DE69719925D1 - Vorrichtung und Verfahren zur Plasmabrennerserzeugung - Google Patents

Vorrichtung und Verfahren zur Plasmabrennerserzeugung

Info

Publication number
DE69719925D1
DE69719925D1 DE69719925T DE69719925T DE69719925D1 DE 69719925 D1 DE69719925 D1 DE 69719925D1 DE 69719925 T DE69719925 T DE 69719925T DE 69719925 T DE69719925 T DE 69719925T DE 69719925 D1 DE69719925 D1 DE 69719925D1
Authority
DE
Germany
Prior art keywords
generating plasma
plasma torches
torches
generating
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69719925T
Other languages
English (en)
Other versions
DE69719925T2 (de
Inventor
Yan Ye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69719925D1 publication Critical patent/DE69719925D1/de
Application granted granted Critical
Publication of DE69719925T2 publication Critical patent/DE69719925T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE69719925T 1996-12-05 1997-12-04 Vorrichtung und Verfahren zur Plasmabrennerserzeugung Expired - Fee Related DE69719925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/761,024 US6312554B1 (en) 1996-12-05 1996-12-05 Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber

Publications (2)

Publication Number Publication Date
DE69719925D1 true DE69719925D1 (de) 2003-04-24
DE69719925T2 DE69719925T2 (de) 2003-12-11

Family

ID=25060882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69719925T Expired - Fee Related DE69719925T2 (de) 1996-12-05 1997-12-04 Vorrichtung und Verfahren zur Plasmabrennerserzeugung

Country Status (6)

Country Link
US (1) US6312554B1 (de)
EP (1) EP0847231B1 (de)
JP (1) JPH10228997A (de)
KR (1) KR19980063764A (de)
DE (1) DE69719925T2 (de)
TW (1) TW386237B (de)

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US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
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US20110104381A1 (en) * 2004-01-15 2011-05-05 Stefan Laure Plasma Treatment of Large-Scale Components
DE112005000740A5 (de) * 2004-04-09 2007-07-05 Plasmatreat Gmbh Verfahren und Vorrichtung zum Erzeugen eines Niederdruckplasmas und Anwendungen des Niederdruckplasmas
WO2006014034A1 (en) * 2004-08-04 2006-02-09 Industry-University Cooperation Foundation Hanyang University Remote plasma atomic layer deposition apparatus and method using dc bias
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
CN101495262B (zh) * 2005-03-11 2014-11-12 魄金莱默有限公司 等离子体及其使用方法
JP5305900B2 (ja) * 2005-04-11 2013-10-02 ドクトル・ラウレ・プラスマテヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング プラズマコーティングを施す装置および方法
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US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
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US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
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JP5510437B2 (ja) * 2011-12-07 2014-06-04 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
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Also Published As

Publication number Publication date
KR19980063764A (ko) 1998-10-07
TW386237B (en) 2000-04-01
US6312554B1 (en) 2001-11-06
JPH10228997A (ja) 1998-08-25
EP0847231A1 (de) 1998-06-10
DE69719925T2 (de) 2003-12-11
EP0847231B1 (de) 2003-03-19

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