DE69800975D1 - Verfahren und Vorrichtung zu Oberflächenbehandlung - Google Patents

Verfahren und Vorrichtung zu Oberflächenbehandlung

Info

Publication number
DE69800975D1
DE69800975D1 DE69800975T DE69800975T DE69800975D1 DE 69800975 D1 DE69800975 D1 DE 69800975D1 DE 69800975 T DE69800975 T DE 69800975T DE 69800975 T DE69800975 T DE 69800975T DE 69800975 D1 DE69800975 D1 DE 69800975D1
Authority
DE
Germany
Prior art keywords
surface treatment
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69800975T
Other languages
English (en)
Other versions
DE69800975T2 (de
Inventor
Koji Miyake
Takahiro Nakahigashi
Hajime Kuwahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of DE69800975D1 publication Critical patent/DE69800975D1/de
Application granted granted Critical
Publication of DE69800975T2 publication Critical patent/DE69800975T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
DE69800975T 1997-01-16 1998-01-10 Verfahren und Vorrichtung zu Oberflächenbehandlung Expired - Fee Related DE69800975T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00546897A JP4013271B2 (ja) 1997-01-16 1997-01-16 物品表面処理方法及び装置

Publications (2)

Publication Number Publication Date
DE69800975D1 true DE69800975D1 (de) 2001-08-02
DE69800975T2 DE69800975T2 (de) 2002-04-04

Family

ID=11612082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800975T Expired - Fee Related DE69800975T2 (de) 1997-01-16 1998-01-10 Verfahren und Vorrichtung zu Oberflächenbehandlung

Country Status (4)

Country Link
US (1) US6165376A (de)
EP (1) EP0854205B9 (de)
JP (1) JP4013271B2 (de)
DE (1) DE69800975T2 (de)

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US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US6544895B1 (en) 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
US6531367B2 (en) * 2001-03-20 2003-03-11 Macronix International Co., Ltd. Method for forming ultra-shallow junction by boron plasma doping
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
KR101214861B1 (ko) * 2005-07-21 2012-12-24 주성엔지니어링(주) 진폭변조를 이용하여 플라즈마를 생성하는 방법 및 이를위한 플라즈마 발생장치
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US8083961B2 (en) * 2006-07-31 2011-12-27 Tokyo Electron Limited Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP4607930B2 (ja) 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5390846B2 (ja) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5542509B2 (ja) * 2010-04-05 2014-07-09 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US9520531B2 (en) * 2010-07-27 2016-12-13 Amtech Systems, Inc. Systems and methods for depositing and charging solar cell layers
US20140057388A1 (en) * 2010-07-27 2014-02-27 Amtech Systems, Inc. Systems and Methods for Depositing and Charging Solar Cell Layers
US8338211B2 (en) * 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
JP7262375B2 (ja) * 2019-11-26 2023-04-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

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US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
GB2240114B (en) * 1990-01-18 1993-03-24 Stc Plc Film nucleation process
JP2643535B2 (ja) * 1990-05-22 1997-08-20 ブラザー工業株式会社 鳩目穴かがりミシン
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
EP0653501B1 (de) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD-Verfahren und Vorrichtung
JPH08255782A (ja) * 1995-03-16 1996-10-01 Toshiba Corp プラズマ表面処理装置
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
DE69736790T2 (de) * 1996-06-27 2007-08-16 Nissin Electric Co., Ltd. Mit einem Kohlenstofffilm beschichteter Gegenstand und Verfahren zu dessen Herstellung
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
EP0854205B1 (de) 2001-06-27
EP0854205A1 (de) 1998-07-22
DE69800975T2 (de) 2002-04-04
JP4013271B2 (ja) 2007-11-28
US6165376A (en) 2000-12-26
JPH10204636A (ja) 1998-08-04
EP0854205B9 (de) 2002-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee