SG90155A1 - A semiconductor device and a process for producing the same - Google Patents

A semiconductor device and a process for producing the same

Info

Publication number
SG90155A1
SG90155A1 SG200004417A SG200004417A SG90155A1 SG 90155 A1 SG90155 A1 SG 90155A1 SG 200004417 A SG200004417 A SG 200004417A SG 200004417 A SG200004417 A SG 200004417A SG 90155 A1 SG90155 A1 SG 90155A1
Authority
SG
Singapore
Prior art keywords
producing
same
semiconductor device
semiconductor
Prior art date
Application number
SG200004417A
Inventor
Akiyama Yukiharu
Shibamoto Masanori
Kudaishi Tomoaki
Arita Junichi
Original Assignee
Hitachi Ulsi Sys Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ulsi Sys Co Ltd, Hitachi Ltd filed Critical Hitachi Ulsi Sys Co Ltd
Publication of SG90155A1 publication Critical patent/SG90155A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
SG200004417A 1999-09-17 2000-08-08 A semiconductor device and a process for producing the same SG90155A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26301699A JP2001085565A (en) 1999-09-17 1999-09-17 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
SG90155A1 true SG90155A1 (en) 2002-07-23

Family

ID=17383723

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200004417A SG90155A1 (en) 1999-09-17 2000-08-08 A semiconductor device and a process for producing the same

Country Status (5)

Country Link
JP (1) JP2001085565A (en)
KR (1) KR20010070081A (en)
CN (1) CN1289143A (en)
SG (1) SG90155A1 (en)
TW (1) TW504778B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10014305C2 (en) * 2000-03-23 2002-02-07 Infineon Technologies Ag Electronic component with a large number of contact bumps
US6589820B1 (en) 2000-06-16 2003-07-08 Micron Technology, Inc. Method and apparatus for packaging a microelectronic die
US6483044B1 (en) 2000-08-23 2002-11-19 Micron Technology, Inc. Interconnecting substrates for electrical coupling of microelectronic components
US6838760B1 (en) * 2000-08-28 2005-01-04 Micron Technology, Inc. Packaged microelectronic devices with interconnecting units
KR100694425B1 (en) * 2002-05-06 2007-03-12 앰코 테크놀로지 코리아 주식회사 manufacturing method of semiconductor package
KR200453796Y1 (en) * 2009-04-03 2011-05-27 주식회사 마그마 Metal dome switch for keypad
CN103079352A (en) * 2012-12-29 2013-05-01 中国航空工业集团公司第六三一研究所 Reinforcing method for printed plate
JP6162428B2 (en) * 2013-02-27 2017-07-12 日本特殊陶業株式会社 Support device
CN109075089B (en) * 2016-05-18 2021-12-17 三菱电机株式会社 Power semiconductor device and method for manufacturing the same
US20180114786A1 (en) * 2016-10-21 2018-04-26 Powertech Technology Inc. Method of forming package-on-package structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0883180A2 (en) * 1997-06-06 1998-12-09 Hitachi, Ltd. Semiconductor device and wiring tape for semiconductor device
JPH11145345A (en) * 1997-11-12 1999-05-28 Hitachi Ltd Semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0883180A2 (en) * 1997-06-06 1998-12-09 Hitachi, Ltd. Semiconductor device and wiring tape for semiconductor device
JPH11145345A (en) * 1997-11-12 1999-05-28 Hitachi Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JP2001085565A (en) 2001-03-30
KR20010070081A (en) 2001-07-25
TW504778B (en) 2002-10-01
CN1289143A (en) 2001-03-28

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