SG45405A1 - Gas feeding device and deposition film forming apparatus employing the same - Google Patents
Gas feeding device and deposition film forming apparatus employing the sameInfo
- Publication number
- SG45405A1 SG45405A1 SG1996006330A SG1996006330A SG45405A1 SG 45405 A1 SG45405 A1 SG 45405A1 SG 1996006330 A SG1996006330 A SG 1996006330A SG 1996006330 A SG1996006330 A SG 1996006330A SG 45405 A1 SG45405 A1 SG 45405A1
- Authority
- SG
- Singapore
- Prior art keywords
- gas
- feeding device
- forming apparatus
- same
- film forming
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
- Air Bags (AREA)
- Manufacturing And Processing Devices For Dough (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1250025A JPH03112892A (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
JP1250026A JP2773918B2 (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
JP1250027A JP2776913B2 (ja) | 1989-09-26 | 1989-09-26 | ガス供給装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG45405A1 true SG45405A1 (en) | 1998-01-16 |
Family
ID=27333893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996006330A SG45405A1 (en) | 1989-09-26 | 1990-09-25 | Gas feeding device and deposition film forming apparatus employing the same |
Country Status (8)
Country | Link |
---|---|
US (3) | US5476547A (pt) |
EP (1) | EP0420596B1 (pt) |
KR (1) | KR940005276B1 (pt) |
AT (1) | ATE139580T1 (pt) |
DE (1) | DE69027496T2 (pt) |
MY (1) | MY107421A (pt) |
PT (1) | PT95432B (pt) |
SG (1) | SG45405A1 (pt) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
EP0420596B1 (en) * | 1989-09-26 | 1996-06-19 | Canon Kabushiki Kaisha | Gas feeding device and deposition film forming apparatus employing the same |
DE69218152T2 (de) * | 1991-12-26 | 1997-08-28 | Canon Kk | Herstellungsverfahren einer niedergeschlagenen Schicht mittels CVD, unter Verwendung von flüssigem Rohstoff und dazu geeignete Vorrichtung |
JP3222518B2 (ja) * | 1991-12-26 | 2001-10-29 | キヤノン株式会社 | 液体原料気化装置および薄膜形成装置 |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
JPH06196419A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 化学気相堆積装置及びそれによる半導体装置の製造方法 |
JP3103596B2 (ja) * | 1993-03-18 | 2000-10-30 | アドバンスド.テクノロジー.マテリアルズ.インコーポレイテッド | 蒸気形態の試薬をcvd反応器に供給するための装置および方法 |
WO1997009081A1 (en) * | 1995-09-01 | 1997-03-13 | Encapsulation Technology, Llc | Method and apparatus for encapsulating particulates |
US5674574A (en) * | 1996-05-20 | 1997-10-07 | Micron Technology, Inc. | Vapor delivery system for solid precursors and method regarding same |
US6244575B1 (en) | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
US6280793B1 (en) | 1996-11-20 | 2001-08-28 | Micron Technology, Inc. | Electrostatic method and apparatus for vaporizing precursors and system for using same |
US6074487A (en) * | 1997-02-13 | 2000-06-13 | Shimadzu Corporation | Unit for vaporizing liquid materials |
US5820678A (en) * | 1997-05-30 | 1998-10-13 | The Regents Of The University Of California | Solid source MOCVD system |
TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
JPH11312649A (ja) * | 1998-04-30 | 1999-11-09 | Nippon Asm Kk | Cvd装置 |
US6271131B1 (en) | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
US6239028B1 (en) * | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
GB9929279D0 (en) * | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
EP1329540A3 (en) * | 2000-07-03 | 2003-11-05 | Epichem Limited | An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites |
US6660631B1 (en) * | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
US6613656B2 (en) * | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
US6561498B2 (en) * | 2001-04-09 | 2003-05-13 | Lorex Industries, Inc. | Bubbler for use in vapor generation systems |
JP4104300B2 (ja) * | 2001-06-25 | 2008-06-18 | 三洋電機株式会社 | 複数機器制御システム |
US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US6797337B2 (en) * | 2002-08-19 | 2004-09-28 | Micron Technology, Inc. | Method for delivering precursors |
US6868869B2 (en) * | 2003-02-19 | 2005-03-22 | Advanced Technology Materials, Inc. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
JP4689969B2 (ja) * | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Iva族およびvia族化合物の調製 |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
US20040237889A1 (en) * | 2003-05-28 | 2004-12-02 | Winbond Electronics Corporation | Chemical gas deposition process and dry etching process and apparatus of same |
US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US20050051087A1 (en) * | 2003-09-08 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd., | Primer tank with nozzle assembly |
DE10345824A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
JP5383038B2 (ja) * | 2004-05-20 | 2014-01-08 | アクゾ ノーベル ナムローゼ フェンノートシャップ | 固形化合物の蒸気を一定供給するためのバブラー |
JP4845385B2 (ja) * | 2004-08-13 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜装置 |
US7722720B2 (en) * | 2004-12-08 | 2010-05-25 | Rohm And Haas Electronic Materials Llc | Delivery device |
WO2006101767A2 (en) * | 2005-03-16 | 2006-09-28 | Advanced Technology Materials, Inc. | System for delivery of reagents from solid sources thereof |
GB2432371B (en) | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
US8603250B2 (en) * | 2006-06-27 | 2013-12-10 | First Solar, Inc. | System and method for deposition of a material on a substrate |
US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US8708320B2 (en) | 2006-12-15 | 2014-04-29 | Air Products And Chemicals, Inc. | Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel |
TWI398541B (zh) | 2007-06-05 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 有機金屬化合物 |
US8142847B2 (en) | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
US7659414B2 (en) | 2007-07-20 | 2010-02-09 | Rohm And Haas Company | Method of preparing organometallic compounds |
JP5104151B2 (ja) * | 2007-09-18 | 2012-12-19 | 東京エレクトロン株式会社 | 気化装置、成膜装置、成膜方法及び記憶媒体 |
US8296993B2 (en) * | 2007-11-16 | 2012-10-30 | Monster Mosquito Systems, Llc | Ultrasonic humidifier for repelling insects |
US7712249B1 (en) * | 2007-11-16 | 2010-05-11 | Monster Mosquito Systems, Llc | Ultrasonic humidifier for repelling insects |
TW201040306A (en) * | 2009-03-11 | 2010-11-16 | Air Liquide | Bubbling supply system for stable precursor supply |
US8162296B2 (en) | 2009-03-19 | 2012-04-24 | Air Products And Chemicals, Inc. | Splashguard for high flow vacuum bubbler vessel |
US8944420B2 (en) | 2009-03-19 | 2015-02-03 | Air Products And Chemicals, Inc. | Splashguard for high flow vacuum bubbler vessel |
JP5690498B2 (ja) | 2009-03-27 | 2015-03-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 |
EP2339048B1 (en) | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Method for depositing organometallic compounds |
WO2011053505A1 (en) | 2009-11-02 | 2011-05-05 | Sigma-Aldrich Co. | Evaporator |
KR20230080495A (ko) | 2012-05-31 | 2023-06-07 | 엔테그리스, 아이엔씨. | 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송 |
DE102013209673B3 (de) * | 2013-05-24 | 2014-05-22 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren und Verdampfer zur Herstellung von synthetischem Quarzglas |
US9957612B2 (en) | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
KR101878465B1 (ko) * | 2016-07-12 | 2018-07-13 | 기초과학연구원 | 단결정 금속포일, 및 이의 제조방법 |
CN113166936A (zh) * | 2018-12-11 | 2021-07-23 | 应用材料公司 | 安瓿飞溅缓解 |
EP4257250A1 (en) * | 2022-04-06 | 2023-10-11 | Molecular Plasma Group S.A. | Improved atomizer for plasma coating apparatus |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE283874C (pt) * | ||||
US3016233A (en) * | 1959-11-06 | 1962-01-09 | Van D Olmstead | Ultrasonic fuel and air mixer |
NL299691A (pt) * | 1962-10-26 | |||
FR2110622A5 (pt) * | 1970-10-23 | 1972-06-02 | Commissariat Energie Atomique | |
US4076617A (en) * | 1971-04-22 | 1978-02-28 | Tii Corporation | Sonic cavitation and ozonation of waste material |
US3967549A (en) * | 1973-05-11 | 1976-07-06 | Electroprint, Inc. | Ink supply system for an ink mist printer |
US4011157A (en) * | 1976-01-30 | 1977-03-08 | International Business Machines Corporation | Ultrasonic removal of solid impurities from recirculating ink |
US4134514A (en) * | 1976-12-02 | 1979-01-16 | J C Schumacher Co. | Liquid source material container and method of use for semiconductor device manufacturing |
US4529427A (en) * | 1977-05-19 | 1985-07-16 | At&T Bell Laboratories | Method for making low-loss optical waveguides on an industrial scale |
JPS5535855A (en) * | 1978-09-04 | 1980-03-13 | Matsushita Electric Ind Co Ltd | Liquid fuel combusting apparatus |
EP0058571A1 (en) * | 1981-02-18 | 1982-08-25 | National Research Development Corporation | Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process |
US4436674A (en) * | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4506815A (en) * | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
US4517220A (en) * | 1983-08-15 | 1985-05-14 | Motorola, Inc. | Deposition and diffusion source control means and method |
US4842893A (en) * | 1983-12-19 | 1989-06-27 | Spectrum Control, Inc. | High speed process for coating substrates |
JPS60131968A (ja) * | 1983-12-19 | 1985-07-13 | Nec Corp | 気相成長装置 |
JPS60131973A (ja) * | 1983-12-19 | 1985-07-13 | Matsushita Electric Ind Co Ltd | 有機金属の気化方法 |
US5097800A (en) * | 1983-12-19 | 1992-03-24 | Spectrum Control, Inc. | High speed apparatus for forming capacitors |
JPS60154627A (ja) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 半導体装置の製造装置 |
AU563417B2 (en) * | 1984-02-07 | 1987-07-09 | Nippon Telegraph & Telephone Public Corporation | Optical fibre manufacture |
JPS6124227A (ja) * | 1984-07-13 | 1986-02-01 | Toshiba Corp | 気相成長装置 |
JPS61187229A (ja) * | 1985-02-14 | 1986-08-20 | Sumitomo Electric Ind Ltd | 気相成長による半導体製造装置 |
US4919304A (en) * | 1985-08-01 | 1990-04-24 | American Cyanamid Company | Bubbler cylinder device |
JPS6233769A (ja) * | 1985-08-02 | 1987-02-13 | Sumitomo Electric Ind Ltd | 液体原料のバブリング装置 |
JPS6283400A (ja) * | 1985-10-02 | 1987-04-16 | Toyo Sutoufuaa Chem:Kk | 有機金属気相成長用シリンダ−の改良法 |
JPS62207870A (ja) * | 1986-03-10 | 1987-09-12 | Mitsubishi Electric Corp | 化学気相成長装置 |
JPS62229822A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 砒化ガリウム層の気相成長方法 |
JPS62273714A (ja) * | 1986-05-21 | 1987-11-27 | Clarion Co Ltd | 有機金属ガス供給方法および装置 |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US4954371A (en) * | 1986-06-23 | 1990-09-04 | Spectrum Control, Inc. | Flash evaporation of monomer fluids |
WO1987007848A1 (en) * | 1986-06-23 | 1987-12-30 | Spectrum Control, Inc. | Flash evaporation of monomer fluids |
JPH0791649B2 (ja) * | 1986-07-11 | 1995-10-04 | 日本鋼管株式会社 | 化学気相蒸着処理設備における処理用ガス供給装置 |
JP2559030B2 (ja) * | 1986-07-25 | 1996-11-27 | 日本電信電話株式会社 | 金属薄膜の製造方法 |
JPH069191B2 (ja) * | 1986-10-24 | 1994-02-02 | 住友電気工業株式会社 | 気相成長法による半導体製造装置 |
DE3705482A1 (de) * | 1987-02-20 | 1988-09-01 | Hoechst Ag | Verfahren und anordnung zur oberflaechenvorbehandlung von kunststoff mittels einer elektrischen koronaentladung |
JPS63210001A (ja) * | 1987-02-26 | 1988-08-31 | Mitsubishi Kasei Corp | 球状圧電性セラミツクス粒子の製造法 |
DE3708967A1 (de) * | 1987-03-19 | 1988-10-06 | Merck Patent Gmbh | Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren |
JPS63314826A (ja) * | 1987-06-17 | 1988-12-22 | Sanyo Electric Co Ltd | 気相成長装置 |
US5034372A (en) * | 1987-12-07 | 1991-07-23 | Mitsubishi Denki Kabushiki Kaisha | Plasma based method for production of superconductive oxide layers |
GB2213837B (en) * | 1987-12-22 | 1992-03-11 | Philips Electronic Associated | Electronic device manufacture with deposition of material |
GB8802942D0 (en) * | 1988-02-09 | 1988-03-09 | Aron Vecht & Co Ltd | Methods & apparatus for depositing thin films |
JPH01252776A (ja) * | 1988-03-31 | 1989-10-09 | Sony Corp | 気相成長アルミニウム膜形成方法 |
DE3827628A1 (de) * | 1988-08-16 | 1990-03-15 | Hoechst Ag | Verfahren und vorrichtung zur oberflaechenvorbehandlung eines formkoerpers aus kunststoff mittels einer elektrischen koronaentladung |
US4911101A (en) * | 1988-07-20 | 1990-03-27 | General Electric Company | Metal organic molecular beam epitaxy (MOMBE) apparatus |
DE3827629A1 (de) * | 1988-08-16 | 1990-03-15 | Hoechst Ag | Verfahren und vorrichtung zur oberflaechenvorbehandlung von ein- oder mehrschichtigem formmaterial mittels einer elektrischen koronaentladung |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
US4904419A (en) * | 1989-03-14 | 1990-02-27 | Reynolds Warren D | Process and apparatus for vapor transfer of very high purity liquids at high dilution |
EP0420596B1 (en) * | 1989-09-26 | 1996-06-19 | Canon Kabushiki Kaisha | Gas feeding device and deposition film forming apparatus employing the same |
JPH03122117A (ja) * | 1989-10-05 | 1991-05-24 | Mitsubishi Rayon Co Ltd | 防振材用樹脂 |
JPH0439922A (ja) * | 1990-06-05 | 1992-02-10 | Fujitsu Ltd | 気相成長用蒸発器 |
-
1990
- 1990-09-25 EP EP90310507A patent/EP0420596B1/en not_active Expired - Lifetime
- 1990-09-25 SG SG1996006330A patent/SG45405A1/en unknown
- 1990-09-25 DE DE69027496T patent/DE69027496T2/de not_active Expired - Fee Related
- 1990-09-25 AT AT90310507T patent/ATE139580T1/de not_active IP Right Cessation
- 1990-09-26 KR KR1019900015298A patent/KR940005276B1/ko not_active IP Right Cessation
- 1990-09-26 MY MYPI90001661A patent/MY107421A/en unknown
- 1990-09-26 PT PT95432A patent/PT95432B/pt not_active IP Right Cessation
-
1994
- 1994-04-21 US US08/232,431 patent/US5476547A/en not_active Expired - Lifetime
-
1995
- 1995-05-11 US US08/439,516 patent/US5779804A/en not_active Expired - Lifetime
- 1995-05-11 US US08/439,459 patent/US5755885A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5779804A (en) | 1998-07-14 |
PT95432A (pt) | 1994-01-31 |
DE69027496T2 (de) | 1996-10-31 |
KR940005276B1 (ko) | 1994-06-15 |
EP0420596A1 (en) | 1991-04-03 |
KR910007072A (ko) | 1991-04-30 |
MY107421A (en) | 1995-12-30 |
US5755885A (en) | 1998-05-26 |
DE69027496D1 (de) | 1996-07-25 |
EP0420596B1 (en) | 1996-06-19 |
PT95432B (pt) | 1998-06-30 |
ATE139580T1 (de) | 1996-07-15 |
US5476547A (en) | 1995-12-19 |
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