SG98004A1 - Magneto-resistance effect head and magnetic storage device employing the head - Google Patents

Magneto-resistance effect head and magnetic storage device employing the head

Info

Publication number
SG98004A1
SG98004A1 SG200007459A SG200007459A SG98004A1 SG 98004 A1 SG98004 A1 SG 98004A1 SG 200007459 A SG200007459 A SG 200007459A SG 200007459 A SG200007459 A SG 200007459A SG 98004 A1 SG98004 A1 SG 98004A1
Authority
SG
Singapore
Prior art keywords
head
magneto
storage device
magnetic storage
resistance effect
Prior art date
Application number
SG200007459A
Other languages
English (en)
Inventor
Hayashi Kazuhiko
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Publication of SG98004A1 publication Critical patent/SG98004A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
SG200007459A 1999-12-14 2000-12-14 Magneto-resistance effect head and magnetic storage device employing the head SG98004A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35426199A JP2001176027A (ja) 1999-12-14 1999-12-14 磁気抵抗効果ヘッド及びこれを用いた磁気記憶装置

Publications (1)

Publication Number Publication Date
SG98004A1 true SG98004A1 (en) 2003-08-20

Family

ID=18436362

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200007459A SG98004A1 (en) 1999-12-14 2000-12-14 Magneto-resistance effect head and magnetic storage device employing the head

Country Status (5)

Country Link
US (1) US6674615B2 (ko)
JP (1) JP2001176027A (ko)
KR (1) KR100379978B1 (ko)
CN (1) CN1183517C (ko)
SG (1) SG98004A1 (ko)

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US7027274B1 (en) * 2001-08-30 2006-04-11 Western Digital (Fremont), Inc. Spin-dependent tunneling read/write sensor for hard disk drives
US6704176B2 (en) * 2001-11-13 2004-03-09 Seagate Technology Llc Spin valve sensor
US6754056B2 (en) * 2002-01-18 2004-06-22 International Business Machines Corporation Read head having a tunnel junction sensor with a free layer biased by exchange coupling with insulating antiferromagnetic (AFM) layers
KR20030071063A (ko) * 2002-02-27 2003-09-03 주식회사 엘지이아이 자기 터널 접합 제조 방법
JP4013140B2 (ja) * 2003-01-15 2007-11-28 ソニー株式会社 磁気メモリ装置
JP3729498B2 (ja) * 2003-02-26 2005-12-21 株式会社東芝 磁気抵抗効果ヘッドおよび磁気記録再生装置
CN100541819C (zh) * 2003-06-24 2009-09-16 国际商业机器公司 用于磁性随机存取存储装置的自对准导电线及其形成方法
CN1595189B (zh) * 2003-09-10 2010-06-16 信越化学工业株式会社 用于磁路的包装板、使用该包装板包装磁路的方法以及磁路的包装件
US20050063106A1 (en) * 2003-09-11 2005-03-24 Satoshi Hibino Magnetic sensor and manufacturing method therefor
US7446985B2 (en) * 2003-12-19 2008-11-04 Agency For Science Technology And Research Epitaxial oxide cap layers for enhancing GMR performance
US7369373B2 (en) * 2004-04-26 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR with hard magnet in stack bias layer
JP4008478B2 (ja) * 2005-07-13 2007-11-14 Ｔｄｋ株式会社 磁界検出素子、基体、ウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、および磁界検出素子の製造方法
US7663847B2 (en) * 2005-08-09 2010-02-16 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having an anisotropic hard bias without a buffer layer
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
US7698807B2 (en) * 2006-01-20 2010-04-20 Hitachi Global Storage Technologies, Netherlands B.V. Method of manufacturing a magnetic sensor by multiple depositions of varying geometry
JP4514721B2 (ja) * 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2007299880A (ja) 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP4622953B2 (ja) * 2006-08-01 2011-02-02 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法及び薄膜磁気ヘッドの製造方法
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP2008288235A (ja) 2007-05-15 2008-11-27 Tdk Corp 磁気検出素子及びその製造方法
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
KR101016115B1 (ko) * 2008-12-03 2011-02-17 주식회사 삼천리 가스배관 철거시스템 및 이를 이용한 가스배관 철거방법
JP7332507B2 (ja) * 2020-03-17 2023-08-23 株式会社東芝 磁気ヘッド

Citations (2)

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JPH10154311A (ja) * 1996-11-21 1998-06-09 Nec Corp 磁気抵抗効果素子およびシールド型磁気抵抗効果センサ
EP0892391A2 (en) * 1997-07-18 1999-01-20 Hitachi, Ltd. Magnetoresistive effect type reproducing head and magnetic disk apparatus equipped with the reproducing head

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US5206590A (en) 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH08213238A (ja) * 1995-02-03 1996-08-20 Sumitomo Metal Ind Ltd 磁気抵抗センサ
US5896252A (en) 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
JP3222081B2 (ja) 1996-03-15 2001-10-22 株式会社東芝 磁気記録再生ヘッド及びその製造方法
JP3531399B2 (ja) 1997-03-07 2004-05-31 Ｔｄｋ株式会社 磁気抵抗効果素子
GB2317924B (en) * 1996-10-07 2000-07-12 Watson Marlow Limited Peristaltic pump
JP3547930B2 (ja) * 1997-02-13 2004-07-28 三洋電機株式会社 薄膜磁気ヘッド
JPH10310568A (ja) 1997-05-12 1998-11-24 Mitsubishi Chem Corp Ｎ−アルコキシカルボニル−ｌ−アスパラギン
JPH10340430A (ja) * 1997-06-10 1998-12-22 Fujitsu Ltd スピンバルブ磁気抵抗効果型ヘッドおよび磁気記憶装置
US5898548A (en) 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head
JPH11175920A (ja) * 1997-12-05 1999-07-02 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JP3114683B2 (ja) * 1998-01-22 2000-12-04 日本電気株式会社 磁気抵抗効果素子およびその製造方法、ならびにこの磁気抵抗効果素子を用いた磁気抵抗効果センサ，磁気抵抗検出システムおよび磁気記憶システム
JP2927285B1 (ja) * 1998-01-26 1999-07-28 日本電気株式会社 磁気抵抗効果型ヘッド
JPH11316919A (ja) * 1998-04-30 1999-11-16 Hitachi Ltd スピントンネル磁気抵抗効果型磁気ヘッド
US6108177A (en) * 1998-11-19 2000-08-22 International Business Machines Corporation Tunnel junction structure with FeX ferromagnetic layers
JP3592140B2 (ja) * 1999-07-02 2004-11-24 Ｔｄｋ株式会社 トンネル磁気抵抗効果型ヘッド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154311A (ja) * 1996-11-21 1998-06-09 Nec Corp 磁気抵抗効果素子およびシールド型磁気抵抗効果センサ
EP0892391A2 (en) * 1997-07-18 1999-01-20 Hitachi, Ltd. Magnetoresistive effect type reproducing head and magnetic disk apparatus equipped with the reproducing head

Also Published As

Publication number Publication date
US20010005300A1 (en) 2001-06-28
CN1183517C (zh) 2005-01-05
US6674615B2 (en) 2004-01-06
JP2001176027A (ja) 2001-06-29
KR100379978B1 (ko) 2003-04-11
CN1308316A (zh) 2001-08-15
KR20010062412A (ko) 2001-07-07

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