SG90207A1 - Chemically amplified positive resist composition - Google Patents

Chemically amplified positive resist composition

Info

Publication number
SG90207A1
SG90207A1 SG200006974A SG200006974A SG90207A1 SG 90207 A1 SG90207 A1 SG 90207A1 SG 200006974 A SG200006974 A SG 200006974A SG 200006974 A SG200006974 A SG 200006974A SG 90207 A1 SG90207 A1 SG 90207A1
Authority
SG
Singapore
Prior art keywords
resist composition
positive resist
chemically amplified
amplified positive
chemically
Prior art date
Application number
SG200006974A
Other languages
English (en)
Inventor
Uetani Yasunori
Kim Seong-Hyeon
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG90207A1 publication Critical patent/SG90207A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG200006974A 1999-12-03 2000-11-27 Chemically amplified positive resist composition SG90207A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34444699 1999-12-03
JP2000203648A JP4529245B2 (ja) 1999-12-03 2000-07-05 化学増幅型ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
SG90207A1 true SG90207A1 (en) 2002-07-23

Family

ID=26577768

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200006974A SG90207A1 (en) 1999-12-03 2000-11-27 Chemically amplified positive resist composition

Country Status (9)

Country Link
US (1) US6632581B2 (it)
JP (1) JP4529245B2 (it)
KR (1) KR100774852B1 (it)
CN (1) CN1173232C (it)
DE (1) DE10059909A1 (it)
GB (1) GB2356941B (it)
IT (1) IT1320849B1 (it)
SG (1) SG90207A1 (it)
TW (1) TWI267702B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP5064614B2 (ja) * 2001-02-01 2012-10-31 株式会社ダイセル 環式骨格を有する（メタ）アクリル酸エステルの製造法
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7147985B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups having hydrophilic groups attached thereto
JP4611813B2 (ja) * 2005-06-15 2011-01-12 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR20070090348A (ko) * 2006-03-02 2007-09-06 주식회사 코오롱 벌키한 치환기가 도입된 노보넨-에스테르계 중합체

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
GB2320718A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Industries Co Ltd Bicycloalkene photoresist copolymers
JPH10316720A (ja) * 1997-04-08 1998-12-02 Korea Kumho Petrochem Co Ltd 陽性フォトレジスト製造用共重合体およびこれを含有する化学増幅型陽性フォトレジスト組成物

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19717415A1 (de) 1997-04-25 1998-10-29 Stoll & Co H Verfahren zur Herstellung von räumlichen, ein- oder mehrflächigen Gestrickstücken auf einer Flachstrickmaschine
JPH11130544A (ja) 1997-08-19 1999-05-18 Kyocera Corp 誘電体磁器組成物及びその製造方法
JP3841378B2 (ja) * 1997-09-25 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
EP0918048A1 (en) * 1997-11-19 1999-05-26 Wako Pure Chemical Industries, Ltd. A novel monomer and a polymer obtained therefrom
JP3997588B2 (ja) * 1998-01-30 2007-10-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
JP3772249B2 (ja) * 1998-05-11 2006-05-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
JP4307663B2 (ja) * 1998-12-16 2009-08-05 東京応化工業株式会社 ポジ型レジスト組成物およびそれに用いる重合体、並びにレジストパターン形成方法
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
US6292303B1 (en) * 1999-03-10 2001-09-18 Hamar Laser Instruments, Inc. Laser apparatus for simultaneously generating a plurality of laser planes from a single laser source
JP4124907B2 (ja) * 1999-04-06 2008-07-23 東京応化工業株式会社 ポジ型レジスト組成物
JP2001083708A (ja) * 1999-09-08 2001-03-30 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP3812622B2 (ja) * 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100332463B1 (ko) * 1999-12-20 2002-04-13 박찬구 노보난계 저분자 화합물 첨가제를 포함하는 화학증폭형레지스트 조성물
JP4453138B2 (ja) * 1999-12-22 2010-04-21 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6277174B1 (en) * 2000-01-07 2001-08-21 Praxair Technology, Inc. Low pressure ratio VPSA plant tuning and balancing system
US6673513B2 (en) * 2000-01-19 2004-01-06 Samsung Electronics Co., Ltd. Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
JP4061801B2 (ja) * 2000-01-24 2008-03-19 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR20010081852A (ko) * 2000-02-19 2001-08-29 김동석 8-알킬-8-트리싸이클로데카닐5-노르보르넨-2-카르복실레이트 및 그 제조방법
KR20010081853A (ko) * 2000-02-19 2001-08-29 김동석 2-알킬-2-아다만틸 5-노르보르넨-2-카르복실레이트 및 그제조방법
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
US6306554B1 (en) * 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
JP2002156750A (ja) * 2000-11-20 2002-05-31 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
GB2320718A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Industries Co Ltd Bicycloalkene photoresist copolymers
JPH10316720A (ja) * 1997-04-08 1998-12-02 Korea Kumho Petrochem Co Ltd 陽性フォトレジスト製造用共重合体およびこれを含有する化学増幅型陽性フォトレジスト組成物

Also Published As

Publication number Publication date
US6632581B2 (en) 2003-10-14
KR100774852B1 (ko) 2007-11-08
JP2001222113A (ja) 2001-08-17
CN1173232C (zh) 2004-10-27
ITTO20001116A1 (it) 2002-05-30
TWI267702B (en) 2006-12-01
GB2356941A (en) 2001-06-06
GB2356941B (en) 2001-12-12
IT1320849B1 (it) 2003-12-10
KR20010062025A (ko) 2001-07-07
US20010033987A1 (en) 2001-10-25
GB0029364D0 (en) 2001-01-17
DE10059909A1 (de) 2001-06-07
CN1299079A (zh) 2001-06-13
JP4529245B2 (ja) 2010-08-25

Similar Documents

Publication Publication Date Title
GB2358256B (en) Chemically amplified positive resist composition
SG94799A1 (en) Chemically amplified positive resist composition
EP0989459A4 (en) CHEMICALLY AMPLIFIED PROTECTIVE AGENT COMPOSITION
SG76000A1 (en) Chemical amplification type positive resist composition
SG99336A1 (en) Chemically amplified positive resist composition
SG76651A1 (en) Chemical amplification type positive resist
EP1302813A4 (en) RESIST COMPOSITION
SG87205A1 (en) Chemically amplified positive resist composition
SG94738A1 (en) Chemically amplified positive resist composition
EP1209525A4 (en) RESIST RESIN COMPOSITION FOR CHEMICAL AMPLIFICATION
GB2356258B (en) Chemical amplification type resist composition
HK1047241A1 (zh) 放射線防護劑
SG89404A1 (en) Resist composition
GB9902520D0 (en) Composition
GB2356941B (en) Chemically amplified positive resist composition
GB2360600B (en) Positive resist composition
GB2370367B (en) Chemical amplifying type positive resist composition
GB2351355B (en) Positive resist compositions
GB2366984B (en) Composition
GB9914446D0 (en) Composition
GB2357714B (en) Composition
GB9914582D0 (en) Composition
GB9914596D0 (en) Composition
GB9914709D0 (en) Composition
GB9907270D0 (en) Composition