JP6126302B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP6126302B2 JP6126302B2 JP2016508319A JP2016508319A JP6126302B2 JP 6126302 B2 JP6126302 B2 JP 6126302B2 JP 2016508319 A JP2016508319 A JP 2016508319A JP 2016508319 A JP2016508319 A JP 2016508319A JP 6126302 B2 JP6126302 B2 JP 6126302B2
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- 230000008021 deposition Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 47
- 238000010891 electric arc Methods 0.000 claims description 46
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 description 32
- 238000000034 method Methods 0.000 description 30
- 230000008569 process Effects 0.000 description 18
- 238000012545 processing Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- -1 carbon ion Chemical class 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8408—Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
- H01J37/32064—Circuits specially adapted for controlling the arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32944—Arc detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
Description
Claims (10)
- 基板に膜を形成する成膜装置であって、
ターゲットを回転軸の周りに回転させる回転部と、
アーク放電を発生させるためのストライカと、
前記アーク放電を発生させるために前記ストライカを前記ターゲットの前記回転軸周りの側面に近づけた近接状態にするように、前記ストライカを駆動する駆動部と、
前記近接状態において前記ストライカに対向する前記ターゲットの前記側面における対向位置を変更するように、前記回転部による前記ターゲットの回転を制御する制御部と、
を有することを特徴とする成膜装置。 - 前記ターゲットを前記回転軸に沿って移動させる移動部を更に有し、
前記制御部は、前記近接状態において前記ストライカに対向する前記ターゲットの前記側面における対向位置を変更するように、前記移動部による前記ターゲットの移動を更に制御することを特徴とする請求項1に記載の成膜装置。 - 前記制御部は、前記ターゲットが前記回転軸の周りに1回転した後、前記ターゲットが前記回転軸に沿って移動するように、前記回転部による前記ターゲットの回転及び前記移動部による前記ターゲットの移動を制御することを特徴とする請求項2に記載の成膜装置。
- 前記制御部は、前記対向位置の前記ターゲットの前記側面における軌跡がらせん状になるように、前記回転部による前記ターゲットの回転及び前記移動部による前記ターゲットの移動を制御することを特徴とする請求項2に記載の成膜装置。
- 前記制御部は、前記アーク放電を発生させる度に前記対向位置を変更することを特徴とする請求項1乃至4のうちいずれか1項に記載の成膜装置。
- 前記制御部は、前記アーク放電によって前記ターゲットに生じるアークスポットのサイズが予め定められたサイズよりも大きくなる度に前記対向位置を変更することを特徴とする請求項1乃至4のうちいずれか1項に記載の成膜装置。
- 前記制御部は、前記アーク放電によって前記ターゲットに生じるアークスポットの一部が重なるように前記対向位置を変更することを特徴とする請求項1乃至6のうちいずれか1項に記載の成膜装置。
- 前記ターゲットに対向して配置されるアノードを更に有し、
前記駆動部は、前記アノードと前記近接状態における前記ストライカとの距離が一定となるように、前記ストライカを駆動することを特徴とする請求項1乃至7のうちいずれか1項に記載の成膜装置。 - 前記ターゲットは、円柱形状、角柱形状、円筒形状又は角筒形状を有することを特徴とする請求項1乃至8のうちいずれか1項に記載の成膜装置。
- 基板に膜を形成する成膜装置であって、
ターゲットを軸に沿って移動させる移動部と、
アーク放電を発生させるためのストライカと、
前記アーク放電を発生させるために前記ストライカを前記ターゲットの前記軸周りの側面に近づけた近接状態にするように、前記ストライカを駆動する駆動部と、
前記近接状態において前記ストライカに対向する前記ターゲットの前記側面における対向位置を変更するように、前記移動部による前記ターゲットの移動を制御する制御部と、
を有することを特徴とする成膜装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014055570 | 2014-03-18 | ||
JP2014055570 | 2014-03-18 | ||
PCT/JP2014/005736 WO2015140858A1 (ja) | 2014-03-18 | 2014-11-14 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015140858A1 JPWO2015140858A1 (ja) | 2017-04-06 |
JP6126302B2 true JP6126302B2 (ja) | 2017-05-10 |
Family
ID=54143884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016508319A Active JP6126302B2 (ja) | 2014-03-18 | 2014-11-14 | 成膜装置 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10676813B2 (ja) |
JP (1) | JP6126302B2 (ja) |
KR (1) | KR101862967B1 (ja) |
CN (2) | CN110158038B (ja) |
SG (1) | SG11201606347XA (ja) |
TW (1) | TWI593818B (ja) |
WO (1) | WO2015140858A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110158038B (zh) * | 2014-03-18 | 2022-01-18 | 佳能安内华股份有限公司 | 沉积装置 |
JP6205441B2 (ja) * | 2016-01-26 | 2017-09-27 | 株式会社神戸製鋼所 | アーク蒸発装置 |
JP6350603B2 (ja) * | 2016-07-07 | 2018-07-04 | トヨタ自動車株式会社 | アーク放電発生装置及び成膜方法 |
JP6487611B1 (ja) * | 2017-12-27 | 2019-03-20 | キヤノンアネルバ株式会社 | 成膜方法および成膜装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS517866A (ja) | 1974-06-26 | 1976-01-22 | Hitachi Ltd | Sairisutakudohoshiki |
JPH0517866A (ja) * | 1991-07-11 | 1993-01-26 | Nissin Electric Co Ltd | アーク式蒸発源 |
GB9503305D0 (en) | 1995-02-20 | 1995-04-12 | Univ Nanyang | Filtered cathodic arc source |
JP3732250B2 (ja) | 1995-03-30 | 2006-01-05 | キヤノンアネルバ株式会社 | インライン式成膜装置 |
DE19618073C1 (de) * | 1996-05-06 | 1997-09-18 | Inovap Vakuum Und Plasmatechni | Zündeinrichtung für einen Vakuumbogenverdampfer |
US5896012A (en) * | 1997-08-08 | 1999-04-20 | Kabushiki Kaisha Kobe Seiko Sho | Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode |
JPH11350115A (ja) * | 1998-06-12 | 1999-12-21 | Ulvac Corp | 同軸型真空アーク蒸着源を用いた蒸着装置 |
JP2004162084A (ja) | 2002-11-11 | 2004-06-10 | Fujitsu Ltd | 成膜方法および成膜装置 |
JP3823914B2 (ja) * | 2002-11-20 | 2006-09-20 | 日新電機株式会社 | 真空アーク蒸着用の蒸発源装置及び真空アーク蒸着装置 |
CN2585870Y (zh) * | 2002-12-24 | 2003-11-12 | 中国科学院物理研究所 | 采用电弧加热靶材蒸积制备大面积薄膜的装置 |
JP4269263B2 (ja) * | 2003-07-01 | 2009-05-27 | 富士電機デバイステクノロジー株式会社 | 硬質カーボン膜の形成方法および装置 |
JP2005029855A (ja) * | 2003-07-08 | 2005-02-03 | Fuji Electric Device Technology Co Ltd | 真空アーク蒸着装置、真空アーク蒸着法、および磁気記録媒体 |
JP4110175B2 (ja) * | 2006-03-22 | 2008-07-02 | 株式会社神戸製鋼所 | アークイオンプレーティング方法 |
JP2008050653A (ja) * | 2006-08-24 | 2008-03-06 | Shimadzu Corp | 成膜装置、および成膜方法 |
JP5063143B2 (ja) * | 2007-03-02 | 2012-10-31 | 株式会社リケン | アーク式蒸発源 |
JP4633816B2 (ja) * | 2008-03-31 | 2011-02-16 | 株式会社フェローテック | ターゲット交換式プラズマ発生装置 |
WO2010073330A1 (ja) | 2008-12-25 | 2010-07-01 | キヤノンアネルバ株式会社 | スパッタリング装置 |
TWI379916B (en) * | 2009-02-24 | 2012-12-21 | Ind Tech Res Inst | Vacuum coating device and coating method |
JP4576476B1 (ja) * | 2009-12-28 | 2010-11-10 | 株式会社フェローテック | ストライカ式プラズマ発生装置及びプラズマ処理装置 |
CN101792895B (zh) * | 2010-03-25 | 2012-07-25 | 中国科学院宁波材料技术与工程研究所 | 阴极真空电弧源薄膜沉积装置及沉积薄膜的方法 |
WO2013099059A1 (ja) * | 2011-12-28 | 2013-07-04 | キヤノンアネルバ株式会社 | 成膜装置 |
WO2013099058A1 (ja) * | 2011-12-28 | 2013-07-04 | キヤノンアネルバ株式会社 | 成膜装置 |
CN110158038B (zh) * | 2014-03-18 | 2022-01-18 | 佳能安内华股份有限公司 | 沉积装置 |
JP6403269B2 (ja) * | 2014-07-30 | 2018-10-10 | 株式会社神戸製鋼所 | アーク蒸発源 |
JP6487611B1 (ja) * | 2017-12-27 | 2019-03-20 | キヤノンアネルバ株式会社 | 成膜方法および成膜装置 |
-
2014
- 2014-11-14 CN CN201910483671.0A patent/CN110158038B/zh active Active
- 2014-11-14 CN CN201480075404.5A patent/CN106029941B/zh active Active
- 2014-11-14 JP JP2016508319A patent/JP6126302B2/ja active Active
- 2014-11-14 WO PCT/JP2014/005736 patent/WO2015140858A1/ja active Application Filing
- 2014-11-14 SG SG11201606347XA patent/SG11201606347XA/en unknown
- 2014-11-14 KR KR1020167028428A patent/KR101862967B1/ko active IP Right Grant
-
2015
- 2015-01-14 TW TW104101179A patent/TWI593818B/zh active
-
2016
- 2016-07-15 US US15/211,233 patent/US10676813B2/en active Active
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2020
- 2020-04-28 US US16/860,646 patent/US11821067B2/en active Active
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2023
- 2023-10-11 US US18/484,808 patent/US20240052477A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN110158038B (zh) | 2022-01-18 |
CN106029941B (zh) | 2019-06-18 |
TW201536942A (zh) | 2015-10-01 |
KR101862967B1 (ko) | 2018-07-04 |
US11821067B2 (en) | 2023-11-21 |
CN106029941A (zh) | 2016-10-12 |
KR20160132969A (ko) | 2016-11-21 |
WO2015140858A1 (ja) | 2015-09-24 |
US20200255933A1 (en) | 2020-08-13 |
US20160326630A1 (en) | 2016-11-10 |
TWI593818B (zh) | 2017-08-01 |
US10676813B2 (en) | 2020-06-09 |
JPWO2015140858A1 (ja) | 2017-04-06 |
CN110158038A (zh) | 2019-08-23 |
US20240052477A1 (en) | 2024-02-15 |
SG11201606347XA (en) | 2016-09-29 |
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