SG71152A1 - Ferroelectric memory transistor with resistively coupled floating gate - Google Patents

Ferroelectric memory transistor with resistively coupled floating gate

Info

Publication number
SG71152A1
SG71152A1 SG1998003606A SG1998003606A SG71152A1 SG 71152 A1 SG71152 A1 SG 71152A1 SG 1998003606 A SG1998003606 A SG 1998003606A SG 1998003606 A SG1998003606 A SG 1998003606A SG 71152 A1 SG71152 A1 SG 71152A1
Authority
SG
Singapore
Prior art keywords
floating gate
ferroelectric memory
memory transistor
resistively coupled
coupled floating
Prior art date
Application number
SG1998003606A
Other languages
English (en)
Inventor
Charles Thomas Black
Jeffrey John Welser
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG71152A1 publication Critical patent/SG71152A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG1998003606A 1997-09-15 1998-09-11 Ferroelectric memory transistor with resistively coupled floating gate SG71152A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/929,878 US6069381A (en) 1997-09-15 1997-09-15 Ferroelectric memory transistor with resistively coupled floating gate

Publications (1)

Publication Number Publication Date
SG71152A1 true SG71152A1 (en) 2000-03-21

Family

ID=25458627

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998003606A SG71152A1 (en) 1997-09-15 1998-09-11 Ferroelectric memory transistor with resistively coupled floating gate

Country Status (6)

Country Link
US (2) US6069381A (zh)
JP (1) JP3287460B2 (zh)
KR (1) KR100276850B1 (zh)
CN (1) CN1147001C (zh)
SG (1) SG71152A1 (zh)
TW (1) TW425720B (zh)

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US6274900B1 (en) 1998-01-05 2001-08-14 Texas Instruments Incorporated Semiconductor device architectures including UV transmissive nitride layers
DE19851866C1 (de) 1998-11-10 2000-03-23 Siemens Ag Speicherzellenanordnung
DE19854418C2 (de) * 1998-11-25 2002-04-25 Infineon Technologies Ag Halbleiterbauelement mit zumindest einem Kondensator sowie Verfahren zu dessen Herstellung
JP4212079B2 (ja) * 2000-01-11 2009-01-21 ローム株式会社 表示装置およびその駆動方法
JP2001358310A (ja) * 2000-06-12 2001-12-26 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7030435B2 (en) * 2000-08-24 2006-04-18 Cova Technologies, Inc. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6714473B1 (en) * 2001-11-30 2004-03-30 Cypress Semiconductor Corp. Method and architecture for refreshing a 1T memory proportional to temperature
JP3622055B2 (ja) 2002-03-26 2005-02-23 松下電器産業株式会社 半導体装置及びその製造方法
US6818553B1 (en) 2002-05-15 2004-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Etching process for high-k gate dielectrics
US7066088B2 (en) * 2002-07-31 2006-06-27 Day International, Inc. Variable cut-off offset press system and method of operation
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6660588B1 (en) 2002-09-16 2003-12-09 Advanced Micro Devices, Inc. High density floating gate flash memory and fabrication processes therefor
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6714435B1 (en) * 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
GB2395065B (en) * 2002-10-30 2005-01-19 Toumaz Technology Ltd Floating gate transistors
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7008833B2 (en) * 2004-01-12 2006-03-07 Sharp Laboratories Of America, Inc. In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
KR100682913B1 (ko) * 2005-01-06 2007-02-15 삼성전자주식회사 하이브리드 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
KR100624463B1 (ko) * 2005-03-12 2006-09-19 삼성전자주식회사 노어 구조의 하이브리드 멀티비트 비휘발성 메모리 소자 및그 동작 방법
US7492635B2 (en) * 2005-01-06 2009-02-17 Samsung Electronics Co., Ltd. NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
KR100745902B1 (ko) * 2005-10-24 2007-08-02 주식회사 하이닉스반도체 비휘발성 강유전체 메모리 장치
DE102009038709B4 (de) 2009-08-25 2017-05-11 Infineon Technologies Austria Ag Halbleiterbauelement mit dielektrischem Schichtstapel
US8228730B2 (en) 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
TWI451570B (zh) * 2011-11-15 2014-09-01 Univ Nat Chiao Tung 多位元電阻切換記憶體元件與陣列
JP5888555B2 (ja) * 2012-01-25 2016-03-22 エスアイアイ・セミコンダクタ株式会社 不揮発性半導体記憶装置
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
TWI485706B (zh) * 2013-02-07 2015-05-21 Winbond Electronics Corp 電阻式記憶體及其記憶胞
CN105762178A (zh) * 2016-03-04 2016-07-13 西安电子科技大学 基于GeSn材料的铁电场效应晶体管及其制备方法
CN105633169A (zh) * 2016-03-04 2016-06-01 西安电子科技大学 基于InAs材料的铁电场效应晶体管及其制备方法
US10553708B2 (en) * 2017-08-29 2020-02-04 International Business Machines Corporation Twin gate tunnel field-effect transistor (FET)
CN109801977A (zh) * 2019-01-28 2019-05-24 中国科学院微电子研究所 存储器
CN112349775B (zh) * 2020-09-16 2022-12-02 清华大学 超陡亚阈值摆幅器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
JP3264506B2 (ja) * 1991-11-18 2002-03-11 ローム株式会社 強誘電体不揮発性記憶装置
JPH05335590A (ja) * 1992-05-29 1993-12-17 Rohm Co Ltd 半導体記憶装置
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JPH06151762A (ja) * 1992-11-13 1994-05-31 Ricoh Co Ltd 強誘電体材料およびそれを使用した強誘電体メモリ素子
US5640345A (en) * 1993-10-01 1997-06-17 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and fabrication process
US5511020A (en) * 1993-11-23 1996-04-23 Monolithic System Technology, Inc. Pseudo-nonvolatile memory incorporating data refresh operation

Also Published As

Publication number Publication date
KR19990029298A (ko) 1999-04-26
US6069381A (en) 2000-05-30
KR100276850B1 (ko) 2001-02-01
CN1147001C (zh) 2004-04-21
US20010045595A1 (en) 2001-11-29
JP3287460B2 (ja) 2002-06-04
TW425720B (en) 2001-03-11
CN1211827A (zh) 1999-03-24
JPH11135737A (ja) 1999-05-21

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