JP4373252B2 - プラズマ生成装置 - Google Patents
プラズマ生成装置 Download PDFInfo
- Publication number
- JP4373252B2 JP4373252B2 JP2004075091A JP2004075091A JP4373252B2 JP 4373252 B2 JP4373252 B2 JP 4373252B2 JP 2004075091 A JP2004075091 A JP 2004075091A JP 2004075091 A JP2004075091 A JP 2004075091A JP 4373252 B2 JP4373252 B2 JP 4373252B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- cathode
- anode
- trigger
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010406 cathode material Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 30
- 238000011068 loading method Methods 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 23
- 238000010891 electric arc Methods 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 abstract description 12
- 239000000470 constituent Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000001788 irregular Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 26
- 239000010408 film Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 14
- 230000007935 neutral effect Effects 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 10
- 238000011109 contamination Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000005498 polishing Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000010892 electric spark Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910019912 CrN Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010041 TiAlC Inorganic materials 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- -1 TiN Chemical class 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Description
本発明に係るプラズマ生成装置では、陰極面上に形成された凸部先端と陽極面が接触するプラズマ放出点からプラズマが発生し、この凸部先端が蒸発した場合、次のプラズマ起動時には、前記陽極面と接触可能な他の凸部先端が新たなプラズマ放出点となる。幾つかの凸部先端が順次蒸発しても、凸部先端が次々と形成されるから、陰極面の微小な凹凸形状は保持され、前記陰極面から継続してプラズマを発生させることができ、真空チャンバーを開放することなく、安定且つ断続的にプラズマを生成することができる。しかも、長時間で見れば陰極面が平均的に消費されるため、陰極面は次第に後退してゆき、陰極物質が消失するまで真空アーク放電が継続し、陰極の完全消失までプラズマの連続生成が可能になる。
2 プラズマ発生部
3 陰極材料装填装置
4 陰極
4a 陰極面
4b、4f 凸部先端
4c 陰極予備材料
4d、4e 凸部
5 プラズマ輸送ダクト
6 トリガー兼陽極
6a 先端部
6b 基端部
6c 陽極面
6d 磁石
6e プラズマ衝突回避位置
6f プラズマ生成物質
8 プラズマ
9 第1プラズマガイド部
10 第2プラズマガイド部
12 プラズマ加工部
14 被処理物
16 ドロップレット捕集部
18 ドロップレット
20 ドロプレット放出方向
22 アーク電源
24 制限用抵抗
26 絶縁導入端子
26a 絶縁導入端子
28 駆動機構
30a アーク安定化磁界発生器
30b アーク安定化磁界発生器
32 接続端子
34a ガス導入システム
34b ガス排出システム
35 誘導磁界発生器
36 誘導磁界発生器
38a 陰極材料イオン
38b 陰極材料イオン
40 電子
42 中性原子又は分子
43 プラズマ高密度領域(プラズマプルーム)
44 磁界
46a 中性原子放出方向
46b 陰極材料イオン放出方向
46c 陰極材料イオン放出方向
48 電子軌道
48a 電子軌道
50 格納室
52 装填部材
54 真空ベローズ
56 支持部材
58 押し出し機構
60 装填部
102 プラズマ発生部
104 陰極
104a 陰極面
104b 放出孔
106 トリガー電極
108 プラズマ
118 ドロップレット
120 ドロップレット放出方向
122 アーク電源
124 制限用抵抗
126 絶縁導入端子
130a アーク安定化磁界発生器
130b アーク安定化磁界発生器
134 導入口
140 陽極
161 流入口
162 排出口
164 陰極冷却部材
165 フランジ
166 覗き窓
167 コントローラ
168 フランジ
169 固定部材
173 邪魔板
Claims (8)
- 真空雰囲気下に設定されたプラズマ発生部で真空アーク放電を行ってプラズマを発生させるプラズマ生成装置において、前記プラズマ発生部には陰極と真空アークプラズマの起動及び維持用のトリガー兼陽極が配置され、前記陰極の陰極面は微細な凹凸形状を有し、前記陰極面と接触するトリガー兼陽極の陽極面は平坦表面を有し、プラズマ起動時に前記陽極面は一時的に前記陰極面に接触するように配置され、前記陰極面における微細な凸部先端と前記陽極面との接触点をプラズマ放出点とすることを特徴とするプラズマ生成装置。
- 前記トリガー兼陽極には駆動機構が付設され、この駆動機構により前記トリガー兼陽極がアークプラズマ起動位置とプラズマ衝突回避位置の間を反復的に移動可能に構成される請求項1に記載のプラズマ生成装置。
- 前記トリガー兼陽極の基端部に駆動機構が連結され、この駆動機構を支点として前記トリガー兼陽極がアークプラズマ起動位置とプラズマ衝突回避位置の間を反復的に揺動可能に構成される請求項1に記載のプラズマ生成装置。
- 前記トリガー兼陽極は幅狭の陽極基端部と幅広の陽極先端部を有するハンマー形状に構成され、この陽極先端部の先端面が前記陽極面となる請求項1〜3のいずれかに記載のプラズマ生成装置。
- 前記トリガー兼陽極に永久磁石又は電磁石が配設される請求項1〜4のいずれかに記載のプラズマ生成装置。
- 前記トリガー兼陽極の先端部がプラズマ生成物質から構成される請求項1〜5のいずれかに記載のプラズマ生成装置。
- 前記陰極を形成する陰極材料をプラズマ発生部に順次供給する陰極材料装填装置が設置され、直列配置された複数本の陰極材料の内、最先端にある陰極材料が前記陰極となり、陰極が消耗すると後続する陰極材料を前進させて新たな陰極とする請求項1〜6のいずれかに記載のプラズマ生成装置。
- 陰極材料を収容した格納室を設け、前記陰極材料装填装置に陰極材料を補給する請求項7に記載のプラズマ生成装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004075091A JP4373252B2 (ja) | 2004-03-16 | 2004-03-16 | プラズマ生成装置 |
DE602005027184T DE602005027184D1 (de) | 2004-03-16 | 2005-02-17 | Plasmagenerator |
CNB2005800083412A CN100542373C (zh) | 2004-03-16 | 2005-02-17 | 等离子体发生装置 |
PCT/JP2005/002477 WO2005089031A1 (ja) | 2004-03-16 | 2005-02-17 | プラズマ生成装置 |
US10/592,286 US7823537B2 (en) | 2004-03-16 | 2005-02-17 | Plasma generator |
EP05710327A EP1727406B1 (en) | 2004-03-16 | 2005-02-17 | Plasma generator |
AT05710327T ATE504075T1 (de) | 2004-03-16 | 2005-02-17 | Plasmagenerator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004075091A JP4373252B2 (ja) | 2004-03-16 | 2004-03-16 | プラズマ生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005267909A JP2005267909A (ja) | 2005-09-29 |
JP4373252B2 true JP4373252B2 (ja) | 2009-11-25 |
Family
ID=34976004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004075091A Expired - Lifetime JP4373252B2 (ja) | 2004-03-16 | 2004-03-16 | プラズマ生成装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7823537B2 (ja) |
EP (1) | EP1727406B1 (ja) |
JP (1) | JP4373252B2 (ja) |
CN (1) | CN100542373C (ja) |
AT (1) | ATE504075T1 (ja) |
DE (1) | DE602005027184D1 (ja) |
WO (1) | WO2005089031A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8268405B2 (en) * | 2005-08-23 | 2012-09-18 | Uwm Research Foundation, Inc. | Controlled decoration of carbon nanotubes with aerosol nanoparticles |
US8240190B2 (en) * | 2005-08-23 | 2012-08-14 | Uwm Research Foundation, Inc. | Ambient-temperature gas sensor |
WO2007065424A2 (de) | 2005-12-11 | 2007-06-14 | W.E.T. Automotive Systems Ag | Flächiges heizelement |
JP4660452B2 (ja) * | 2006-09-30 | 2011-03-30 | 株式会社フェローテック | 拡径管型プラズマ生成装置 |
US20080131360A1 (en) * | 2006-10-20 | 2008-06-05 | Charles Terrel Adams | Methods and systems of producing molecular hydrogen using a plasma system at various pressures |
US8211276B2 (en) * | 2006-10-20 | 2012-07-03 | Tetros Innovations, Llc | Methods and systems of producing fuel for an internal combustion engine using a plasma system at various pressures |
US20080131744A1 (en) * | 2006-10-20 | 2008-06-05 | Charles Terrel Adams | Methods and systems of producing molecular hydrogen using a low-temperature plasma system |
US8220440B2 (en) * | 2006-10-20 | 2012-07-17 | Tetros Innovations, Llc | Methods and systems for producing fuel for an internal combustion engine using a low-temperature plasma system |
US7946258B2 (en) * | 2006-10-20 | 2011-05-24 | Tetros Innovations, Llc | Method and apparatus to produce enriched hydrogen with a plasma system for an internal combustion engine |
US20080138676A1 (en) * | 2006-10-20 | 2008-06-12 | Charles Terrel Adams | Methods and systems of producing molecular hydrogen using a plasma system in combination with a membrane separation system |
WO2008127380A2 (en) * | 2006-10-20 | 2008-10-23 | Semgreen, L.P. | Methods and systems of producing fuel for an internal combustion engine using a plasma system |
JP5189784B2 (ja) * | 2007-03-30 | 2013-04-24 | 株式会社フェローテック | プラズマガン周辺を電気的中性にしたプラズマ生成装置 |
WO2011135782A1 (ja) * | 2010-04-26 | 2011-11-03 | パナソニック株式会社 | 二酸化炭素を還元する方法 |
SK500062013A3 (sk) * | 2013-03-05 | 2014-10-03 | Ga Drilling, A. S. | Generovanie elektrického oblúka, ktorý priamo plošne tepelne a mechanicky pôsobí na materiál a zariadenie na generovanie elektrického oblúka |
DE102015204592B4 (de) * | 2015-03-13 | 2016-12-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Beeinflussen einer Ausbreitung eines bei einem Vakuumlichtbogenprozess gebildeten Plasmas |
WO2016208094A1 (ja) * | 2015-06-24 | 2016-12-29 | キヤノンアネルバ株式会社 | 真空アーク成膜装置および成膜方法 |
JP6350603B2 (ja) * | 2016-07-07 | 2018-07-04 | トヨタ自動車株式会社 | アーク放電発生装置及び成膜方法 |
DE102019110642A1 (de) * | 2019-04-25 | 2020-10-29 | Vtd Vakuumtechnik Dresden Gmbh | Anode für PVD-Prozesse |
JP7391370B2 (ja) * | 2020-01-27 | 2023-12-05 | 株式会社Helix | 水プラズマ発生装置及びこれに用いられる通電部材、水プラズマ発生方法 |
CN111744752A (zh) * | 2020-05-27 | 2020-10-09 | 河北复朗施纳米科技有限公司 | 一种抑菌耐磨材料喷覆于智能锁表面的工艺方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825789A (en) * | 1973-06-29 | 1974-07-23 | Gen Electric | Vacuum arc devices with hard, ductile, ferrous electrodes |
US3911239A (en) * | 1974-03-28 | 1975-10-07 | Gen Electric | Vacuum arc devices with non-welding contacts |
JPS56151173A (en) | 1980-04-22 | 1981-11-24 | Mitsubishi Electric Corp | Rod feeder |
US4512867A (en) * | 1981-11-24 | 1985-04-23 | Andreev Anatoly A | Method and apparatus for controlling plasma generation in vapor deposition |
IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
JPS63210099A (ja) * | 1987-02-26 | 1988-08-31 | Nissin Electric Co Ltd | ダイヤモンド膜の作製方法 |
JPH0766726B2 (ja) | 1989-09-25 | 1995-07-19 | 株式会社日立製作所 | トリガ放電装置 |
GB9503305D0 (en) * | 1995-02-20 | 1995-04-12 | Univ Nanyang | Filtered cathodic arc source |
CN2287157Y (zh) * | 1996-01-25 | 1998-08-05 | 核工业西南物理研究院 | 一种金属蒸汽真空弧离子源 |
JPH09285865A (ja) | 1996-04-22 | 1997-11-04 | Toyota Motor Corp | 板部材のアーク溶接方法および溶接スタッド |
GB9615548D0 (en) * | 1996-07-24 | 1996-09-04 | Univ Nanyang | Cathode arc source and graphite target |
GB9722650D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source with target feeding apparatus |
JPH11329172A (ja) | 1998-05-19 | 1999-11-30 | Toshiba Corp | 真空バルブ |
JPH11350115A (ja) | 1998-06-12 | 1999-12-21 | Ulvac Corp | 同軸型真空アーク蒸着源を用いた蒸着装置 |
JP3110729B1 (ja) | 1999-06-15 | 2000-11-20 | 不二電機工業株式会社 | 固定具 |
ES2208203T3 (es) | 1999-11-17 | 2004-06-16 | APPLIED FILMS GMBH & CO. KG | Disposicion de electrodos. |
US6495002B1 (en) * | 2000-04-07 | 2002-12-17 | Hy-Tech Research Corporation | Method and apparatus for depositing ceramic films by vacuum arc deposition |
JP3860954B2 (ja) * | 2000-07-07 | 2006-12-20 | 株式会社日立グローバルストレージテクノロジーズ | リアルタイムパーティクルフィルタを具備したプラズマ処理装置 |
JP4045953B2 (ja) * | 2002-12-27 | 2008-02-13 | 日新電機株式会社 | 真空アーク蒸着装置 |
CN2594277Y (zh) * | 2003-01-15 | 2003-12-24 | 北京师范大学 | 视线外磁过滤金属蒸气真空弧等离子体沉积源 |
-
2004
- 2004-03-16 JP JP2004075091A patent/JP4373252B2/ja not_active Expired - Lifetime
-
2005
- 2005-02-17 US US10/592,286 patent/US7823537B2/en active Active
- 2005-02-17 DE DE602005027184T patent/DE602005027184D1/de active Active
- 2005-02-17 CN CNB2005800083412A patent/CN100542373C/zh active Active
- 2005-02-17 WO PCT/JP2005/002477 patent/WO2005089031A1/ja not_active Application Discontinuation
- 2005-02-17 EP EP05710327A patent/EP1727406B1/en active Active
- 2005-02-17 AT AT05710327T patent/ATE504075T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7823537B2 (en) | 2010-11-02 |
CN1934914A (zh) | 2007-03-21 |
WO2005089031A1 (ja) | 2005-09-22 |
EP1727406A1 (en) | 2006-11-29 |
US20070193518A1 (en) | 2007-08-23 |
ATE504075T1 (de) | 2011-04-15 |
CN100542373C (zh) | 2009-09-16 |
EP1727406B1 (en) | 2011-03-30 |
DE602005027184D1 (de) | 2011-05-12 |
EP1727406A4 (en) | 2007-04-18 |
JP2005267909A (ja) | 2005-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4373252B2 (ja) | プラズマ生成装置 | |
EP0753081B1 (en) | An electron jet vapor deposition system | |
US6663755B2 (en) | Filtered cathodic arc deposition method and apparatus | |
EP2602354A1 (en) | Filtered cathodic vacuum arc deposition apparatus and method | |
JP2002008893A (ja) | プラズマ加工法 | |
JP2002105628A (ja) | 真空アーク蒸着装置 | |
JP4319556B2 (ja) | プラズマ生成装置 | |
JP2017066483A (ja) | マグネトロンスパッタ法による成膜装置および成膜方法 | |
JP2001058266A (ja) | アーク式蒸発源 | |
JP2001059165A (ja) | アーク式イオンプレーティング装置 | |
JP2001348662A (ja) | 成膜方法及び装置 | |
JP4017310B2 (ja) | 成膜装置 | |
JP3546019B2 (ja) | 成膜方法及び装置 | |
JP4019457B2 (ja) | アーク式蒸発源 | |
EP0725424A1 (en) | Arc-type evaporator | |
JP2004353023A (ja) | アーク放電方式のイオンプレーティング装置 | |
JP2916972B2 (ja) | プラズマ発生方法及びその装置 | |
JP2001295031A (ja) | 成膜装置及び方法 | |
JP2001003160A (ja) | 膜形成方法およびその装置 | |
JP2004183021A (ja) | 成膜装置及び成膜方法 | |
JP2005187864A (ja) | 成膜装置および成膜方法 | |
JPH08260132A (ja) | 真空アーク蒸着方法及び装置 | |
JP2973171B2 (ja) | プラズマ制御方法及び装置 | |
JPH11335818A (ja) | 成膜方法 | |
JP2006169562A (ja) | 表面処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090807 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090901 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090903 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120911 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4373252 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130911 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |