JP2016502759A - Cigs光起電力デバイス用モリブデン基板 - Google Patents
Cigs光起電力デバイス用モリブデン基板 Download PDFInfo
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 203
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 201
- 239000011733 molybdenum Substances 0.000 title claims abstract description 201
- 239000000758 substrate Substances 0.000 title abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000006096 absorbing agent Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000002105 nanoparticle Substances 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000002243 precursor Substances 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000011358 absorbing material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims 4
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 description 56
- 239000011669 selenium Substances 0.000 description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 21
- 239000002245 particle Substances 0.000 description 19
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
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- 238000001228 spectrum Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
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- 239000011593 sulfur Substances 0.000 description 1
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- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
全体として、本発明は、PVデバイス及び該PVデバイスを溶液ベースで製造する方法を開示するものである。このようなデバイスは、一般的に、支持体、モリブデン基板及び該モリブデン基板に配備された光吸収材の層を含んでいる。典型的には、光吸収材は、CIGS型材料であり、例えば、AB1−xB’xC2−yC’yで表される材料で、Aは、Cu、Zn、Ag又はCdであり、B及びB’は、独立してAl、In又はGaであり、C及びC’は独立してS、Se又はTeであり、0≦x≦1及び0≦y≦2である。
この明細書で用いられる「CIGS」、「CIS」及び「CIGS型」の語は、互換可能であって、式AB1−xB’xC2−yC’yで表される材料であって、Aは、Cu、Zn、Ag又はCdであり、B及びB’は、独立してAl、In又はGaであり、C及びC’は独立してS、Se又はTeであり、0≦x≦1及び0≦y≦2である。例として、CuInSe2、CuInxGa1−xSe2、CuGa2Se2、ZnInSe2、ZnInxGa1−xSe2、ZnGa2Se2、AgInSe2、AgInxGa1−xSe2、AgGa2Se2、CuInSe2−ySy、CuInxGa1−xSe2−ySy、CuGa2Se2−ySy、ZnInSe2−ySy、ZnInxGa1−xSe2−ySy、ZnGa2Se2−ySy、AgInSe2−ySy、AgInxGa1−xSe2−ySy及びAgGa2Se2−ySy、0≦x≦1及び0≦y≦2が挙げられる。
Claims (34)
- 支持体と、
第1の低密度モリブデン層と、
前記低密度モリブデン層の上及び該層に近接して堆積された光吸収材料の層とを具える、構造。 - 第1の低密度モリブデン層は、約2.0×10−4Ω-cmよりも大きい抵抗を有している請求項1の構造。
- 第1の低密度モリブデン層は、約3.0×10−4Ω-cmよりも大きい抵抗を有している請求項1の構造。
- 第1の低密度モリブデン層は、約4.0×10−4Ω-cmよりも大きい抵抗を有している請求項1の構造。
- 第1の低密度モリブデン層は、約5.0×10−4Ω-cmよりも大きい抵抗を有している請求項1の構造。
- 第1の低密度モリブデン層は、約500nmより大きい厚さを有している請求項1の構造。
- 第1の低密度モリブデン層は、約800nmより大きい厚さを有している請求項1の構造。
- 高密度モリブデン層をさらに具えている請求項1の構造。
- 高密度モリブデン層は、低密度モリブデン層と支持体との間に位置する請求項8の構造。
- 高密度モリブデン層は、約0.5×10−4Ω-cmよりも小さい抵抗を有している請求項8の構造。
- 高密度モリブデン層は、約0.2×10−4Ω-cmよりも小さい抵抗を有している請求項8の構造。
- 高密度モリブデン層及び低密度モリブデン層は、約0.5×10−4Ω-cmよりも小さい抵抗を有する複層モリブデン層として複合化される請求項8の構造。
- 支持体に近接して配備された第2の低密度モリブデン層をさらに具えている請求項8の構造。
- 高密度モリブデン層と支持体との間に配置された第2の低密度モリブデン層をさらに具えている請求項8の構造。
- 第1の低密度モリブデン層、高密度モリブデン層及び第2の低密度モリブデン層は、約0.5×10−4Ω-cmより小さい抵抗を有する複層モリブデン層として複合化される請求項8の構造。
- 低密度モリブデン層は、光吸収材料の中に発生した汚染物質を吸収するために配備される請求項1の構造。
- 汚染物質は、有機汚染物質である請求項16の構造。
- 汚染物質は、構造が加熱されて光吸収層が溶融されるときに発生する請求項16の構造。
- 低密度モリブデン層は、検知できる量のカーボンを含んでいる請求項1の構造。
- 光吸収層は、式AB1−xB’xC2−yC’yで表され、Aは、Cu、Zn、Ag又はCdであり、B及びB’は、独立してAl、In又はGaであり、C及びC’は独立してS、Se又はTeであり、xは0≦x≦1、yは0≦y≦2である材料を含んでいる請求項1の構造。
- 光起電力デバイスを製造する方法であって、
低密度モリブデン層を支持体に堆積し、
前記低密度モリブデン層の上に、ナノ粒子及び少なくとも一種の有機成分を含む光吸収体層前駆体を堆積することを含み、前記ナノ粒子は、式AB、AC、BC、AB1−xB’x及びAB1−xB’xC2−yC’yで表される材料からなる群から選択され、Aは、Cu、Zn、Ag又はCdであり、B及びB’は、独立してAl、In又はGaであり、C及びC’は独立してS、Se又はTeであり、xは0≦x≦1、yは0≦y≦2である、方法。 - 第1の低密度モリブデン層は、約2.0×10−4Ω-cmよりも大きい抵抗を有している請求項21の方法。
- 第1の低密度モリブデン層は、約3.0×10−4Ω-cmよりも大きい抵抗を有している請求項21の方法。
- 第1の低密度モリブデン層は、約4.0×10−4Ω-cmよりも大きい抵抗を有している請求項21の方法。
- 第1の低密度モリブデン層は、約5.0×10−4Ω-cmよりも大きい抵抗を有している請求項21の方法。
- 第1の低密度モリブデン層は、約500nmより大きい厚さを有している請求項21の方法。
- 少なくとも一種の有機化合物は、キャッピング剤を含んでいる請求項21の方法。
- 光吸収体層前駆体を加熱してナノ粒子を溶融させることをさらに含んでおり、少なくとも一種の有機化合物の一部が低密度モリブデン層の中に吸収される請求項21の方法。
- 光起電力デバイスを製造する方法であって、
第1の低密度モリブデン層を支持体に堆積し、
前記第1の低密度モリブデン層の上に高密度モリブデン層を堆積し、
前記高密度モリブデン層の上に第2の低密度モリブデン層を堆積し、
前記第2の低密度モリブデン層の上に、ナノ粒子及び少なくとも一種の有機成分を含む光吸収体層前駆体を堆積することを含み、前記ナノ粒子は、式AB、AC、BC、AB1−xB’x及びAB1−xB’xC2−yC’yで表される材料からなる群から選択され、Aは、Cu、Zn、Ag又はCdであり、B及びB’は、独立してAl、In又はGaであり、C及びC’は独立してS、Se又はTeであり、xは0≦x≦1、yは0≦y≦2である、方法。 - 第2の低密度モリブデン層は、約2.0×10−4Ω-cmよりも大きい抵抗を有している請求項29の方法。
- 第2の低密度モリブデン層は、約4.0×10−4Ω-cmよりも大きい抵抗を有している請求項29の方法。
- 第2の低密度モリブデン層は、約500nmより大きい厚さを有している請求項29の方法。
- 高密度モリブデン層は、約0.2×10−4Ω-cmよりも小さい抵抗を有している請求項29の方法。
- 第1の低密度モリブデン層、高密度モリブデン層及び第2の低密度モリブデン層は、約0.5×10−4Ω-cmよりも小さい抵抗を有する複層モリブデン層として複合化される29の方法。
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EP3417087A1 (en) * | 2016-02-19 | 2018-12-26 | Merck Patent GmbH | Deposition of molybdenum thin films using a molybdenum carbonyl precursor |
US9859450B2 (en) * | 2016-08-01 | 2018-01-02 | Solar-Tectic, Llc | CIGS/silicon thin-film tandem solar cell |
CN106433646B (zh) * | 2016-11-30 | 2019-09-24 | 南方科技大学 | 一种光转化量子点、太阳能聚光器和太阳能聚光装置 |
CN108511537B (zh) * | 2018-06-26 | 2022-11-29 | 上海祖强能源有限公司 | 一种太阳能电池 |
CN109860329B (zh) * | 2019-01-11 | 2020-12-22 | 惠科股份有限公司 | 感光器件、x射线探测器及医用设备 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159573A (en) * | 1998-06-18 | 2000-12-12 | U.S. Philips Corporation | Rewritable optical information medium |
JP2006080371A (ja) * | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 太陽電池及びその製造方法 |
US20080271781A1 (en) * | 2004-12-09 | 2008-11-06 | Showa Shell Sekiyu K. K. | Cis Type Thin-Film Solar Cell and Process for Producing the Same |
US20090139574A1 (en) * | 2007-11-30 | 2009-06-04 | Nanoco Technologies Limited | Preparation of nanoparticle material |
US20100140098A1 (en) * | 2008-05-15 | 2010-06-10 | Solopower, Inc. | Selenium containing electrodeposition solution and methods |
WO2010147392A2 (en) * | 2009-06-16 | 2010-12-23 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
JP2011507281A (ja) * | 2007-12-18 | 2011-03-03 | プランゼー メタル ゲゼルシャフト ミット ベシュレンクテル ハフツング | モリブデン含有裏面電極層を有する薄膜太陽電池 |
US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7875945B2 (en) * | 2007-06-12 | 2011-01-25 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
US8613973B2 (en) * | 2007-12-06 | 2013-12-24 | International Business Machines Corporation | Photovoltaic device with solution-processed chalcogenide absorber layer |
US8282995B2 (en) * | 2010-09-30 | 2012-10-09 | Rohm And Haas Electronic Materials Llc | Selenium/group 1b/group 3a ink and methods of making and using same |
US20120234392A1 (en) * | 2011-03-17 | 2012-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
-
2013
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-
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- 2016-02-11 HK HK16101515.6A patent/HK1213692A1/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159573A (en) * | 1998-06-18 | 2000-12-12 | U.S. Philips Corporation | Rewritable optical information medium |
JP2006080371A (ja) * | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 太陽電池及びその製造方法 |
US20080271781A1 (en) * | 2004-12-09 | 2008-11-06 | Showa Shell Sekiyu K. K. | Cis Type Thin-Film Solar Cell and Process for Producing the Same |
US20090139574A1 (en) * | 2007-11-30 | 2009-06-04 | Nanoco Technologies Limited | Preparation of nanoparticle material |
JP2011507281A (ja) * | 2007-12-18 | 2011-03-03 | プランゼー メタル ゲゼルシャフト ミット ベシュレンクテル ハフツング | モリブデン含有裏面電極層を有する薄膜太陽電池 |
US20100140098A1 (en) * | 2008-05-15 | 2010-06-10 | Solopower, Inc. | Selenium containing electrodeposition solution and methods |
WO2010147392A2 (en) * | 2009-06-16 | 2010-12-23 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
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