SG87011A1 - Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide - Google Patents
Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guideInfo
- Publication number
- SG87011A1 SG87011A1 SG9804218A SG1998004218A SG87011A1 SG 87011 A1 SG87011 A1 SG 87011A1 SG 9804218 A SG9804218 A SG 9804218A SG 1998004218 A SG1998004218 A SG 1998004218A SG 87011 A1 SG87011 A1 SG 87011A1
- Authority
- SG
- Singapore
- Prior art keywords
- read head
- tunnel junction
- sensing layer
- magnetic tunnel
- flux guide
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/957,788 US5901018A (en) | 1997-10-24 | 1997-10-24 | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87011A1 true SG87011A1 (en) | 2002-03-19 |
Family
ID=25500136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9804218A SG87011A1 (en) | 1997-10-24 | 1998-10-16 | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide |
Country Status (8)
Country | Link |
---|---|
US (1) | US5901018A (ko) |
EP (1) | EP0911810B1 (ko) |
JP (1) | JP3004007B2 (ko) |
KR (1) | KR100295289B1 (ko) |
CN (1) | CN1139916C (ko) |
DE (1) | DE69835650T2 (ko) |
MY (1) | MY117419A (ko) |
SG (1) | SG87011A1 (ko) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869963A (en) * | 1996-09-12 | 1999-02-09 | Alps Electric Co., Ltd. | Magnetoresistive sensor and head |
JPH11175920A (ja) * | 1997-12-05 | 1999-07-02 | Nec Corp | 磁気抵抗効果型複合ヘッドおよびその製造方法 |
US6795280B1 (en) | 1998-11-18 | 2004-09-21 | Seagate Technology Llc | Tunneling magneto-resistive read head with two-piece free layer |
US6411478B1 (en) | 1999-02-11 | 2002-06-25 | Seagate Technology Llc | Spin tunnel junction recording heads using an edge junction structure with CIP |
US6462919B1 (en) * | 1999-04-28 | 2002-10-08 | Seagate Technology Llc | Spin valve sensor with exchange tabs |
US6433970B1 (en) | 1999-06-07 | 2002-08-13 | Read-Rite Corporation | Structure and method for redeposition free thin film CPP read sensor fabrication |
JP3592140B2 (ja) | 1999-07-02 | 2004-11-24 | Tdk株式会社 | トンネル磁気抵抗効果型ヘッド |
CN1214414C (zh) * | 1999-07-22 | 2005-08-10 | 皇家菲利浦电子有限公司 | 磁性沟道结器件的制造方法 |
KR100696333B1 (ko) * | 1999-08-31 | 2007-03-21 | 유티스타콤코리아 유한회사 | 디지털 라디오 시스템에서의 다양한 인터폴레이션 레이트를 지원하는 안티이미징 필터 |
US6493195B1 (en) * | 1999-09-01 | 2002-12-10 | Nec Corporation | Magnetoresistance element, with lower electrode anti-erosion/flaking layer |
US6421212B1 (en) | 1999-09-21 | 2002-07-16 | Read-Rite Corporation | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication |
JP3891540B2 (ja) * | 1999-10-25 | 2007-03-14 | キヤノン株式会社 | 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびmram |
US6721147B2 (en) | 1999-12-07 | 2004-04-13 | Fujitsu Limited | Longitudinally biased magnetoresistance effect magnetic head and magnetic reproducing apparatus |
US6556391B1 (en) * | 1999-12-07 | 2003-04-29 | Fujitsu Limited | Biasing layers for a magnetoresistance effect magnetic head using perpendicular current flow |
US6738234B1 (en) | 2000-03-15 | 2004-05-18 | Tdk Corporation | Thin film magnetic head and magnetic transducer |
US6603642B1 (en) | 2000-03-15 | 2003-08-05 | Tdk Corporation | Magnetic transducer having a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers and a fixed-orientation-of-magnetization layer and thin film magnetic head including the magnetic transducer |
US6639763B1 (en) | 2000-03-15 | 2003-10-28 | Tdk Corporation | Magnetic transducer and thin film magnetic head |
JP3468419B2 (ja) | 2000-03-17 | 2003-11-17 | Tdk株式会社 | トンネル磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置 |
US6519124B1 (en) | 2000-03-27 | 2003-02-11 | Tdk Corporation | Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide |
JP2001307307A (ja) * | 2000-04-19 | 2001-11-02 | Tdk Corp | トンネル磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置 |
US6473275B1 (en) * | 2000-06-06 | 2002-10-29 | International Business Machines Corporation | Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
JP2002033532A (ja) * | 2000-07-17 | 2002-01-31 | Alps Electric Co Ltd | トンネル型磁気抵抗効果型素子及びその製造方法 |
JP2002050011A (ja) * | 2000-08-03 | 2002-02-15 | Nec Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム |
US6542343B1 (en) | 2000-08-09 | 2003-04-01 | International Business Machines Corporation | Tunnel valve head design to lower resistance |
US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
US6567244B1 (en) | 2000-10-10 | 2003-05-20 | Hitachi Global Storage Technologies Netherlands | Differential yoke type read head |
JPWO2002050924A1 (ja) * | 2000-12-21 | 2004-04-22 | 富士通株式会社 | 磁気抵抗効果素子、磁気ヘッド及びこれを用いる磁気再生装置 |
US6667862B2 (en) | 2001-02-20 | 2003-12-23 | Carnegie Mellon University | Magnetoresistive read head having permanent magnet on top of magnetoresistive element |
US6661625B1 (en) | 2001-02-20 | 2003-12-09 | Kyusik Sin | Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier |
US6597546B2 (en) * | 2001-04-19 | 2003-07-22 | International Business Machines Corporation | Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guide |
US6833982B2 (en) | 2001-05-03 | 2004-12-21 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic tunnel junction sensor with a free layer biased by longitudinal layers interfacing top surfaces of free layer extensions which extend beyond an active region of the sensor |
US6721139B2 (en) * | 2001-05-31 | 2004-04-13 | International Business Machines Corporation | Tunnel valve sensor with narrow gap flux guide employing a lamination of FeN and NiFeMo |
US6680830B2 (en) | 2001-05-31 | 2004-01-20 | International Business Machines Corporation | Tunnel valve sensor and flux guide with improved flux transfer therebetween |
US6655006B2 (en) | 2001-06-28 | 2003-12-02 | International Business Machines Corporation | Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer |
US7057864B2 (en) * | 2001-07-10 | 2006-06-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for achieving physical connection between the flux guide and the free layer and that insulates the flux guide from the shields |
US6657825B2 (en) | 2001-08-02 | 2003-12-02 | International Business Machines Corporation | Self aligned magnetoresistive flux guide read head with exchange bias underneath free layer |
US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
US6826022B2 (en) * | 2001-08-13 | 2004-11-30 | Alps Electric Co., Ltd. | CPP type magnetic sensor or magnetic sensor using tunnel effect, and manufacturing method therefor |
US6992870B2 (en) * | 2001-10-25 | 2006-01-31 | Tdk Corporation | Magneto-resistive device, and magnetic head and head suspension assembly using same |
US6888705B2 (en) * | 2002-01-18 | 2005-05-03 | Hitachi Global Storage Technologies Netherlands B.V. | High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS) |
US6754056B2 (en) * | 2002-01-18 | 2004-06-22 | International Business Machines Corporation | Read head having a tunnel junction sensor with a free layer biased by exchange coupling with insulating antiferromagnetic (AFM) layers |
US6757144B2 (en) | 2002-01-18 | 2004-06-29 | International Business Machines Corporation | Flux guide read head with in stack biased current perpendicular to the planes (CPP) sensor |
US6756648B2 (en) * | 2002-03-25 | 2004-06-29 | International Business Machines Corporation | System and method for stabilizing a magnetic tunnel junction sensor |
JP3749873B2 (ja) * | 2002-03-28 | 2006-03-01 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6801410B2 (en) * | 2002-06-03 | 2004-10-05 | Seagate Technology Llc | Side flux guide for current perpendicular to plane magnetoresistive transducer |
US6819530B2 (en) | 2002-09-25 | 2004-11-16 | International Business Machines Corporation | Current perpendicular to the planes (CPP) sensor with free layer stabilized by current field |
US7068537B2 (en) * | 2002-11-06 | 2006-06-27 | Interuniversitair Microelektronica Centrum (Imec) | Magnetic device and method of making the same |
CN1898574B (zh) * | 2003-12-23 | 2011-09-07 | Nxp股份有限公司 | 高灵敏度磁性内置电流传感器 |
US7264974B2 (en) * | 2004-01-30 | 2007-09-04 | Headway Technologies, Inc. | Method for fabricating a low resistance TMR read head |
US7463459B2 (en) * | 2004-02-18 | 2008-12-09 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned read sensor design with enhanced lead stabilizing mechanism |
US20060171197A1 (en) * | 2005-01-31 | 2006-08-03 | Ulrich Klostermann | Magnetoresistive memory element having a stacked structure |
US7515381B2 (en) * | 2005-12-22 | 2009-04-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for fabricating a side shield for a flux guide layer for perpendicular magnetic recording |
US7599153B2 (en) | 2006-02-27 | 2009-10-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus providing a stabilized top shield in read head for magnetic recording |
US7848061B2 (en) * | 2006-03-14 | 2010-12-07 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide |
US7719801B2 (en) * | 2006-04-18 | 2010-05-18 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetoresistive (MR) element having a continuous flux guide defined by the free layer |
JP2008052885A (ja) * | 2006-07-28 | 2008-03-06 | Fujitsu Ltd | 磁気センサ及び磁気ディスク装置 |
JP4952725B2 (ja) | 2009-01-14 | 2012-06-13 | ソニー株式会社 | 不揮発性磁気メモリ装置 |
TWI434025B (zh) * | 2010-02-11 | 2014-04-11 | Geeng Jen Sheu | Non - contact sensing device |
US9627061B2 (en) | 2013-03-04 | 2017-04-18 | SK Hynix Inc. | Electronic device having resistance element |
KR102008412B1 (ko) | 2013-03-04 | 2019-08-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
GB201519905D0 (en) * | 2015-11-11 | 2015-12-23 | Analog Devices Global | A thin film resistive device for use in an integrated circuit, an integrated cicruit including a thin film resistive device |
US10748560B2 (en) | 2017-12-11 | 2020-08-18 | International Business Machines Corporation | Apparatus having low-contact-pressure head-tape interface |
US10650846B2 (en) | 2017-12-11 | 2020-05-12 | International Business Machines Corporation | Apparatus having recessed TMR read sensor structures for robust head-tape interface |
US10726868B2 (en) | 2017-12-12 | 2020-07-28 | International Business Machines Corporation | Apparatus having an array of write transducers having a low friction interface |
US10755732B2 (en) * | 2017-12-12 | 2020-08-25 | International Business Machines Corporation | Apparatus having sensors with hard spacers and low-contact-pressure head-tape interface |
US11205447B2 (en) | 2019-08-21 | 2021-12-21 | Headway Technologies, Inc. | Reader noise reduction using spin hall effects |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0768643A2 (en) * | 1995-10-10 | 1997-04-16 | Read-Rite Corporation | High density giant magnetoresistive transducer with recessed sensor |
EP0782129A2 (en) * | 1995-12-29 | 1997-07-02 | Read-Rite Corporation | Magnetoresistive cpp mode transducer with multiple spin valve members |
EP0791916A2 (en) * | 1996-02-22 | 1997-08-27 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
JPH0766033A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
US5629922A (en) * | 1995-02-22 | 1997-05-13 | Massachusetts Institute Of Technology | Electron tunneling device using ferromagnetic thin films |
JP3217703B2 (ja) * | 1995-09-01 | 2001-10-15 | 株式会社東芝 | 磁性体デバイス及びそれを用いた磁気センサ |
US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
-
1997
- 1997-10-24 US US08/957,788 patent/US5901018A/en not_active Expired - Lifetime
-
1998
- 1998-09-15 KR KR1019980037935A patent/KR100295289B1/ko not_active IP Right Cessation
- 1998-09-22 MY MYPI98004346A patent/MY117419A/en unknown
- 1998-10-12 JP JP10289013A patent/JP3004007B2/ja not_active Expired - Fee Related
- 1998-10-16 SG SG9804218A patent/SG87011A1/en unknown
- 1998-10-20 EP EP98308586A patent/EP0911810B1/en not_active Expired - Lifetime
- 1998-10-20 DE DE69835650T patent/DE69835650T2/de not_active Expired - Fee Related
- 1998-10-23 CN CNB981234275A patent/CN1139916C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0768643A2 (en) * | 1995-10-10 | 1997-04-16 | Read-Rite Corporation | High density giant magnetoresistive transducer with recessed sensor |
EP0782129A2 (en) * | 1995-12-29 | 1997-07-02 | Read-Rite Corporation | Magnetoresistive cpp mode transducer with multiple spin valve members |
EP0791916A2 (en) * | 1996-02-22 | 1997-08-27 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
Also Published As
Publication number | Publication date |
---|---|
DE69835650D1 (de) | 2006-10-05 |
JP3004007B2 (ja) | 2000-01-31 |
KR19990036636A (ko) | 1999-05-25 |
MY117419A (en) | 2004-06-30 |
EP0911810B1 (en) | 2006-08-23 |
DE69835650T2 (de) | 2007-09-13 |
KR100295289B1 (ko) | 2001-10-26 |
US5901018A (en) | 1999-05-04 |
EP0911810A3 (en) | 1999-10-27 |
JPH11213350A (ja) | 1999-08-06 |
CN1139916C (zh) | 2004-02-25 |
CN1215879A (zh) | 1999-05-05 |
EP0911810A2 (en) | 1999-04-28 |
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