CN1086307C
(zh)
*
|
1997-11-28 |
2002-06-19 |
复旦大学 |
低温等离子体工业废气处理装置
|
US6441553B1
(en)
*
|
1999-02-01 |
2002-08-27 |
Sigma Technologies International, Inc. |
Electrode for glow-discharge atmospheric-pressure plasma treatment
|
US7557019B2
(en)
*
|
1999-02-01 |
2009-07-07 |
Sigma Laboratories Of Arizona, Llc |
Electromagnetic treatment in atmospheric-plasma coating process
|
US6118218A
(en)
*
|
1999-02-01 |
2000-09-12 |
Sigma Technologies International, Inc. |
Steady-state glow-discharge plasma at atmospheric pressure
|
US7067405B2
(en)
*
|
1999-02-01 |
2006-06-27 |
Sigma Laboratories Of Arizona, Inc. |
Atmospheric glow discharge with concurrent coating deposition
|
US7300859B2
(en)
*
|
1999-02-01 |
2007-11-27 |
Sigma Laboratories Of Arizona, Llc |
Atmospheric glow discharge with concurrent coating deposition
|
DE19912981C1
(de)
*
|
1999-03-22 |
2000-12-21 |
Univ Magdeburg Tech |
Verfahren und Anordnung zur Speisung einer dielektrisch behinderten Entladung unter Verwendung eines Transformators zur Pegelanpassung der Speisespannung
|
JP2000348896A
(ja)
*
|
1999-03-26 |
2000-12-15 |
Canon Inc |
プラズマ発生方法、プラズマ発生装置及びプラズマ反応によるガス処理方法
|
JP3510993B2
(ja)
*
|
1999-12-10 |
2004-03-29 |
トーカロ株式会社 |
プラズマ処理容器内部材およびその製造方法
|
TW514996B
(en)
|
1999-12-10 |
2002-12-21 |
Tokyo Electron Ltd |
Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
|
US6451390B1
(en)
*
|
2000-04-06 |
2002-09-17 |
Applied Materials, Inc. |
Deposition of TEOS oxide using pulsed RF plasma
|
DE10122598B4
(de)
*
|
2000-05-16 |
2012-12-27 |
Rübig Ges.m.b.H. & Co. KG |
Verfahren für die Ionisierung eines Arbeitsgases zur Oberflächenbehandlung eines Werkstückes
|
EP1162646A3
(de)
*
|
2000-06-06 |
2004-10-13 |
Matsushita Electric Works, Ltd. |
Plasmabehandlungsgerät und -verfahren
|
US6459066B1
(en)
|
2000-08-25 |
2002-10-01 |
Board Of Regents, The University Of Texas System |
Transmission line based inductively coupled plasma source with stable impedance
|
US6875700B2
(en)
*
|
2000-08-29 |
2005-04-05 |
Board Of Regents, The University Of Texas System |
Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
|
KR100823858B1
(ko)
|
2000-10-04 |
2008-04-21 |
다우 코닝 아일랜드 리미티드 |
피복물 형성 방법 및 피복물 형성 장치
|
US6596388B1
(en)
*
|
2000-11-29 |
2003-07-22 |
Psiloquest |
Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor
|
US6579604B2
(en)
*
|
2000-11-29 |
2003-06-17 |
Psiloquest Inc. |
Method of altering and preserving the surface properties of a polishing pad and specific applications therefor
|
US6713382B1
(en)
*
|
2001-01-31 |
2004-03-30 |
Advanced Micro Devices, Inc. |
Vapor treatment for repairing damage of low-k dielectric
|
US7396582B2
(en)
*
|
2001-04-06 |
2008-07-08 |
Advanced Cardiovascular Systems, Inc. |
Medical device chemically modified by plasma polymerization
|
RU2196394C1
(ru)
*
|
2001-05-18 |
2003-01-10 |
Александров Андрей Федорович |
Способ плазменной обработки материалов, способ генерации плазмы и устройство для плазменной обработки материалов
|
JP2003007682A
(ja)
*
|
2001-06-25 |
2003-01-10 |
Matsushita Electric Ind Co Ltd |
プラズマ処理装置用の電極部材
|
DE10130936B4
(de)
*
|
2001-06-27 |
2004-04-29 |
Infineon Technologies Ag |
Herstellungsverfahren für ein Halbleiterbauelement mittels Atomschichtabscheidung/ALD
|
WO2003037047A1
(fr)
*
|
2001-10-22 |
2003-05-01 |
Shibaura Mechatronics Corporation |
Procede permettant d'evaluer un arc de dispositif de decharge luminescente et suppresseur de decharge d'arc haute frequence
|
FR2836157B1
(fr)
*
|
2002-02-19 |
2004-04-09 |
Usinor |
Procede de nettoyage de la surface d'un materiau enduit d'une susbstance organique, generateur et dispositif de mise en oeuvre
|
FR2836158B1
(fr)
*
|
2002-02-19 |
2005-01-07 |
Usinor |
Procede de nettoyage par plasma de la surface d'un materiau enduit d'une substance organique, et installation de mise en oeuvre
|
TWI315966B
(en)
*
|
2002-02-20 |
2009-10-11 |
Panasonic Elec Works Co Ltd |
Plasma processing device and plasma processing method
|
TW200409669A
(en)
|
2002-04-10 |
2004-06-16 |
Dow Corning Ireland Ltd |
Protective coating composition
|
US20070066076A1
(en)
*
|
2005-09-19 |
2007-03-22 |
Bailey Joel B |
Substrate processing method and apparatus using a combustion flame
|
US7887711B2
(en)
*
|
2002-06-13 |
2011-02-15 |
International Business Machines Corporation |
Method for etching chemically inert metal oxides
|
US6774569B2
(en)
*
|
2002-07-11 |
2004-08-10 |
Fuji Photo Film B.V. |
Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
|
US7494326B2
(en)
*
|
2003-12-31 |
2009-02-24 |
Honeywell International Inc. |
Micro ion pump
|
US20040245993A1
(en)
*
|
2002-09-27 |
2004-12-09 |
Ulrich Bonne |
Gas ionization sensor
|
US6837966B2
(en)
|
2002-09-30 |
2005-01-04 |
Tokyo Electron Limeted |
Method and apparatus for an improved baffle plate in a plasma processing system
|
US6798519B2
(en)
|
2002-09-30 |
2004-09-28 |
Tokyo Electron Limited |
Method and apparatus for an improved optical window deposition shield in a plasma processing system
|
US7137353B2
(en)
|
2002-09-30 |
2006-11-21 |
Tokyo Electron Limited |
Method and apparatus for an improved deposition shield in a plasma processing system
|
US7166166B2
(en)
|
2002-09-30 |
2007-01-23 |
Tokyo Electron Limited |
Method and apparatus for an improved baffle plate in a plasma processing system
|
US7204912B2
(en)
|
2002-09-30 |
2007-04-17 |
Tokyo Electron Limited |
Method and apparatus for an improved bellows shield in a plasma processing system
|
US7166200B2
(en)
|
2002-09-30 |
2007-01-23 |
Tokyo Electron Limited |
Method and apparatus for an improved upper electrode plate in a plasma processing system
|
US7147749B2
(en)
|
2002-09-30 |
2006-12-12 |
Tokyo Electron Limited |
Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
|
EP1403902A1
(de)
*
|
2002-09-30 |
2004-03-31 |
Fuji Photo Film B.V. |
Verfahren und Vorrichtung zur Erzeugung eines Glühentladungsplasmas unter atmosphärischem Druck
|
CN1249789C
(zh)
|
2002-11-28 |
2006-04-05 |
东京毅力科创株式会社 |
等离子体处理容器内部件
|
US7059269B2
(en)
*
|
2003-02-13 |
2006-06-13 |
Steris, Inc. |
Pulsed electric field system for decontamination of biological agents on a dielectric sheet material
|
US7303789B2
(en)
*
|
2003-02-17 |
2007-12-04 |
Ngk Insulators, Ltd. |
Methods for producing thin films on substrates by plasma CVD
|
DE602004009982T2
(de)
*
|
2003-03-31 |
2008-09-18 |
Sanyo Electric Co., Ltd., Moriguchi |
Metallschablone und Verfahren zum Drucken von bleifreier Lötpaste mit derselben
|
WO2004095530A2
(en)
|
2003-03-31 |
2004-11-04 |
Tokyo Electron Limited |
Adjoining adjacent coatings on an element
|
US7291566B2
(en)
|
2003-03-31 |
2007-11-06 |
Tokyo Electron Limited |
Barrier layer for a processing element and a method of forming the same
|
US7727581B2
(en)
*
|
2004-03-17 |
2010-06-01 |
Essilor International Compagnie Generale D' Optique |
Process for applying a coating on an optical lens face and implementation system
|
DE602004003697T2
(de)
*
|
2004-08-13 |
2007-10-04 |
Fuji Film Manufacturing Europe B.V. |
Verfahren und Vorrichtung zur Steuerung eines Glühentladungsplasmas unter atmosphärischem Druck
|
US7855513B2
(en)
*
|
2004-09-28 |
2010-12-21 |
Old Dominion University Research Foundation |
Device and method for gas treatment using pulsed corona discharges
|
US7552521B2
(en)
|
2004-12-08 |
2009-06-30 |
Tokyo Electron Limited |
Method and apparatus for improved baffle plate
|
US7601242B2
(en)
|
2005-01-11 |
2009-10-13 |
Tokyo Electron Limited |
Plasma processing system and baffle assembly for use in plasma processing system
|
GB0509648D0
(en)
|
2005-05-12 |
2005-06-15 |
Dow Corning Ireland Ltd |
Plasma system to deposit adhesion primer layers
|
US20070037408A1
(en)
*
|
2005-08-10 |
2007-02-15 |
Hitachi Metals, Ltd. |
Method and apparatus for plasma processing
|
JP5118823B2
(ja)
*
|
2005-09-14 |
2013-01-16 |
東北リコー株式会社 |
インク定着方法、インク定着装置及び印刷装置
|
JP4578412B2
(ja)
*
|
2006-01-20 |
2010-11-10 |
日本碍子株式会社 |
放電プラズマ発生方法
|
WO2007128947A1
(en)
*
|
2006-05-02 |
2007-11-15 |
Dow Corning Ireland Limited |
Fluid replacement system
|
KR101244674B1
(ko)
*
|
2006-05-02 |
2013-03-25 |
다우 코닝 아일랜드 리미티드 |
웹 밀봉 장치
|
US7514125B2
(en)
*
|
2006-06-23 |
2009-04-07 |
Applied Materials, Inc. |
Methods to improve the in-film defectivity of PECVD amorphous carbon films
|
TWI341872B
(en)
*
|
2006-08-07 |
2011-05-11 |
Ind Tech Res Inst |
Plasma deposition apparatus and depositing method thereof
|
EP1944406A1
(de)
|
2007-01-10 |
2008-07-16 |
Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO |
Verfahren und Vorrichtung zur Plasmabehandlung eines langgestreckten Gegenstandes
|
DE112008000541A5
(de)
*
|
2007-03-09 |
2009-12-10 |
Dr. Laure Plasmatechnologie Gmbh |
Verfahren und Vorrichtung zur plasmagestützten Oberflächenbehandlung großvolumiger Bauteile
|
US8968286B2
(en)
*
|
2008-08-19 |
2015-03-03 |
Drexel University |
Nano discharges in liquids
|
CN102171795A
(zh)
*
|
2008-10-03 |
2011-08-31 |
维易科加工设备股份有限公司 |
气相外延系统
|
US8664561B2
(en)
*
|
2009-07-01 |
2014-03-04 |
Varian Semiconductor Equipment Associates, Inc. |
System and method for selectively controlling ion composition of ion sources
|
DE102009038563B4
(de)
*
|
2009-08-22 |
2013-06-06 |
Reinhausen Plasma Gmbh |
Vorrichtung und Verfahren zur Überwachung eines Plasmastrahls
|
WO2011090717A1
(en)
*
|
2009-12-28 |
2011-07-28 |
Gvd Corporation |
Coating methods, systems, and related articles
|
WO2011093404A1
(ja)
*
|
2010-01-29 |
2011-08-04 |
旭硝子株式会社 |
フッ素樹脂成形体の表面処理方法およびフッ素樹脂成形体
|
US20120000606A1
(en)
*
|
2010-07-02 |
2012-01-05 |
Varian Semiconductor Equipment Associates, Inc. |
Plasma uniformity system and method
|
KR101879175B1
(ko)
*
|
2011-10-20 |
2018-08-20 |
삼성전자주식회사 |
화학 기상 증착 장치
|
WO2013105659A1
(ja)
*
|
2012-01-13 |
2013-07-18 |
国立大学法人大阪大学 |
活性種照射装置、活性種照射方法及び活性種被照射物作製方法
|
US9293303B2
(en)
*
|
2013-08-30 |
2016-03-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Low contamination chamber for surface activation
|
US10020800B2
(en)
|
2013-11-14 |
2018-07-10 |
Eagle Harbor Technologies, Inc. |
High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
|
US10892140B2
(en)
|
2018-07-27 |
2021-01-12 |
Eagle Harbor Technologies, Inc. |
Nanosecond pulser bias compensation
|
US10978955B2
(en)
|
2014-02-28 |
2021-04-13 |
Eagle Harbor Technologies, Inc. |
Nanosecond pulser bias compensation
|
US11539352B2
(en)
|
2013-11-14 |
2022-12-27 |
Eagle Harbor Technologies, Inc. |
Transformer resonant converter
|
CN109873621B
(zh)
|
2013-11-14 |
2023-06-16 |
鹰港科技有限公司 |
高压纳秒脉冲发生器
|
US10483089B2
(en)
*
|
2014-02-28 |
2019-11-19 |
Eagle Harbor Technologies, Inc. |
High voltage resistive output stage circuit
|
US11004660B2
(en)
*
|
2018-11-30 |
2021-05-11 |
Eagle Harbor Technologies, Inc. |
Variable output impedance RF generator
|
US10903047B2
(en)
|
2018-07-27 |
2021-01-26 |
Eagle Harbor Technologies, Inc. |
Precise plasma control system
|
US11430635B2
(en)
|
2018-07-27 |
2022-08-30 |
Eagle Harbor Technologies, Inc. |
Precise plasma control system
|
US20180178495A1
(en)
*
|
2016-12-28 |
2018-06-28 |
Xiaoxi Kevin Chen |
Hydrophilic Coating Methods for Chemically Inert Substrates
|
WO2018148182A1
(en)
|
2017-02-07 |
2018-08-16 |
Eagle Harbor Technologies, Inc. |
Transformer resonant converter
|
CN108471666B
(zh)
*
|
2017-02-23 |
2021-06-08 |
北京北方华创微电子装备有限公司 |
一种等离子体产生方法及装置和半导体处理设备
|
JP6902167B2
(ja)
|
2017-08-25 |
2021-07-14 |
イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. |
ナノ秒パルスを使用する任意波形の発生
|
US11014853B2
(en)
|
2018-03-07 |
2021-05-25 |
Applied Materials, Inc. |
Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
|
CN110504149B
(zh)
*
|
2018-05-17 |
2022-04-22 |
北京北方华创微电子装备有限公司 |
射频电源的脉冲调制系统及方法
|
KR102416434B1
(ko)
*
|
2018-06-28 |
2022-07-01 |
어플라이드 머티어리얼스, 인코포레이티드 |
중합체 막에 대한 표면 처리 방법
|
US11302518B2
(en)
|
2018-07-27 |
2022-04-12 |
Eagle Harbor Technologies, Inc. |
Efficient energy recovery in a nanosecond pulser circuit
|
US11222767B2
(en)
|
2018-07-27 |
2022-01-11 |
Eagle Harbor Technologies, Inc. |
Nanosecond pulser bias compensation
|
US10607814B2
(en)
|
2018-08-10 |
2020-03-31 |
Eagle Harbor Technologies, Inc. |
High voltage switch with isolated power
|
US11532457B2
(en)
|
2018-07-27 |
2022-12-20 |
Eagle Harbor Technologies, Inc. |
Precise plasma control system
|
US11610765B1
(en)
*
|
2018-08-09 |
2023-03-21 |
Apjet, Inc. |
Atmospheric-pressure plasma processing apparatus and method using argon plasma gas
|
CN112805920A
(zh)
|
2018-08-10 |
2021-05-14 |
鹰港科技有限公司 |
用于rf等离子体反应器的等离子体鞘控制
|
CN113906677A
(zh)
|
2019-01-08 |
2022-01-07 |
鹰港科技有限公司 |
纳秒脉冲发生器电路中的高效能量恢复
|
CN109701510A
(zh)
*
|
2019-01-28 |
2019-05-03 |
广东朗研科技有限公司 |
一种Magneli相氧化钛介孔表面的制备方法
|
TWI778449B
(zh)
|
2019-11-15 |
2022-09-21 |
美商鷹港科技股份有限公司 |
高電壓脈衝電路
|
US11651942B2
(en)
*
|
2019-12-18 |
2023-05-16 |
Ontos Equipment Systems, Inc. |
System and method for plasma head helium measurement
|
KR20230150396A
(ko)
|
2019-12-24 |
2023-10-30 |
이글 하버 테크놀로지스, 인코포레이티드 |
플라즈마 시스템을 위한 나노초 펄서 rf 절연
|
JP2023035390A
(ja)
*
|
2021-09-01 |
2023-03-13 |
東京エレクトロン株式会社 |
プラズマ測定方法
|