ATE210337T1 - Vorrichtung und verfahren zu filtern von makropartikeln aus einem plasmastrahl - Google Patents

Vorrichtung und verfahren zu filtern von makropartikeln aus einem plasmastrahl

Info

Publication number
ATE210337T1
ATE210337T1 AT96903119T AT96903119T ATE210337T1 AT E210337 T1 ATE210337 T1 AT E210337T1 AT 96903119 T AT96903119 T AT 96903119T AT 96903119 T AT96903119 T AT 96903119T AT E210337 T1 ATE210337 T1 AT E210337T1
Authority
AT
Austria
Prior art keywords
arc
plasma jet
cathode
macroparticles
ignition
Prior art date
Application number
AT96903119T
Other languages
English (en)
Inventor
Xu Shi
David Ian Flynn
Beng Kang Tay
Hong Siang Tan
Original Assignee
Filplas Vacuum Technology Pte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Filplas Vacuum Technology Pte filed Critical Filplas Vacuum Technology Pte
Application granted granted Critical
Publication of ATE210337T1 publication Critical patent/ATE210337T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Carbon And Carbon Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Discharge Heating (AREA)
  • Plasma Technology (AREA)
AT96903119T 1995-02-20 1996-02-20 Vorrichtung und verfahren zu filtern von makropartikeln aus einem plasmastrahl ATE210337T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9503305.6A GB9503305D0 (en) 1995-02-20 1995-02-20 Filtered cathodic arc source
PCT/GB1996/000389 WO1996026531A2 (en) 1995-02-20 1996-02-20 Filtered cathodic arc source

Publications (1)

Publication Number Publication Date
ATE210337T1 true ATE210337T1 (de) 2001-12-15

Family

ID=10769900

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96903119T ATE210337T1 (de) 1995-02-20 1996-02-20 Vorrichtung und verfahren zu filtern von makropartikeln aus einem plasmastrahl

Country Status (8)

Country Link
US (2) US6031239A (de)
EP (1) EP0811236B1 (de)
AT (1) ATE210337T1 (de)
AU (1) AU4726596A (de)
DE (1) DE69617645D1 (de)
GB (1) GB9503305D0 (de)
SG (3) SG68679A1 (de)
WO (1) WO1996026531A2 (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998045871A1 (en) * 1997-04-04 1998-10-15 Alexander Igorevich Dodonov Producing electric arc plasma in a curvilinear plasmaguide and substrate coating
GB9722645D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Enhanced macroparticle filter and cathode arc source
US7014738B2 (en) 1997-10-24 2006-03-21 Filplas Vacuum Technology Pte Ltd. Enhanced macroparticle filter and cathode arc source
GB9722650D0 (en) 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
US6225627B1 (en) * 1998-03-06 2001-05-01 Seiko Instruments Inc. Focused ion beam system
CA2256847A1 (en) * 1998-12-22 2000-06-22 Munther Kandah Particle-free cathodic arc carbon ion source
GB9910842D0 (en) * 1999-05-10 1999-07-07 Univ Nanyang Composite coatings
DE19924094C2 (de) 1999-05-21 2003-04-30 Fraunhofer Ges Forschung Vakuumbogenverdampfer und Verfahren zu seinem Betrieb
RU2186151C2 (ru) * 1999-12-29 2002-07-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Устройство для нанесения покрытий в вакууме
JP3860954B2 (ja) * 2000-07-07 2006-12-20 株式会社日立グローバルストレージテクノロジーズ リアルタイムパーティクルフィルタを具備したプラズマ処理装置
JP2002105628A (ja) * 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
US7271489B2 (en) * 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
AU2002243574A1 (en) * 2001-01-17 2002-07-30 Research Foundation Of The City University Of New York Method for making a film by pulsed laser ablation
US6984675B2 (en) * 2001-11-28 2006-01-10 Resolution Specialty Materials Llc Formaldehyde-free binder compositions for simultaneous warp sizing and coloration of filament yarns
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
JP4045953B2 (ja) * 2002-12-27 2008-02-13 日新電機株式会社 真空アーク蒸着装置
US6923891B2 (en) * 2003-01-10 2005-08-02 Nanofilm Technologies International Pte Ltd. Copper interconnects
US20050095187A1 (en) * 2003-11-05 2005-05-05 Huan-Liang Tzeng Insert liner for chamber entrance
GB2410254A (en) * 2004-01-21 2005-07-27 Nanofilm Technologies Int Method of reducing stress in coatings produced by physical vapour deposition
GB0404436D0 (en) * 2004-02-27 2004-03-31 Nanofilm Technologies Int Continuous arc deposition apparatus and method with multiple available targets
JP4373252B2 (ja) * 2004-03-16 2009-11-25 浩史 滝川 プラズマ生成装置
CH697552B1 (de) * 2004-11-12 2008-11-28 Oerlikon Trading Ag Vakuumbehandlungsanlage.
US20060177610A1 (en) * 2005-02-09 2006-08-10 Arrow International Limited Sealing of Plastic Containers
WO2006118042A1 (ja) * 2005-04-26 2006-11-09 Shimadzu Corporation 表面波励起プラズマ発生装置および表面波励起プラズマ処理装置
SG130126A1 (en) * 2005-08-08 2007-03-20 Nanofilm Technologies Int Metal coatings
US7507972B2 (en) * 2005-10-10 2009-03-24 Owlstone Nanotech, Inc. Compact ionization source
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
EP2032735A4 (de) * 2006-06-21 2011-12-21 Proteus Biomedical Inc Implantierbare medizinische geräte mit durch kathodenbogen hergestellten strukturen
DE102006034988B4 (de) * 2006-07-28 2008-10-30 Deutsches Elektronen-Synchrotron Desy Ionenquelle zur Erzeugung negativ geladener Ionen
US7963076B2 (en) * 2006-09-11 2011-06-21 Dana Innovations Devices and methods for flangeless installations
CN100460556C (zh) * 2006-11-02 2009-02-11 上海交通大学 自由开放式线圈过滤器
AU2008216170B2 (en) 2007-02-14 2012-07-26 Otsuka Pharmaceutical Co., Ltd. In-body power source having high surface area electrode
US8158216B2 (en) * 2007-10-31 2012-04-17 Metascape Llc Spinulose titanium nanoparticulate surfaces
US8330127B2 (en) * 2008-03-31 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Flexible ion source
JP4633816B2 (ja) * 2008-03-31 2011-02-16 株式会社フェローテック ターゲット交換式プラズマ発生装置
US7914603B2 (en) * 2008-06-26 2011-03-29 Mks Instruments, Inc. Particle trap for a plasma source
DE102008057020A1 (de) * 2008-11-12 2010-05-20 Oerlikon Trading Ag, Trübbach Zündvorrichtung für Arc Quellen
DE102009004158B4 (de) * 2009-01-09 2023-03-30 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zur Funktionsflächenbeschichtung
US20100190036A1 (en) * 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
JP4576467B2 (ja) * 2009-03-31 2010-11-10 株式会社フェローテック 絶縁体介装型プラズマ処理装置
JP2010287268A (ja) * 2009-06-10 2010-12-24 Fuji Electric Device Technology Co Ltd フィルタードカソーディックアーク装置およびそれを用いて成膜したカーボン保護膜
JP5644085B2 (ja) 2009-06-10 2014-12-24 富士通株式会社 成膜装置及び成膜方法
US9024273B2 (en) * 2010-04-20 2015-05-05 Varian Semiconductor Equipment Associates, Inc. Method to generate molecular ions from ions with a smaller atomic mass
GB201016501D0 (en) * 2010-10-01 2010-11-17 Nanofilm Technologies Internat Pte Ltd Filter for removing macro-particles from a plasma beam
WO2014136253A1 (ja) * 2013-03-08 2014-09-12 株式会社島津製作所 アークプラズマ成膜装置
SG11201509066UA (en) * 2013-05-23 2015-12-30 Canon Anelva Corp Deposition apparatus
JP6222553B2 (ja) 2013-09-13 2017-11-01 株式会社リコー 現像装置、プロセスカートリッジ及び画像形成装置
JP6632790B2 (ja) 2014-02-10 2020-01-22 株式会社リコー 現像装置及び画像形成装置
WO2015132830A1 (ja) * 2014-03-04 2015-09-11 キヤノンアネルバ株式会社 真空処理装置及び真空処理方法
JP6126302B2 (ja) 2014-03-18 2017-05-10 キヤノンアネルバ株式会社 成膜装置
MY183150A (en) 2014-03-25 2021-02-16 Fuji Electric Malaysia Sdn Bhd Protective layer for a magnetic recording medium, and a method of manufacturing the same
EP2947516A1 (de) 2014-05-22 2015-11-25 Ricoh Company, Ltd. Entwicklungsvorrichtung und bilderzeugungsvorrichtung und prozesskartusche damit
JP6347414B2 (ja) * 2014-11-04 2018-06-27 日新イオン機器株式会社 質量分析電磁石
JP6059195B2 (ja) * 2014-11-06 2017-01-11 キヤノンアネルバ株式会社 成膜装置
KR101616855B1 (ko) * 2014-11-11 2016-04-29 한국기계연구원 플라즈마 덕트부를 포함하는 진공 아크 증착 장치
KR101639630B1 (ko) * 2014-12-11 2016-07-15 한국기계연구원 플라즈마 덕트부를 포함하는 진공 아크 증착 장치
SG11201709951VA (en) 2015-06-24 2018-01-30 Canon Anelva Corp Vacuum arc deposition apparatus and deposition method
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
EP3263737B1 (de) * 2016-06-29 2019-06-12 Oerlikon Surface Solutions AG, Pfäffikon Vakuumbeschichtungskammer und verfahren zur makropartikelfilterierung während lichtbogenkathodenverdampfung
CN111542645B (zh) 2017-12-27 2022-07-26 佳能安内华股份有限公司 成膜方法及成膜装置
EP3900013B1 (de) 2018-12-20 2023-11-15 Oerlikon Surface Solutions AG, Pfäffikon Bogenentladungszündvorrichtung
WO2020187743A1 (en) 2019-03-15 2020-09-24 Nanofilm Technologies International Pte Ltd Improved cathode arc source
CN113903650A (zh) 2020-06-19 2022-01-07 纳峰真空镀膜（上海）有限公司 改进的阴极电弧源过滤管
CN111741582A (zh) * 2020-07-02 2020-10-02 安徽纯源镀膜科技有限公司 用于等离子体传送的传输通道装置及镀膜设备
CN113073296B (zh) * 2021-03-19 2023-01-20 安徽纯源镀膜科技有限公司 一种采用磁流体密封处理的用于真空镀膜的敲击装置
CN113061850A (zh) * 2021-03-19 2021-07-02 安徽纯源镀膜科技有限公司 一种用于pic镀膜设备的敲击杆装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916034A (en) * 1971-05-21 1975-10-28 Hitachi Ltd Method of transporting substances in a plasma stream to and depositing it on a target
US4434038A (en) * 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
DE3204135A1 (de) * 1982-02-06 1983-08-18 Honeywell Gmbh, 6050 Offenbach Vorrichtung zur simulation des freien ausblicks mittels eines optischen geraetes
US4551810B1 (en) * 1982-07-28 1995-09-05 Technology Inc Const Method and apparatus for designing duct work for producing patterns for conduit sections in the designated duct work
US4588955A (en) * 1983-06-01 1986-05-13 The United States Of America As Represented By The United States Department Of Energy Transverse field focused system
US4785220A (en) * 1985-01-30 1988-11-15 Brown Ian G Multi-cathode metal vapor arc ion source
DE3672819D1 (de) * 1985-09-30 1990-08-23 Union Carbide Corp Vorrichtung und verfahren zum beschichten in einer vakuumkammer durch lichtbogendampfniederschlag.
JPS62272437A (ja) * 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置用質量分析装置
DE8703520U1 (de) * 1987-02-03 1987-10-01 Balzers Hochvakuum GmbH, 65205 Wiesbaden Von einem Begrenzungsring mit elektrisch leitender Oberfläche umgebene Kathode für eine Lichtbogenentladung
US4845371A (en) * 1988-03-29 1989-07-04 Siemens Medical Laboratories, Inc. Apparatus for generating and transporting a charged particle beam
US5089707A (en) * 1990-11-14 1992-02-18 Ism Technologies, Inc. Ion beam generating apparatus with electronic switching between multiple cathodes
US5433836A (en) * 1991-03-25 1995-07-18 Commonwealth Scientific And Industrial Research Organization Arc source macroparticle filter
US5198674A (en) * 1991-11-27 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Particle beam generator using a radioactive source
US5279723A (en) * 1992-07-30 1994-01-18 As Represented By The United States Department Of Energy Filtered cathodic arc source
US5441624A (en) * 1992-08-25 1995-08-15 Northeastern University Triggered vacuum anodic arc
US5580429A (en) * 1992-08-25 1996-12-03 Northeastern University Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
US5476691A (en) * 1994-01-21 1995-12-19 International Business Machines, Inc. Surface treatment of magnetic recording heads
AU1563995A (en) * 1994-01-21 1995-08-08 Regents Of The University Of California, The Surface treatment of ceramic articles
US5480527A (en) * 1994-04-25 1996-01-02 Vapor Technologies, Inc. Rectangular vacuum-arc plasma source
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5554857A (en) * 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon

Also Published As

Publication number Publication date
EP0811236B1 (de) 2001-12-05
SG68678A1 (en) 2000-05-23
AU4726596A (en) 1996-09-11
WO1996026531A2 (en) 1996-08-29
US6319369B1 (en) 2001-11-20
DE69617645D1 (de) 2002-01-17
GB9503305D0 (en) 1995-04-12
SG68680A1 (en) 2000-05-23
SG68679A1 (en) 2000-05-23
WO1996026531A3 (en) 1996-12-12
US6031239A (en) 2000-02-29
EP0811236A2 (de) 1997-12-10

Similar Documents

Publication Publication Date Title
ATE210337T1 (de) Vorrichtung und verfahren zu filtern von makropartikeln aus einem plasmastrahl
WO2002078041A3 (en) Neutral particle beam processing apparatus
AU2933189A (en) Procedure and apparatus for the coating of materials by means of a pulsating plasma beam
ATE207978T1 (de) Verfahren und vorrichtung zum zünden von plasmen in einem process modul
KR960705373A (ko) 에어로졸 방법에 의한 작은 입자전극(small particle electrodes by aerosol process)
WO2003030240A3 (en) Etching method and apparatus
ATE101661T1 (de) Verfahren und vorrichtung zur beschichtung von substraten.
US20050167262A1 (en) Passive bipolar arc control system and method
CA2005532A1 (en) Axial flow laser plasma spraying
JP2009004778A5 (de)
MX160598A (es) Metodo para producir por soldadura de arco de plasma un revestimiento sobre un substrato de hierro forjado
DE3587964D1 (de) Verfahren und Vorrichtung zur chemischen Abscheidung aus der Dampfphase mittels eines durch Magnetron verstärkten Plasmas.
DE69411031D1 (de) Vorbehandlungssystem zum flussmittelfreien löten und verfahren unter verwendung eines fluorhaltigen plasmas
ATE66013T1 (de) Verfahren und vorrichtung zum vernichten von chemisch stabilen abfaellen.
DE69620656D1 (de) Flüssigkeitsausstosskopf, Vorrichtung zum Ausstossen von Flüssigkeit und Verfahren zum Ausstossen von Flüssigkeit
ATE164635T1 (de) Vorrichtung und verfahren zur partiellen beschichtung von bauteilgruppen
ES2138257T3 (es) Procedimiento para encender un arco voltaico de soldadura.
ES2151633T3 (es) Procedimiento y dispositivo para el decapado de un substrato metalico.
EP1971448B1 (de) Verfahren und vorrichtung zur behandlung einer oberfläche um diese von verunreinigungen zu befreien
DE69737311D1 (de) Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch-neutralen Linie
WO1999050878A3 (de) Verfahren zur erzeugung eines gepulsten elektronenstrahls und triggerplasmaquelle zur durchführung des verfahrens
JPS56110940A (en) Method for developing and rinsing photoresist
JPS5645778A (en) Electrostatic painting method and apparatus therefor
JPH07265654A (ja) プラズマ法排ガス浄化装置におけるプラズマ発生方法
DE60100019D1 (de) Vorrichtung und Verfahren zur Beschichtung von Prothesenteilen

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties