HK1213692A1 - 用於 光伏器件的鉬基材 - Google Patents

用於 光伏器件的鉬基材

Info

Publication number
HK1213692A1
HK1213692A1 HK16101515.6A HK16101515A HK1213692A1 HK 1213692 A1 HK1213692 A1 HK 1213692A1 HK 16101515 A HK16101515 A HK 16101515A HK 1213692 A1 HK1213692 A1 HK 1213692A1
Authority
HK
Hong Kong
Prior art keywords
cigs
photovoltaic devices
molybdenum substrates
molybdenum
substrates
Prior art date
Application number
HK16101515.6A
Other languages
English (en)
Inventor
Takashi Iwahashi
Jun Lin
Stephen Whitelegg
Zugang Liu
Cary Allen
Stuart Stubbs
Paul Kirkham
Original Assignee
Nanoco Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoco Technologies Ltd filed Critical Nanoco Technologies Ltd
Publication of HK1213692A1 publication Critical patent/HK1213692A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
HK16101515.6A 2012-11-09 2016-02-11 用於 光伏器件的鉬基材 HK1213692A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261724785P 2012-11-09 2012-11-09
PCT/IB2013/003106 WO2014072833A2 (en) 2012-11-09 2013-11-08 Molybdenum substrates for cigs photovoltaic devices

Publications (1)

Publication Number Publication Date
HK1213692A1 true HK1213692A1 (zh) 2016-07-08

Family

ID=50439418

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16101515.6A HK1213692A1 (zh) 2012-11-09 2016-02-11 用於 光伏器件的鉬基材

Country Status (7)

Country Link
US (1) US20140283913A1 (zh)
EP (1) EP2917941A2 (zh)
JP (1) JP6248118B2 (zh)
KR (1) KR101747395B1 (zh)
CN (1) CN104813482B (zh)
HK (1) HK1213692A1 (zh)
WO (1) WO2014072833A2 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9355864B2 (en) * 2013-08-06 2016-05-31 Tel Nexx, Inc. Method for increasing adhesion of copper to polymeric surfaces
CN105355676B (zh) * 2015-11-18 2017-11-03 北京四方创能光电科技有限公司 一种柔性cigs薄膜太阳电池的背电极结构
EP3417087A1 (en) * 2016-02-19 2018-12-26 Merck Patent GmbH Deposition of molybdenum thin films using a molybdenum carbonyl precursor
US9859450B2 (en) * 2016-08-01 2018-01-02 Solar-Tectic, Llc CIGS/silicon thin-film tandem solar cell
CN106433646B (zh) * 2016-11-30 2019-09-24 南方科技大学 一种光转化量子点、太阳能聚光器和太阳能聚光装置
CN108511537B (zh) * 2018-06-26 2022-11-29 上海祖强能源有限公司 一种太阳能电池
CN109860329B (zh) * 2019-01-11 2020-12-22 惠科股份有限公司 感光器件、x射线探测器及医用设备
CN111640820B (zh) * 2020-06-02 2023-06-13 东北师范大学 一种简便的用于改善铜锌锡硫硒薄膜光伏器件背接触的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999066505A2 (en) * 1998-06-18 1999-12-23 Koninklijke Philips Electronics N.V. Rewritable optical information medium
JP2006080371A (ja) * 2004-09-10 2006-03-23 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
JP2006165386A (ja) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法
US7875945B2 (en) * 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
US8613973B2 (en) * 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
US20100140098A1 (en) * 2008-05-15 2010-06-10 Solopower, Inc. Selenium containing electrodeposition solution and methods
AT10578U1 (de) * 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
KR101081194B1 (ko) * 2009-06-16 2011-11-07 엘지이노텍 주식회사 태양전지의 제조장치, 이를 이용한 태양전지의 제조방법
US20110259395A1 (en) * 2010-04-21 2011-10-27 Stion Corporation Single Junction CIGS/CIS Solar Module
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US20120234392A1 (en) * 2011-03-17 2012-09-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JP2016502759A (ja) 2016-01-28
KR20150082525A (ko) 2015-07-15
US20140283913A1 (en) 2014-09-25
KR101747395B1 (ko) 2017-06-14
WO2014072833A9 (en) 2014-07-17
EP2917941A2 (en) 2015-09-16
WO2014072833A3 (en) 2014-09-04
CN104813482B (zh) 2017-12-19
JP6248118B2 (ja) 2017-12-13
CN104813482A (zh) 2015-07-29
WO2014072833A2 (en) 2014-05-15

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