA 201391295A1 EA 201391295 A EA201391295 A EA 201391295A EA 201391295 A EA201391295 A EA 201391295A EA 201391295 A1 EA201391295 A1 EA 201391295A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- substrate
- photoelectric cell
- mgo
- glass
- sio69
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000005329 float glass Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Объектом изобретения является подложка для фотоэлектрической ячейки, содержащая по меньшей мере одну пластинку из флоат-стекла, снабженную с одной стороны по меньшей мере одним электродом, отличающаяся тем, что указанное стекло имеет химический состав, содержащий следующие компоненты, при массовых содержаниях, изменяющихся в пределах, определенных ниже, %: SiO69-75, AlO0-3, CaO+MgO 11-16,2, MgO 0-6,5, NaO 9-12,4, KO 0-1,5.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1151937A FR2972446B1 (fr) | 2011-03-09 | 2011-03-09 | Substrat pour cellule photovoltaique |
PCT/FR2012/050485 WO2012146844A1 (fr) | 2011-03-09 | 2012-03-08 | Substrat pour cellule photovoltaïque |
Publications (2)
Publication Number | Publication Date |
---|---|
EA201391295A1 true EA201391295A1 (ru) | 2014-01-30 |
EA024896B1 EA024896B1 (ru) | 2016-10-31 |
Family
ID=45937415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201391295A EA024896B1 (ru) | 2011-03-09 | 2012-03-08 | Подложка для фотоэлектрической ячейки |
Country Status (10)
Country | Link |
---|---|
US (1) | US8940996B2 (ru) |
EP (1) | EP2683665B1 (ru) |
JP (1) | JP6050261B2 (ru) |
KR (1) | KR20140064713A (ru) |
CN (1) | CN103429544A (ru) |
CA (1) | CA2826465A1 (ru) |
EA (1) | EA024896B1 (ru) |
FR (1) | FR2972446B1 (ru) |
MX (1) | MX2013010220A (ru) |
WO (1) | WO2012146844A1 (ru) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX2012013163A (es) * | 2010-05-20 | 2013-03-21 | Cardinal Fg Company | Sustratos de vidrio para aplicaciones de alta temperatura. |
WO2013063290A1 (en) | 2011-10-25 | 2013-05-02 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9517966B2 (en) | 2011-10-25 | 2016-12-13 | Corning Incorporated | Glass compositions with improved chemical and mechanical durability |
RU2719857C2 (ru) | 2011-10-25 | 2020-04-23 | Корнинг Инкорпорейтед | Композиции стекла с повышенной химической и механической стойкостью |
CN104066695B (zh) | 2011-10-25 | 2019-02-12 | 康宁股份有限公司 | 具有改善的化学和机械耐久性的碱土金属铝硅酸盐玻璃组合物 |
US10273048B2 (en) | 2012-06-07 | 2019-04-30 | Corning Incorporated | Delamination resistant glass containers with heat-tolerant coatings |
CN104918895A (zh) * | 2012-12-07 | 2015-09-16 | 旭硝子株式会社 | 高透射性玻璃 |
US9707154B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9707155B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9839579B2 (en) | 2013-04-24 | 2017-12-12 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9603775B2 (en) | 2013-04-24 | 2017-03-28 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9713572B2 (en) | 2013-04-24 | 2017-07-25 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9707153B2 (en) | 2013-04-24 | 2017-07-18 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9717648B2 (en) | 2013-04-24 | 2017-08-01 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9849066B2 (en) | 2013-04-24 | 2017-12-26 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9700486B2 (en) | 2013-04-24 | 2017-07-11 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9717649B2 (en) | 2013-04-24 | 2017-08-01 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
US9700485B2 (en) | 2013-04-24 | 2017-07-11 | Corning Incorporated | Delamination resistant pharmaceutical glass containers containing active pharmaceutical ingredients |
WO2015000090A2 (de) | 2013-07-04 | 2015-01-08 | Saint-Gobain Glass France | Brandschutzglasscheibe und brandschutzverglasung |
KR101711527B1 (ko) * | 2014-05-30 | 2017-03-02 | 주식회사 엘지화학 | 화합물 반도체 및 그 제조 방법 |
US11680005B2 (en) * | 2020-02-12 | 2023-06-20 | Owens-Brockway Glass Container Inc. | Feed material for producing flint glass using submerged combustion melting |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2764596B1 (fr) * | 1997-06-17 | 1999-07-09 | Saint Gobain Vitrage | Composition de verre silico-sodo-calcique et leurs applications |
FR2765569B3 (fr) * | 1997-07-01 | 1999-07-16 | Saint Gobain Vitrage | Composition de verre de type silico-sodo-calcique |
JPH11135819A (ja) * | 1997-10-31 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 化合物薄膜太陽電池 |
US6844280B2 (en) * | 2000-03-06 | 2005-01-18 | Nippon Sheet Glass Company, Limited | Flat glass having high transmittance |
KR100847618B1 (ko) * | 2001-09-05 | 2008-07-21 | 니혼 이타가라스 가부시키가이샤 | 고 투과 글래스판 및 고 투과 글래스판의 제조방법 |
JP2003095691A (ja) * | 2001-09-21 | 2003-04-03 | Nippon Sheet Glass Co Ltd | 高透過ガラスおよびその製造方法 |
US7037869B2 (en) * | 2002-01-28 | 2006-05-02 | Guardian Industries Corp. | Clear glass composition |
JP2007238398A (ja) * | 2006-03-10 | 2007-09-20 | Nippon Sheet Glass Co Ltd | ソーダ石灰系ガラス組成物 |
US7560402B2 (en) * | 2006-10-06 | 2009-07-14 | Guardian Industries Corp. | Clear glass composition |
US8334452B2 (en) * | 2007-01-08 | 2012-12-18 | Guardian Industries Corp. | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
FR2911868B1 (fr) | 2007-01-26 | 2009-03-13 | Saint Gobain Emballage Sa | Procede de fabrication de verre |
US20080185041A1 (en) * | 2007-02-02 | 2008-08-07 | Guardian Industries Corp. | Method of making a photovoltaic device with antireflective coating containing porous silica and resulting product |
JP2008280189A (ja) * | 2007-05-08 | 2008-11-20 | Nippon Electric Glass Co Ltd | 太陽電池用ガラス基板およびその製造方法 |
WO2009028570A1 (ja) * | 2007-08-31 | 2009-03-05 | Asahi Glass Company, Limited | ガラス板およびその製造方法ならびにtftパネルの製造方法 |
FR2921356B1 (fr) * | 2007-09-21 | 2011-01-21 | Saint Gobain | Composition de verre silico-sodo-calcique |
US8671717B2 (en) * | 2008-03-06 | 2014-03-18 | Guardian Industries Corp. | Photovoltaic device having low iron high transmission glass with lithium oxide for reducing seed free time and corresponding method |
GB0810525D0 (en) * | 2008-06-09 | 2008-07-09 | Pilkington Group Ltd | Solar unit glass plate composition |
JP5365983B2 (ja) * | 2008-06-17 | 2013-12-11 | 日本電気硝子株式会社 | 太陽電池用導電膜付ガラス基板 |
EP2299536A4 (en) * | 2008-06-17 | 2011-12-21 | Nippon Electric Glass Co | SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL |
JP2010073551A (ja) * | 2008-09-19 | 2010-04-02 | Nippon Electric Glass Co Ltd | 色素増感型太陽電池用基板および色素増感型太陽電池用酸化物半導体電極 |
WO2010023419A1 (fr) * | 2008-09-01 | 2010-03-04 | Saint-Gobain Glass France | Procede d'obtention de verre et verre obtenu |
US20100122728A1 (en) * | 2008-11-17 | 2010-05-20 | Fulton Kevin R | Photovoltaic device using low iron high transmission glass with antimony and reduced alkali content and corresponding method |
FR2942623B1 (fr) * | 2009-02-27 | 2012-05-25 | Saint Gobain | Feuille de verre |
DE102009050987B3 (de) * | 2009-05-12 | 2010-10-07 | Schott Ag | Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
US9637408B2 (en) * | 2009-05-29 | 2017-05-02 | Corsam Technologies Llc | Fusion formable sodium containing glass |
US8647995B2 (en) * | 2009-07-24 | 2014-02-11 | Corsam Technologies Llc | Fusion formable silica and sodium containing glasses |
JP5642363B2 (ja) * | 2009-08-14 | 2014-12-17 | 日本板硝子株式会社 | ガラス基板 |
EP2805929A1 (en) * | 2009-10-19 | 2014-11-26 | Asahi Glass Company, Limited | Glass plate for substrate, method for producing same, and method for producing tft panel |
MX2012013163A (es) | 2010-05-20 | 2013-03-21 | Cardinal Fg Company | Sustratos de vidrio para aplicaciones de alta temperatura. |
-
2011
- 2011-03-09 FR FR1151937A patent/FR2972446B1/fr not_active Expired - Fee Related
-
2012
- 2012-03-05 US US13/411,856 patent/US8940996B2/en not_active Expired - Fee Related
- 2012-03-08 MX MX2013010220A patent/MX2013010220A/es active IP Right Grant
- 2012-03-08 KR KR1020137023645A patent/KR20140064713A/ko active IP Right Grant
- 2012-03-08 EP EP12713214.0A patent/EP2683665B1/fr not_active Not-in-force
- 2012-03-08 JP JP2013557162A patent/JP6050261B2/ja not_active Expired - Fee Related
- 2012-03-08 EA EA201391295A patent/EA024896B1/ru not_active IP Right Cessation
- 2012-03-08 CN CN2012800122953A patent/CN103429544A/zh active Pending
- 2012-03-08 CA CA2826465A patent/CA2826465A1/fr not_active Abandoned
- 2012-03-08 WO PCT/FR2012/050485 patent/WO2012146844A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US8940996B2 (en) | 2015-01-27 |
WO2012146844A1 (fr) | 2012-11-01 |
KR20140064713A (ko) | 2014-05-28 |
CA2826465A1 (fr) | 2012-11-01 |
FR2972446A1 (fr) | 2012-09-14 |
FR2972446B1 (fr) | 2017-11-24 |
US20120234368A1 (en) | 2012-09-20 |
EP2683665A1 (fr) | 2014-01-15 |
MX2013010220A (es) | 2013-10-25 |
CN103429544A (zh) | 2013-12-04 |
JP6050261B2 (ja) | 2016-12-21 |
EP2683665B1 (fr) | 2018-05-30 |
EA024896B1 (ru) | 2016-10-31 |
JP2014508708A (ja) | 2014-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG MD TJ TM |
|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): RU |