SG68679A1 - Gas ionisation in a cathode arc source - Google Patents
Gas ionisation in a cathode arc sourceInfo
- Publication number
- SG68679A1 SG68679A1 SG1998003142A SG1998003142A SG68679A1 SG 68679 A1 SG68679 A1 SG 68679A1 SG 1998003142 A SG1998003142 A SG 1998003142A SG 1998003142 A SG1998003142 A SG 1998003142A SG 68679 A1 SG68679 A1 SG 68679A1
- Authority
- SG
- Singapore
- Prior art keywords
- arc
- cathode
- arc source
- cathode arc
- gas ionisation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electron Sources, Ion Sources (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
- ing And Chemical Polishing (AREA)
- Discharge Heating (AREA)
- Plasma Technology (AREA)
- Sampling And Sample Adjustment (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9503305.6A GB9503305D0 (en) | 1995-02-20 | 1995-02-20 | Filtered cathodic arc source |
Publications (1)
Publication Number | Publication Date |
---|---|
SG68679A1 true SG68679A1 (en) | 2000-05-23 |
Family
ID=10769900
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998003143A SG68680A1 (en) | 1995-02-20 | 1996-02-20 | Cathode arc source with cathode changer |
SG1998003140A SG68678A1 (en) | 1995-02-20 | 1996-02-20 | Ignition means for a cathode arc source |
SG1998003142A SG68679A1 (en) | 1995-02-20 | 1996-02-20 | Gas ionisation in a cathode arc source |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998003143A SG68680A1 (en) | 1995-02-20 | 1996-02-20 | Cathode arc source with cathode changer |
SG1998003140A SG68678A1 (en) | 1995-02-20 | 1996-02-20 | Ignition means for a cathode arc source |
Country Status (8)
Country | Link |
---|---|
US (2) | US6031239A (fr) |
EP (1) | EP0811236B1 (fr) |
AT (1) | ATE210337T1 (fr) |
AU (1) | AU4726596A (fr) |
DE (1) | DE69617645D1 (fr) |
GB (1) | GB9503305D0 (fr) |
SG (3) | SG68680A1 (fr) |
WO (1) | WO1996026531A2 (fr) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998045871A1 (fr) * | 1997-04-04 | 1998-10-15 | Alexander Igorevich Dodonov | Production d'un plasma par arc electrique dans un guide a plasma curviligne et revetement de substrat |
GB9722645D0 (en) | 1997-10-24 | 1997-12-24 | Univ Nanyang | Enhanced macroparticle filter and cathode arc source |
GB9722650D0 (en) | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source with target feeding apparatus |
US7014738B2 (en) | 1997-10-24 | 2006-03-21 | Filplas Vacuum Technology Pte Ltd. | Enhanced macroparticle filter and cathode arc source |
TW521294B (en) * | 1998-03-06 | 2003-02-21 | Seiko Instr Inc | Focused ion beam system |
CA2256847A1 (fr) * | 1998-12-22 | 2000-06-22 | Munther Kandah | Source ionique exempte de particules pour arc cathodique au carbone |
GB9910842D0 (en) * | 1999-05-10 | 1999-07-07 | Univ Nanyang | Composite coatings |
DE19924094C2 (de) * | 1999-05-21 | 2003-04-30 | Fraunhofer Ges Forschung | Vakuumbogenverdampfer und Verfahren zu seinem Betrieb |
RU2186151C2 (ru) * | 1999-12-29 | 2002-07-27 | Закрытое акционерное общество "Патинор Коутингс Лимитед" | Устройство для нанесения покрытий в вакууме |
JP3860954B2 (ja) | 2000-07-07 | 2006-12-20 | 株式会社日立グローバルストレージテクノロジーズ | リアルタイムパーティクルフィルタを具備したプラズマ処理装置 |
JP2002105628A (ja) * | 2000-10-03 | 2002-04-10 | Nissin Electric Co Ltd | 真空アーク蒸着装置 |
US7271489B2 (en) * | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
AU2002243574A1 (en) * | 2001-01-17 | 2002-07-30 | Research Foundation Of The City University Of New York | Method for making a film by pulsed laser ablation |
US6984675B2 (en) * | 2001-11-28 | 2006-01-10 | Resolution Specialty Materials Llc | Formaldehyde-free binder compositions for simultaneous warp sizing and coloration of filament yarns |
US7033462B2 (en) | 2001-11-30 | 2006-04-25 | Nissin Electric Co., Ltd. | Vacuum arc vapor deposition process and apparatus |
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US6923891B2 (en) * | 2003-01-10 | 2005-08-02 | Nanofilm Technologies International Pte Ltd. | Copper interconnects |
US20050095187A1 (en) * | 2003-11-05 | 2005-05-05 | Huan-Liang Tzeng | Insert liner for chamber entrance |
GB2410254A (en) * | 2004-01-21 | 2005-07-27 | Nanofilm Technologies Int | Method of reducing stress in coatings produced by physical vapour deposition |
GB0404436D0 (en) * | 2004-02-27 | 2004-03-31 | Nanofilm Technologies Int | Continuous arc deposition apparatus and method with multiple available targets |
JP4373252B2 (ja) * | 2004-03-16 | 2009-11-25 | 浩史 滝川 | プラズマ生成装置 |
CH697552B1 (de) * | 2004-11-12 | 2008-11-28 | Oerlikon Trading Ag | Vakuumbehandlungsanlage. |
US20060177610A1 (en) * | 2005-02-09 | 2006-08-10 | Arrow International Limited | Sealing of Plastic Containers |
KR100924725B1 (ko) * | 2005-04-26 | 2009-11-04 | 가부시키가이샤 시마쓰세사쿠쇼 | 표면파 여기 플라즈마 발생 장치 및 표면파 여기 플라즈마처리 장치 |
JP2007077494A (ja) * | 2005-08-08 | 2007-03-29 | Nanofilm Technologies Internatl Pte Ltd | 金属コーティング |
US7507972B2 (en) * | 2005-10-10 | 2009-03-24 | Owlstone Nanotech, Inc. | Compact ionization source |
US7658802B2 (en) * | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
US20100131023A1 (en) * | 2006-06-21 | 2010-05-27 | Benedict James Costello | Implantable medical devices comprising cathodic arc produced structures |
DE102006034988B4 (de) * | 2006-07-28 | 2008-10-30 | Deutsches Elektronen-Synchrotron Desy | Ionenquelle zur Erzeugung negativ geladener Ionen |
US7963076B2 (en) * | 2006-09-11 | 2011-06-21 | Dana Innovations | Devices and methods for flangeless installations |
CN100460556C (zh) * | 2006-11-02 | 2009-02-11 | 上海交通大学 | 自由开放式线圈过滤器 |
US8956288B2 (en) | 2007-02-14 | 2015-02-17 | Proteus Digital Health, Inc. | In-body power source having high surface area electrode |
US8158216B2 (en) * | 2007-10-31 | 2012-04-17 | Metascape Llc | Spinulose titanium nanoparticulate surfaces |
US8330127B2 (en) * | 2008-03-31 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | Flexible ion source |
JP4633816B2 (ja) * | 2008-03-31 | 2011-02-16 | 株式会社フェローテック | ターゲット交換式プラズマ発生装置 |
US7914603B2 (en) * | 2008-06-26 | 2011-03-29 | Mks Instruments, Inc. | Particle trap for a plasma source |
DE102008057020A1 (de) * | 2008-11-12 | 2010-05-20 | Oerlikon Trading Ag, Trübbach | Zündvorrichtung für Arc Quellen |
DE102009004158B4 (de) * | 2009-01-09 | 2023-03-30 | Bayerische Motoren Werke Aktiengesellschaft | Verfahren und Vorrichtung zur Funktionsflächenbeschichtung |
US20100190036A1 (en) * | 2009-01-27 | 2010-07-29 | Kyriakos Komvopoulos | Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc |
JP4576467B2 (ja) * | 2009-03-31 | 2010-11-10 | 株式会社フェローテック | 絶縁体介装型プラズマ処理装置 |
JP5644085B2 (ja) * | 2009-06-10 | 2014-12-24 | 富士通株式会社 | 成膜装置及び成膜方法 |
JP2010287268A (ja) * | 2009-06-10 | 2010-12-24 | Fuji Electric Device Technology Co Ltd | フィルタードカソーディックアーク装置およびそれを用いて成膜したカーボン保護膜 |
US9024273B2 (en) * | 2010-04-20 | 2015-05-05 | Varian Semiconductor Equipment Associates, Inc. | Method to generate molecular ions from ions with a smaller atomic mass |
GB201016501D0 (en) * | 2010-10-01 | 2010-11-17 | Nanofilm Technologies Internat Pte Ltd | Filter for removing macro-particles from a plasma beam |
WO2014136253A1 (fr) * | 2013-03-08 | 2014-09-12 | 株式会社島津製作所 | Dispositif de formation de film par plasma d'arc |
JP5965058B2 (ja) * | 2013-05-23 | 2016-08-03 | キヤノンアネルバ株式会社 | 成膜装置 |
JP6222553B2 (ja) | 2013-09-13 | 2017-11-01 | 株式会社リコー | 現像装置、プロセスカートリッジ及び画像形成装置 |
JP6632790B2 (ja) | 2014-02-10 | 2020-01-22 | 株式会社リコー | 現像装置及び画像形成装置 |
SG11201603358PA (en) * | 2014-03-04 | 2016-09-29 | Canon Anelva Corp | Vacuum process apparatus and vacuum process method |
SG11201606347XA (en) | 2014-03-18 | 2016-09-29 | Canon Anelva Corp | Deposition apparatus |
MY183150A (en) | 2014-03-25 | 2021-02-16 | Fuji Electric Malaysia Sdn Bhd | Protective layer for a magnetic recording medium, and a method of manufacturing the same |
EP2947516A1 (fr) | 2014-05-22 | 2015-11-25 | Ricoh Company, Ltd. | Dispositif de développement, appareil de formation d'images et cartouche de traitement les intégrant |
JP6347414B2 (ja) * | 2014-11-04 | 2018-06-27 | 日新イオン機器株式会社 | 質量分析電磁石 |
JP6059195B2 (ja) | 2014-11-06 | 2017-01-11 | キヤノンアネルバ株式会社 | 成膜装置 |
KR101616855B1 (ko) * | 2014-11-11 | 2016-04-29 | 한국기계연구원 | 플라즈마 덕트부를 포함하는 진공 아크 증착 장치 |
KR101639630B1 (ko) * | 2014-12-11 | 2016-07-15 | 한국기계연구원 | 플라즈마 덕트부를 포함하는 진공 아크 증착 장치 |
WO2016208094A1 (fr) | 2015-06-24 | 2016-12-29 | キヤノンアネルバ株式会社 | Appareil de formation de film à arc sous vide et procédé de formation de film |
WO2017196622A2 (fr) | 2016-05-11 | 2017-11-16 | Veeco Instruments Inc. | Système de traitement de matériaux à faisceaux ioniques à système de suppression de court-circuit de réseau pour source de faisceaux ioniques en réseau |
SG10201705059TA (en) | 2016-06-24 | 2018-01-30 | Veeco Instr Inc | Enhanced cathodic arc source for arc plasma deposition |
EP3263737B1 (fr) * | 2016-06-29 | 2019-06-12 | Oerlikon Surface Solutions AG, Pfäffikon | Chambre de dépôt sous vide et procédé de filtrage de macroparticules durant évaporation par arc cathodique |
CN111542645B (zh) | 2017-12-27 | 2022-07-26 | 佳能安内华股份有限公司 | 成膜方法及成膜装置 |
BR112021012176A2 (pt) | 2018-12-20 | 2021-08-31 | Oerlikon Surface Solutions Ag, Pfäffikon | Dispositivo de ignição de arco para deposição de arco catódico de material alvo sobre um substrato, conjuntos de deposição de arco catódico de um material sobre um substrato, método de ignição de arco para deposição de arco catódico de materiais, uso de dispositivo de ignição de arco e uso de conjunto |
JP7390396B2 (ja) | 2019-03-15 | 2023-12-01 | ナノフィルム テクノロジーズ インターナショナル リミテッド | 改良されたカソードアーク源 |
WO2021255242A1 (fr) | 2020-06-19 | 2021-12-23 | Nanofilm Technologies International Limited | Source d'arc à cathode améliorée, filtres associés et procédé de filtration de macro-particules |
CN111741582A (zh) * | 2020-07-02 | 2020-10-02 | 安徽纯源镀膜科技有限公司 | 用于等离子体传送的传输通道装置及镀膜设备 |
CN113061850A (zh) * | 2021-03-19 | 2021-07-02 | 安徽纯源镀膜科技有限公司 | 一种用于pic镀膜设备的敲击杆装置 |
CN113073296B (zh) * | 2021-03-19 | 2023-01-20 | 安徽纯源镀膜科技有限公司 | 一种采用磁流体密封处理的用于真空镀膜的敲击装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3916034A (en) * | 1971-05-21 | 1975-10-28 | Hitachi Ltd | Method of transporting substances in a plasma stream to and depositing it on a target |
US4434038A (en) * | 1980-09-15 | 1984-02-28 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
DE3204135C2 (de) * | 1982-02-06 | 1987-01-08 | Honeywell Regelsysteme GmbH, 6050 Offenbach | Vorrichtung zur Simulation des freien Ausblicks mittels eines optischen Gerätes |
US4551810B1 (en) * | 1982-07-28 | 1995-09-05 | Technology Inc Const | Method and apparatus for designing duct work for producing patterns for conduit sections in the designated duct work |
US4588955A (en) * | 1983-06-01 | 1986-05-13 | The United States Of America As Represented By The United States Department Of Energy | Transverse field focused system |
US4785220A (en) * | 1985-01-30 | 1988-11-15 | Brown Ian G | Multi-cathode metal vapor arc ion source |
DE3672819D1 (de) * | 1985-09-30 | 1990-08-23 | Union Carbide Corp | Vorrichtung und verfahren zum beschichten in einer vakuumkammer durch lichtbogendampfniederschlag. |
JPS62272437A (ja) * | 1986-05-21 | 1987-11-26 | Mitsubishi Electric Corp | イオン注入装置用質量分析装置 |
DE3707545A1 (de) * | 1987-02-03 | 1988-08-11 | Balzers Hochvakuum | Anordnung zur stabilisierung eines lichtbogens zwischen einer anode und einer kathode |
US4845371A (en) * | 1988-03-29 | 1989-07-04 | Siemens Medical Laboratories, Inc. | Apparatus for generating and transporting a charged particle beam |
US5089707A (en) * | 1990-11-14 | 1992-02-18 | Ism Technologies, Inc. | Ion beam generating apparatus with electronic switching between multiple cathodes |
DE69226360T2 (de) * | 1991-03-25 | 1999-02-25 | Commonwealth Scientific And Industrial Research Organisation, Campbell | Makroteilchenfilter in lichtbogenquelle |
US5198674A (en) * | 1991-11-27 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Particle beam generator using a radioactive source |
US5279723A (en) * | 1992-07-30 | 1994-01-18 | As Represented By The United States Department Of Energy | Filtered cathodic arc source |
US5441624A (en) * | 1992-08-25 | 1995-08-15 | Northeastern University | Triggered vacuum anodic arc |
US5580429A (en) * | 1992-08-25 | 1996-12-03 | Northeastern University | Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation |
US5476691A (en) * | 1994-01-21 | 1995-12-19 | International Business Machines, Inc. | Surface treatment of magnetic recording heads |
WO1995019884A1 (fr) * | 1994-01-21 | 1995-07-27 | The Regents Of The Universtiy Of California | Traitement de surface d'articles ceramiques |
US5480527A (en) * | 1994-04-25 | 1996-01-02 | Vapor Technologies, Inc. | Rectangular vacuum-arc plasma source |
US5554853A (en) * | 1995-03-10 | 1996-09-10 | Krytek Corporation | Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques |
US5554857A (en) * | 1995-10-19 | 1996-09-10 | Eaton Corporation | Method and apparatus for ion beam formation in an ion implanter |
US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
-
1995
- 1995-02-20 GB GBGB9503305.6A patent/GB9503305D0/en active Pending
-
1996
- 1996-02-20 AT AT96903119T patent/ATE210337T1/de not_active IP Right Cessation
- 1996-02-20 WO PCT/GB1996/000389 patent/WO1996026531A2/fr active IP Right Grant
- 1996-02-20 AU AU47265/96A patent/AU4726596A/en not_active Abandoned
- 1996-02-20 DE DE69617645T patent/DE69617645D1/de not_active Expired - Lifetime
- 1996-02-20 SG SG1998003143A patent/SG68680A1/en unknown
- 1996-02-20 SG SG1998003140A patent/SG68678A1/en unknown
- 1996-02-20 US US08/894,420 patent/US6031239A/en not_active Expired - Lifetime
- 1996-02-20 SG SG1998003142A patent/SG68679A1/en unknown
- 1996-02-20 EP EP96903119A patent/EP0811236B1/fr not_active Expired - Lifetime
-
1999
- 1999-11-05 US US09/435,096 patent/US6319369B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69617645D1 (de) | 2002-01-17 |
GB9503305D0 (en) | 1995-04-12 |
US6031239A (en) | 2000-02-29 |
US6319369B1 (en) | 2001-11-20 |
SG68680A1 (en) | 2000-05-23 |
SG68678A1 (en) | 2000-05-23 |
ATE210337T1 (de) | 2001-12-15 |
EP0811236A2 (fr) | 1997-12-10 |
EP0811236B1 (fr) | 2001-12-05 |
WO1996026531A3 (fr) | 1996-12-12 |
WO1996026531A2 (fr) | 1996-08-29 |
AU4726596A (en) | 1996-09-11 |
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