SG82680A1 - Thin film transistors with organic-inorganic hybrid materials as semiconducting channels - Google Patents

Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

Info

Publication number
SG82680A1
SG82680A1 SG200000788A SG200000788A SG82680A1 SG 82680 A1 SG82680 A1 SG 82680A1 SG 200000788 A SG200000788 A SG 200000788A SG 200000788 A SG200000788 A SG 200000788A SG 82680 A1 SG82680 A1 SG 82680A1
Authority
SG
Singapore
Prior art keywords
organic
thin film
film transistors
inorganic hybrid
hybrid materials
Prior art date
Application number
SG200000788A
Other languages
English (en)
Inventor
Chondroudis Konstantinos
Dimitrios Dimitrakopo Christos
Kagan Cherie
Kymissis Ioannis
Mitzi David
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG82680A1 publication Critical patent/SG82680A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
SG200000788A 1999-03-03 2000-02-11 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels SG82680A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/261,515 US6180956B1 (en) 1999-03-03 1999-03-03 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

Publications (1)

Publication Number Publication Date
SG82680A1 true SG82680A1 (en) 2001-08-21

Family

ID=22993656

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000788A SG82680A1 (en) 1999-03-03 2000-02-11 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

Country Status (7)

Country Link
US (1) US6180956B1 (zh)
JP (1) JP3872246B2 (zh)
KR (1) KR100351651B1 (zh)
CN (1) CN1145218C (zh)
DE (1) DE10006257B8 (zh)
SG (1) SG82680A1 (zh)
TW (1) TW461116B (zh)

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Also Published As

Publication number Publication date
DE10006257B8 (de) 2006-12-14
KR20000062567A (ko) 2000-10-25
CN1266287A (zh) 2000-09-13
CN1145218C (zh) 2004-04-07
US6180956B1 (en) 2001-01-30
JP2000260999A (ja) 2000-09-22
TW461116B (en) 2001-10-21
KR100351651B1 (ko) 2002-09-11
JP3872246B2 (ja) 2007-01-24
DE10006257B4 (de) 2006-06-29
DE10006257A1 (de) 2000-09-14

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