US8018058B2
(en)
*
|
2004-06-21 |
2011-09-13 |
Besang Inc. |
Semiconductor memory device
|
US8058142B2
(en)
*
|
1996-11-04 |
2011-11-15 |
Besang Inc. |
Bonded semiconductor structure and method of making the same
|
US20050280155A1
(en)
*
|
2004-06-21 |
2005-12-22 |
Sang-Yun Lee |
Semiconductor bonding and layer transfer method
|
US7052941B2
(en)
*
|
2003-06-24 |
2006-05-30 |
Sang-Yun Lee |
Method for making a three-dimensional integrated circuit structure
|
FR2773261B1
(fr)
*
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
|
FR2774510B1
(fr)
|
1998-02-02 |
2001-10-26 |
Soitec Silicon On Insulator |
Procede de traitement de substrats, notamment semi-conducteurs
|
JP3809733B2
(ja)
|
1998-02-25 |
2006-08-16 |
セイコーエプソン株式会社 |
薄膜トランジスタの剥離方法
|
US7227176B2
(en)
|
1998-04-10 |
2007-06-05 |
Massachusetts Institute Of Technology |
Etch stop layer system
|
JP3211233B2
(ja)
*
|
1998-08-31 |
2001-09-25 |
日本電気株式会社 |
Soi基板及びその製造方法
|
FR2784796B1
(fr)
*
|
1998-10-15 |
2001-11-23 |
Commissariat Energie Atomique |
Procede de realisation d'une couche de materiau enterree dans un autre materiau
|
FR2811807B1
(fr)
*
|
2000-07-12 |
2003-07-04 |
Commissariat Energie Atomique |
Procede de decoupage d'un bloc de materiau et de formation d'un film mince
|
DE60125952T2
(de)
|
2000-08-16 |
2007-08-02 |
Massachusetts Institute Of Technology, Cambridge |
Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
|
US6890835B1
(en)
*
|
2000-10-19 |
2005-05-10 |
International Business Machines Corporation |
Layer transfer of low defect SiGe using an etch-back process
|
FR2840731B3
(fr)
*
|
2002-06-11 |
2004-07-30 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
|
US8507361B2
(en)
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
FR2894990B1
(fr)
*
|
2005-12-21 |
2008-02-22 |
Soitec Silicon On Insulator |
Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
|
US6940089B2
(en)
|
2001-04-04 |
2005-09-06 |
Massachusetts Institute Of Technology |
Semiconductor device structure
|
FR2823596B1
(fr)
*
|
2001-04-13 |
2004-08-20 |
Commissariat Energie Atomique |
Substrat ou structure demontable et procede de realisation
|
FR2823599B1
(fr)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
Substrat demomtable a tenue mecanique controlee et procede de realisation
|
US7238622B2
(en)
*
|
2001-04-17 |
2007-07-03 |
California Institute Of Technology |
Wafer bonded virtual substrate and method for forming the same
|
US20050026432A1
(en)
*
|
2001-04-17 |
2005-02-03 |
Atwater Harry A. |
Wafer bonded epitaxial templates for silicon heterostructures
|
CA2482258A1
(en)
|
2001-04-17 |
2002-10-24 |
California Institute Of Technology |
A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
|
US6956268B2
(en)
*
|
2001-05-18 |
2005-10-18 |
Reveo, Inc. |
MEMS and method of manufacturing MEMS
|
US7045878B2
(en)
|
2001-05-18 |
2006-05-16 |
Reveo, Inc. |
Selectively bonded thin film layer and substrate layer for processing of useful devices
|
FR2828762B1
(fr)
*
|
2001-08-14 |
2003-12-05 |
Soitec Silicon On Insulator |
Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique
|
US6875671B2
(en)
*
|
2001-09-12 |
2005-04-05 |
Reveo, Inc. |
Method of fabricating vertical integrated circuits
|
US7033910B2
(en)
*
|
2001-09-12 |
2006-04-25 |
Reveo, Inc. |
Method of fabricating multi layer MEMS and microfluidic devices
|
US7163826B2
(en)
*
|
2001-09-12 |
2007-01-16 |
Reveo, Inc |
Method of fabricating multi layer devices on buried oxide layer substrates
|
US6555451B1
(en)
|
2001-09-28 |
2003-04-29 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making shallow diffusion junctions in semiconductors using elemental doping
|
FR2830983B1
(fr)
|
2001-10-11 |
2004-05-14 |
Commissariat Energie Atomique |
Procede de fabrication de couches minces contenant des microcomposants
|
US6593212B1
(en)
|
2001-10-29 |
2003-07-15 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making electro-optical devices using a hydrogenion splitting technique
|
US6562127B1
(en)
|
2002-01-16 |
2003-05-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making mosaic array of thin semiconductor material of large substrates
|
AU2003222003A1
(en)
|
2002-03-14 |
2003-09-29 |
Amberwave Systems Corporation |
Methods for fabricating strained layers on semiconductor substrates
|
US6607969B1
(en)
|
2002-03-18 |
2003-08-19 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
|
US6767749B2
(en)
|
2002-04-22 |
2004-07-27 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
|
US7074623B2
(en)
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
US7307273B2
(en)
|
2002-06-07 |
2007-12-11 |
Amberwave Systems Corporation |
Control of strain in device layers by selective relaxation
|
US7335545B2
(en)
|
2002-06-07 |
2008-02-26 |
Amberwave Systems Corporation |
Control of strain in device layers by prevention of relaxation
|
US20030227057A1
(en)
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
FR2842648B1
(fr)
*
|
2002-07-18 |
2005-01-14 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince electriquement active
|
US7176108B2
(en)
|
2002-11-07 |
2007-02-13 |
Soitec Silicon On Insulator |
Method of detaching a thin film at moderate temperature after co-implantation
|
FR2847075B1
(fr)
*
|
2002-11-07 |
2005-02-18 |
Commissariat Energie Atomique |
Procede de formation d'une zone fragile dans un substrat par co-implantation
|
FR2848336B1
(fr)
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
Procede de realisation d'une structure contrainte destinee a etre dissociee
|
FR2849017B1
(fr)
|
2002-12-20 |
2005-11-18 |
Michel Bruel |
Procede de traitement d'une structure pour l'obtention d'un espace interne et structure presentant un espace interne.
|
US20100133695A1
(en)
*
|
2003-01-12 |
2010-06-03 |
Sang-Yun Lee |
Electronic circuit with embedded memory
|
WO2004071948A2
(en)
*
|
2003-02-10 |
2004-08-26 |
Reveo, Inc. |
Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
|
US8071438B2
(en)
*
|
2003-06-24 |
2011-12-06 |
Besang Inc. |
Semiconductor circuit
|
FR2856844B1
(fr)
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
Circuit integre sur puce de hautes performances
|
US20100190334A1
(en)
*
|
2003-06-24 |
2010-07-29 |
Sang-Yun Lee |
Three-dimensional semiconductor structure and method of manufacturing the same
|
TWI240434B
(en)
*
|
2003-06-24 |
2005-09-21 |
Osram Opto Semiconductors Gmbh |
Method to produce semiconductor-chips
|
FR2857953B1
(fr)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
Structure empilee, et procede pour la fabriquer
|
JP2005093898A
(ja)
*
|
2003-09-19 |
2005-04-07 |
Sanyo Electric Co Ltd |
結晶基板および素子の製造方法
|
FR2861497B1
(fr)
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
US7772087B2
(en)
|
2003-12-19 |
2010-08-10 |
Commissariat A L'energie Atomique |
Method of catastrophic transfer of a thin film after co-implantation
|
US20080211061A1
(en)
*
|
2004-04-21 |
2008-09-04 |
California Institute Of Technology |
Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates
|
WO2006015185A2
(en)
*
|
2004-07-30 |
2006-02-09 |
Aonex Technologies, Inc. |
GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
|
US7846759B2
(en)
*
|
2004-10-21 |
2010-12-07 |
Aonex Technologies, Inc. |
Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
|
US7393733B2
(en)
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
US20060113603A1
(en)
*
|
2004-12-01 |
2006-06-01 |
Amberwave Systems Corporation |
Hybrid semiconductor-on-insulator structures and related methods
|
DE102004062290A1
(de)
*
|
2004-12-23 |
2006-07-06 |
Osram Opto Semiconductors Gmbh |
Verfahren zur Herstellung eines Halbleiterchips
|
US10374120B2
(en)
*
|
2005-02-18 |
2019-08-06 |
Koninklijke Philips N.V. |
High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
|
US8455978B2
(en)
|
2010-05-27 |
2013-06-04 |
Sang-Yun Lee |
Semiconductor circuit structure and method of making the same
|
US8367524B2
(en)
*
|
2005-03-29 |
2013-02-05 |
Sang-Yun Lee |
Three-dimensional integrated circuit structure
|
US20110143506A1
(en)
*
|
2009-12-10 |
2011-06-16 |
Sang-Yun Lee |
Method for fabricating a semiconductor memory device
|
TW200707799A
(en)
*
|
2005-04-21 |
2007-02-16 |
Aonex Technologies Inc |
Bonded intermediate substrate and method of making same
|
FR2886051B1
(fr)
|
2005-05-20 |
2007-08-10 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince
|
FR2889887B1
(fr)
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
Procede de report d'une couche mince sur un support
|
FR2891281B1
(fr)
|
2005-09-28 |
2007-12-28 |
Commissariat Energie Atomique |
Procede de fabrication d'un element en couches minces.
|
DE102005054218B4
(de)
*
|
2005-11-14 |
2011-06-09 |
Infineon Technologies Ag |
Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
|
DE102006007293B4
(de)
|
2006-01-31 |
2023-04-06 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
|
FR2899378B1
(fr)
|
2006-03-29 |
2008-06-27 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince par fusion de precipites
|
US20070243703A1
(en)
*
|
2006-04-14 |
2007-10-18 |
Aonex Technololgies, Inc. |
Processes and structures for epitaxial growth on laminate substrates
|
FR2910179B1
(fr)
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
|
US7732301B1
(en)
|
2007-04-20 |
2010-06-08 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
US20090278233A1
(en)
*
|
2007-07-26 |
2009-11-12 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
FR2925221B1
(fr)
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince
|
JP2012514316A
(ja)
*
|
2008-09-24 |
2012-06-21 |
エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ |
半導体材料、半導体構造、デバイスおよびそれらを含む加工された基板の緩和した層を形成する方法
|
US8278193B2
(en)
|
2008-10-30 |
2012-10-02 |
Soitec |
Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
|
US8637383B2
(en)
|
2010-12-23 |
2014-01-28 |
Soitec |
Strain relaxation using metal materials and related structures
|
US7927975B2
(en)
|
2009-02-04 |
2011-04-19 |
Micron Technology, Inc. |
Semiconductor material manufacture
|
US8754533B2
(en)
|
2009-04-14 |
2014-06-17 |
Monolithic 3D Inc. |
Monolithic three-dimensional semiconductor device and structure
|
US8058137B1
(en)
|
2009-04-14 |
2011-11-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8362482B2
(en)
|
2009-04-14 |
2013-01-29 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8362800B2
(en)
|
2010-10-13 |
2013-01-29 |
Monolithic 3D Inc. |
3D semiconductor device including field repairable logics
|
US9509313B2
(en)
|
2009-04-14 |
2016-11-29 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8427200B2
(en)
|
2009-04-14 |
2013-04-23 |
Monolithic 3D Inc. |
3D semiconductor device
|
US9577642B2
(en)
|
2009-04-14 |
2017-02-21 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device
|
US8378715B2
(en)
|
2009-04-14 |
2013-02-19 |
Monolithic 3D Inc. |
Method to construct systems
|
US8405420B2
(en)
|
2009-04-14 |
2013-03-26 |
Monolithic 3D Inc. |
System comprising a semiconductor device and structure
|
US7986042B2
(en)
|
2009-04-14 |
2011-07-26 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8373439B2
(en)
|
2009-04-14 |
2013-02-12 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8669778B1
(en)
|
2009-04-14 |
2014-03-11 |
Monolithic 3D Inc. |
Method for design and manufacturing of a 3D semiconductor device
|
US8384426B2
(en)
|
2009-04-14 |
2013-02-26 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8395191B2
(en)
|
2009-10-12 |
2013-03-12 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9711407B2
(en)
|
2009-04-14 |
2017-07-18 |
Monolithic 3D Inc. |
Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
|
FR2947098A1
(fr)
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
|
US10388863B2
(en)
|
2009-10-12 |
2019-08-20 |
Monolithic 3D Inc. |
3D memory device and structure
|
US10366970B2
(en)
|
2009-10-12 |
2019-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10910364B2
(en)
|
2009-10-12 |
2021-02-02 |
Monolitaic 3D Inc. |
3D semiconductor device
|
US8294159B2
(en)
|
2009-10-12 |
2012-10-23 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9099424B1
(en)
|
2012-08-10 |
2015-08-04 |
Monolithic 3D Inc. |
Semiconductor system, device and structure with heat removal
|
US8476145B2
(en)
|
2010-10-13 |
2013-07-02 |
Monolithic 3D Inc. |
Method of fabricating a semiconductor device and structure
|
US10354995B2
(en)
|
2009-10-12 |
2019-07-16 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US10157909B2
(en)
|
2009-10-12 |
2018-12-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8742476B1
(en)
|
2012-11-27 |
2014-06-03 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US12027518B1
(en)
|
2009-10-12 |
2024-07-02 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with metal layers
|
US11984445B2
(en)
|
2009-10-12 |
2024-05-14 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with metal layers
|
US8536023B2
(en)
|
2010-11-22 |
2013-09-17 |
Monolithic 3D Inc. |
Method of manufacturing a semiconductor device and structure
|
US10043781B2
(en)
|
2009-10-12 |
2018-08-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11374118B2
(en)
|
2009-10-12 |
2022-06-28 |
Monolithic 3D Inc. |
Method to form a 3D integrated circuit
|
US11018133B2
(en)
|
2009-10-12 |
2021-05-25 |
Monolithic 3D Inc. |
3D integrated circuit
|
US8450804B2
(en)
|
2011-03-06 |
2013-05-28 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US8581349B1
(en)
|
2011-05-02 |
2013-11-12 |
Monolithic 3D Inc. |
3D memory semiconductor device and structure
|
US8461035B1
(en)
|
2010-09-30 |
2013-06-11 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8541819B1
(en)
|
2010-12-09 |
2013-09-24 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8373230B1
(en)
|
2010-10-13 |
2013-02-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8026521B1
(en)
|
2010-10-11 |
2011-09-27 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9099526B2
(en)
|
2010-02-16 |
2015-08-04 |
Monolithic 3D Inc. |
Integrated circuit device and structure
|
US8492886B2
(en)
|
2010-02-16 |
2013-07-23 |
Monolithic 3D Inc |
3D integrated circuit with logic
|
US8723335B2
(en)
|
2010-05-20 |
2014-05-13 |
Sang-Yun Lee |
Semiconductor circuit structure and method of forming the same using a capping layer
|
KR101134819B1
(ko)
|
2010-07-02 |
2012-04-13 |
이상윤 |
반도체 메모리 장치의 제조 방법
|
US9219005B2
(en)
|
2011-06-28 |
2015-12-22 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US8901613B2
(en)
|
2011-03-06 |
2014-12-02 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US8642416B2
(en)
|
2010-07-30 |
2014-02-04 |
Monolithic 3D Inc. |
Method of forming three dimensional integrated circuit devices using layer transfer technique
|
US10217667B2
(en)
|
2011-06-28 |
2019-02-26 |
Monolithic 3D Inc. |
3D semiconductor device, fabrication method and system
|
US9953925B2
(en)
|
2011-06-28 |
2018-04-24 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US10497713B2
(en)
|
2010-11-18 |
2019-12-03 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US8273610B2
(en)
|
2010-11-18 |
2012-09-25 |
Monolithic 3D Inc. |
Method of constructing a semiconductor device and structure
|
US11482440B2
(en)
|
2010-12-16 |
2022-10-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
|
US8163581B1
(en)
|
2010-10-13 |
2012-04-24 |
Monolith IC 3D |
Semiconductor and optoelectronic devices
|
US11315980B1
(en)
|
2010-10-11 |
2022-04-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US11600667B1
(en)
|
2010-10-11 |
2023-03-07 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11024673B1
(en)
|
2010-10-11 |
2021-06-01 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8114757B1
(en)
|
2010-10-11 |
2012-02-14 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11257867B1
(en)
|
2010-10-11 |
2022-02-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with oxide bonds
|
US11158674B2
(en)
|
2010-10-11 |
2021-10-26 |
Monolithic 3D Inc. |
Method to produce a 3D semiconductor device and structure
|
US10290682B2
(en)
|
2010-10-11 |
2019-05-14 |
Monolithic 3D Inc. |
3D IC semiconductor device and structure with stacked memory
|
US11018191B1
(en)
|
2010-10-11 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10896931B1
(en)
|
2010-10-11 |
2021-01-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11469271B2
(en)
|
2010-10-11 |
2022-10-11 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11227897B2
(en)
|
2010-10-11 |
2022-01-18 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11437368B2
(en)
|
2010-10-13 |
2022-09-06 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11404466B2
(en)
|
2010-10-13 |
2022-08-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11605663B2
(en)
|
2010-10-13 |
2023-03-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11929372B2
(en)
|
2010-10-13 |
2024-03-12 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US10998374B1
(en)
|
2010-10-13 |
2021-05-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11855114B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11327227B2
(en)
|
2010-10-13 |
2022-05-10 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11869915B2
(en)
|
2010-10-13 |
2024-01-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11133344B2
(en)
|
2010-10-13 |
2021-09-28 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US9197804B1
(en)
|
2011-10-14 |
2015-11-24 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US8379458B1
(en)
|
2010-10-13 |
2013-02-19 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11164898B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11163112B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11043523B1
(en)
|
2010-10-13 |
2021-06-22 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US10679977B2
(en)
|
2010-10-13 |
2020-06-09 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US11984438B2
(en)
|
2010-10-13 |
2024-05-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US10833108B2
(en)
|
2010-10-13 |
2020-11-10 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US11855100B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11694922B2
(en)
|
2010-10-13 |
2023-07-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US10978501B1
(en)
|
2010-10-13 |
2021-04-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11063071B1
(en)
|
2010-10-13 |
2021-07-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US10943934B2
(en)
|
2010-10-13 |
2021-03-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11495484B2
(en)
|
2010-11-18 |
2022-11-08 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with at least two single-crystal layers
|
US11854857B1
(en)
|
2010-11-18 |
2023-12-26 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11482439B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
|
US11164770B1
(en)
|
2010-11-18 |
2021-11-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11610802B2
(en)
|
2010-11-18 |
2023-03-21 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
|
US11355380B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
|
US11521888B2
(en)
|
2010-11-18 |
2022-12-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure with high-k metal gate transistors
|
US11508605B2
(en)
|
2010-11-18 |
2022-11-22 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11923230B1
(en)
|
2010-11-18 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11862503B2
(en)
|
2010-11-18 |
2024-01-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11804396B2
(en)
|
2010-11-18 |
2023-10-31 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11482438B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11004719B1
(en)
|
2010-11-18 |
2021-05-11 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11121021B2
(en)
|
2010-11-18 |
2021-09-14 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11784082B2
(en)
|
2010-11-18 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11615977B2
(en)
|
2010-11-18 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11018042B1
(en)
|
2010-11-18 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US12068187B2
(en)
|
2010-11-18 |
2024-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding and DRAM memory cells
|
US12033884B2
(en)
|
2010-11-18 |
2024-07-09 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11443971B2
(en)
|
2010-11-18 |
2022-09-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11211279B2
(en)
|
2010-11-18 |
2021-12-28 |
Monolithic 3D Inc. |
Method for processing a 3D integrated circuit and structure
|
US11901210B2
(en)
|
2010-11-18 |
2024-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11107721B2
(en)
|
2010-11-18 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with NAND logic
|
US11355381B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11094576B1
(en)
|
2010-11-18 |
2021-08-17 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11569117B2
(en)
|
2010-11-18 |
2023-01-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11735462B2
(en)
|
2010-11-18 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11031275B2
(en)
|
2010-11-18 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US8975670B2
(en)
|
2011-03-06 |
2015-03-10 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US10388568B2
(en)
|
2011-06-28 |
2019-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and system
|
FR2978600B1
(fr)
|
2011-07-25 |
2014-02-07 |
Soitec Silicon On Insulator |
Procede et dispositif de fabrication de couche de materiau semi-conducteur
|
TWI573198B
(zh)
*
|
2011-09-27 |
2017-03-01 |
索泰克公司 |
在三度空間集積製程中轉移材料層之方法及其相關結構與元件
|
US8673733B2
(en)
|
2011-09-27 |
2014-03-18 |
Soitec |
Methods of transferring layers of material in 3D integration processes and related structures and devices
|
US8841742B2
(en)
|
2011-09-27 |
2014-09-23 |
Soitec |
Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
|
FR2981501B1
(fr)
*
|
2011-10-17 |
2016-05-13 |
Soitec Silicon On Insulator |
Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes
|
US8687399B2
(en)
|
2011-10-02 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9029173B2
(en)
|
2011-10-18 |
2015-05-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9000557B2
(en)
|
2012-03-17 |
2015-04-07 |
Zvi Or-Bach |
Semiconductor device and structure
|
US11594473B2
(en)
|
2012-04-09 |
2023-02-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11735501B1
(en)
|
2012-04-09 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11088050B2
(en)
|
2012-04-09 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers
|
US11616004B1
(en)
|
2012-04-09 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US10600888B2
(en)
|
2012-04-09 |
2020-03-24 |
Monolithic 3D Inc. |
3D semiconductor device
|
US11164811B2
(en)
|
2012-04-09 |
2021-11-02 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers and oxide-to-oxide bonding
|
US11881443B2
(en)
|
2012-04-09 |
2024-01-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11410912B2
(en)
|
2012-04-09 |
2022-08-09 |
Monolithic 3D Inc. |
3D semiconductor device with vias and isolation layers
|
US11694944B1
(en)
|
2012-04-09 |
2023-07-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US8557632B1
(en)
|
2012-04-09 |
2013-10-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US11476181B1
(en)
|
2012-04-09 |
2022-10-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
CN104507853B
(zh)
|
2012-07-31 |
2016-11-23 |
索泰克公司 |
形成半导体设备的方法
|
US8574929B1
(en)
|
2012-11-16 |
2013-11-05 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US8686428B1
(en)
|
2012-11-16 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11018116B2
(en)
|
2012-12-22 |
2021-05-25 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US12051674B2
(en)
|
2012-12-22 |
2024-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11967583B2
(en)
|
2012-12-22 |
2024-04-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11309292B2
(en)
|
2012-12-22 |
2022-04-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8674470B1
(en)
|
2012-12-22 |
2014-03-18 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11063024B1
(en)
|
2012-12-22 |
2021-07-13 |
Monlithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11961827B1
(en)
|
2012-12-22 |
2024-04-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11217565B2
(en)
|
2012-12-22 |
2022-01-04 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11784169B2
(en)
|
2012-12-22 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11916045B2
(en)
|
2012-12-22 |
2024-02-27 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US10600657B2
(en)
|
2012-12-29 |
2020-03-24 |
Monolithic 3D Inc |
3D semiconductor device and structure
|
US11430668B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11087995B1
(en)
|
2012-12-29 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10115663B2
(en)
|
2012-12-29 |
2018-10-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11177140B2
(en)
|
2012-12-29 |
2021-11-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11004694B1
(en)
|
2012-12-29 |
2021-05-11 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9385058B1
(en)
|
2012-12-29 |
2016-07-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10903089B1
(en)
|
2012-12-29 |
2021-01-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430667B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US10892169B2
(en)
|
2012-12-29 |
2021-01-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9871034B1
(en)
|
2012-12-29 |
2018-01-16 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10651054B2
(en)
|
2012-12-29 |
2020-05-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11935949B1
(en)
|
2013-03-11 |
2024-03-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US11869965B2
(en)
|
2013-03-11 |
2024-01-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US8902663B1
(en)
|
2013-03-11 |
2014-12-02 |
Monolithic 3D Inc. |
Method of maintaining a memory state
|
US10325651B2
(en)
|
2013-03-11 |
2019-06-18 |
Monolithic 3D Inc. |
3D semiconductor device with stacked memory
|
US10840239B2
(en)
|
2014-08-26 |
2020-11-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11088130B2
(en)
|
2014-01-28 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11923374B2
(en)
|
2013-03-12 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8994404B1
(en)
|
2013-03-12 |
2015-03-31 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11398569B2
(en)
|
2013-03-12 |
2022-07-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9117749B1
(en)
|
2013-03-15 |
2015-08-25 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10224279B2
(en)
|
2013-03-15 |
2019-03-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11574109B1
(en)
|
2013-04-15 |
2023-02-07 |
Monolithic 3D Inc |
Automation methods for 3D integrated circuits and devices
|
US11341309B1
(en)
|
2013-04-15 |
2022-05-24 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11030371B2
(en)
|
2013-04-15 |
2021-06-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US9021414B1
(en)
|
2013-04-15 |
2015-04-28 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11720736B2
(en)
|
2013-04-15 |
2023-08-08 |
Monolithic 3D Inc. |
Automation methods for 3D integrated circuits and devices
|
US11487928B2
(en)
|
2013-04-15 |
2022-11-01 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11270055B1
(en)
|
2013-04-15 |
2022-03-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11107808B1
(en)
|
2014-01-28 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11031394B1
(en)
|
2014-01-28 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10297586B2
(en)
|
2015-03-09 |
2019-05-21 |
Monolithic 3D Inc. |
Methods for processing a 3D semiconductor device
|
US11011507B1
(en)
|
2015-04-19 |
2021-05-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10825779B2
(en)
|
2015-04-19 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11056468B1
(en)
|
2015-04-19 |
2021-07-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10381328B2
(en)
|
2015-04-19 |
2019-08-13 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
FR3036200B1
(fr)
*
|
2015-05-13 |
2017-05-05 |
Soitec Silicon On Insulator |
Methode de calibration pour equipements de traitement thermique
|
US11956952B2
(en)
|
2015-08-23 |
2024-04-09 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US11978731B2
(en)
|
2015-09-21 |
2024-05-07 |
Monolithic 3D Inc. |
Method to produce a multi-level semiconductor memory device and structure
|
US10515981B2
(en)
|
2015-09-21 |
2019-12-24 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with memory
|
US11937422B2
(en)
|
2015-11-07 |
2024-03-19 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US11114427B2
(en)
|
2015-11-07 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor processor and memory device and structure
|
US10522225B1
(en)
|
2015-10-02 |
2019-12-31 |
Monolithic 3D Inc. |
Semiconductor device with non-volatile memory
|
US11296115B1
(en)
|
2015-10-24 |
2022-04-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US12016181B2
(en)
|
2015-10-24 |
2024-06-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US11991884B1
(en)
|
2015-10-24 |
2024-05-21 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US10847540B2
(en)
|
2015-10-24 |
2020-11-24 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11114464B2
(en)
|
2015-10-24 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US12035531B2
(en)
|
2015-10-24 |
2024-07-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US10418369B2
(en)
|
2015-10-24 |
2019-09-17 |
Monolithic 3D Inc. |
Multi-level semiconductor memory device and structure
|
US11251149B2
(en)
|
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|
US11930648B1
(en)
|
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3D memory devices and structures with metal layers
|
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(en)
|
2016-10-10 |
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3D DRAM memory devices and structures with control circuits
|
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(en)
|
2016-10-10 |
2022-05-10 |
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3D memory devices and structures with thinned single crystal substrates
|
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(en)
|
2016-10-10 |
2024-01-09 |
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3D memory devices and structures with control circuits
|
US11711928B2
(en)
|
2016-10-10 |
2023-07-25 |
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3D memory devices and structures with control circuits
|
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(en)
|
2019-04-08 |
2021-05-25 |
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3D memory semiconductor devices and structures
|
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(en)
|
2019-04-08 |
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Monolithic 3D Inc. |
3D memory semiconductor devices and structures with bit-line pillars
|
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(en)
|
2019-04-08 |
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3D memory semiconductor devices and structures
|
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(en)
|
2019-04-08 |
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Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11296106B2
(en)
|
2019-04-08 |
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3D memory semiconductor devices and structures
|