SG82695A1 - Process for producing semiconductor device and semiconductor device produced thereby - Google Patents

Process for producing semiconductor device and semiconductor device produced thereby

Info

Publication number
SG82695A1
SG82695A1 SG200002903A SG200002903A SG82695A1 SG 82695 A1 SG82695 A1 SG 82695A1 SG 200002903 A SG200002903 A SG 200002903A SG 200002903 A SG200002903 A SG 200002903A SG 82695 A1 SG82695 A1 SG 82695A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
producing
produced
device produced
producing semiconductor
Prior art date
Application number
SG200002903A
Other languages
English (en)
Inventor
Ishitsuka Norio
Miura Hideo
Ikeda Shuji
Yoshida Yasuko
Suzuki Norio
Watanabe Kozo
Kanamitsu Kenji
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG82695A1 publication Critical patent/SG82695A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
SG200002903A 1999-06-01 2000-05-27 Process for producing semiconductor device and semiconductor device produced thereby SG82695A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15361099A JP3917327B2 (ja) 1999-06-01 1999-06-01 半導体装置の製造方法及び装置

Publications (1)

Publication Number Publication Date
SG82695A1 true SG82695A1 (en) 2001-08-21

Family

ID=15566259

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002903A SG82695A1 (en) 1999-06-01 2000-05-27 Process for producing semiconductor device and semiconductor device produced thereby

Country Status (7)

Country Link
US (2) US6635945B1 (zh)
JP (1) JP3917327B2 (zh)
KR (1) KR100399829B1 (zh)
CN (1) CN1145208C (zh)
MY (1) MY124777A (zh)
SG (1) SG82695A1 (zh)
TW (1) TW466549B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW388100B (en) * 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
KR100873358B1 (ko) * 2002-10-31 2008-12-10 매그나칩 반도체 유한회사 반도체소자의 소자분리막 제조방법
JP4694769B2 (ja) * 2003-01-27 2011-06-08 エルピーダメモリ株式会社 半導体装置の製造方法
US20050095808A1 (en) * 2003-11-04 2005-05-05 Industrial Technology Research Institute Thermal oxidation method for topographic feature corner rounding
KR100545182B1 (ko) * 2003-12-31 2006-01-24 동부아남반도체 주식회사 반도체 소자 및 그의 제조 방법
US7339253B2 (en) * 2004-08-16 2008-03-04 Taiwan Semiconductor Manufacturing Company Retrograde trench isolation structures
CN100350589C (zh) * 2005-01-18 2007-11-21 旺宏电子股份有限公司 由清洗形成圆滑边角的浅沟渠隔离方法
US7238564B2 (en) * 2005-03-10 2007-07-03 Taiwan Semiconductor Manufacturing Company Method of forming a shallow trench isolation structure
KR100688750B1 (ko) * 2005-08-18 2007-03-02 동부일렉트로닉스 주식회사 섀로우 트렌치 아이솔레이션의 제조방법
US7687370B2 (en) * 2006-01-27 2010-03-30 Freescale Semiconductor, Inc. Method of forming a semiconductor isolation trench
KR100780656B1 (ko) * 2006-06-29 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 리세스게이트 제조방법
KR100801062B1 (ko) * 2006-07-07 2008-02-04 삼성전자주식회사 트렌치 소자 분리 방법, 이를 이용한 게이트 구조물 형성방법 및 불 휘발성 메모리 소자 형성 방법
US8120094B2 (en) 2007-08-14 2012-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation with improved structure and method of forming
JP5635803B2 (ja) * 2010-05-07 2014-12-03 トランスフォーム・ジャパン株式会社 化合物半導体装置の製造方法及び化合物半導体装置
JP5630090B2 (ja) * 2010-06-17 2014-11-26 富士電機株式会社 半導体装置の製造方法
CN102842595B (zh) * 2011-06-20 2015-12-02 中国科学院微电子研究所 半导体器件及其制造方法
JP6154583B2 (ja) 2012-06-14 2017-06-28 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
KR101703539B1 (ko) 2015-02-10 2017-02-07 재단법인 아산사회복지재단 가이드 카테터
CN110137082A (zh) * 2018-02-09 2019-08-16 天津环鑫科技发展有限公司 一种功率器件沟槽形貌的优化方法
CN112086351A (zh) * 2019-06-13 2020-12-15 芯恩（青岛）集成电路有限公司 沟槽刻蚀方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536675A (en) * 1993-12-30 1996-07-16 Intel Corporation Isolation structure formation for semiconductor circuit fabrication
WO1998012742A1 (en) * 1996-09-17 1998-03-26 Hitachi, Ltd. Semiconductor device and method of fabricating the same

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US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
JPS60223153A (ja) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型キャパシタを有する半導体装置の製法
US4735824A (en) * 1985-05-31 1988-04-05 Kabushiki Kaisha Toshiba Method of manufacturing an MOS capacitor
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process
JPS63314844A (ja) * 1987-06-18 1988-12-22 Toshiba Corp 半導体装置の製造方法
US5258332A (en) * 1987-08-28 1993-11-02 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices including rounding of corner portions by etching
US4931409A (en) * 1988-01-30 1990-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having trench isolation
KR940003218B1 (ko) * 1988-03-24 1994-04-16 세이꼬 엡슨 가부시끼가이샤 반도체 장치 및 그 제조방법
KR960006714B1 (ko) * 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
US5448102A (en) * 1993-06-24 1995-09-05 Harris Corporation Trench isolation stress relief
US5358891A (en) * 1993-06-29 1994-10-25 Intel Corporation Trench isolation with planar topography and method of fabrication
JP2955459B2 (ja) 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JP3400846B2 (ja) * 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
JP3414590B2 (ja) * 1996-06-20 2003-06-09 株式会社東芝 半導体装置の製造方法
US5863827A (en) * 1997-06-03 1999-01-26 Texas Instruments Incorporated Oxide deglaze before sidewall oxidation of mesa or trench
US5880004A (en) * 1997-06-10 1999-03-09 Winbond Electronics Corp. Trench isolation process
US6002160A (en) * 1997-12-12 1999-12-14 Advanced Micro Devices, Inc. Semiconductor isolation process to minimize weak oxide problems
US6074932A (en) * 1998-01-28 2000-06-13 Texas Instruments - Acer Incorporated Method for forming a stress-free shallow trench isolation
US6274498B1 (en) * 1998-09-03 2001-08-14 Micron Technology, Inc. Methods of forming materials within openings, and method of forming isolation regions
US6372601B1 (en) * 1998-09-03 2002-04-16 Micron Technology, Inc. Isolation region forming methods
US6368941B1 (en) * 2000-11-08 2002-04-09 United Microelectronics Corp. Fabrication of a shallow trench isolation by plasma oxidation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536675A (en) * 1993-12-30 1996-07-16 Intel Corporation Isolation structure formation for semiconductor circuit fabrication
WO1998012742A1 (en) * 1996-09-17 1998-03-26 Hitachi, Ltd. Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
MY124777A (en) 2006-06-30
TW466549B (en) 2001-12-01
KR100399829B1 (ko) 2003-09-29
US6858515B2 (en) 2005-02-22
CN1145208C (zh) 2004-04-07
JP2000340558A (ja) 2000-12-08
CN1275801A (zh) 2000-12-06
KR20010020932A (ko) 2001-03-15
US20040077152A1 (en) 2004-04-22
JP3917327B2 (ja) 2007-05-23
US6635945B1 (en) 2003-10-21

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