SG87198A1 - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG87198A1
SG87198A1 SG200100177A SG200100177A SG87198A1 SG 87198 A1 SG87198 A1 SG 87198A1 SG 200100177 A SG200100177 A SG 200100177A SG 200100177 A SG200100177 A SG 200100177A SG 87198 A1 SG87198 A1 SG 87198A1
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG200100177A
Other languages
English (en)
Inventor
Ina Katsuyoshi
Scott Rader W
M Shemo David
Hori Tetsuji
Original Assignee
Fujimi Inc
Fujimi America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc, Fujimi America Inc filed Critical Fujimi Inc
Publication of SG87198A1 publication Critical patent/SG87198A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200100177A 2000-02-11 2001-01-10 Polishing composition SG87198A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/502,336 US6355075B1 (en) 2000-02-11 2000-02-11 Polishing composition

Publications (1)

Publication Number Publication Date
SG87198A1 true SG87198A1 (en) 2002-03-19

Family

ID=23997359

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100177A SG87198A1 (en) 2000-02-11 2001-01-10 Polishing composition

Country Status (7)

Country Link
US (1) US6355075B1 (ko)
EP (1) EP1125999B1 (ko)
JP (1) JP3874068B2 (ko)
KR (1) KR100681216B1 (ko)
DE (1) DE60109664T2 (ko)
SG (1) SG87198A1 (ko)
TW (1) TW526249B (ko)

Families Citing this family (88)

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KR100979071B1 (ko) * 2002-02-22 2010-08-31 에이저 시스템즈 인크 이중 배향 다결정성 재료의 화학 기계적 연마
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JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
TWI295950B (en) 2002-10-03 2008-04-21 Applied Materials Inc Method for reducing delamination during chemical mechanical polishing
GB2395486B (en) * 2002-10-30 2006-08-16 Kao Corp Polishing composition
KR100649859B1 (ko) * 2002-11-08 2006-11-24 제일모직주식회사 구리배선 연마용 ｃｍｐ 슬러리
KR100891612B1 (ko) * 2002-12-20 2009-04-08 주식회사 동진쎄미켐 구리 배선 공정에 대한 연마 효율 및 선택비가 우수한화학-기계적 연마 슬러리 조성물
KR100855474B1 (ko) * 2002-12-23 2008-09-01 주식회사 동진쎄미켐 산성 영역에서 콜로이달 실리카의 분산안정성과 과산화물산화제의 분해안정성이 뛰어난 구리 배선용 화학-기계적연마슬러리 조성물
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US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
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US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
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JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
JP4781693B2 (ja) * 2004-06-14 2011-09-28 花王株式会社 磁気ディスク基板のナノスクラッチの低減方法
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
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JP4954462B2 (ja) * 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法
EP1841831B1 (en) * 2005-01-24 2014-04-02 Showa Denko K.K. Polishing composition and polishing method
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
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US20060213868A1 (en) * 2005-03-23 2006-09-28 Siddiqui Junaid A Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
FR2890658B1 (fr) * 2005-09-09 2012-04-13 Kemesys Composition de polissage mecano chimique, procede de preparation et utilisation
US20070068901A1 (en) * 2005-09-29 2007-03-29 Wang Yuchun Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries
KR100772929B1 (ko) 2005-10-18 2007-11-02 테크노세미켐 주식회사 구리 다마신 공정용 화학-기계적 연마 슬러리 조성물
TW200720493A (en) * 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
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US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US20090206450A1 (en) * 2006-04-26 2009-08-20 Nxp B.V. Method of manufacturing a semiconductor device, semiconductor device obtained herewith, and slurry suitable for use in such a method
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP5305606B2 (ja) * 2007-03-22 2013-10-02 富士フイルム株式会社 金属用研磨液及び研磨方法
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
KR101279966B1 (ko) 2008-12-29 2013-07-05 제일모직주식회사 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101340550B1 (ko) 2010-12-31 2013-12-11 제일모직주식회사 화학기계적연마 조성물 및 연마 방법
EP2693459A4 (en) * 2011-03-30 2015-04-22 Fujimi Inc POLISHING COMPOSITION AND POLISHING METHOD
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
CN105778775B (zh) * 2014-12-23 2021-03-02 安集微电子（上海）有限公司 一种中性胶体二氧化硅的制备方法

Citations (2)

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Patent Citations (2)

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EP0846742A2 (en) * 1996-12-09 1998-06-10 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
WO1999061540A1 (en) * 1998-05-26 1999-12-02 Cabot Microelectronics Corporation Cmp slurry containing a solid catalyst

Also Published As

Publication number Publication date
EP1125999A1 (en) 2001-08-22
DE60109664T2 (de) 2006-03-30
TW526249B (en) 2003-04-01
DE60109664D1 (de) 2005-05-04
KR20010082027A (ko) 2001-08-29
KR100681216B1 (ko) 2007-02-09
EP1125999B1 (en) 2005-03-30
JP3874068B2 (ja) 2007-01-31
JP2001247853A (ja) 2001-09-14
US6355075B1 (en) 2002-03-12

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