EA200701725A1 - Слои неявных кристаллов с низкой диэлектрической проницаемостью и наноструктуры для применения в высоких технологиях - Google Patents

Слои неявных кристаллов с низкой диэлектрической проницаемостью и наноструктуры для применения в высоких технологиях

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Publication number
EA200701725A1
EA200701725A1 EA200701725A EA200701725A EA200701725A1 EA 200701725 A1 EA200701725 A1 EA 200701725A1 EA 200701725 A EA200701725 A EA 200701725A EA 200701725 A EA200701725 A EA 200701725A EA 200701725 A1 EA200701725 A1 EA 200701725A1
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Eurasian Patent Office
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crystals
implicit
nanowires
layers
present
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EA200701725A
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English (en)
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EA013649B1 (ru
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Сереф Калем
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Тубитак
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

Настоящее изобретение предлагает способ получения пригодных для применения слоев неявных кристаллов с низким значением диэлектрической проницаемости на известных в технике полупроводниковых подложках, а также получения наноструктур, сформированных из этих неявных кристаллов, и относится к оптическим и электронным устройствам, которые могут быть получены из этих материалов. Полученные результаты показывают, что модифицирование структуры и химического состава матрицы монокристалла с использованием метода химического осаждения из паровой фазы обеспечивает получение высококачественных гомогенных слоев неявных кристаллов, которые образуют гладкую границу раздела с полупроводниковой подложкой. С помощью этого способа можно осуществить осаждение диэлектрических неявных кристаллов со скоростью 1 мкм/ч. Настоящее изобретение также обеспечивает способ получения микро- и нанопроволок путем преобразования неявных кристаллов в упорядоченные структуры. Настоящее изобретение также предлагает способ получения микро- и нанопроволок с размерами от нескольких нанометров до 1000 нм и длиной до 50 мкм. Неявные кристаллы, нанопроволоки и упорядоченные структуры могут быть использованы в будущих межкомпонентных соединениях в качестве межуровневых и интерметаллических диэлектриков, в производстве ячеек памяти со сверхвысокой плотностью, системах информационной безопасности в качестве кодовых генераторов, в производстве компонентов для фотоники и датчиков.
EA200701725A 2005-03-16 2006-02-08 Микрокристаллические и нанокристаллические структуры с низкой диэлектрической проницаемостью для применения в области высоких технологий EA013649B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TR2005/00923A TR200500923A2 (tr) 2005-03-16 2005-03-16 İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K
PCT/IB2006/050406 WO2006097858A2 (en) 2005-03-16 2006-02-08 Low-dielectric constant cryptocrystal layers and nanostructures

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EA200701725A1 true EA200701725A1 (ru) 2008-08-29
EA013649B1 EA013649B1 (ru) 2010-06-30

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EA200701725A EA013649B1 (ru) 2005-03-16 2006-02-08 Микрокристаллические и нанокристаллические структуры с низкой диэлектрической проницаемостью для применения в области высоких технологий

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US (1) US20080191218A1 (ru)
EP (1) EP1878043B1 (ru)
JP (1) JP5112289B2 (ru)
KR (1) KR20070112410A (ru)
CN (1) CN101176189B (ru)
CA (1) CA2602365C (ru)
EA (1) EA013649B1 (ru)
TR (1) TR200500923A2 (ru)
WO (1) WO2006097858A2 (ru)

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CA2602365C (en) 2017-05-09
CN101176189B (zh) 2011-05-11
EP1878043A2 (en) 2008-01-16
EA013649B1 (ru) 2010-06-30
JP5112289B2 (ja) 2013-01-09
WO2006097858A3 (en) 2007-07-19
CA2602365A1 (en) 2006-09-21
TR200500923A2 (tr) 2010-02-22
US20080191218A1 (en) 2008-08-14
EP1878043B1 (en) 2021-11-03
CN101176189A (zh) 2008-05-07
JP2008537844A (ja) 2008-09-25
WO2006097858A2 (en) 2006-09-21
KR20070112410A (ko) 2007-11-23

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