DE69737311D1 - Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch-neutralen Linie - Google Patents

Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch-neutralen Linie

Info

Publication number
DE69737311D1
DE69737311D1 DE69737311T DE69737311T DE69737311D1 DE 69737311 D1 DE69737311 D1 DE 69737311D1 DE 69737311 T DE69737311 T DE 69737311T DE 69737311 T DE69737311 T DE 69737311T DE 69737311 D1 DE69737311 D1 DE 69737311D1
Authority
DE
Germany
Prior art keywords
plasma
magnetic
generating
neutral line
discharge along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69737311T
Other languages
English (en)
Other versions
DE69737311T2 (de
Inventor
Taijiro Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8023835A external-priority patent/JPH09219296A/ja
Priority claimed from JP8033441A external-priority patent/JPH09232097A/ja
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE69737311D1 publication Critical patent/DE69737311D1/de
Application granted granted Critical
Publication of DE69737311T2 publication Critical patent/DE69737311T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE69737311T 1996-02-09 1997-02-06 Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch-neutralen Linie Expired - Lifetime DE69737311T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8023835A JPH09219296A (ja) 1996-02-09 1996-02-09 磁気中性線放電型プラズマ源
JP2383596 1996-02-09
JP8033441A JPH09232097A (ja) 1996-02-21 1996-02-21 磁気中性線放電型プラズマ利用装置
JP3344196 1996-02-21

Publications (2)

Publication Number Publication Date
DE69737311D1 true DE69737311D1 (de) 2007-03-22
DE69737311T2 DE69737311T2 (de) 2007-06-28

Family

ID=26361255

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69732055T Expired - Lifetime DE69732055T2 (de) 1996-02-09 1997-02-06 Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch neutralen Linie
DE69737311T Expired - Lifetime DE69737311T2 (de) 1996-02-09 1997-02-06 Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch-neutralen Linie

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69732055T Expired - Lifetime DE69732055T2 (de) 1996-02-09 1997-02-06 Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch neutralen Linie

Country Status (3)

Country Link
US (1) US5804027A (de)
EP (2) EP1006557B1 (de)
DE (2) DE69732055T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
KR100797385B1 (ko) * 2000-10-19 2008-01-24 로베르트 보쉬 게엠베하 유도 결합 플라즈마를 이용한 기판의 에칭 장치 및 방법
US20030082920A1 (en) * 2001-11-01 2003-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber-reversed dry etching
DE10215660B4 (de) * 2002-04-09 2008-01-17 Eads Space Transportation Gmbh Hochfrequenz-Elektronenquelle, insbesondere Neutralisator
CN101785088B (zh) * 2007-08-08 2013-06-05 株式会社爱发科 等离子处理方法和等离子处理装置
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JP3438785B2 (ja) * 1991-12-03 2003-08-18 東京応化工業株式会社 プラズマ処理装置及び方法
US6475333B1 (en) * 1993-07-26 2002-11-05 Nihon Shinku Gijutsu Kabushiki Kaisha Discharge plasma processing device
JPH07263189A (ja) * 1994-03-24 1995-10-13 Ulvac Japan Ltd 放電プラズマ処理装置
JPH07263192A (ja) * 1994-03-24 1995-10-13 Ulvac Japan Ltd エッチング装置

Also Published As

Publication number Publication date
EP1006557A3 (de) 2003-07-30
DE69732055T2 (de) 2005-06-02
EP0789506B1 (de) 2004-12-29
EP1006557A2 (de) 2000-06-07
DE69737311T2 (de) 2007-06-28
US5804027A (en) 1998-09-08
DE69732055D1 (de) 2005-02-03
EP0789506A1 (de) 1997-08-13
EP1006557B1 (de) 2007-01-31

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