IT1320849B1 - Composizione resist positiva amplificata chimicamente. - Google Patents

Composizione resist positiva amplificata chimicamente.

Info

Publication number
IT1320849B1
IT1320849B1 IT2000TO001116A ITTO20001116A IT1320849B1 IT 1320849 B1 IT1320849 B1 IT 1320849B1 IT 2000TO001116 A IT2000TO001116 A IT 2000TO001116A IT TO20001116 A ITTO20001116 A IT TO20001116A IT 1320849 B1 IT1320849 B1 IT 1320849B1
Authority
IT
Italy
Prior art keywords
resist composition
positive resist
chemically amplified
amplified positive
chemically
Prior art date
Application number
IT2000TO001116A
Other languages
English (en)
Inventor
Uetani Yasunori
Kim Seong-Hyeon
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of ITTO20001116A1 publication Critical patent/ITTO20001116A1/it
Application granted granted Critical
Publication of IT1320849B1 publication Critical patent/IT1320849B1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT2000TO001116A 1999-12-03 2000-11-30 Composizione resist positiva amplificata chimicamente. IT1320849B1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34444699 1999-12-03
JP2000203648A JP4529245B2 (ja) 1999-12-03 2000-07-05 化学増幅型ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
ITTO20001116A1 ITTO20001116A1 (it) 2002-05-30
IT1320849B1 true IT1320849B1 (it) 2003-12-10

Family

ID=26577768

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000TO001116A IT1320849B1 (it) 1999-12-03 2000-11-30 Composizione resist positiva amplificata chimicamente.

Country Status (9)

Country Link
US (1) US6632581B2 (it)
JP (1) JP4529245B2 (it)
KR (1) KR100774852B1 (it)
CN (1) CN1173232C (it)
DE (1) DE10059909A1 (it)
GB (1) GB2356941B (it)
IT (1) IT1320849B1 (it)
SG (1) SG90207A1 (it)
TW (1) TWI267702B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP5064614B2 (ja) * 2001-02-01 2012-10-31 株式会社ダイセル 環式骨格を有する（メタ）アクリル酸エステルの製造法
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7147985B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups having hydrophilic groups attached thereto
JP4611813B2 (ja) * 2005-06-15 2011-01-12 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR20070090348A (ko) * 2006-03-02 2007-09-06 주식회사 코오롱 벌키한 치환기가 도입된 노보넨-에스테르계 중합체

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100195583B1 (ko) * 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
DE19717415A1 (de) 1997-04-25 1998-10-29 Stoll & Co H Verfahren zur Herstellung von räumlichen, ein- oder mehrflächigen Gestrickstücken auf einer Flachstrickmaschine
JPH11130544A (ja) 1997-08-19 1999-05-18 Kyocera Corp 誘電体磁器組成物及びその製造方法
JP3841378B2 (ja) * 1997-09-25 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
EP0918048A1 (en) * 1997-11-19 1999-05-26 Wako Pure Chemical Industries, Ltd. A novel monomer and a polymer obtained therefrom
JP3997588B2 (ja) * 1998-01-30 2007-10-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
JP3772249B2 (ja) * 1998-05-11 2006-05-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
KR100574574B1 (ko) * 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
JP4307663B2 (ja) * 1998-12-16 2009-08-05 東京応化工業株式会社 ポジ型レジスト組成物およびそれに用いる重合体、並びにレジストパターン形成方法
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
US6292303B1 (en) * 1999-03-10 2001-09-18 Hamar Laser Instruments, Inc. Laser apparatus for simultaneously generating a plurality of laser planes from a single laser source
JP4124907B2 (ja) * 1999-04-06 2008-07-23 東京応化工業株式会社 ポジ型レジスト組成物
JP2001083708A (ja) * 1999-09-08 2001-03-30 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP3812622B2 (ja) * 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100332463B1 (ko) * 1999-12-20 2002-04-13 박찬구 노보난계 저분자 화합물 첨가제를 포함하는 화학증폭형레지스트 조성물
JP4453138B2 (ja) * 1999-12-22 2010-04-21 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6277174B1 (en) * 2000-01-07 2001-08-21 Praxair Technology, Inc. Low pressure ratio VPSA plant tuning and balancing system
US6673513B2 (en) * 2000-01-19 2004-01-06 Samsung Electronics Co., Ltd. Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
JP4061801B2 (ja) * 2000-01-24 2008-03-19 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR20010081852A (ko) * 2000-02-19 2001-08-29 김동석 8-알킬-8-트리싸이클로데카닐5-노르보르넨-2-카르복실레이트 및 그 제조방법
KR20010081853A (ko) * 2000-02-19 2001-08-29 김동석 2-알킬-2-아다만틸 5-노르보르넨-2-카르복실레이트 및 그제조방법
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
US6306554B1 (en) * 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
JP2002156750A (ja) * 2000-11-20 2002-05-31 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物

Also Published As

Publication number Publication date
US20010033987A1 (en) 2001-10-25
GB0029364D0 (en) 2001-01-17
GB2356941B (en) 2001-12-12
KR100774852B1 (ko) 2007-11-08
DE10059909A1 (de) 2001-06-07
CN1173232C (zh) 2004-10-27
GB2356941A (en) 2001-06-06
TWI267702B (en) 2006-12-01
JP4529245B2 (ja) 2010-08-25
US6632581B2 (en) 2003-10-14
JP2001222113A (ja) 2001-08-17
ITTO20001116A1 (it) 2002-05-30
CN1299079A (zh) 2001-06-13
SG90207A1 (en) 2002-07-23
KR20010062025A (ko) 2001-07-07

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