DE69726308D1 - Anlage zum vermindern der polymer - abscheidung auf einem substratträger - Google Patents

Anlage zum vermindern der polymer - abscheidung auf einem substratträger

Info

Publication number
DE69726308D1
DE69726308D1 DE69726308T DE69726308T DE69726308D1 DE 69726308 D1 DE69726308 D1 DE 69726308D1 DE 69726308 T DE69726308 T DE 69726308T DE 69726308 T DE69726308 T DE 69726308T DE 69726308 D1 DE69726308 D1 DE 69726308D1
Authority
DE
Germany
Prior art keywords
deposition
plant
polymer
substrate
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726308T
Other languages
English (en)
Other versions
DE69726308T2 (de
Inventor
S Kennedy
E Wicker
A Maraschin
M Cook
M Schoepp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69726308D1 publication Critical patent/DE69726308D1/de
Application granted granted Critical
Publication of DE69726308T2 publication Critical patent/DE69726308T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69726308T 1996-09-30 1997-09-30 Anlage zum vermindern der polymer - abscheidung auf einem substratträger Expired - Lifetime DE69726308T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US722373 1985-04-12
US72237396A 1996-09-30 1996-09-30
PCT/US1997/017663 WO1998014636A1 (en) 1996-09-30 1997-09-30 Apparatus for reducing polymer deposition on substrate support

Publications (2)

Publication Number Publication Date
DE69726308D1 true DE69726308D1 (de) 2003-12-24
DE69726308T2 DE69726308T2 (de) 2004-08-26

Family

ID=24901581

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726308T Expired - Lifetime DE69726308T2 (de) 1996-09-30 1997-09-30 Anlage zum vermindern der polymer - abscheidung auf einem substratträger

Country Status (7)

Country Link
US (1) US6306244B1 (de)
EP (1) EP0938596B1 (de)
JP (1) JP2001504160A (de)
KR (1) KR100469908B1 (de)
AU (1) AU4741497A (de)
DE (1) DE69726308T2 (de)
WO (1) WO1998014636A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4419237B2 (ja) * 1999-12-22 2010-02-24 東京エレクトロン株式会社 成膜装置及び被処理体の処理方法
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
GB0424371D0 (en) * 2004-11-04 2004-12-08 Trikon Technologies Ltd Shielding design for backside metal deposition
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
KR100809957B1 (ko) * 2006-09-20 2008-03-07 삼성전자주식회사 반도체 식각장치
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US8377207B2 (en) * 2007-05-09 2013-02-19 Ulvac, Inc. Purge gas assembly
US20090025636A1 (en) * 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
JP5331580B2 (ja) * 2008-07-02 2013-10-30 日本碍子株式会社 ウエハ載置装置及びそれに用いる部品
JP5601794B2 (ja) * 2009-05-29 2014-10-08 株式会社東芝 プラズマエッチング装置
TWI385725B (zh) * 2009-09-18 2013-02-11 Advanced Micro Fab Equip Inc A structure that reduces the deposition of polymer on the backside of the substrate
JP6054696B2 (ja) * 2012-09-28 2016-12-27 日本特殊陶業株式会社 静電チャック
JP6778553B2 (ja) * 2016-08-31 2020-11-04 株式会社日本製鋼所 原子層成長装置および原子層成長方法
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11976363B2 (en) * 2021-08-19 2024-05-07 Applied Materials, Inc. Purge ring for pedestal assembly

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5298465A (en) 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5326725A (en) * 1993-03-11 1994-07-05 Applied Materials, Inc. Clamping ring and susceptor therefor
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
EP0628644B1 (de) * 1993-05-27 2003-04-02 Applied Materials, Inc. Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US5498313A (en) 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
KR100276736B1 (ko) 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
EP0668607A1 (de) * 1994-02-22 1995-08-23 Applied Materials, Inc. Erosionsbeständiger elektrostatischer Substratbehälter
US5556476A (en) 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5740009A (en) 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection

Also Published As

Publication number Publication date
US6306244B1 (en) 2001-10-23
EP0938596B1 (de) 2003-11-19
AU4741497A (en) 1998-04-24
EP0938596A1 (de) 1999-09-01
DE69726308T2 (de) 2004-08-26
KR20000048586A (ko) 2000-07-25
WO1998014636A1 (en) 1998-04-09
JP2001504160A (ja) 2001-03-27
KR100469908B1 (ko) 2005-02-02

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