DE69837043D1 - Verfahren zur regelung einer plasmabehandlungsvorrichtung - Google Patents

Verfahren zur regelung einer plasmabehandlungsvorrichtung

Info

Publication number
DE69837043D1
DE69837043D1 DE69837043T DE69837043T DE69837043D1 DE 69837043 D1 DE69837043 D1 DE 69837043D1 DE 69837043 T DE69837043 T DE 69837043T DE 69837043 T DE69837043 T DE 69837043T DE 69837043 D1 DE69837043 D1 DE 69837043D1
Authority
DE
Germany
Prior art keywords
regulating
treatment device
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69837043T
Other languages
English (en)
Other versions
DE69837043T2 (de
Inventor
Kazuya Nagaseki
Hiroki Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE69837043D1 publication Critical patent/DE69837043D1/de
Application granted granted Critical
Publication of DE69837043T2 publication Critical patent/DE69837043T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE69837043T 1997-08-22 1998-08-11 Verfahren zur regelung einer plasmabehandlungsvorrichtung Expired - Lifetime DE69837043T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24182197 1997-08-22
JP24182197 1997-08-22
PCT/JP1998/003571 WO1999011103A1 (en) 1997-08-22 1998-08-11 Method for controlling plasma processor

Publications (2)

Publication Number Publication Date
DE69837043D1 true DE69837043D1 (de) 2007-03-22
DE69837043T2 DE69837043T2 (de) 2007-10-18

Family

ID=17080006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837043T Expired - Lifetime DE69837043T2 (de) 1997-08-22 1998-08-11 Verfahren zur regelung einer plasmabehandlungsvorrichtung

Country Status (7)

Country Link
US (1) US6365060B1 (de)
EP (1) EP1009199B1 (de)
JP (1) JP4256064B2 (de)
KR (1) KR100549901B1 (de)
DE (1) DE69837043T2 (de)
TW (1) TW396385B (de)
WO (1) WO1999011103A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6762129B2 (en) * 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP3883396B2 (ja) * 2001-05-21 2007-02-21 東京応化工業株式会社 誘導結合プラズマ着火方法
JP3923323B2 (ja) * 2002-01-30 2007-05-30 アルプス電気株式会社 プラズマ処理装置及びプラズマ処理方法
JP4493896B2 (ja) * 2002-03-12 2010-06-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理停止方法
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP5411105B2 (ja) * 2004-06-23 2014-02-12 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP4537188B2 (ja) * 2004-12-09 2010-09-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5141519B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP5670177B2 (ja) * 2010-12-27 2015-02-18 株式会社アルバック プラズマエッチング方法
JP5485950B2 (ja) * 2011-07-25 2014-05-07 東京エレクトロン株式会社 プラズマ処理装置の制御方法
JP6144917B2 (ja) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP6976228B2 (ja) * 2018-07-23 2021-12-08 株式会社日立ハイテク プラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812347B2 (ja) 1981-02-09 1983-03-08 日本電信電話株式会社 プラズマエッチング装置
JPS63257200A (ja) 1987-04-13 1988-10-25 ア−ル・エフ・エナジイ株式会社 高周波気体放電回路
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
JPH0812857B2 (ja) 1987-10-20 1996-02-07 富士通株式会社 半導体製造装置及び半導体装置の製造方法
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US6190512B1 (en) * 1993-09-07 2001-02-20 Tokyo Electron Arizona Inc. Soft plasma ignition in plasma processing chambers
JP3204836B2 (ja) * 1994-03-25 2001-09-04 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
EP0685873B1 (de) * 1994-06-02 1998-12-16 Applied Materials, Inc. Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
US5441596A (en) * 1994-07-27 1995-08-15 Cypress Semiconductor Corporation Method for forming a stable plasma
US5716534A (en) 1994-12-05 1998-02-10 Tokyo Electron Limited Plasma processing method and plasma etching method
JP2783276B2 (ja) * 1995-07-04 1998-08-06 日本電気株式会社 半導体装置の製造方法
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
JPH09186141A (ja) 1995-10-30 1997-07-15 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
EP1009199B1 (de) 2007-02-07
EP1009199A1 (de) 2000-06-14
WO1999011103A1 (en) 1999-03-04
JP4256064B2 (ja) 2009-04-22
US6365060B1 (en) 2002-04-02
EP1009199A4 (de) 2004-06-30
DE69837043T2 (de) 2007-10-18
KR100549901B1 (ko) 2006-02-06
TW396385B (en) 2000-07-01
KR20010023113A (ko) 2001-03-26

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