SG71185A1 - Heat treatment apparatus heat treatment process employing the same and process for producing semiconductor article - Google Patents

Heat treatment apparatus heat treatment process employing the same and process for producing semiconductor article

Info

Publication number
SG71185A1
SG71185A1 SG1998005898A SG1998005898A SG71185A1 SG 71185 A1 SG71185 A1 SG 71185A1 SG 1998005898 A SG1998005898 A SG 1998005898A SG 1998005898 A SG1998005898 A SG 1998005898A SG 71185 A1 SG71185 A1 SG 71185A1
Authority
SG
Singapore
Prior art keywords
heat treatment
same
producing semiconductor
semiconductor article
treatment apparatus
Prior art date
Application number
SG1998005898A
Other languages
English (en)
Inventor
Masataka Ito
Nobuhiko Sato
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG71185A1 publication Critical patent/SG71185A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
SG1998005898A 1997-12-26 1998-12-22 Heat treatment apparatus heat treatment process employing the same and process for producing semiconductor article SG71185A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36108797 1997-12-26

Publications (1)

Publication Number Publication Date
SG71185A1 true SG71185A1 (en) 2000-03-21

Family

ID=18472147

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998005898A SG71185A1 (en) 1997-12-26 1998-12-22 Heat treatment apparatus heat treatment process employing the same and process for producing semiconductor article

Country Status (7)

Country Link
US (1) US6407367B1 (zh)
EP (1) EP0926707A3 (zh)
KR (1) KR100276051B1 (zh)
CN (1) CN1225501A (zh)
AU (1) AU746600B2 (zh)
SG (1) SG71185A1 (zh)
TW (1) TW478071B (zh)

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DE60028091T2 (de) * 2000-02-07 2006-12-21 Tokyo Electron Ltd. Quarzglasbauteil für halbleiterherstellungsanlage und verfahren zur metalluntersuchung in einem quarzglasbauteil
US6600173B2 (en) * 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering
JP2002110949A (ja) * 2000-09-28 2002-04-12 Canon Inc Ｓｏｉの熱処理方法及び製造方法
US6660606B2 (en) 2000-09-29 2003-12-09 Canon Kabushiki Kaisha Semiconductor-on-insulator annealing method
JP2002110688A (ja) 2000-09-29 2002-04-12 Canon Inc Ｓｏｉの熱処理方法及び製造方法
WO2002047142A1 (fr) * 2000-12-05 2002-06-13 Tokyo Electron Limited Procede et appareil de traitement d'un article a traiter
JP2002270614A (ja) * 2001-03-12 2002-09-20 Canon Inc Ｓｏｉ基体、その熱処理方法、それを有する半導体装置およびその製造方法
US7118780B2 (en) * 2001-03-16 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Heat treatment method
JP2002280354A (ja) * 2001-03-19 2002-09-27 Osaka Prefecture 炭素薄膜のエッチング方法及びエッチング装置
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
JP2002334868A (ja) 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6821378B1 (en) * 2001-05-25 2004-11-23 Lam Research Corporation Pump baffle and screen to improve etch uniformity
US6488768B1 (en) * 2001-07-17 2002-12-03 Seh America, Inc. Method and apparatus for treating discharge gas from a Czochralski crystal growing chamber utilizing water spray
US20050121143A1 (en) * 2002-05-23 2005-06-09 Lam Research Corporation Pump baffle and screen to improve etch uniformity
JP4523225B2 (ja) * 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
JP4607678B2 (ja) * 2005-06-15 2011-01-05 東京エレクトロン株式会社 熱処理装置、ヒータ及びヒータの製造方法
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
US20070210056A1 (en) * 2005-11-16 2007-09-13 Redi-Kwick Corp. Infrared oven
US20090008379A1 (en) * 2007-05-18 2009-01-08 Redi-Kwick Corp. Infrared oven
JP5176771B2 (ja) * 2008-08-14 2013-04-03 信越半導体株式会社 縦型熱処理装置及び熱処理方法
JP5188326B2 (ja) * 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP2011066219A (ja) * 2009-09-17 2011-03-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
CN102095310B (zh) * 2011-01-20 2012-08-01 首钢总公司 一种双室双温管式气氛综合电阻炉及其使用方法
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5645718B2 (ja) * 2011-03-07 2014-12-24 東京エレクトロン株式会社 熱処理装置
WO2015147162A1 (ja) * 2014-03-27 2015-10-01 スズキ株式会社 アルミニウム部材の表面被覆方法及び表面被覆アルミニウム部材並びに内燃機関用ピストン
JP6418498B2 (ja) 2014-03-27 2018-11-07 スズキ株式会社 陽極酸化処理方法及び内燃機関の構造
JP5904425B2 (ja) 2014-03-27 2016-04-13 スズキ株式会社 陽極酸化皮膜及びその処理方法並びに内燃機関用ピストン
JP7216537B2 (ja) * 2018-12-13 2023-02-01 オリンパス株式会社 加熱炉
KR102206215B1 (ko) * 2018-12-28 2021-01-22 (주)피앤테크 웨이퍼 증착용 석영관의 실란가스 접촉 방지방법

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Also Published As

Publication number Publication date
TW478071B (en) 2002-03-01
CN1225501A (zh) 1999-08-11
KR19990063516A (ko) 1999-07-26
EP0926707A3 (en) 2004-01-21
AU746600B2 (en) 2002-05-02
EP0926707A2 (en) 1999-06-30
KR100276051B1 (ko) 2000-12-15
US6407367B1 (en) 2002-06-18
AU9819198A (en) 1999-07-15

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