DE69706983T2 - Anlage zum behandeln von substraten mit einem plasmastrahl - Google Patents

Anlage zum behandeln von substraten mit einem plasmastrahl

Info

Publication number
DE69706983T2
DE69706983T2 DE69706983T DE69706983T DE69706983T2 DE 69706983 T2 DE69706983 T2 DE 69706983T2 DE 69706983 T DE69706983 T DE 69706983T DE 69706983 T DE69706983 T DE 69706983T DE 69706983 T2 DE69706983 T2 DE 69706983T2
Authority
DE
Germany
Prior art keywords
plasma jet
treating substrates
substrates
treating
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69706983T
Other languages
English (en)
Other versions
DE69706983D1 (de
Inventor
Oleg Siniaguine
Iskander Tokmouline
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPEC PREC Inc N D GES D STAATE
Original Assignee
IPEC PREC Inc N D GES D STAATE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPEC PREC Inc N D GES D STAATE filed Critical IPEC PREC Inc N D GES D STAATE
Publication of DE69706983D1 publication Critical patent/DE69706983D1/de
Application granted granted Critical
Publication of DE69706983T2 publication Critical patent/DE69706983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69706983T 1996-05-31 1997-05-30 Anlage zum behandeln von substraten mit einem plasmastrahl Expired - Fee Related DE69706983T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1858796P 1996-05-31 1996-05-31
PCT/US1997/009234 WO1997045857A1 (en) 1996-05-31 1997-05-30 Apparatus for plasma jet treatment of substrates

Publications (2)

Publication Number Publication Date
DE69706983D1 DE69706983D1 (de) 2001-10-31
DE69706983T2 true DE69706983T2 (de) 2002-05-29

Family

ID=21788714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706983T Expired - Fee Related DE69706983T2 (de) 1996-05-31 1997-05-30 Anlage zum behandeln von substraten mit einem plasmastrahl

Country Status (6)

Country Link
US (1) US6105534A (de)
EP (1) EP0902962B1 (de)
JP (1) JP2000511357A (de)
KR (1) KR20000016139A (de)
DE (1) DE69706983T2 (de)
WO (1) WO1997045857A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139678A (en) * 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6287976B1 (en) 1999-05-19 2001-09-11 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6749764B1 (en) 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6546938B2 (en) * 2001-03-12 2003-04-15 The Regents Of The University Of California Combined plasma/liquid cleaning of substrates
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
DE10156615B4 (de) * 2001-11-17 2004-10-07 Forschungszentrum Karlsruhe Gmbh Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US20040173316A1 (en) * 2003-03-07 2004-09-09 Carr Jeffrey W. Apparatus and method using a microwave source for reactive atom plasma processing
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US20060131276A1 (en) * 2004-12-17 2006-06-22 Johnston Steven W Uniformity in batch spray processing using independent cassette rotation
TW200814170A (en) * 2006-09-13 2008-03-16 Ind Tech Res Inst Method of adjusting surface characteristic of a substrate
KR101558018B1 (ko) * 2008-04-22 2015-10-19 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 트뤼프바흐 이온 에칭된 표면을 구비한 워크피스의 제조방법 및 이온 에칭 장치
TW201134969A (en) * 2010-04-09 2011-10-16 Hon Hai Prec Ind Co Ltd Coating bracket and coating device using same
DE102010016792A1 (de) * 2010-05-05 2011-11-10 Aixtron Ag Bevorratungsmagazin einer CVD-Anlage
US20140134849A1 (en) * 2012-11-09 2014-05-15 Intermolecular Inc. Combinatorial Site Isolated Plasma Assisted Deposition
CN103820769B (zh) * 2012-11-16 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室和mocvd设备
US9752223B2 (en) * 2014-03-10 2017-09-05 United Technologies Corporation Equipment for plasma spray with liquid injection
US11898248B2 (en) * 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method
US11862490B2 (en) 2021-07-28 2024-01-02 Changxin Memory Technologies, Inc. Diffusion furnace

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5186594A (en) * 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
JPH05804A (ja) * 1990-08-01 1993-01-08 Sumitomo Electric Ind Ltd 大面積複合酸化物超電導薄膜の成膜装置
US5154730A (en) * 1991-05-17 1992-10-13 Materials Research Corporation Semiconductor wafer processing module having an inclined rotating wafer handling turret and a method of using the module
RU2030811C1 (ru) * 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
US5697749A (en) * 1992-07-17 1997-12-16 Tokyo Electron Kabushiki Kaisha Wafer processing apparatus
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
RU2075135C1 (ru) * 1995-01-13 1997-03-10 Акционерное общество Научно-производственная фирма "А3" Установка для плазмоструйной обработки пластин
WO1996032742A1 (fr) * 1995-04-11 1996-10-17 Zakrytoe Aktsionernoe Obschestvo Nauchno-Proizvodstvennaya Firma 'az' Installation destinee au traitement par flux plasmiques de plaques

Also Published As

Publication number Publication date
US6105534A (en) 2000-08-22
DE69706983D1 (de) 2001-10-31
EP0902962A1 (de) 1999-03-24
KR20000016139A (ko) 2000-03-25
EP0902962B1 (de) 2001-09-26
WO1997045857A1 (en) 1997-12-04
JP2000511357A (ja) 2000-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee