SG95694A1 - Wafer planarization apparatus - Google Patents

Wafer planarization apparatus

Info

Publication number
SG95694A1
SG95694A1 SG200203058A SG200203058A SG95694A1 SG 95694 A1 SG95694 A1 SG 95694A1 SG 200203058 A SG200203058 A SG 200203058A SG 200203058 A SG200203058 A SG 200203058A SG 95694 A1 SG95694 A1 SG 95694A1
Authority
SG
Singapore
Prior art keywords
planarization apparatus
wafer planarization
wafer
planarization
Prior art date
Application number
SG200203058A
Other languages
English (en)
Inventor
Kobayashi Kazuo
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of SG95694A1 publication Critical patent/SG95694A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67271—Sorting devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
SG200203058A 2001-05-21 2002-05-21 Wafer planarization apparatus SG95694A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001150637A JP2002343756A (ja) 2001-05-21 2001-05-21 ウェーハ平面加工装置

Publications (1)

Publication Number Publication Date
SG95694A1 true SG95694A1 (en) 2003-04-23

Family

ID=18995623

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200203058A SG95694A1 (en) 2001-05-21 2002-05-21 Wafer planarization apparatus

Country Status (8)

Country Link
US (1) US6863590B2 (fr)
EP (1) EP1263026B1 (fr)
JP (1) JP2002343756A (fr)
KR (1) KR20020089180A (fr)
DE (1) DE60213710T2 (fr)
MY (1) MY131229A (fr)
SG (1) SG95694A1 (fr)
TW (1) TWI253969B (fr)

Families Citing this family (38)

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JP2003209080A (ja) * 2002-01-11 2003-07-25 Disco Abrasive Syst Ltd 半導体ウェーハ保護部材及び半導体ウェーハの研削方法
US6944517B2 (en) * 2003-07-03 2005-09-13 Brooks Automation, Inc. Substrate apparatus calibration and synchronization procedure
CN1299336C (zh) * 2003-07-29 2007-02-07 南茂科技股份有限公司 晶圆背面研磨工艺
US20080138962A1 (en) * 2004-07-22 2008-06-12 Renesas Technology Corp. Manufacturing Method of Semiconductor Device
JP4795743B2 (ja) * 2005-05-19 2011-10-19 リンテック株式会社 貼付装置
WO2007018041A1 (fr) * 2005-08-11 2007-02-15 Lintec Corporation Dispositif d'application de feuille et procede d'application
JP4836557B2 (ja) * 2005-11-25 2011-12-14 株式会社東京精密 ダイシングテープ貼付装置およびダイシングテープ貼付方法
JP4953764B2 (ja) * 2005-11-29 2012-06-13 株式会社東京精密 剥離テープ貼付方法および剥離テープ貼付装置
JP4668052B2 (ja) * 2005-12-06 2011-04-13 東京応化工業株式会社 剥離装置
JP4841262B2 (ja) 2006-02-13 2011-12-21 株式会社東京精密 ウェーハ処理装置
JP4693696B2 (ja) 2006-06-05 2011-06-01 株式会社東京精密 ワーク処理装置
JP4698519B2 (ja) * 2006-07-31 2011-06-08 日東電工株式会社 半導体ウエハマウント装置
JP5008999B2 (ja) * 2007-02-06 2012-08-22 リンテック株式会社 ダイシングテープおよび半導体装置の製造方法
JP4746002B2 (ja) * 2007-05-07 2011-08-10 リンテック株式会社 移載装置及び移載方法
JP4746003B2 (ja) * 2007-05-07 2011-08-10 リンテック株式会社 移載装置及び移載方法
JP4964070B2 (ja) * 2007-09-10 2012-06-27 日東電工株式会社 保護テープ剥離方法および保護テープ剥離装置
JP4851414B2 (ja) * 2007-10-04 2012-01-11 日東電工株式会社 保護テープ剥離方法およびこれを用いた装置
JP5165450B2 (ja) * 2008-04-22 2013-03-21 株式会社ディスコ 研削装置及び板状物の厚み算出方法
JP2010005717A (ja) * 2008-06-25 2010-01-14 Disco Abrasive Syst Ltd 加工装置
JP2010050265A (ja) * 2008-08-21 2010-03-04 Tokyo Seimitsu Co Ltd ウェーハの搬送用パッド
JP2010247311A (ja) * 2009-04-20 2010-11-04 Disco Abrasive Syst Ltd 被加工物の研削方法
JP5654782B2 (ja) * 2010-06-22 2015-01-14 株式会社ディスコ 研削加工装置
JP5773660B2 (ja) * 2011-01-19 2015-09-02 株式会社ディスコ 樹脂剥がし装置および研削加工装置
JP5639958B2 (ja) * 2011-05-27 2014-12-10 日東電工株式会社 半導体ウエハマウント方法および半導体ウエハマウント装置
KR101838109B1 (ko) * 2011-12-06 2018-03-14 삼성전자주식회사 컨택터 및 이를 포함하는 반도체 테스트 장치
JP5957220B2 (ja) * 2011-12-20 2016-07-27 株式会社ディスコ 板状ワークの割れ判断方法
US8834662B2 (en) * 2012-03-22 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of separating wafer from carrier
US9355882B2 (en) * 2013-12-04 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Transfer module for bowed wafers
KR102559647B1 (ko) * 2016-08-12 2023-07-25 삼성디스플레이 주식회사 기판 연마 시스템 및 기판 연마 방법
JP6754272B2 (ja) * 2016-10-24 2020-09-09 株式会社ディスコ 研削装置
KR20240038173A (ko) 2017-08-28 2024-03-22 린텍 가부시키가이샤 마운트 장치 및 마운트 방법
JP7071818B2 (ja) * 2017-11-22 2022-05-19 東京エレクトロン株式会社 基板処理システム
JP6968201B2 (ja) * 2017-12-22 2021-11-17 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
KR102629528B1 (ko) 2018-01-09 2024-01-25 도쿄엘렉트론가부시키가이샤 세정 장치, 세정 방법 및 컴퓨터 기억 매체
WO2020004791A1 (fr) * 2018-06-29 2020-01-02 주식회사 고영테크놀러지 Appareil déflecteur et procédé de test d'objet faisant appel à celui-ci
KR102204769B1 (ko) * 2019-11-02 2021-01-19 주식회사 윈텍오토메이션 초경인서트 제품 연삭을 위한 핸들러 장치
CN112008595A (zh) * 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 一种晶圆研磨装置及研磨方法
JP2023023594A (ja) 2021-08-05 2023-02-16 株式会社ディスコ 基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074774A (ja) * 1996-08-29 1998-03-17 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPH1092657A (ja) * 1996-09-09 1998-04-10 Kenwood Corp 薄膜チップ部品及びその製造方法
JPH11161916A (ja) * 1997-11-28 1999-06-18 Fuji Elelctrochem Co Ltd 磁気ヘッド製造方法

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US5336319A (en) * 1992-05-26 1994-08-09 Xerox Corporation Apparatus for applying an adhesive layer to a substrate surface
US5830565A (en) 1996-11-08 1998-11-03 W. L. Gore & Associates, Inc. High planarity and low thermal coefficient of expansion base for semi-conductor reliability screening
EP0848417B1 (fr) 1996-12-13 2004-09-08 International Business Machines Corporation Améliorations concernant le polissage mécano-chimique dans des plaquettes semi-conductrices
US6075375A (en) * 1997-06-11 2000-06-13 Applied Materials, Inc. Apparatus for wafer detection
KR100253085B1 (ko) * 1997-07-10 2000-04-15 윤종용 측정장치를구비한웨이퍼폴리싱장치및폴리싱방법
JPH11111671A (ja) * 1997-09-30 1999-04-23 Hitachi Ltd 半導体処理装置および半導体装置の製造方法
US5974903A (en) * 1998-01-08 1999-11-02 Intel Corporation Method and apparatus for in situ visual inspection of die products in tape and reel shipping medium
US6132289A (en) * 1998-03-31 2000-10-17 Lam Research Corporation Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
DE69937181T2 (de) * 1998-04-28 2008-06-19 Ebara Corp. Polierschleifscheibe und substrat polierverfahren mit hilfe dieser schleifscheibe
JP3410371B2 (ja) * 1998-08-18 2003-05-26 リンテック株式会社 ウエハ裏面研削時の表面保護シートおよびその利用方法
JP2000254857A (ja) * 1999-01-06 2000-09-19 Tokyo Seimitsu Co Ltd 平面加工装置及び平面加工方法
JP2000331963A (ja) 1999-05-21 2000-11-30 Tokyo Seimitsu Co Ltd ウェーハフレームへのウェーハ取付方法と装置及びそれを組込んだ平面加工装置
JP3675237B2 (ja) * 1999-07-09 2005-07-27 株式会社東京精密 平面加工装置
JP3348700B2 (ja) * 1999-08-19 2002-11-20 株式会社東京精密 エッチング装置
JP3368876B2 (ja) * 1999-11-05 2003-01-20 株式会社東京精密 半導体チップ製造方法
JP2001326201A (ja) * 2000-05-16 2001-11-22 Ebara Corp ポリッシング装置
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH1074774A (ja) * 1996-08-29 1998-03-17 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPH1092657A (ja) * 1996-09-09 1998-04-10 Kenwood Corp 薄膜チップ部品及びその製造方法
JPH11161916A (ja) * 1997-11-28 1999-06-18 Fuji Elelctrochem Co Ltd 磁気ヘッド製造方法

Also Published As

Publication number Publication date
JP2002343756A (ja) 2002-11-29
US6863590B2 (en) 2005-03-08
EP1263026A2 (fr) 2002-12-04
DE60213710D1 (de) 2006-09-21
KR20020089180A (ko) 2002-11-29
MY131229A (en) 2007-07-31
TWI253969B (en) 2006-05-01
EP1263026A3 (fr) 2004-02-18
EP1263026B1 (fr) 2006-08-09
DE60213710T2 (de) 2006-12-14
US20020173229A1 (en) 2002-11-21

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