TR200500923A2 - İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K - Google Patents

İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K

Info

Publication number
TR200500923A2
TR200500923A2 TR2005/00923A TR200500923A TR200500923A2 TR 200500923 A2 TR200500923 A2 TR 200500923A2 TR 2005/00923 A TR2005/00923 A TR 2005/00923A TR 200500923 A TR200500923 A TR 200500923A TR 200500923 A2 TR200500923 A2 TR 200500923A2
Authority
TR
Turkey
Prior art keywords
cryptocrystals
dielectric constant
cryptocrystalline
integrated circuit
small dielectric
Prior art date
Application number
TR2005/00923A
Other languages
English (en)
Inventor
�Eref Kalem Prof.Dr.
Original Assignee
T�Rk�Ye B�L�Msel Ve Tekn�K Ara�Tirma Kurumu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by T�Rk�Ye B�L�Msel Ve Tekn�K Ara�Tirma Kurumu filed Critical T�Rk�Ye B�L�Msel Ve Tekn�K Ara�Tirma Kurumu
Priority to TR2005/00923A priority Critical patent/TR200500923A2/tr
Priority to EP06710851.4A priority patent/EP1878043B1/en
Priority to US11/908,778 priority patent/US20080191218A1/en
Priority to CN2006800170631A priority patent/CN101176189B/zh
Priority to PCT/IB2006/050406 priority patent/WO2006097858A2/en
Priority to KR1020077023517A priority patent/KR20070112410A/ko
Priority to CA2602365A priority patent/CA2602365C/en
Priority to EA200701725A priority patent/EA013649B1/ru
Priority to JP2008501454A priority patent/JP5112289B2/ja
Publication of TR200500923A2 publication Critical patent/TR200500923A2/tr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

Bu buluş küçük dielektrik sabitli (küçük-k), kriptokristallerin mikroelektronik entegre devre tabanları üzerinde sentezlenemsi yöntemi ilekriptokristallerin nanoyapılara dönüştürülmesi ve bu süreç sonucu elde edilen kristallerle gerçekleştirilen optik ve elektronik aygıt ve sistemlere ilişkindir.Sentezleme işleminde, buhar fazı yüzey aşındırma yöntemi ile (CVP), silisyum yüzeyinin kristal yapısı ve bileşimi değişikliğe uğratılarak, homojen ve entegre devre tabanıyla kaliteli arayüz oluşturan kriptokristal üretilmiştir.Bu yöntemle, büyüme hızı 1 micrometre/saat olan dielektrik kriptokristal yapı oluşumu gerçekleştirilmiştir.Bu yöntem sonucu oluşturulanNanoteller 1000 nanometreye varançapları ve 50 mikrometre'ye varan uzunluklara sahiptirler.Kriptokristaller, nanoteller ve oraganize yapılar, mikroişlemcilerde performans yükseltici arametal yalıtkanı, yoğun bilgi depolama alanında hafıza hücreleri ve bilgi güvenliği alanında tek yönlü fonksiyon üreticisi olarak ve ayrıcaDEVAMI VAR
TR2005/00923A 2005-03-16 2005-03-16 İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K TR200500923A2 (tr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
TR2005/00923A TR200500923A2 (tr) 2005-03-16 2005-03-16 İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K
EP06710851.4A EP1878043B1 (en) 2005-03-16 2006-02-08 Low-dielectric constant cryptocrystal layers and nanostructures
US11/908,778 US20080191218A1 (en) 2005-03-16 2006-02-08 Low-Dielectric Constant Cryptocrystal Layers And Nanostructures
CN2006800170631A CN101176189B (zh) 2005-03-16 2006-02-08 低介电常数隐晶层及纳米结构
PCT/IB2006/050406 WO2006097858A2 (en) 2005-03-16 2006-02-08 Low-dielectric constant cryptocrystal layers and nanostructures
KR1020077023517A KR20070112410A (ko) 2005-03-16 2006-02-08 저 유전상수 미세정층 및 나노구조
CA2602365A CA2602365C (en) 2005-03-16 2006-02-08 Low-dielectric constant cryptocrystal layers and nanostructures
EA200701725A EA013649B1 (ru) 2005-03-16 2006-02-08 Микрокристаллические и нанокристаллические структуры с низкой диэлектрической проницаемостью для применения в области высоких технологий
JP2008501454A JP5112289B2 (ja) 2005-03-16 2006-02-08 ウエハーボンディングの方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TR2005/00923A TR200500923A2 (tr) 2005-03-16 2005-03-16 İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K

Publications (1)

Publication Number Publication Date
TR200500923A2 true TR200500923A2 (tr) 2010-02-22

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Family Applications (1)

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TR2005/00923A TR200500923A2 (tr) 2005-03-16 2005-03-16 İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K

Country Status (9)

Country Link
US (1) US20080191218A1 (tr)
EP (1) EP1878043B1 (tr)
JP (1) JP5112289B2 (tr)
KR (1) KR20070112410A (tr)
CN (1) CN101176189B (tr)
CA (1) CA2602365C (tr)
EA (1) EA013649B1 (tr)
TR (1) TR200500923A2 (tr)
WO (1) WO2006097858A2 (tr)

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WO2011123115A1 (en) * 2010-03-31 2011-10-06 Hewlett-Packard Development Company, L.P. Nanoscale switching device
CN102184873B (zh) * 2011-04-21 2012-10-10 北京科技大学 一种快速制备金刚石-碳化硅电子封装材料的方法
US9337395B2 (en) 2012-04-30 2016-05-10 Tubitak Methods for producing new silicon light source and devices
DE102017109423A1 (de) * 2017-05-03 2018-11-08 Osram Gmbh Verschlüsselung von Baken
US11605760B2 (en) * 2018-05-21 2023-03-14 Intel Corporation Micro light-emitting diode displays having nanophosphors
US11605668B2 (en) * 2018-05-21 2023-03-14 Intel Corporation Pixel architectures for low power micro light-emitting diode displays
CN109813760A (zh) * 2019-02-28 2019-05-28 江苏理工学院 一种氧化锌纳米线气体传感器及其制备方法
KR102581119B1 (ko) 2020-06-16 2023-09-20 고려대학교 세종산학협력단 인화게르마늄 나노시트 및 이의 제조방법
KR102602180B1 (ko) 2020-08-07 2023-11-13 고려대학교 세종산학협력단 비소화규소 나노시트 및 이의 제조방법

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Also Published As

Publication number Publication date
CA2602365C (en) 2017-05-09
CN101176189B (zh) 2011-05-11
EP1878043A2 (en) 2008-01-16
EA013649B1 (ru) 2010-06-30
JP5112289B2 (ja) 2013-01-09
WO2006097858A3 (en) 2007-07-19
CA2602365A1 (en) 2006-09-21
EA200701725A1 (ru) 2008-08-29
US20080191218A1 (en) 2008-08-14
EP1878043B1 (en) 2021-11-03
CN101176189A (zh) 2008-05-07
JP2008537844A (ja) 2008-09-25
WO2006097858A2 (en) 2006-09-21
KR20070112410A (ko) 2007-11-23

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