WO2014072833A3 - Molybdenum substrates for cigs photovoltaic devices - Google Patents
Molybdenum substrates for cigs photovoltaic devices Download PDFInfo
- Publication number
- WO2014072833A3 WO2014072833A3 PCT/IB2013/003106 IB2013003106W WO2014072833A3 WO 2014072833 A3 WO2014072833 A3 WO 2014072833A3 IB 2013003106 W IB2013003106 W IB 2013003106W WO 2014072833 A3 WO2014072833 A3 WO 2014072833A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- molybdenum
- absorber layer
- photovoltaic devices
- cigs
- cigs photovoltaic
- Prior art date
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052750 molybdenum Inorganic materials 0.000 title abstract 5
- 239000011733 molybdenum Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000006096 absorbing agent Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201380058658.1A CN104813482B (en) | 2012-11-09 | 2013-11-08 | Molybdenum base material for CIGS photovoltaic devices |
EP13844532.5A EP2917941A2 (en) | 2012-11-09 | 2013-11-08 | Molybdenum substrates for cigs photovoltaic devices |
JP2015541257A JP6248118B2 (en) | 2012-11-09 | 2013-11-08 | Molybdenum substrate for CIGS photovoltaic devices |
KR1020157014949A KR101747395B1 (en) | 2012-11-09 | 2013-11-08 | Molybdenum substrates for cigs photovoltaic devices |
HK16101515.6A HK1213692A1 (en) | 2012-11-09 | 2016-02-11 | Molybdenum substrates for cigs photovoltaic devices cigs |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261724785P | 2012-11-09 | 2012-11-09 | |
US61/724,785 | 2012-11-09 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2014072833A2 WO2014072833A2 (en) | 2014-05-15 |
WO2014072833A9 WO2014072833A9 (en) | 2014-07-17 |
WO2014072833A3 true WO2014072833A3 (en) | 2014-09-04 |
Family
ID=50439418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2013/003106 WO2014072833A2 (en) | 2012-11-09 | 2013-11-08 | Molybdenum substrates for cigs photovoltaic devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140283913A1 (en) |
EP (1) | EP2917941A2 (en) |
JP (1) | JP6248118B2 (en) |
KR (1) | KR101747395B1 (en) |
CN (1) | CN104813482B (en) |
HK (1) | HK1213692A1 (en) |
WO (1) | WO2014072833A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9355864B2 (en) * | 2013-08-06 | 2016-05-31 | Tel Nexx, Inc. | Method for increasing adhesion of copper to polymeric surfaces |
CN105355676B (en) * | 2015-11-18 | 2017-11-03 | 北京四方创能光电科技有限公司 | A kind of back electrode structure of flexible CIGS thin film solar cell |
CN109072424A (en) * | 2016-02-19 | 2018-12-21 | 默克专利股份有限公司 | Molybdenum film is deposited using molybdenum carbonyl presoma |
US9859450B2 (en) * | 2016-08-01 | 2018-01-02 | Solar-Tectic, Llc | CIGS/silicon thin-film tandem solar cell |
CN106433646B (en) * | 2016-11-30 | 2019-09-24 | 南方科技大学 | A kind of light conversion quantum dot, solar concentrator and solar-energy light collector |
CN108511537B (en) * | 2018-06-26 | 2022-11-29 | 上海祖强能源有限公司 | Solar cell |
CN109860329B (en) * | 2019-01-11 | 2020-12-22 | 惠科股份有限公司 | Photosensitive device, X-ray detector and medical equipment |
CN111640820B (en) * | 2020-06-02 | 2023-06-13 | 东北师范大学 | Simple method for improving back contact of copper-zinc-tin-sulfur-selenium thin film photovoltaic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090139574A1 (en) * | 2007-11-30 | 2009-06-04 | Nanoco Technologies Limited | Preparation of nanoparticle material |
US20120234392A1 (en) * | 2011-03-17 | 2012-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4018340B2 (en) * | 1998-06-18 | 2007-12-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Rewritable optical information medium |
JP2006080371A (en) * | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | Solar cell and its manufacturing method |
JP2006165386A (en) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis system thin film solar cell and method for manufacturing the same |
US7875945B2 (en) * | 2007-06-12 | 2011-01-25 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
US8613973B2 (en) * | 2007-12-06 | 2013-12-24 | International Business Machines Corporation | Photovoltaic device with solution-processed chalcogenide absorber layer |
US20100140098A1 (en) * | 2008-05-15 | 2010-06-10 | Solopower, Inc. | Selenium containing electrodeposition solution and methods |
AT10578U1 (en) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | DUNGOUS SOLAR CELL WITH MOLYBDAN-CONTAINING ELECTRODE LAYER |
KR101081194B1 (en) * | 2009-06-16 | 2011-11-07 | 엘지이노텍 주식회사 | Fabricating device of solar cell and method of fabricating using the same |
US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
US8282995B2 (en) * | 2010-09-30 | 2012-10-09 | Rohm And Haas Electronic Materials Llc | Selenium/group 1b/group 3a ink and methods of making and using same |
-
2013
- 2013-11-08 CN CN201380058658.1A patent/CN104813482B/en not_active Expired - Fee Related
- 2013-11-08 US US14/075,826 patent/US20140283913A1/en not_active Abandoned
- 2013-11-08 KR KR1020157014949A patent/KR101747395B1/en active IP Right Grant
- 2013-11-08 JP JP2015541257A patent/JP6248118B2/en not_active Expired - Fee Related
- 2013-11-08 EP EP13844532.5A patent/EP2917941A2/en not_active Withdrawn
- 2013-11-08 WO PCT/IB2013/003106 patent/WO2014072833A2/en active Application Filing
-
2016
- 2016-02-11 HK HK16101515.6A patent/HK1213692A1/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090139574A1 (en) * | 2007-11-30 | 2009-06-04 | Nanoco Technologies Limited | Preparation of nanoparticle material |
US20120234392A1 (en) * | 2011-03-17 | 2012-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Non-Patent Citations (4)
Title |
---|
HSIAO-MIN WU ET AL: "Structure and electrical properties of Mo back contact for Cu(In, Ga)Sesolar cells", VACUUM, PERGAMON PRESS, GB, vol. 86, no. 12, 26 April 2012 (2012-04-26), pages 1916 - 1919, XP028414876, ISSN: 0042-207X, [retrieved on 20120504], DOI: 10.1016/J.VACUUM.2012.04.036 * |
JU-HEON YOON ET AL: "High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts;High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 44, no. 42, 3 October 2011 (2011-10-03), pages 425302, XP020211401, ISSN: 0022-3727, DOI: 10.1088/0022-3727/44/42/425302 * |
SALOMÃ CR P M P ET AL: "Mo bilayer for thin film photovoltaics revisited;Mo bilayer for thin film photovoltaics revisited", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 43, no. 34, 12 August 2010 (2010-08-12), pages 345501, XP020196781, ISSN: 0022-3727, DOI: 10.1088/0022-3727/43/34/345501 * |
ZHAO-HUI LI ET AL: "Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Sesolar cells", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 257, no. 22, 20 June 2011 (2011-06-20), pages 9682 - 9688, XP028256555, ISSN: 0169-4332, [retrieved on 20110625], DOI: 10.1016/J.APSUSC.2011.06.101 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014072833A9 (en) | 2014-07-17 |
CN104813482B (en) | 2017-12-19 |
CN104813482A (en) | 2015-07-29 |
EP2917941A2 (en) | 2015-09-16 |
HK1213692A1 (en) | 2016-07-08 |
KR101747395B1 (en) | 2017-06-14 |
JP2016502759A (en) | 2016-01-28 |
JP6248118B2 (en) | 2017-12-13 |
US20140283913A1 (en) | 2014-09-25 |
KR20150082525A (en) | 2015-07-15 |
WO2014072833A2 (en) | 2014-05-15 |
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